JP2010109375A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2010109375A5 JP2010109375A5 JP2009276412A JP2009276412A JP2010109375A5 JP 2010109375 A5 JP2010109375 A5 JP 2010109375A5 JP 2009276412 A JP2009276412 A JP 2009276412A JP 2009276412 A JP2009276412 A JP 2009276412A JP 2010109375 A5 JP2010109375 A5 JP 2010109375A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- radiation beam
- laser annealing
- preheating
- incident
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 23
- 238000005224 laser annealing Methods 0.000 claims 9
- 230000000875 corresponding Effects 0.000 claims 5
- 238000010521 absorption reaction Methods 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 125000004429 atoms Chemical group 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Claims (3)
室温で前記基板に実質的に吸収され、かつ、前記レーザアニール放射線ビームの波長より短い波長を有する第１及び第２の予熱放射線ビームを該基板の第１の部分に照射して前記基板上に第１の走査像を形成すること、及び、
前記第１の走査像を前記基板の上方で走査して、前記基板の対応部分を予熱すること、を含み、
前記基板の対応部分は、続いて第２の走査像の前方に存在するか又は前記第２の走査像と部分的に重なり、
前記第２の走査像は、前記レーザアニール放射線ビームによって前記基板の予熱された部分に形成され、
前記予熱放射線ビーム及び前記レーザアニール放射線ビームが、前記レーザアニール放射線ビームが前記基板に実質的に吸収され始める前記基板の臨界温度以上に予熱される前記基板の対応部分を有する前記基板の表面に関して走査され、
前記第１及び第２の予熱放射線ビームは、前記基板の対応部分を前記臨界温度以上に予熱し、
前記レーザアニール放射線ビームは、前記第１及び第２の予熱放射線ビームによって前記臨界温度以上に予熱された前記基板の対応部分に関して走査され、
前記第１及び第２の予熱放射線ビームはそれぞれ、前記基板の表面の同じ部分に照射され、ｐ偏光されており、前記レーザアニール放射線ビームの波長よりも短い波長を有し、かつ、前記基板に対して、前記基板表面の構造による熱吸収のばらつきを最小化する角度で入射し、
前記基板は、１×１０ １６ 原子／ｃｍ ３ 以下のドーパント濃度を有し、
前記レーザアニール放射線ビームは、ＣＯ ２ レーザ放射線ビームである、方法。 A method of preheating the substrate to perform laser thermal annealing of the substrate using a laser annealing radiation beam that is not substantially absorbed at room temperature into a silicon substrate having a surface comprising:
First and second preheating radiation beams that are substantially absorbed by the substrate at room temperature and have a wavelength shorter than the wavelength of the laser annealing radiation beam are applied to the first portion of the substrate onto the substrate. Forming a first scanned image; and
Scanning the first scanned image above the substrate to preheat corresponding portions of the substrate;
A corresponding portion of the substrate subsequently exists in front of or partially overlaps the second scanned image;
The second scanned image is formed on a preheated portion of the substrate by the laser annealing radiation beam;
The preheating radiation beam and the laser annealing radiation beam are scanned with respect to the surface of the substrate having a corresponding portion of the substrate that is preheated above a critical temperature of the substrate where the laser annealing radiation beam begins to be substantially absorbed by the substrate. And
The first and second preheating radiation beams preheat corresponding portions of the substrate above the critical temperature;
The laser annealing radiation beam is scanned with respect to a corresponding portion of the substrate preheated above the critical temperature by the first and second preheating radiation beams;
Each of the first and second preheating radiation beams is applied to the same portion of the surface of the substrate, is p-polarized, has a wavelength shorter than the wavelength of the laser annealing radiation beam, and is applied to the substrate On the other hand, it is incident at an angle that minimizes variations in heat absorption due to the structure of the substrate surface,
The substrate has a dopant concentration of 1 × 10 16 atoms / cm 3 or less;
The laser annealing radiation beam is a CO 2 laser radiation beam, the method.
前記レーザアニール放射線ビームは、ブルースター角とその近傍で前記基板に入射し、
前記第１および第２の予熱放射線ビームは、中央角度を含む角度範囲を超えて前記基板に入射し、
各角度範囲に対する前記中央角度は、ブルースター角と異なる、方法。 In claim 1,
The laser annealing radiation beam is incident on the substrate at and near the Brewster angle,
The first and second preheating radiation beams are incident on the substrate beyond an angular range including a central angle;
The method wherein the central angle for each angular range is different from the Brewster angle.
