JP3982136B2 - Laser processing method and apparatus - Google Patents

Laser processing method and apparatus Download PDF

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Publication number
JP3982136B2
JP3982136B2 JP2000027806A JP2000027806A JP3982136B2 JP 3982136 B2 JP3982136 B2 JP 3982136B2 JP 2000027806 A JP2000027806 A JP 2000027806A JP 2000027806 A JP2000027806 A JP 2000027806A JP 3982136 B2 JP3982136 B2 JP 3982136B2
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laser
laser beam
workpiece
processing
irradiating
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JP2001212685A (en
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淳 尼子
一成 梅津
斉 中尾
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Seiko Epson Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B23K26/0613—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams having a common axis
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B23K26/0619—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams with spots located on opposed surfaces of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/60—Preliminary treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/30—Organic material
    • B23K2103/32—Material from living organisms, e.g. skins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/52—Ceramics

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Lasers (AREA)
  • Laser Beam Processing (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明はレーザ加工方法及びその装置に関し、特に超短パルスレーザを適用した微細加工技術に関する。
【０００２】
【従来の技術】
超短パルスレーザを適用した微細加工については、例えば「超短パルスレーザによるクロム薄膜のアブレーション加工」ｐ５３−６０、第４８回レーザ熱加工研究会論文集（１９９９．１２）において提案されている加工方法がある。
【０００３】
上記の文献においては、フェムト秒領域（〜１０-13秒）の超短パルスレーザを光源に用いてフォトマスクに応用されるクロム膜にレーザ光を照射して熱損傷の無いアブレーション加工について提案している。
【０００４】
図６は上記の文献において報告されている加工方法により得られた被加工物の加工断面図であり、フェムト秒領域（〜１０-13秒）のパルス幅の超短パルスレーザ光を複数回照射したときの加工断面を示している。同図からも明らかなように、加工周囲に熱損傷の無い、シャープな加工エッジをもったパターンが得られている。しかし、加工底部２２には円錐状のクロム残渣２３が散在している。
【０００５】
図７は上記よりもパルス幅の広い（例えばナノ秒の領域）パルスレーザ光を照射したときの加工断面図である。パルスレーザ光が照射された領域のクロム薄膜２１は殆ど除去されており、加工底部２２には残渣がなく、また、水晶基板２０に対するダメージの無いフラットな加工面が得られている。しかし、加工周囲には熱損傷によるロールアップ２４と呼ばれる溶融・再凝固部による盛り上がりが観測され、加工領域が広がっている。
【０００６】
【発明が解決しようとする課題】
上記のような従来のレーザ加工方法においては、アブレーションと熱伝導効果とを両立するための加工条件を見い出すことが難しかった。このため、熱損傷や加工の不均一が起こり、高精度な微細加工ができなかった。
【０００７】
本発明は、上記のような問題点を解決するためになされたものであり、アブレーションと熱伝導効果とを両立させて高精度な微細加工を可能にしたレーザ加工方法及びその装置を提供することを目的とする。
【０００８】
【課題を解決するための手段】
本発明に係るレーザ加工方法は、第１のレーザ光を照射して被加工物を予備加熱する工程と、第２のレーザ光を照射して予備加熱された被加工物を加工する工程とを有し、第２のレーザ光はフェムト秒レーザ光である。本発明においては、第１のレーザ光により被加工物を予め加熱してからフェムト秒レーザ光により加工を施すようにしたので、フェムト秒レーザ光による加工が適切になされており、加工底部に残渣が生ぜず、また、加工周囲の熱損傷が抑制され、シャープな加工形状が得られる。このため、高精度な微細加工が可能になっている。また、予備加熱を第１のレーザ光を照射することにより行っているので、加熱箇所を所望の箇所に限定することができ、例えば残渣が予想される部位に限って予備加熱をすることができるので、この点からも高精度な加工が可能になっている。
【００１０】
本発明に係るレーザ加工方法において、上記の第１のレーザ光は連続したレーザ光である。
