JPS57183023A - Laser annealing - Google Patents
Laser annealingInfo
- Publication number
- JPS57183023A JPS57183023A JP6733481A JP6733481A JPS57183023A JP S57183023 A JPS57183023 A JP S57183023A JP 6733481 A JP6733481 A JP 6733481A JP 6733481 A JP6733481 A JP 6733481A JP S57183023 A JPS57183023 A JP S57183023A
- Authority
- JP
- Japan
- Prior art keywords
- annealing
- substrate
- spot
- heating
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
Abstract
PURPOSE:To prevent an adverse influence to be generated by heat in the impurities introducing region for element formed in a substrate, etc., by a method wherein previous heating of the substrate to be performed with laser annealing is conducted by a laser beam. CONSTITUTION:The laser beam LA for annealing is reflected by a mirror M, and is condensed by a lens G1 to perform scanning on the substrate S in the X direction. The laser beam LH for previous heating is condensed by a lens G2, and irradiates the substrate S from the oblique direction. The diameter of the previously heating spot of the beam LH is larger than the diameter of the annealing spot of the beam LA, and the previously heating spot procedes the annealing spot. Accordingly although annealing is performed as the same with the case when the whole of the substrate S is previously heated, but because previous heating is performed locally, the part other than the part necessitating annealing is not heated, and all regions formed already are not affected by adverse influence.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6733481A JPS57183023A (en) | 1981-05-02 | 1981-05-02 | Laser annealing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6733481A JPS57183023A (en) | 1981-05-02 | 1981-05-02 | Laser annealing |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57183023A true JPS57183023A (en) | 1982-11-11 |
JPH0116006B2 JPH0116006B2 (en) | 1989-03-22 |
Family
ID=13342012
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6733481A Granted JPS57183023A (en) | 1981-05-02 | 1981-05-02 | Laser annealing |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57183023A (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4784723A (en) * | 1982-04-09 | 1988-11-15 | Fujitsu Limited | Method for producing a single-crystalline layer |
USRE33274E (en) * | 1985-09-13 | 1990-07-24 | Xerox Corporation | Selective disordering of well structures by laser annealing |
JPH0360015A (en) * | 1989-07-27 | 1991-03-15 | Sanyo Electric Co Ltd | Laser annealing device |
JPH04364031A (en) * | 1991-06-10 | 1992-12-16 | Ii & S:Kk | Method and apparatus for laser annealing |
JP2004289140A (en) * | 2003-03-03 | 2004-10-14 | Semiconductor Energy Lab Co Ltd | Laser irradiation device, laser irradiation method, and manufacturing method of semiconductor device |
JP2004297055A (en) * | 2003-03-07 | 2004-10-21 | Semiconductor Energy Lab Co Ltd | Method of manufacturing semiconductor device, laser irradiation method, and laser irradiation device |
JP2005210129A (en) * | 2004-01-22 | 2005-08-04 | Ultratech Inc | Laser thermal annealing of lightly-doped silicon substrates |
JP2009032952A (en) * | 2007-07-27 | 2009-02-12 | Sharp Corp | Laser irradiation apparatus, laser irradiation method, crystal material and functional element |
US7494942B2 (en) | 2003-09-29 | 2009-02-24 | Ultratech, Inc. | Laser thermal annealing of lightly doped silicon substrates |
US7674663B2 (en) | 2002-10-07 | 2010-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of irradiating laser, laser irradiation system, and manufacturing method of semiconductor device |
US7700462B2 (en) | 2003-02-28 | 2010-04-20 | Semiconductor Energy Laboratory Co., Ltd | Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device |
JP2012231158A (en) * | 2003-09-29 | 2012-11-22 | Ultratech Inc | Laser thermal annealing of lightly doped silicon substrates |
-
1981
- 1981-05-02 JP JP6733481A patent/JPS57183023A/en active Granted
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4784723A (en) * | 1982-04-09 | 1988-11-15 | Fujitsu Limited | Method for producing a single-crystalline layer |
USRE33274E (en) * | 1985-09-13 | 1990-07-24 | Xerox Corporation | Selective disordering of well structures by laser annealing |
JPH0360015A (en) * | 1989-07-27 | 1991-03-15 | Sanyo Electric Co Ltd | Laser annealing device |
JPH04364031A (en) * | 1991-06-10 | 1992-12-16 | Ii & S:Kk | Method and apparatus for laser annealing |
US7674663B2 (en) | 2002-10-07 | 2010-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of irradiating laser, laser irradiation system, and manufacturing method of semiconductor device |
US7700462B2 (en) | 2003-02-28 | 2010-04-20 | Semiconductor Energy Laboratory Co., Ltd | Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device |
JP2004289140A (en) * | 2003-03-03 | 2004-10-14 | Semiconductor Energy Lab Co Ltd | Laser irradiation device, laser irradiation method, and manufacturing method of semiconductor device |
JP2004297055A (en) * | 2003-03-07 | 2004-10-21 | Semiconductor Energy Lab Co Ltd | Method of manufacturing semiconductor device, laser irradiation method, and laser irradiation device |
US7494942B2 (en) | 2003-09-29 | 2009-02-24 | Ultratech, Inc. | Laser thermal annealing of lightly doped silicon substrates |
JP2012231158A (en) * | 2003-09-29 | 2012-11-22 | Ultratech Inc | Laser thermal annealing of lightly doped silicon substrates |
JP2005210129A (en) * | 2004-01-22 | 2005-08-04 | Ultratech Inc | Laser thermal annealing of lightly-doped silicon substrates |
JP2010109375A (en) * | 2004-01-22 | 2010-05-13 | Ultratech Inc | Laser thermal annealing of lightly doped silicon substrate |
JP2009032952A (en) * | 2007-07-27 | 2009-02-12 | Sharp Corp | Laser irradiation apparatus, laser irradiation method, crystal material and functional element |
Also Published As
Publication number | Publication date |
---|---|
JPH0116006B2 (en) | 1989-03-22 |
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