JP2010109375A5 - - Google Patents

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Publication number
JP2010109375A5
JP2010109375A5 JP2009276412A JP2009276412A JP2010109375A5 JP 2010109375 A5 JP2010109375 A5 JP 2010109375A5 JP 2009276412 A JP2009276412 A JP 2009276412A JP 2009276412 A JP2009276412 A JP 2009276412A JP 2010109375 A5 JP2010109375 A5 JP 2010109375A5
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JP
Japan
Prior art keywords
substrate
radiation beam
laser annealing
preheating
incident
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Application number
JP2009276412A
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English (en)
Japanese (ja)
Other versions
JP5094825B2 (ja
JP2010109375A (ja
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Publication date
Priority claimed from US10/762,861 external-priority patent/US7098155B2/en
Application filed filed Critical
Publication of JP2010109375A publication Critical patent/JP2010109375A/ja
Publication of JP2010109375A5 publication Critical patent/JP2010109375A5/ja
Application granted granted Critical
Publication of JP5094825B2 publication Critical patent/JP5094825B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2009276412A 2004-01-22 2009-12-04 低濃度ドープされたシリコン基板のレーザ熱アニール Expired - Fee Related JP5094825B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/762,861 2004-01-22
US10/762,861 US7098155B2 (en) 2003-09-29 2004-01-22 Laser thermal annealing of lightly doped silicon substrates

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2005013255A Division JP4843225B2 (ja) 2004-01-22 2005-01-20 低濃度ドープされたシリコン基板のレーザ熱アニール

Publications (3)

Publication Number Publication Date
JP2010109375A JP2010109375A (ja) 2010-05-13
JP2010109375A5 true JP2010109375A5 (enExample) 2012-03-29
JP5094825B2 JP5094825B2 (ja) 2012-12-12

Family

ID=34911265

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2005013255A Expired - Fee Related JP4843225B2 (ja) 2004-01-22 2005-01-20 低濃度ドープされたシリコン基板のレーザ熱アニール
JP2009276412A Expired - Fee Related JP5094825B2 (ja) 2004-01-22 2009-12-04 低濃度ドープされたシリコン基板のレーザ熱アニール

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2005013255A Expired - Fee Related JP4843225B2 (ja) 2004-01-22 2005-01-20 低濃度ドープされたシリコン基板のレーザ熱アニール

Country Status (3)

Country Link
JP (2) JP4843225B2 (enExample)
KR (1) KR100699211B1 (enExample)
TW (1) TWI297521B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5073260B2 (ja) * 2006-09-29 2012-11-14 日立コンピュータ機器株式会社 レーザアニール装置及びレーザアニール方法
US20080206897A1 (en) * 2007-02-27 2008-08-28 Woo Sik Yoo Selective Depth Optical Processing
US20090114630A1 (en) * 2007-11-05 2009-05-07 Hawryluk Andrew M Minimization of surface reflectivity variations
US20100068898A1 (en) 2008-09-17 2010-03-18 Stephen Moffatt Managing thermal budget in annealing of substrates
EP2342739A4 (en) 2008-09-17 2013-05-22 Applied Materials Inc MANAGEMENT OF THE HEAT BUDGET ON LIGHTING OF SUBSTRATES
US20100084744A1 (en) * 2008-10-06 2010-04-08 Zafiropoulo Arthur W Thermal processing of substrates with pre- and post-spike temperature control
JP5541693B2 (ja) * 2010-03-25 2014-07-09 株式会社日本製鋼所 レーザアニール装置
JP5614768B2 (ja) * 2010-03-25 2014-10-29 株式会社日本製鋼所 レーザ処理装置およびレーザ処理方法
US8014427B1 (en) 2010-05-11 2011-09-06 Ultratech, Inc. Line imaging systems and methods for laser annealing
JP5617421B2 (ja) * 2010-08-06 2014-11-05 Ｊｆｅスチール株式会社 電子ビーム照射装置
US8026519B1 (en) * 2010-10-22 2011-09-27 Ultratech, Inc. Systems and methods for forming a time-averaged line image
JP5786557B2 (ja) * 2011-08-25 2015-09-30 株式会社Sumco シミュレーションによるレーザースパイクアニールを施す際に生じる酸素析出物からの発生転位予測方法
US8546805B2 (en) * 2012-01-27 2013-10-01 Ultratech, Inc. Two-beam laser annealing with improved temperature performance
SG195515A1 (en) * 2012-06-11 2013-12-30 Ultratech Inc Laser annealing systems and methods with ultra-short dwell times
US9823121B2 (en) * 2014-10-14 2017-11-21 Kla-Tencor Corporation Method and system for measuring radiation and temperature exposure of wafers along a fabrication process line
JP6452564B2 (ja) * 2015-07-15 2019-01-16 住友重機械工業株式会社 レーザアニール装置及びレーザアニール方法
SG10201605683WA (en) 2015-07-22 2017-02-27 Ultratech Inc High-efficiency line-forming optical systems and methods using a serrated spatial filter
US10256005B2 (en) * 2015-07-29 2019-04-09 Applied Materials, Inc. Rotating substrate laser anneal
KR102772310B1 (ko) * 2019-09-09 2025-02-26 삼성디스플레이 주식회사 레이저 열처리 장치 및 레이저 빔 모니터링 시스템
WO2023282587A1 (ko) * 2021-07-06 2023-01-12 에이피에스리서치 주식회사 레이저 열처리장치 및 레이저 열처리방법
KR102753522B1 (ko) * 2021-12-02 2025-01-14 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

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