JPS58106836A - Laser annealing device - Google Patents

Laser annealing device

Info

Publication number
JPS58106836A
JPS58106836A JP56203741A JP20374181A JPS58106836A JP S58106836 A JPS58106836 A JP S58106836A JP 56203741 A JP56203741 A JP 56203741A JP 20374181 A JP20374181 A JP 20374181A JP S58106836 A JPS58106836 A JP S58106836A
Authority
JP
Japan
Prior art keywords
laser light
region
light source
laser
light sources
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56203741A
Other languages
Japanese (ja)
Inventor
Takaaki Aoshima
青島　孝明
Akira Yoshinaka
吉中　明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56203741A priority Critical patent/JPS58106836A/en
Publication of JPS58106836A publication Critical patent/JPS58106836A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To allow the simultaneous heat treatment of different kind of substances, and suffice the output from individual laser light sources by a method wherein, using a plurality of laser light sources which generate laser lights with different wave lengths, a region larger than a required heating area is preheated by one laser light source, and thereafter a part of the preheted region is heated or fused by the other laser light source. CONSTITUTION:First, the laser light 14 from the laser light source 12 is irradiated onto the region A2 via a mirror 15, and accordingly said region A2 is preheated to a suitable temperature less than the melting point thereof. Next, the laser light 16 from the laser light source 13 is irradiated onto the required treatment region A1 a part of the preheated region A2 via a mirror 17, and accordingly said region A1 is fused. Therefore, a required treatment region A is annealed without the necessity of enlarging so much the output of individual laser light sources 12 and 13. Besides, the annealing treatment can be performed to a large area at a time. Further,the heat treatment before and after the laser annealing can be simultaneously performed.

Description

【発明の詳細な説明】 本発明はレーザーアニール装置に関するものである。[Detailed description of the invention] The present invention relates to a laser annealing device.

最近、たとえば牛導体製品の製造過程においてシリコン
（８ｉ）基板ＫＮしてレーザーアニール処理を總こすこ
とが提案されている。Recently, it has been proposed to subject silicon (8i) substrates to laser annealing in the manufacturing process of, for example, conductor products.

単一波長のレーザー光を発生する１つのレーザー光源を
用いて被処理物の表面を７ニールするものであるの寸、
その吸収係数や吸収端が＾なる異種物質を平面的または
立体的に組み合わせた被処理物をアニールすることはｌ
ｌ１ｌである。また、この場合、レーず一光源の個々に
要求される出力が大きくなり、高エネルギーのレーザー
光の照射による結蟲の瞬間的な溶融、再結晶化によって
被処理物の熱歪や損傷等を生じるという閤腫もある。さ
らに、１つのレーザー光源では、一度に大面積を熱処履
することは困難である。A method that anneals the surface of a workpiece for 7 times using one laser light source that generates laser light of a single wavelength.
It is not possible to anneal a workpiece that is a two-dimensional or three-dimensional combination of different materials with different absorption coefficients and absorption edges.
It is l1l. In addition, in this case, the output required for each laser light source increases, and the instantaneous melting and recrystallization of the worms caused by the irradiation of high-energy laser light can cause thermal distortion and damage to the workpiece. There are also cysts that are said to occur. Furthermore, it is difficult to heat treat a large area at once using one laser light source.

本発明の目的は、前記した開−を解消するためになされ
たもので、異種物質を同時に熱＃ｌＩ＆環でき、また個
々のレーず一光源の出力が小さくて済むレーザーアニー
ル装置を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a laser annealing device that can simultaneously heat and annulate different types of materials and that requires a small output from each laser light source. It is in.

この目的を達成するため１本発明は興なる波長のレーダ
ー光を発生する傭数個のレーダー光源を有するものであ
る。To achieve this objective, one aspect of the present invention includes several radar light sources that generate radar light of different wavelengths.

また、本発明の他の特徴によれば、複数個のし加熱面積
よりも広い領域を予備加熱した後、他のレーザー光源で
予備加熱領域の一部分を加熱又は溶融させる。According to another feature of the present invention, after preheating a region wider than the plurality of heating areas, a portion of the preheating region is heated or melted by another laser light source.

以下、本発明を図面に示す実施例にしたがって説明する
。Hereinafter, the present invention will be explained according to embodiments shown in the drawings.

