EP2342739A4 - Managing thermal budget in annealing of substrates - Google Patents
Managing thermal budget in annealing of substratesInfo
- Publication number
- EP2342739A4 EP2342739A4 EP09814993.3A EP09814993A EP2342739A4 EP 2342739 A4 EP2342739 A4 EP 2342739A4 EP 09814993 A EP09814993 A EP 09814993A EP 2342739 A4 EP2342739 A4 EP 2342739A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- annealing
- substrates
- thermal budget
- managing thermal
- managing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000137 annealing Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Furnace Details (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/212,214 US8314369B2 (en) | 2008-09-17 | 2008-09-17 | Managing thermal budget in annealing of substrates |
US12/212,157 US20100068898A1 (en) | 2008-09-17 | 2008-09-17 | Managing thermal budget in annealing of substrates |
PCT/US2009/055838 WO2010033389A1 (en) | 2008-09-17 | 2009-09-03 | Managing thermal budget in annealing of substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2342739A1 EP2342739A1 (en) | 2011-07-13 |
EP2342739A4 true EP2342739A4 (en) | 2013-05-22 |
Family
ID=42039812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP09814993.3A Withdrawn EP2342739A4 (en) | 2008-09-17 | 2009-09-03 | Managing thermal budget in annealing of substrates |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP2342739A4 (en) |
JP (1) | JP5611212B2 (en) |
KR (2) | KR101868378B1 (en) |
CN (1) | CN102160157B (en) |
SG (2) | SG10201807844VA (en) |
TW (3) | TWI549190B (en) |
WO (1) | WO2010033389A1 (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8546805B2 (en) * | 2012-01-27 | 2013-10-01 | Ultratech, Inc. | Two-beam laser annealing with improved temperature performance |
US9376731B2 (en) * | 2012-05-08 | 2016-06-28 | Applied Materials, Inc. | Magneto-thermal processing apparatus and methods |
US9239192B2 (en) * | 2013-02-20 | 2016-01-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Substrate rapid thermal heating system and methods |
CN104752174A (en) * | 2013-12-30 | 2015-07-01 | 上海微电子装备有限公司 | Laser annealing device and method |
TW201610215A (en) * | 2014-03-27 | 2016-03-16 | 應用材料股份有限公司 | Cyclic spike anneal chemical exposure for low thermal budget processing |
US20170306474A1 (en) * | 2014-10-31 | 2017-10-26 | Applied Materials, Inc. | Integration of laser processing with deposition of electrochemical device layers |
CN115527896A (en) * | 2015-07-29 | 2022-12-27 | 应用材料公司 | Laser annealing of rotating substrates |
JP6887234B2 (en) | 2016-09-21 | 2021-06-16 | 株式会社日本製鋼所 | Laser irradiation device, laser irradiation method, and manufacturing method of semiconductor device |
KR102099890B1 (en) * | 2017-05-18 | 2020-04-14 | 세메스 주식회사 | Substrate treating apparatus and substrate treating method |
KR102061424B1 (en) * | 2018-07-27 | 2019-12-31 | 주식회사 코윈디에스티 | Low-e glass annealing apparatus |
KR102180311B1 (en) | 2018-07-27 | 2020-11-18 | 주식회사 코윈디에스티 | Laser annealing apparatus |
CN112038223A (en) * | 2020-08-27 | 2020-12-04 | 上海华力集成电路制造有限公司 | Method for improving wafer surface heat distribution in double-laser annealing process |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58106836A (en) * | 1981-12-18 | 1983-06-25 | Hitachi Ltd | Laser annealing device |
EP0091806A2 (en) * | 1982-04-09 | 1983-10-19 | Fujitsu Limited | A method for producing a single crystalline semiconductor layer |
US6187616B1 (en) * | 1998-02-13 | 2001-02-13 | Seiko Epson Corporation | Method for fabricating semiconductor device and heat treatment apparatus |
