EP2342739A4 - Managing thermal budget in annealing of substrates - Google Patents
Managing thermal budget in annealing of substratesInfo
- Publication number
- EP2342739A4 EP2342739A4 EP09814993.3A EP09814993A EP2342739A4 EP 2342739 A4 EP2342739 A4 EP 2342739A4 EP 09814993 A EP09814993 A EP 09814993A EP 2342739 A4 EP2342739 A4 EP 2342739A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- annealing
- substrates
- thermal budget
- managing thermal
- managing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/212,157 US20100068898A1 (en) | 2008-09-17 | 2008-09-17 | Managing thermal budget in annealing of substrates |
US12/212,214 US8314369B2 (en) | 2008-09-17 | 2008-09-17 | Managing thermal budget in annealing of substrates |
PCT/US2009/055838 WO2010033389A1 (en) | 2008-09-17 | 2009-09-03 | Managing thermal budget in annealing of substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2342739A1 EP2342739A1 (en) | 2011-07-13 |
EP2342739A4 true EP2342739A4 (en) | 2013-05-22 |
Family
ID=42039812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP09814993.3A Withdrawn EP2342739A4 (en) | 2008-09-17 | 2009-09-03 | Managing thermal budget in annealing of substrates |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP2342739A4 (en) |
JP (1) | JP5611212B2 (en) |
KR (2) | KR101800404B1 (en) |
CN (1) | CN102160157B (en) |
SG (2) | SG10201807844VA (en) |
TW (3) | TWI549190B (en) |
WO (1) | WO2010033389A1 (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8546805B2 (en) * | 2012-01-27 | 2013-10-01 | Ultratech, Inc. | Two-beam laser annealing with improved temperature performance |
US9376731B2 (en) * | 2012-05-08 | 2016-06-28 | Applied Materials, Inc. | Magneto-thermal processing apparatus and methods |
US9239192B2 (en) | 2013-02-20 | 2016-01-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Substrate rapid thermal heating system and methods |
CN104752174A (en) * | 2013-12-30 | 2015-07-01 | 上海微电子装备有限公司 | Laser annealing device and method |
TW201610215A (en) * | 2014-03-27 | 2016-03-16 | 應用材料股份有限公司 | Cyclic spike anneal chemical exposure for low thermal budget processing |
EP3213364A4 (en) * | 2014-10-31 | 2018-05-02 | Applied Materials, Inc. | Integration of laser processing with deposition of electrochemical device layers |
EP3329510B1 (en) * | 2015-07-29 | 2022-04-13 | Applied Materials, Inc. | Rotating substrate laser anneal |
JP6887234B2 (en) * | 2016-09-21 | 2021-06-16 | 株式会社日本製鋼所 | Laser irradiation device, laser irradiation method, and manufacturing method of semiconductor device |
KR102099890B1 (en) * | 2017-05-18 | 2020-04-14 | 세메스 주식회사 | Substrate treating apparatus and substrate treating method |
KR102180311B1 (en) | 2018-07-27 | 2020-11-18 | 주식회사 코윈디에스티 | Laser annealing apparatus |
KR102061424B1 (en) * | 2018-07-27 | 2019-12-31 | 주식회사 코윈디에스티 | Low-e glass annealing apparatus |
CN112038223A (en) * | 2020-08-27 | 2020-12-04 | 上海华力集成电路制造有限公司 | Method for improving wafer surface heat distribution in double-laser annealing process |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58106836A (en) * | 1981-12-18 | 1983-06-25 | Hitachi Ltd | Laser annealing device |
EP0091806A2 (en) * | 1982-04-09 | 1983-10-19 | Fujitsu Limited | A method for producing a single crystalline semiconductor layer |
US6187616B1 (en) * | 1998-02-13 | 2001-02-13 | Seiko Epson Corporation | Method for fabricating semiconductor device and heat treatment apparatus |
US20080045040A1 (en) * | 2006-08-17 | 2008-02-21 | Toshiba America Electronic Components, Inc. | Laser Spike Anneal With Plural Light Sources |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5696835A (en) * | 1979-12-29 | 1981-08-05 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH03266424A (en) * | 1990-03-16 | 1991-11-27 | Sony Corp | Annealing process of semiconductor substrate |
US5643801A (en) * | 1992-11-06 | 1997-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method and alignment |
US6423585B1 (en) * | 1997-03-11 | 2002-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Heating treatment device, heating treatment method and fabrication method of semiconductor device |
US6771895B2 (en) * | 1999-01-06 | 2004-08-03 | Mattson Technology, Inc. | Heating device for heating semiconductor wafers in thermal processing chambers |
TW457553B (en) * | 1999-01-08 | 2001-10-01 | Sony Corp | Process for producing thin film semiconductor device and laser irradiation apparatus |