第１図は本発明によるレーザーアニール装置の一実施例
を示す概略説明図である。本実施例においては、被処理
物ｌはたとえばシリコン（８１）基板である。この被処
理物１の所要領域にレーず一アニール処瑞を施こすため
、本実施例では、２個ル−ザー光源２．３が用いられて
いる。FIG. 1 is a schematic explanatory diagram showing an embodiment of a laser annealing apparatus according to the present invention. In this embodiment, the object to be processed l is, for example, a silicon (81) substrate. In order to perform the laser annealing process on the desired area of the object 1, two loser light sources 2.3 are used in this embodiment.

すなわち、これらのレーザー光源２と３は互いＫＪＩｉ
なる波長のレーザー光を発生するものである。That is, these laser light sources 2 and 3 are mutually KJIi
It generates laser light with a wavelength of .

レーザー光源２からのレーザー光４はミラー５を介して
被処理物１の所要領域に照射される。一方、レーザー光
１１［３はミラー７を介して、前記レーザー光１１２か
らのレーザー光４とは興なる波長のレーザー光６を被処
理物１の同一領域に同時に照射する。Laser light 4 from laser light source 2 is irradiated onto a desired area of workpiece 1 via mirror 5 . On the other hand, the laser beam 11 [3 passes through the mirror 7 and simultaneously irradiates the same area of the workpiece 1 with a laser beam 6 having a different wavelength from that of the laser beam 4 from the laser beam 112.

したがって、本実施例においては、２つのレ−ず一光源
２，３からの異なる波長のレーザー光４゜６かそれぞれ
ミラー５．７を介して被処理物１の同一領域に同時に照
射される。そのため、被処理物１の被処暑領域が、平面
的または立体的に、光の吸収係数や吸収端の興なる異種
物質からなるものでも、各物質に応じた適当な波長のレ
ーザー光をレーザー光源２．３から照射することができ
るので、同時に異種物質な熱処理することができる。Therefore, in this embodiment, laser beams 4.6 of different wavelengths from the two laser light sources 2 and 3 are simultaneously irradiated onto the same area of the workpiece 1 through the mirrors 5.7, respectively. Therefore, even if the heat-exposed region of the object 1 is made of different materials with different light absorption coefficients and absorption edges, whether in a two-dimensional or three-dimensional manner, the laser light source can emit a laser beam with an appropriate wavelength according to each material. Since irradiation can be performed from 2.3 onwards, different materials can be heat-treated at the same time.

しかも、この場合には、個々のレーザー光源２゜３の出
力を小さくすることができ、被処理物１の損傷を軽減で
きる。また、被処理物１の温度勾配を小さくすることが
でき、被処理物１の熱歪な減少させることができる。Moreover, in this case, the output of each laser light source 2.3 can be reduced, and damage to the object 1 to be processed can be reduced. Moreover, the temperature gradient of the object 1 to be processed can be reduced, and the thermal strain of the object 1 to be processed can be reduced.

第２ＷＪは本発明による他の１つの実施例を示す概略説
明図である。本実施例の場合にも前記実施例と同様ＫＩ
ｌ処環物１１の熱処理を行うために被数個のレーザー光
源１２．１３が用いられている。The second WJ is a schematic explanatory diagram showing another embodiment according to the present invention. In the case of this embodiment as well, KI
Several laser light sources 12 and 13 are used to heat treat the treated product 11.

レーず一光源１２は彼処１１１ｍＦ１１の所要処理領域
ム、よりも大きい領域Ａ、を融点以下の適当な温度に予
備加熱するためのものであり、このレーザー光源１２か
らのレーザー光１４はミラー１５を介して被処理物１１
の領域Ａ、に照射する。The laser light source 12 is used to preheat an area A larger than the required processing area M of 111 mF 11 to an appropriate temperature below the melting point, and the laser beam 14 from this laser light source 12 heats the mirror 15. Processed object 11 through
irradiate area A.

一方、レーザー光源１３は被処理物１１の所要処珈領域
Ａ、を最終的に溶融させるものであり、前記レーザー光
源１２からのレーザー光１４で予備加熱された領域Ａ、
のうちの所要処理領域人。On the other hand, the laser light source 13 is used to finally melt the required treatment area A of the workpiece 11, and the area A preheated by the laser beam 14 from the laser light source 12,
The required processing area of the person.

に対し、レーザー光１６をミラー１７を介して照射する
。A laser beam 16 is irradiated onto the mirror 17 through a mirror 17.