US20080045040A1 (en) * | 2006-08-17 | 2008-02-21 | Toshiba America Electronic Components, Inc. | Laser Spike Anneal With Plural Light Sources |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5696835A (en) * | 1979-12-29 | 1981-08-05 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH03266424A (en) * | 1990-03-16 | 1991-11-27 | Sony Corp | Annealing process of semiconductor substrate |
US5643801A (en) * | 1992-11-06 | 1997-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method and alignment |
US6423585B1 (en) * | 1997-03-11 | 2002-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Heating treatment device, heating treatment method and fabrication method of semiconductor device |
US6771895B2 (en) * | 1999-01-06 | 2004-08-03 | Mattson Technology, Inc. | Heating device for heating semiconductor wafers in thermal processing chambers |
TW457553B (en) * | 1999-01-08 | 2001-10-01 | Sony Corp | Process for producing thin film semiconductor device and laser irradiation apparatus |
WO2001064591A1 (en) * | 2000-03-01 | 2001-09-07 | Heraeus Amersil, Inc. | Method, apparatus, and article of manufacture for determining an amount of energy needed to bring a quartz workpiece to a fusion weldable condition |
JP2003045820A (en) * | 2001-07-30 | 2003-02-14 | Semiconductor Energy Lab Co Ltd | Laser irradiation apparatus, and method, and method of manufacturing semiconductor device |
US6987240B2 (en) * | 2002-04-18 | 2006-01-17 | Applied Materials, Inc. | Thermal flux processing by scanning |
JP2004128421A (en) * | 2002-10-07 | 2004-04-22 | Semiconductor Energy Lab Co Ltd | Laser irradiation method, laser irradiation device, and method for manufacturing semiconductor device |
US7098155B2 (en) * | 2003-09-29 | 2006-08-29 | Ultratech, Inc. | Laser thermal annealing of lightly doped silicon substrates |
TWI297521B (en) | 2004-01-22 | 2008-06-01 | Ultratech Inc | Laser thermal annealing of lightly doped silicon substrates |
US7482254B2 (en) * | 2005-09-26 | 2009-01-27 | Ultratech, Inc. | Apparatus and methods for thermally processing undoped and lightly doped substrates without pre-heating |
JP2008080371A (en) * | 2006-09-27 | 2008-04-10 | Sumitomo Heavy Ind Ltd | Laser beam machining method and apparatus therefor |
-
2009
- 2009-09-03 WO PCT/US2009/055838 patent/WO2010033389A1/en active Application Filing
- 2009-09-03 KR KR1020177033214A patent/KR101868378B1/en active IP Right Grant
- 2009-09-03 JP JP2011526919A patent/JP5611212B2/en not_active Expired - Fee Related
- 2009-09-03 EP EP09814993.3A patent/EP2342739A4/en not_active Withdrawn
- 2009-09-03 SG SG10201807844VA patent/SG10201807844VA/en unknown
- 2009-09-03 SG SG2013069232A patent/SG193882A1/en unknown
- 2009-09-03 CN CN200980136613.5A patent/CN102160157B/en not_active Expired - Fee Related
- 2009-09-03 KR KR1020117008790A patent/KR101800404B1/en active IP Right Grant
- 2009-09-09 TW TW102122198A patent/TWI549190B/en not_active IP Right Cessation
- 2009-09-09 TW TW098130387A patent/TWI419234B/en not_active IP Right Cessation
- 2009-09-09 TW TW102141287A patent/TWI549191B/en not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58106836A (en) * | 1981-12-18 | 1983-06-25 | Hitachi Ltd | Laser annealing device |
EP0091806A2 (en) * | 1982-04-09 | 1983-10-19 | Fujitsu Limited | A method for producing a single crystalline semiconductor layer |
US6187616B1 (en) * | 1998-02-13 | 2001-02-13 | Seiko Epson Corporation | Method for fabricating semiconductor device and heat treatment apparatus |