AU2001247240A1 (en) * | 2000-03-01 | 2001-09-12 | Heraeus Amersil, Inc. | Method, apparatus, and article of manufacture for determining an amount of energy needed to bring a quartz workpiece to a fusion weldable condition |
JP2003045820A (en) * | 2001-07-30 | 2003-02-14 | Semiconductor Energy Lab Co Ltd | Laser irradiation apparatus, and method, and method of manufacturing semiconductor device |
US6987240B2 (en) * | 2002-04-18 | 2006-01-17 | Applied Materials, Inc. | Thermal flux processing by scanning |
JP2004128421A (en) * | 2002-10-07 | 2004-04-22 | Semiconductor Energy Lab Co Ltd | Laser irradiation method, laser irradiation device, and method for manufacturing semiconductor device |
US7098155B2 (en) | 2003-09-29 | 2006-08-29 | Ultratech, Inc. | Laser thermal annealing of lightly doped silicon substrates |
TWI297521B (en) * | 2004-01-22 | 2008-06-01 | Ultratech Inc | Laser thermal annealing of lightly doped silicon substrates |
US7482254B2 (en) * | 2005-09-26 | 2009-01-27 | Ultratech, Inc. | Apparatus and methods for thermally processing undoped and lightly doped substrates without pre-heating |
JP2008080371A (en) * | 2006-09-27 | 2008-04-10 | Sumitomo Heavy Ind Ltd | Laser beam machining method and apparatus therefor |
-
2009
- 2009-09-03 SG SG10201807844VA patent/SG10201807844VA/en unknown
- 2009-09-03 KR KR1020117008790A patent/KR101800404B1/en active IP Right Grant
- 2009-09-03 EP EP09814993.3A patent/EP2342739A4/en not_active Withdrawn
- 2009-09-03 JP JP2011526919A patent/JP5611212B2/en not_active Expired - Fee Related
- 2009-09-03 SG SG2013069232A patent/SG193882A1/en unknown
- 2009-09-03 CN CN200980136613.5A patent/CN102160157B/en not_active Expired - Fee Related
- 2009-09-03 WO PCT/US2009/055838 patent/WO2010033389A1/en active Application Filing
- 2009-09-03 KR KR1020177033214A patent/KR101868378B1/en active IP Right Grant
- 2009-09-09 TW TW102122198A patent/TWI549190B/en not_active IP Right Cessation
- 2009-09-09 TW TW102141287A patent/TWI549191B/en not_active IP Right Cessation
- 2009-09-09 TW TW098130387A patent/TWI419234B/en not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58106836A (en) * | 1981-12-18 | 1983-06-25 | Hitachi Ltd | Laser annealing device |
EP0091806A2 (en) * | 1982-04-09 | 1983-10-19 | Fujitsu Limited | A method for producing a single crystalline semiconductor layer |
US6187616B1 (en) * | 1998-02-13 | 2001-02-13 | Seiko Epson Corporation | Method for fabricating semiconductor device and heat treatment apparatus |
US20080045040A1 (en) * | 2006-08-17 | 2008-02-21 | Toshiba America Electronic Components, Inc. | Laser Spike Anneal With Plural Light Sources |
Non-Patent Citations (1)
Title |
---|
See also references of WO2010033389A1 * |
Also Published As
Publication number | Publication date |
---|---|
WO2010033389A1 (en) | 2010-03-25 |
EP2342739A1 (en) | 2011-07-13 |
TWI419234B (en) | 2013-12-11 |
JP5611212B2 (en) | 2014-10-22 |
TW201415558A (en) | 2014-04-16 |
KR20110053387A (en) | 2011-05-20 |
KR101868378B1 (en) | 2018-06-18 |
KR20170130616A (en) | 2017-11-28 |
KR101800404B1 (en) | 2017-11-22 |
JP2012503311A (en) | 2012-02-02 |
SG193882A1 (en) | 2013-10-30 |
SG10201807844VA (en) | 2018-10-30 |
CN102160157B (en) | 2015-11-25 |
TWI549191B (en) | 2016-09-11 |
TW201342480A (en) | 2013-10-16 |
CN102160157A (en) | 2011-08-17 |
TW201013789A (en) | 2010-04-01 |
TWI549190B (en) | 2016-09-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20110415 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR |
|
AX | Request for extension of the european patent |
Extension state: AL BA RS |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: MOFFATT, STEPHEN Inventor name: MAYUR, ABHILASH, J. Inventor name: HUNTER, AARON Inventor name: RAMAMURTHY, SUNDAR Inventor name: RANISH, JOSEPH |
|
DAX | Request for extension of the european patent (deleted) | ||
A4 | Supplementary search report drawn up and despatched |
Effective date: 20130422 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 21/67 20060101ALI20130416BHEP Ipc: H01L 21/324 20060101AFI20130416BHEP |
|
17Q | First examination report despatched |
Effective date: 20160610 |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
INTG | Intention to grant announced |
Effective date: 20181120 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20190402 |