前記第１及び第２の予熱放射線ビームがそれぞれ、
ｉ）０．１５〜０．５の前記基板における開口数と、
ｉｉ）約５２°の入射角と、
を有するように形成することを含む、方法。 In claim 1,
The first and second preheating radiation beams are respectively
i) a numerical aperture in the substrate of 0.15 to 0.5;
ii) an incident angle of about 52 °;
Forming the method.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/762,861 | 2004-01-22 | ||
| US10/762,861 US7098155B2 (en) | 2003-09-29 | 2004-01-22 | Laser thermal annealing of lightly doped silicon substrates |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005013255A Division JP4843225B2 (en) | 2004-01-22 | 2005-01-20 | Laser thermal annealing of lightly doped silicon substrates. |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010109375A JP2010109375A (en) | 2010-05-13 |
| JP2010109375A5 true JP2010109375A5 (en) | 2012-03-29 |
| JP5094825B2 JP5094825B2 (en) | 2012-12-12 |
Family
ID=34911265
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005013255A Expired - Fee Related JP4843225B2 (en) | 2004-01-22 | 2005-01-20 | Laser thermal annealing of lightly doped silicon substrates. |
| JP2009276412A Expired - Fee Related JP5094825B2 (en) | 2004-01-22 | 2009-12-04 | Laser thermal annealing of lightly doped silicon substrates. |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005013255A Expired - Fee Related JP4843225B2 (en) | 2004-01-22 | 2005-01-20 | Laser thermal annealing of lightly doped silicon substrates. |
Country Status (3)
| Country | Link |
|---|---|
| JP (2) | JP4843225B2 (en) |
| KR (1) | KR100699211B1 (en) |
| TW (1) | TWI297521B (en) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5073260B2 (en) * | 2006-09-29 | 2012-11-14 | 日立コンピュータ機器株式会社 | Laser annealing apparatus and laser annealing method |
| US20080206897A1 (en) * | 2007-02-27 | 2008-08-28 | Woo Sik Yoo | Selective Depth Optical Processing |
| US20090114630A1 (en) * | 2007-11-05 | 2009-05-07 | Hawryluk Andrew M | Minimization of surface reflectivity variations |
| US20100068898A1 (en) | 2008-09-17 | 2010-03-18 | Stephen Moffatt | Managing thermal budget in annealing of substrates |
| SG193882A1 (en) * | 2008-09-17 | 2013-10-30 | Applied Materials Inc | Managing thermal budget in annealing of substrates |
| US20100084744A1 (en) * | 2008-10-06 | 2010-04-08 | Zafiropoulo Arthur W | Thermal processing of substrates with pre- and post-spike temperature control |
| JP5614768B2 (en) * | 2010-03-25 | 2014-10-29 | 株式会社日本製鋼所 | Laser processing apparatus and laser processing method |
| JP5541693B2 (en) * | 2010-03-25 | 2014-07-09 | 株式会社日本製鋼所 | Laser annealing equipment |
| US8014427B1 (en) * | 2010-05-11 | 2011-09-06 | Ultratech, Inc. | Line imaging systems and methods for laser annealing |
| JP5617421B2 (en) * | 2010-08-06 | 2014-11-05 | Ｊｆｅスチール株式会社 | Electron beam irradiation device |
| US8026519B1 (en) * | 2010-10-22 | 2011-09-27 | Ultratech, Inc. | Systems and methods for forming a time-averaged line image |
| JP5786557B2 (en) * | 2011-08-25 | 2015-09-30 | 株式会社Sumco | Prediction method of dislocations generated from oxygen precipitates generated during laser spike annealing by simulation |
| US8546805B2 (en) * | 2012-01-27 | 2013-10-01 | Ultratech, Inc. | Two-beam laser annealing with improved temperature performance |
| SG10201503478UA (en) * | 2012-06-11 | 2015-06-29 | Ultratech Inc | Laser annealing systems and methods with ultra-short dwell times |
| US9823121B2 (en) * | 2014-10-14 | 2017-11-21 | Kla-Tencor Corporation | Method and system for measuring radiation and temperature exposure of wafers along a fabrication process line |
| JP6452564B2 (en) * | 2015-07-15 | 2019-01-16 | 住友重機械工業株式会社 | Laser annealing apparatus and laser annealing method |
| SG10201605683WA (en) | 2015-07-22 | 2017-02-27 | Ultratech Inc | High-efficiency line-forming optical systems and methods using a serrated spatial filter |
| DE202016009128U1 (en) * | 2015-07-29 | 2022-07-25 | Applied Materials, Inc. | Laser annealing of a rotating substrate |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5629323A (en) * | 1979-08-17 | 1981-03-24 | Nec Corp | Two-wavelength laser surface treating apparatus |
| JPS57104217A (en) * | 1980-12-22 | 1982-06-29 | Toshiba Corp | Surface heat treatment |
