JPS5629323A - Two-wavelength laser surface treating apparatus - Google Patents

Two-wavelength laser surface treating apparatus

Info

Publication number
JPS5629323A
JPS5629323A JP10467079A JP10467079A JPS5629323A JP S5629323 A JPS5629323 A JP S5629323A JP 10467079 A JP10467079 A JP 10467079A JP 10467079 A JP10467079 A JP 10467079A JP S5629323 A JPS5629323 A JP S5629323A
Authority
JP
Japan
Prior art keywords
pulse
optical
optical pulse
harmonic
delay
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10467079A
Other languages
Japanese (ja)
Inventor
Kunihiko Washio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10467079A priority Critical patent/JPS5629323A/en
Publication of JPS5629323A publication Critical patent/JPS5629323A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Laser Beam Processing (AREA)

Abstract

PURPOSE:To execute treatment of multilayer and highly complicate surface by imparting a delay longer than at least pulse time of an optical pulse to the space between a fundamental optical pulse and harmonic optical pulse. CONSTITUTION:The fundamental optical pulse output of a Q-switch solid laser 1 is divided by a beam splitter BS1 to be supplied to an optical frequency harmonic multiplier 2 and an optical pulse delay variable optical system 3. The harmonic multiplier 2 converts incident pulse into harmonic pulse to produce its ouput. The delay optical system 3 delays the propagating time of the fundamental optical pulse by a value longer than the time duration of the optical pulse at least to products its output. The outputs from the harmonic multiplier 2 and the delay optical system 3 are synthesized by the beam splitter BS2, and are irradiated through a collimating optical system 4 to a material 5 to be irradiated. In this manner there can be obtained a two-wavelength laser surface treating apparatus which can treat multilayer and highly complicate surface in various surface treating capabilities.
JP10467079A 1979-08-17 1979-08-17 Two-wavelength laser surface treating apparatus Pending JPS5629323A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10467079A JPS5629323A (en) 1979-08-17 1979-08-17 Two-wavelength laser surface treating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10467079A JPS5629323A (en) 1979-08-17 1979-08-17 Two-wavelength laser surface treating apparatus

Publications (1)

Publication Number Publication Date
JPS5629323A true JPS5629323A (en) 1981-03-24

Family

ID=14386899

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10467079A Pending JPS5629323A (en) 1979-08-17 1979-08-17 Two-wavelength laser surface treating apparatus

Country Status (1)

Country Link
JP (1) JPS5629323A (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57183024A (en) * 1981-05-02 1982-11-11 Fujitsu Ltd Laser annealing
JPS58201326A (en) * 1982-05-20 1983-11-24 Matsushita Electric Ind Co Ltd Heating method by laser and heating apparatus therefor
JPH01100341U (en) * 1987-08-03 1989-07-05
JPH0360015A (en) * 1989-07-27 1991-03-15 Sanyo Electric Co Ltd Laser annealing device
JPH03281073A (en) * 1990-03-27 1991-12-11 Res Dev Corp Of Japan Fine decorating and processing method
US5841801A (en) * 1995-12-13 1998-11-24 Nec Corporation Double wavelength laser
JP2002367904A (en) * 2000-06-12 2002-12-20 Seiko Epson Corp Method of manufacturing thin film semiconductor device
JP2004297055A (en) * 2003-03-07 2004-10-21 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device, laser irradiation method, and laser irradiation device
JP2005039250A (en) * 2003-06-26 2005-02-10 Semiconductor Energy Lab Co Ltd Device and method for laser beam irradiation and method of manufacturing semiconductor device
JP2005210129A (en) * 2004-01-22 2005-08-04 Ultratech Inc Laser thermal annealing of lightly-doped silicon substrates
JP2006313858A (en) * 2005-05-09 2006-11-16 Sumitomo Electric Ind Ltd Laser source, laser oscillation method, and laser processing method
JP2007507897A (en) * 2003-09-29 2007-03-29 ウルトラテック インク Laser thermal annealing of lightly doped silicon substrates
JP2008205486A (en) * 2008-03-17 2008-09-04 Hamamatsu Photonics Kk Laser processing apparatus
JP2008272794A (en) * 2007-04-27 2008-11-13 Cyber Laser Kk Laser beam machining method and apparatus
US7494942B2 (en) 2003-09-29 2009-02-24 Ultratech, Inc. Laser thermal annealing of lightly doped silicon substrates
US7674663B2 (en) 2002-10-07 2010-03-09 Semiconductor Energy Laboratory Co., Ltd. Method of irradiating laser, laser irradiation system, and manufacturing method of semiconductor device
US7700462B2 (en) 2003-02-28 2010-04-20 Semiconductor Energy Laboratory Co., Ltd Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
WO2011148788A1 (en) * 2010-05-27 2011-12-01 株式会社ブイ・テクノロジー Laser annealing method and device