US20080045040A1 (en) * | 2006-08-17 | 2008-02-21 | Toshiba America Electronic Components, Inc. | Laser Spike Anneal With Plural Light Sources |
Non-Patent Citations (1)
Title |
---|
See also references of WO2010033389A1 * |
Also Published As
Publication number | Publication date |
---|---|
WO2010033389A1 (en) | 2010-03-25 |
TW201013789A (en) | 2010-04-01 |
CN102160157B (en) | 2015-11-25 |
SG10201807844VA (en) | 2018-10-30 |
TWI549190B (en) | 2016-09-11 |
KR20170130616A (en) | 2017-11-28 |
SG193882A1 (en) | 2013-10-30 |
TW201342480A (en) | 2013-10-16 |
TWI419234B (en) | 2013-12-11 |
TW201415558A (en) | 2014-04-16 |
KR20110053387A (en) | 2011-05-20 |
KR101800404B1 (en) | 2017-11-22 |
JP2012503311A (en) | 2012-02-02 |
KR101868378B1 (en) | 2018-06-18 |
TWI549191B (en) | 2016-09-11 |
EP2342739A1 (en) | 2011-07-13 |
JP5611212B2 (en) | 2014-10-22 |
CN102160157A (en) | 2011-08-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2342739A4 (en) | Managing thermal budget in annealing of substrates | |
IL238764A0 (en) | Pyrimidinones as p13k inhibitors | |
GB0908316D0 (en) | Thermal treatment of biomass | |
GB2460538B (en) | Temperature compensation circuit and method | |
IL211070A0 (en) | Dihydropyridophthalazinone inhibitors of poly(adp-ribose)polymerase | |
ZA201204474B (en) | Novel pyrimidine compounds as mtor and p13k inhibitors | |
EP2331934A4 (en) | Substrates and optical systems and methods of use thereof | |
IL210029A0 (en) | Methods and compositions for polishing silicon-containing substrates | |
GB0807612D0 (en) | New use of surfactant | |
ZA201104532B (en) | Axmi-150 delta-endotoxin gene and methods for its use | |
SI2427527T1 (en) | Heat transfer compositions and methods | |
HK1155270A1 (en) | Thermal management of graphics processing units | |
EP2344204A4 (en) | Telomerase inhibitors and methods of use thereof | |
EP2311074A4 (en) | Method of polishing nickel-phosphorous | |
EP2246310A4 (en) | Glass composition for substrate | |
AP2008004406A0 (en) | Methods of managing timberland | |
GB0918601D0 (en) | Decahydro-1H-Indenoquinolinone and decahydro-3H-cyclopenaphenanthridinone CYP17 inhibitors | |
EP2367881A4 (en) | High temperature acrylic sheet | |
GB201108036D0 (en) | Management of contact lists | |
AP2784A (en) | Methods of managing timberland | |
HK1163141A1 (en) | Fluoropolymer compositions and treated substrates | |
GB0816459D0 (en) | State of change estimate | |
GB0807451D0 (en) | Inhibitors of PLK | |
IL208916A0 (en) | Inhibitors of jnk | |
HK1167406A1 (en) | Pyrazolone-derivatives and their use as pd4 inhibitors pd4 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20110415 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR |
|
AX | Request for extension of the european patent |
Extension state: AL BA RS |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: MOFFATT, STEPHEN Inventor name: MAYUR, ABHILASH, J. Inventor name: HUNTER, AARON Inventor name: RAMAMURTHY, SUNDAR Inventor name: RANISH, JOSEPH |
|
DAX | Request for extension of the european patent (deleted) | ||
A4 | Supplementary search report drawn up and despatched |
Effective date: 20130422 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 21/67 20060101ALI20130416BHEP Ipc: H01L 21/324 20060101AFI20130416BHEP |
|
17Q | First examination report despatched |
Effective date: 20160610 |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
INTG | Intention to grant announced |
Effective date: 20181120 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20190402 |