| JPS57183024A (en) * | 1981-05-02 | 1982-11-11 | Fujitsu Ltd | Laser annealing |
| JPS57183023A (en) * | 1981-05-02 | 1982-11-11 | Fujitsu Ltd | Laser annealing |
| JPS57111020A (en) * | 1981-11-16 | 1982-07-10 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS60117617A (en) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH01173707A (en) * | 1987-12-28 | 1989-07-10 | Matsushita Electric Ind Co Ltd | Laser annealing method |
| JPH03266424A (en) * | 1990-03-16 | 1991-11-27 | Sony Corp | Annealing process of semiconductor substrate |
| JPH0521340A (en) * | 1991-07-10 | 1993-01-29 | Ricoh Co Ltd | Thin film semiconductor device, method and apparatus for manufacturing the same |
| JPH0883765A (en) * | 1994-07-14 | 1996-03-26 | Sanyo Electric Co Ltd | Manufacture of polycrystalline semiconductor film |
| JP2000012461A (en) * | 1998-06-17 | 2000-01-14 | Matsushita Electric Ind Co Ltd | Manufacture of crystalline semiconductor thin film |
| JP2000012484A (en) * | 1998-06-25 | 2000-01-14 | Mitsubishi Electric Corp | Laser annealing system |
| JP3185881B2 (en) * | 1998-10-28 | 2001-07-11 | 日本電気株式会社 | Laser irradiation apparatus and laser irradiation method |
| JP2001156017A (en) * | 1999-11-29 | 2001-06-08 | Semiconductor Energy Lab Co Ltd | Laser device, method for heat treating by using laser beam and method for manufacturing semiconductor device |
| US7015422B2 (en) * | 2000-12-21 | 2006-03-21 | Mattson Technology, Inc. | System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
| JP2002217125A (en) * | 2001-01-23 | 2002-08-02 | Sumitomo Heavy Ind Ltd | Surface treatment apparatus and its method |
| JP2003347237A (en) * | 2002-05-30 | 2003-12-05 | Mitsubishi Electric Corp | Method of manufacturing semiconductor device and manufacturing device thereof |
| JP2004128421A (en) * | 2002-10-07 | 2004-04-22 | Semiconductor Energy Lab Co Ltd | Laser irradiation method, laser irradiation device, and method for manufacturing semiconductor device |
-
2005
- 2005-01-19 TW TW094101533A patent/TWI297521B/en not_active IP Right Cessation
- 2005-01-20 JP JP2005013255A patent/JP4843225B2/en not_active Expired - Fee Related
- 2005-01-21 KR KR1020050005988A patent/KR100699211B1/en active IP Right Grant
-
2009
- 2009-12-04 JP JP2009276412A patent/JP5094825B2/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2010109375A5 (en) | ||
| Zhang et al. | Phase transition control for high performance Ruddlesden–Popper perovskite solar cells | |
| JP6078092B2 (en) | Laser annealing system and method with very short residence time | |
| JP2005210129A5 (en) | ||
| WO2005043696A3 (en) | Laser thermal annealing of lightly doped silicon substrates | |
| JP2009009935A5 (en) | ||
| JP2007507897A5 (en) | ||
| JP2009124117A5 (en) | ||
| WO2009126907A3 (en) | Laser-scribing platform and hybrid writing strategy | |
| CN105719958A (en) | Laser annealing systems and methods with ultra-short dwell times | |
| WO2010077018A3 (en) | Laser firing apparatus for high efficiency solar cell and fabrication method thereof | |
| CN104215611B (en) | Method for checking polysilicon layer | |
| EA028967B1 (en) | Method for heat-treating a coating | |
| JP2010274328A5 (en) | ||
| JP2009272440A (en) | Semiconductor wafer manufacturing method | |
| JP2010166035A5 (en) | ||
| JP2009295574A5 (en) | Film forming method and substrate for film formation | |
| WO2014010599A1 (en) | Laminated plate manufacturing method | |
| ES2908278T3 (en) | Method for the production of a coated printed plate | |
| TWI375498B (en) | High perfromance laser-assisted transferring system and transfer component | |
| TW201219544A (en) | Texture etching solution composition and texture etching method of crystalline silicon wafers | |
| Zhan et al. | Nacre inspired robust self-encapsulating flexible perovskite photodetector | |
| Su et al. | Broadband n+− n photodiode based on tellurium-doped black silicon fabricated by femtosecond laser filament | |
| JP2017516918A (en) | Material containing a silver functional layer crystallized on a nickel oxide layer | |
| KR20100041672A (en) | Laser crystallization method |