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57183024A (en) * 1981-05-02 1982-11-11 Fujitsu Ltd Laser annealing
JPS58201326A (en) * 1982-05-20 1983-11-24 Matsushita Electric Ind Co Ltd Heating method by laser and heating apparatus therefor
JPH0420254B2 (en) * 1982-05-20 1992-04-02 Matsushita Electric Ind Co Ltd
JPH01100341U (en) * 1987-08-03 1989-07-05
JPH0360015A (en) * 1989-07-27 1991-03-15 Sanyo Electric Co Ltd Laser annealing device
JPH03281073A (en) * 1990-03-27 1991-12-11 Res Dev Corp Of Japan Fine decorating and processing method
US5841801A (en) * 1995-12-13 1998-11-24 Nec Corporation Double wavelength laser
JP2002367904A (en) * 2000-06-12 2002-12-20 Seiko Epson Corp Method of manufacturing thin film semiconductor device
US7674663B2 (en) 2002-10-07 2010-03-09 Semiconductor Energy Laboratory Co., Ltd. Method of irradiating laser, laser irradiation system, and manufacturing method of semiconductor device
US7700462B2 (en) 2003-02-28 2010-04-20 Semiconductor Energy Laboratory Co., Ltd Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
JP2004297055A (en) * 2003-03-07 2004-10-21 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device, laser irradiation method, and laser irradiation device
JP2005039250A (en) * 2003-06-26 2005-02-10 Semiconductor Energy Lab Co Ltd Device and method for laser beam irradiation and method of manufacturing semiconductor device
US7494942B2 (en) 2003-09-29 2009-02-24 Ultratech, Inc. Laser thermal annealing of lightly doped silicon substrates
JP2007507897A (en) * 2003-09-29 2007-03-29 ウルトラテック インク Laser thermal annealing of lightly doped silicon substrates
JP2012231158A (en) * 2003-09-29 2012-11-22 Ultratech Inc Laser thermal annealing of lightly doped silicon substrates
JP2005210129A (en) * 2004-01-22 2005-08-04 Ultratech Inc Laser thermal annealing of lightly-doped silicon substrates
JP2006313858A (en) * 2005-05-09 2006-11-16 Sumitomo Electric Ind Ltd Laser source, laser oscillation method, and laser processing method
JP2008272794A (en) * 2007-04-27 2008-11-13 Cyber Laser Kk Laser beam machining method and apparatus
TWI413561B (en) * 2007-04-27 2013-11-01 Cyber Laser Inc Method for processing with laser and laser processing device
JP2008205486A (en) * 2008-03-17 2008-09-04 Hamamatsu Photonics Kk Laser processing apparatus
WO2011148788A1 (en) * 2010-05-27 2011-12-01 株式会社ブイ・テクノロジー Laser annealing method and device
JP2011249607A (en) * 2010-05-27 2011-12-08 V Technology Co Ltd Method and apparatus for laser annealing
CN103038862A (en) * 2010-05-27 2013-04-10 株式会社V技术 Laser annealing method and device

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