すなわち、本実施例においては、まず最初にレーザー光
源１２からのレーザー光１４をミラー１５を介して領域
Ａ、に照射して該領域Ａ、をその融点以）の適当な温度
に予備加熱する。次に、レーザー光源１３からのレーザ
ー光１６をミラー１７を介して、予備加熱領域Ａ、の一
部分である所要処ｍｑ域Ａ１に照射して該領域Ａ、を溶
融させる。That is, in this embodiment, first, the region A is irradiated with laser light 14 from the laser light source 12 via the mirror 15 to preheat the region A to an appropriate temperature (below its melting point). Next, the laser beam 16 from the laser light source 13 is irradiated via the mirror 17 to the required treatment mq region A1, which is a part of the preheating region A, to melt the region A.

したがって、本実施例によれば、個々のレーザー光源１
２．１３の出力をあまり大きくする必要なく所要の処１
［領域Ａ、をアニール処理できる。Therefore, according to this embodiment, each laser light source 1
2. Required processing 1 without the need to increase the output of 13 too much
[Region A can be annealed.

また、一度に大きい面積のアニール処理が司能である。It is also capable of annealing large areas at once.

さらに、レーザーアニール前後の熱処理を同時に行うこ
ともできる。Furthermore, heat treatment before and after laser annealing can be performed simultaneously.

なお、前記両実施例では２個のレーザー光源を用いてい
るが、３個以上のレーず一光源を用いてもよいことは勿
論である。また、レーザー光源の組合せだけでなく、他
の赤外線光源、白色光光源と組合せることもできる。Although two laser light sources are used in both of the above embodiments, it is of course possible to use three or more laser light sources. In addition to the combination of laser light sources, it is also possible to combine with other infrared light sources and white light sources.

以上説明したように、本発明によれば、異種物質でも同
時にアニール処理できる。また、個々のレーず一光源の
出力をあまり大きくする必要がなく、被処理物の熱歪や
損傷を減少することもできる。As explained above, according to the present invention, different materials can be annealed at the same time. Furthermore, it is not necessary to increase the output of each laser light source so much that thermal distortion and damage to the object to be processed can be reduced.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明によるレーザーアニール装置の一実施例
を示す概略説明図、第２図は本発明の他の１つの実施例
を示す概略説明図である。 ｌ・・・被処理物、２，３・・・レーザー光源、４．６
・・・レーザー光、５．７・・・ミラー、１１・・・被
処理物、１２．１３・・・レーザー光源、１４．１６・
・・レーザー光、１５．１７・・・ミラー。 代理人　弁理士　　薄　１）利、ｊｌ’−Ａ；ｓ″　　
・　１ 第　　１　　図 第　　２　　図FIG. 1 is a schematic explanatory diagram showing one embodiment of a laser annealing apparatus according to the present invention, and FIG. 2 is a schematic explanatory diagram showing another embodiment of the present invention. l...Object to be processed, 2, 3...Laser light source, 4.6
... Laser light, 5.7... Mirror, 11... Processing object, 12.13... Laser light source, 14.16.
...laser light, 15.17...mirror. Agent Patent Attorney Susuki 1) Li, jl'-A;s″
・1 Figure 1 Figure 2

Claims (1)

【特許請求の範囲】 １、　　ＩＩ歇数個レーず一光源を備え、前記箇数個の
レーザー光源から互いＫＪＩＩなる波長のレーザー光を
被処瑠面上に照射するよう構成したレーザーアニール装
置。 ２、　　＠数個の光源の５ち、少なくとも１個のレーザ
ー光源を備え、１つの光源で所要の加熱面積よりも広い
領域を融点以下の適当な温度に予備加熱し、他の光源で
前記予備加熱領域の少なくとも一部分をさらに加熱させ
るよう構成したレーザーアニール装置。[Scope of Claims] 1. A laser annealing apparatus comprising several laser light sources and configured to irradiate a surface to be treated with laser light of wavelengths KJII from each of the laser light sources. 2. @Equipped with at least one laser light source among several light sources, one light source preheats an area wider than the required heating area to an appropriate temperature below the melting point, and the other light source heats the preheating area. A laser annealing device configured to further heat at least a portion of a heating region.
JP56203741A 1981-12-18 1981-12-18 Laser annealing device Pending JPS58106836A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56203741A JPS58106836A (en) 1981-12-18 1981-12-18 Laser annealing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56203741A JPS58106836A (en) 1981-12-18 1981-12-18 Laser annealing device

Publications (1)

Publication Number Publication Date
JPS58106836A true JPS58106836A (en) 1983-06-25

Family

ID=16479078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56203741A Pending JPS58106836A (en) 1981-12-18 1981-12-18 Laser annealing device

