JPS58106836A - Laser annealing device - Google Patents

Laser annealing device

Info

Publication number
JPS58106836A
JPS58106836A JP56203741A JP20374181A JPS58106836A JP S58106836 A JPS58106836 A JP S58106836A JP 56203741 A JP56203741 A JP 56203741A JP 20374181 A JP20374181 A JP 20374181A JP S58106836 A JPS58106836 A JP S58106836A
Authority
JP
Japan
Prior art keywords
laser light
region
light source
preheated
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56203741A
Inventor
Takaaki Aoshima
Akira Yoshinaka
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56203741A priority Critical patent/JPS58106836A/en
Publication of JPS58106836A publication Critical patent/JPS58106836A/en
Application status is Pending legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352Working by laser beam, e.g. welding, cutting or boring for surface treatment

Abstract

PURPOSE:To allow the simultaneous heat treatment of different kind of substances, and suffice the output from individual laser light sources by a method wherein, using a plurality of laser light sources which generate laser lights with different wave lengths, a region larger than a required heating area is preheated by one laser light source, and thereafter a part of the preheted region is heated or fused by the other laser light source. CONSTITUTION:First, the laser light 14 from the laser light source 12 is irradiated onto the region A2 via a mirror 15, and accordingly said region A2 is preheated to a suitable temperature less than the melting point thereof. Next, the laser light 16 from the laser light source 13 is irradiated onto the required treatment region A1 a part of the preheated region A2 via a mirror 17, and accordingly said region A1 is fused. Therefore, a required treatment region A is annealed without the necessity of enlarging so much the output of individual laser light sources 12 and 13. Besides, the annealing treatment can be performed to a large area at a time. Further,the heat treatment before and after the laser annealing can be simultaneously performed.
JP56203741A 1981-12-18 1981-12-18 Laser annealing device Pending JPS58106836A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56203741A JPS58106836A (en) 1981-12-18 1981-12-18 Laser annealing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56203741A JPS58106836A (en) 1981-12-18 1981-12-18 Laser annealing device

Publications (1)

Publication Number Publication Date
JPS58106836A true JPS58106836A (en) 1983-06-25

Family

ID=16479078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56203741A Pending JPS58106836A (en) 1981-12-18 1981-12-18 Laser annealing device

Country Status (1)

Country Link
JP (1) JPS58106836A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62160781A (en) * 1986-01-09 1987-07-16 Agency Of Ind Science & Technol Laser light projecting apparatus
JPS63147313A (en) * 1986-12-10 1988-06-20 Sanyo Electric Co Ltd Formation of soi film
EP0278643A1 (en) * 1987-01-30 1988-08-17 Walter W. Duley Means for enhancing laser processing efficiency of metals
JPH027422A (en) * 1988-06-24 1990-01-11 Ricoh Co Ltd High-temperature heat treatment by laser
JPH02226718A (en) * 1989-02-28 1990-09-10 Semiconductor Energy Lab Co Ltd Production of unsingle crystal semiconductor
JPH05206053A (en) * 1992-01-30 1993-08-13 Matsushita Electric Ind Co Ltd Crystal damage remover
GB2406709A (en) * 2000-12-04 2005-04-06 Vortek Ind Ltd Heat-treating methods and systems
US6941063B2 (en) 2000-12-04 2005-09-06 Mattson Technology Canada, Inc. Heat-treating methods and systems
WO2008128781A1 (en) * 2007-04-24 2008-10-30 Limo Patentverwaltung Gmbh & Co. Kg Method for restructuring semiconductor layers
WO2010033389A1 (en) 2008-09-17 2010-03-25 Applied Materials, Inc. Managing thermal budget in annealing of substrates
US9070590B2 (en) 2008-05-16 2015-06-30 Mattson Technology, Inc. Workpiece breakage prevention method and apparatus
US9114479B2 (en) 2008-09-17 2015-08-25 Applied Materials, Inc. Managing thermal budget in annealing of substrates
WO2016093287A1 (en) * 2014-12-10 2016-06-16 東京エレクトロン株式会社 Microstructure formation method, method for manufacturing semiconductor device, and cmos formation method
US9627244B2 (en) 2002-12-20 2017-04-18 Mattson Technology, Inc. Methods and systems for supporting a workpiece and for heat-treating the workpiece

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62160781A (en) * 1986-01-09 1987-07-16 Agency Of Ind Science & Technol Laser light projecting apparatus
JPS63147313A (en) * 1986-12-10 1988-06-20 Sanyo Electric Co Ltd Formation of soi film
EP0278643A1 (en) * 1987-01-30 1988-08-17 Walter W. Duley Means for enhancing laser processing efficiency of metals
JPH027422A (en) * 1988-06-24 1990-01-11 Ricoh Co Ltd High-temperature heat treatment by laser
JPH02226718A (en) * 1989-02-28 1990-09-10 Semiconductor Energy Lab Co Ltd Production of unsingle crystal semiconductor
JPH05206053A (en) * 1992-01-30 1993-08-13 Matsushita Electric Ind Co Ltd Crystal damage remover
GB2406709A (en) * 2000-12-04 2005-04-06 Vortek Ind Ltd Heat-treating methods and systems
US6941063B2 (en) 2000-12-04 2005-09-06 Mattson Technology Canada, Inc. Heat-treating methods and systems
US9627244B2 (en) 2002-12-20 2017-04-18 Mattson Technology, Inc. Methods and systems for supporting a workpiece and for heat-treating the workpiece
WO2008128781A1 (en) * 2007-04-24 2008-10-30 Limo Patentverwaltung Gmbh & Co. Kg Method for restructuring semiconductor layers
CN101680107A (en) * 2007-04-24 2010-03-24 Limo专利管理有限及两合公司 Method for restructuring semiconductor layers
US9070590B2 (en) 2008-05-16 2015-06-30 Mattson Technology, Inc. Workpiece breakage prevention method and apparatus
WO2010033389A1 (en) 2008-09-17 2010-03-25 Applied Materials, Inc. Managing thermal budget in annealing of substrates
EP2342739A1 (en) * 2008-09-17 2011-07-13 Applied Materials, Inc. Managing thermal budget in annealing of substrates
EP2342739A4 (en) * 2008-09-17 2013-05-22 Applied Materials Inc Managing thermal budget in annealing of substrates
US9114479B2 (en) 2008-09-17 2015-08-25 Applied Materials, Inc. Managing thermal budget in annealing of substrates
US9595459B2 (en) 2008-09-17 2017-03-14 Applied Materials, Inc. Managing thermal budget in annealing of substrates
JP2012503311A (en) * 2008-09-17 2012-02-02 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Management of heat in the annealing of the substrate
WO2016093287A1 (en) * 2014-12-10 2016-06-16 東京エレクトロン株式会社 Microstructure formation method, method for manufacturing semiconductor device, and cmos formation method

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