SG10201605683WA - High-efficiency line-forming optical systems and methods using a serrated spatial filter - Google Patents

High-efficiency line-forming optical systems and methods using a serrated spatial filter

Info

Publication number
SG10201605683WA
SG10201605683WA SG10201605683WA SG10201605683WA SG10201605683WA SG 10201605683W A SG10201605683W A SG 10201605683WA SG 10201605683W A SG10201605683W A SG 10201605683WA SG 10201605683W A SG10201605683W A SG 10201605683WA SG 10201605683W A SG10201605683W A SG 10201605683WA
Authority
SG
Singapore
Prior art keywords
serrated
methods
optical systems
spatial filter
forming optical
Prior art date
Application number
SG10201605683WA
Inventor
Anikitchev Serguei
Original Assignee
Ultratech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ultratech Inc filed Critical Ultratech Inc
Publication of SG10201605683WA publication Critical patent/SG10201605683WA/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/0977—Reflective elements
    • G02B27/0983—Reflective elements being curved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0927—Systems for changing the beam intensity distribution, e.g. Gaussian to top-hat
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/0988—Diaphragms, spatial filters, masks for removing or filtering a part of the beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/2232—Carbon dioxide (CO2) or monoxide [CO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Recrystallisation Techniques (AREA)
  • Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG10201605683WA 2015-07-22 2016-07-12 High-efficiency line-forming optical systems and methods using a serrated spatial filter SG10201605683WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201562195349P 2015-07-22 2015-07-22

Publications (1)

Publication Number Publication Date
SG10201605683WA true SG10201605683WA (en) 2017-02-27

Family

ID=57837860

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201605683WA SG10201605683WA (en) 2015-07-22 2016-07-12 High-efficiency line-forming optical systems and methods using a serrated spatial filter

Country Status (6)

Country Link
US (2) US10353208B2 (en)
JP (1) JP6345737B2 (en)
KR (1) KR102509137B1 (en)
CN (1) CN106373909A (en)
SG (1) SG10201605683WA (en)
TW (1) TWI604515B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201528379A (en) * 2013-12-20 2015-07-16 Applied Materials Inc Dual wavelength annealing method and apparatus
US11622440B2 (en) * 2014-05-30 2023-04-04 Hypertherm, Inc. Cooling plasma cutting system consumables and related systems and methods
US11262591B2 (en) 2018-11-09 2022-03-01 Kla Corporation System and method for pumping laser sustained plasma with an illumination source having modified pupil power distribution
KR20210094835A (en) 2020-01-22 2021-07-30 삼성전자주식회사 Method of Annealing a Reflective Photomask Using LASER
CN111624689A (en) * 2020-06-15 2020-09-04 中国科学院福建物质结构研究所 Diaphragm and preparation method thereof

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US3977772A (en) * 1974-06-21 1976-08-31 Itek Corporation Apodized optical system
JPH0727129B2 (en) 1986-11-28 1995-03-29 富士写真フイルム株式会社 Laser optical system
US4832446A (en) * 1986-11-28 1989-05-23 Fuji Photo Co., Ltd. Laser optical system
US4947413A (en) 1988-07-26 1990-08-07 At&T Bell Laboratories Resolution doubling lithography technique
US6320648B1 (en) 1998-10-12 2001-11-20 Steven R. J. Brueck Method and apparatus for improving pattern fidelity in diffraction-limited imaging
US6259055B1 (en) * 1998-10-26 2001-07-10 Lsp Technologies, Inc. Apodizers for laser peening systems
KR100549776B1 (en) 1999-07-01 2006-02-06 에이에스엠엘 네델란즈 비.브이. Apparatus and method of image enhancement through spatial filtering
JP4556302B2 (en) * 2000-07-27 2010-10-06 ソニー株式会社 Thin film transistor manufacturing system and method, polysilicon evaluation method and polysilicon inspection apparatus
US7098155B2 (en) 2003-09-29 2006-08-29 Ultratech, Inc. Laser thermal annealing of lightly doped silicon substrates
TWI297521B (en) 2004-01-22 2008-06-01 Ultratech Inc Laser thermal annealing of lightly doped silicon substrates
US7253376B2 (en) 2005-01-21 2007-08-07 Ultratech, Inc. Methods and apparatus for truncating an image formed with coherent radiation
US7539371B2 (en) 2005-04-11 2009-05-26 Capella Photonics, Inc. Optical apparatus with reduced effect of mirror edge diffraction
US7847213B1 (en) 2007-09-11 2010-12-07 Ultratech, Inc. Method and apparatus for modifying an intensity profile of a coherent photonic beam
CN101726868B (en) * 2009-12-15 2011-04-27 北京理工大学 Method and device for multiplexing and encoding orbital angular momentum states of light beams
US8014427B1 (en) * 2010-05-11 2011-09-06 Ultratech, Inc. Line imaging systems and methods for laser annealing
CN102540473B (en) 2012-01-04 2014-07-02 北京工业大学 Method for realizing Gaussian beam shaping and determining average radius of serrated aperture with random radius
SG10201503482QA (en) 2012-06-11 2015-06-29 Ultratech Inc Laser annealing systems and methods with ultra-short dwell times
CN102749801A (en) * 2012-06-29 2012-10-24 北京京东方光电科技有限公司 Mask plate
JP6193305B2 (en) * 2014-07-29 2017-09-06 ウルトラテック インク High performance line forming optical system and method
US9613815B2 (en) * 2014-11-24 2017-04-04 Ultratech, Inc. High-efficiency line-forming optical systems and methods for defect annealing and dopant activation

Also Published As

Publication number Publication date
TW201705230A (en) 2017-02-01
JP6345737B2 (en) 2018-06-20
TWI604515B (en) 2017-11-01
US10353208B2 (en) 2019-07-16
KR20170012067A (en) 2017-02-02
US20170025287A1 (en) 2017-01-26
US20190339536A1 (en) 2019-11-07
JP2017028281A (en) 2017-02-02
KR102509137B1 (en) 2023-03-10
CN106373909A (en) 2017-02-01
US11415809B2 (en) 2022-08-16

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