Country Status (1)

Country Link
JP (1) JPS58106836A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62160781A (en) * 1986-01-09 1987-07-16 Agency Of Ind Science & Technol Laser light projecting apparatus
JPS63147313A (en) * 1986-12-10 1988-06-20 Sanyo Electric Co Ltd Formation of soi film
JPH027422A (en) * 1988-06-24 1990-01-11 Ricoh Co Ltd High-temperature heat treatment by laser
JPH02226718A (en) * 1989-02-28 1990-09-10 Semiconductor Energy Lab Co Ltd Production of unsingle crystal semiconductor
JPH05206053A (en) * 1992-01-30 1993-08-13 Matsushita Electric Ind Co Ltd Crystal damage remover
GB2406709A (en) * 2000-12-04 2005-04-06 Vortek Ind Ltd Heat-treating methods and systems
US6941063B2 (en) 2000-12-04 2005-09-06 Mattson Technology Canada, Inc. Heat-treating methods and systems
WO2008128781A1 (en) * 2007-04-24 2008-10-30 Limo Patentverwaltung Gmbh & Co. Kg Method for restructuring semiconductor layers
WO2010033389A1 (en) 2008-09-17 2010-03-25 Applied Materials, Inc. Managing thermal budget in annealing of substrates
US9070590B2 (en) 2008-05-16 2015-06-30 Mattson Technology, Inc. Workpiece breakage prevention method and apparatus
US9114479B2 (en) 2008-09-17 2015-08-25 Applied Materials, Inc. Managing thermal budget in annealing of substrates
WO2016093287A1 (en) * 2014-12-10 2016-06-16 東京エレクトロン株式会社 Microstructure formation method, method for manufacturing semiconductor device, and cmos formation method
US9627244B2 (en) 2002-12-20 2017-04-18 Mattson Technology, Inc. Methods and systems for supporting a workpiece and for heat-treating the workpiece

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62160781A (en) * 1986-01-09 1987-07-16 Agency Of Ind Science & Technol Laser light projecting apparatus
JPS63147313A (en) * 1986-12-10 1988-06-20 Sanyo Electric Co Ltd Formation of soi film
JPH027422A (en) * 1988-06-24 1990-01-11 Ricoh Co Ltd High-temperature heat treatment by laser
JPH02226718A (en) * 1989-02-28 1990-09-10 Semiconductor Energy Lab Co Ltd Production of unsingle crystal semiconductor
JPH05206053A (en) * 1992-01-30 1993-08-13 Matsushita Electric Ind Co Ltd Crystal damage remover
GB2406709A (en) * 2000-12-04 2005-04-06 Vortek Ind Ltd Heat-treating methods and systems
US6941063B2 (en) 2000-12-04 2005-09-06 Mattson Technology Canada, Inc. Heat-treating methods and systems
US9627244B2 (en) 2002-12-20 2017-04-18 Mattson Technology, Inc. Methods and systems for supporting a workpiece and for heat-treating the workpiece
CN101680107A (en) * 2007-04-24 2010-03-24 Limo专利管理有限及两合公司 Method for restructuring semiconductor layers
WO2008128781A1 (en) * 2007-04-24 2008-10-30 Limo Patentverwaltung Gmbh & Co. Kg Method for restructuring semiconductor layers
US9070590B2 (en) 2008-05-16 2015-06-30 Mattson Technology, Inc. Workpiece breakage prevention method and apparatus
WO2010033389A1 (en) 2008-09-17 2010-03-25 Applied Materials, Inc. Managing thermal budget in annealing of substrates
EP2342739A1 (en) * 2008-09-17 2011-07-13 Applied Materials, Inc. Managing thermal budget in annealing of substrates
JP2012503311A (en) * 2008-09-17 2012-02-02 アプライド マテリアルズ インコーポレイテッド Control of heat during substrate annealing
EP2342739A4 (en) * 2008-09-17 2013-05-22 Applied Materials Inc Managing thermal budget in annealing of substrates
US9114479B2 (en) 2008-09-17 2015-08-25 Applied Materials, Inc. Managing thermal budget in annealing of substrates
US9595459B2 (en) 2008-09-17 2017-03-14 Applied Materials, Inc. Managing thermal budget in annealing of substrates
WO2016093287A1 (en) * 2014-12-10 2016-06-16 東京エレクトロン株式会社 Microstructure formation method, method for manufacturing semiconductor device, and cmos formation method

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