JPS57183023A - Laser annealing - Google Patents

Laser annealing

Info

Publication number
JPS57183023A
JPS57183023A JP6733481A JP6733481A JPS57183023A JP S57183023 A JPS57183023 A JP S57183023A JP 6733481 A JP6733481 A JP 6733481A JP 6733481 A JP6733481 A JP 6733481A JP S57183023 A JPS57183023 A JP S57183023A
Authority
JP
Japan
Prior art keywords
annealing
substrate
spot
heating
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6733481A
Other languages
Japanese (ja)
Other versions
JPH0116006B2 (en
Inventor
Ikuro Kobayashi
Mikio Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6733481A priority Critical patent/JPS57183023A/en
Publication of JPS57183023A publication Critical patent/JPS57183023A/en
Publication of JPH0116006B2 publication Critical patent/JPH0116006B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation

Abstract

PURPOSE:To prevent an adverse influence to be generated by heat in the impurities introducing region for element formed in a substrate, etc., by a method wherein previous heating of the substrate to be performed with laser annealing is conducted by a laser beam. CONSTITUTION:The laser beam LA for annealing is reflected by a mirror M, and is condensed by a lens G1 to perform scanning on the substrate S in the X direction. The laser beam LH for previous heating is condensed by a lens G2, and irradiates the substrate S from the oblique direction. The diameter of the previously heating spot of the beam LH is larger than the diameter of the annealing spot of the beam LA, and the previously heating spot procedes the annealing spot. Accordingly although annealing is performed as the same with the case when the whole of the substrate S is previously heated, but because previous heating is performed locally, the part other than the part necessitating annealing is not heated, and all regions formed already are not affected by adverse influence.
JP6733481A 1981-05-02 1981-05-02 Laser annealing Granted JPS57183023A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6733481A JPS57183023A (en) 1981-05-02 1981-05-02 Laser annealing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6733481A JPS57183023A (en) 1981-05-02 1981-05-02 Laser annealing

Publications (2)

Publication Number Publication Date
JPS57183023A true JPS57183023A (en) 1982-11-11
JPH0116006B2 JPH0116006B2 (en) 1989-03-22

Family

ID=13342012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6733481A Granted JPS57183023A (en) 1981-05-02 1981-05-02 Laser annealing

Country Status (1)

Country Link
JP (1) JPS57183023A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4784723A (en) * 1982-04-09 1988-11-15 Fujitsu Limited Method for producing a single-crystalline layer
USRE33274E (en) * 1985-09-13 1990-07-24 Xerox Corporation Selective disordering of well structures by laser annealing
JPH0360015A (en) * 1989-07-27 1991-03-15 Sanyo Electric Co Ltd Laser annealing device
JPH04364031A (en) * 1991-06-10 1992-12-16 Ii & S:Kk Method and apparatus for laser annealing
JP2004289140A (en) * 2003-03-03 2004-10-14 Semiconductor Energy Lab Co Ltd Laser irradiation device, laser irradiation method, and manufacturing method of semiconductor device
JP2004297055A (en) * 2003-03-07 2004-10-21 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device, laser irradiation method, and laser irradiation device
JP2005210129A (en) * 2004-01-22 2005-08-04 Ultratech Inc Laser thermal annealing of lightly-doped silicon substrates
JP2009032952A (en) * 2007-07-27 2009-02-12 Sharp Corp Laser irradiation apparatus, laser irradiation method, crystal material and functional element
US7494942B2 (en) 2003-09-29 2009-02-24 Ultratech, Inc. Laser thermal annealing of lightly doped silicon substrates
US7674663B2 (en) 2002-10-07 2010-03-09 Semiconductor Energy Laboratory Co., Ltd. Method of irradiating laser, laser irradiation system, and manufacturing method of semiconductor device
US7700462B2 (en) 2003-02-28 2010-04-20 Semiconductor Energy Laboratory Co., Ltd Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
JP2012231158A (en) * 2003-09-29 2012-11-22 Ultratech Inc Laser thermal annealing of lightly doped silicon substrates

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4784723A (en) * 1982-04-09 1988-11-15 Fujitsu Limited Method for producing a single-crystalline layer
USRE33274E (en) * 1985-09-13 1990-07-24 Xerox Corporation Selective disordering of well structures by laser annealing
JPH0360015A (en) * 1989-07-27 1991-03-15 Sanyo Electric Co Ltd Laser annealing device
JPH04364031A (en) * 1991-06-10 1992-12-16 Ii & S:Kk Method and apparatus for laser annealing
US7674663B2 (en) 2002-10-07 2010-03-09 Semiconductor Energy Laboratory Co., Ltd. Method of irradiating laser, laser irradiation system, and manufacturing method of semiconductor device
US7700462B2 (en) 2003-02-28 2010-04-20 Semiconductor Energy Laboratory Co., Ltd Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
JP2004289140A (en) * 2003-03-03 2004-10-14 Semiconductor Energy Lab Co Ltd Laser irradiation device, laser irradiation method, and manufacturing method of semiconductor device
JP2004297055A (en) * 2003-03-07 2004-10-21 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device, laser irradiation method, and laser irradiation device
US7494942B2 (en) 2003-09-29 2009-02-24 Ultratech, Inc. Laser thermal annealing of lightly doped silicon substrates
JP2012231158A (en) * 2003-09-29 2012-11-22 Ultratech Inc Laser thermal annealing of lightly doped silicon substrates
JP2005210129A (en) * 2004-01-22 2005-08-04 Ultratech Inc Laser thermal annealing of lightly-doped silicon substrates
JP2010109375A (en) * 2004-01-22 2010-05-13 Ultratech Inc Laser thermal annealing of lightly doped silicon substrate
JP2009032952A (en) * 2007-07-27 2009-02-12 Sharp Corp Laser irradiation apparatus, laser irradiation method, crystal material and functional element

Also Published As

Publication number Publication date
JPH0116006B2 (en) 1989-03-22

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