また、本発明に係るレーザ加工方法において、上記の第１のレーザ光はパルスレーザ光である。
また、本発明に係るレーザ加工方法において、予備加熱は被加工物の溶融温度を超えないようにする。第１のレーザ光による被加工物に対する不可逆的な変化を避け、予備加熱による加工を避ける。
【００１１】
また、本発明に係るレーザ加工方法は、第１のレーザ光を照射している間に第２のレーザ光を照射する。
また、本発明に係るレーザ加工方法は、第１のレーザ光を照射した後に、第２のレーザ光を照射する。
【００１２】
また、本発明に係るレーザ加工方法は、第１のレーザ光と第２のレーザ光とを、被加工物に対して同じ方向から照射する。
また、本発明に係るレーザ加工方法は、第１のレーザ光と第２のレーザ光とを、被加工物に対して反対方向から照射することを特徴とする。
【００１３】
また、本発明に係るレーザ加工方法は、第１のレーザ光により一光子吸収過程よる予備加熱を行い、第２のレーザ光により多光子吸収過程よる加工を行う。予備加熱を行った後にフェムト秒レーザ光を照射するので、多光吸収が起こりやすくなっており、光化学反応によるアブレーション加工が行われ、熱損傷が抑制される。
また、本発明に係るレーザ加工方法は、第１のレーザ光の集光スポット径を第２のレーザ光による集光スポット径よりも小さく設定する。予備加熱を主として加工底部の残渣が生じ易い部位に行ってその部位の熱的ポテンシャルを上昇しておくことにより加工底部に残渣が生ぜず、また、加工形状も更にシャープになる。
【００１４】
本発明に係るレーザ加工装置は、被加工物にレーザ光を照射して予備加熱する第１のレーザと、被加工物にレーザ光を照射して予備加熱された被加工物を加工する第２のレーザとを有し、第２のレーザはフェムト秒パルスレーザである。本発明においては、第１のレーザ光により被加工物を予備加熱してからフェムト秒パルスレーザにより加工を施すようにしたので、フェムト秒パルスレーザ光による加工が適切になされており、加工底部に残渣が生ぜず、また、加工周囲の熱損傷が抑制され、シャープな加工形状が得られる。このため、高精度な微細加工が可能になっている。また、予備加熱を第１のレーザ光を照射することにより行っているので、加熱箇所を所望の箇所に限定することができ、例えば残渣が予想される部位に限って予備加熱をすることができるので、この点からも高精度な加工が可能になっている。
【００１６】
また、本発明に係るレーザ加工装置において、第１のレーザは連続したレーザ光を出力するものである。
また、本発明に係るレーザ加工装置において、第１のレーザはパルスレーザ光を出力するものである。
【００１７】
また、本発明に係るレーザ加工装置は、第１のレーザと第２のレーザとを駆動して、第１のレーザによる照射をしている間に第２のレーザを照射させる制御手段を有する。
また、本発明に係るレーザ加工装置は、第１のレーザ及び第２のレーザを駆動して、第１のレーザにより照射を行った後に、第２のレーザによる照射を行わせる制御手段を有する。
【００１８】
また、本発明に係るレーザ加工装置は、第１のレーザと第２のレーザとを、被加工物に対して同じ方向から照射するための光学系を有する。
また、本発明に係るレーザ加工装置は、第１のレーザと第２のレーザとを、被加工物に対して反対方向から照射するための光学系を有する。
また、本発明に係るレーザ加工装置は、第１のレーザによるレーザ光の集光スポット径を第２のレーザによる集光スポット径よりも小さく設定するための光学系を有する。予備加熱を主として加工底部の残渣が生じ易い部位に行ってその部位の熱的ポテンシャルを上昇させておくことにより加工底部に残渣が生ぜず、また、加工形状も更にシャープになる。
【００１９】
【発明の実施の形態】
実施形態１．
図１は本発明の実施形態１に係るレーザー加工装置の構成を示すブロック図である。このレーザー加工装置は、ＹＡＧレーザ１０及びチタンサファイアレーザ（フェムト秒レーザ）１１を備えており、これらは制御装置１２によりその照射タイミングが制御される。ＹＡＧレーザ１０は、波長λ１：１０６４ｎｍ、パルス幅Δｔ１：１０ｎｓのパルスレーザ光１０ａを出力する。チタンサファイアレーザ１１は、波長λ２：８００ｎｍ、パルス幅Δｔ２：１００ｆｓのフェムト秒レーザ光１１ａを出力する。
【００２０】
ＹＡＧレーザ１０からのパルスレーザ光１０ａは、ビームスプリッタ１５にて反射された後に、集光レンズ（焦点距離ｆ１００ｍｍ）１６にて集光されて、水晶基板２０上に形成されているクロム膜２１に照射される。また、チタンサファイアレーザ１１からのフェムト秒レーザ光１１ａは、全反射ミラー１４にて反射された後に、ビームスプリッタ１５を透過した後に、集光レンズ１６にて集光されてクロム膜２１に照射される。水晶基板２０はＸＹテーブル３０上に配置されており、ＸＹテーブル３０を加工形状に対応して移動することにより、クロム膜２１が所望の形状に加工される。なお、全反射ミラー１４は８００ｎｍのレーザ光を反射し、また、ビームビームスプリッタ１５は波長が８００ｎｍのレーザ光を透過して波長が１０６４ｎｍのレーザ光を反射するように設定されているものとする。
【００２１】
図２は図１のレーザー加工装置の動作を示すタイミングチャートである。制御装置１２から制御信号１２ａが出力されると、ＹＡＧレーザ１０はその制御信号１２ａとほぼ同じパルス幅（Δｔ１：１０ｎｓ）のパルスレーザ光１０ａを出力してクロム膜２１に照射する。また、その所定時間後に、制御装置１２から制御信号１２ｂが出力されると、チタンサファイアレーザ１１はその制御信号１２の立ち上がりに同期した、パルス幅Δｔ２：１００ｆｓのフェムト秒レーザ光１１ａを出力してクロム膜２１の上記の照射位置と同じ位置に照射する。
【００２２】
パルスレーザ光１０ａが照射されるとクロム膜２１の温度は次第に上昇していき、熱的ポテンシャルが高くなる。但し、この時の最大温度はクロム膜２１の溶融温度を超えないようにし、クロム膜２１には不可逆的な変化を与えないようにする。そして、このような状態のときに、フェムト秒レーザ光１１ａが照射されることで、熱的ポテンシャルが高くなっているクロム膜２１が気化してアブレーション加工がなされる。なお、このときのフェムト秒レーザ光１１ａのエネルギー密度は、予備加熱後の被加工物に対する加工閾値よりも若干大きめに設定するものとする。
【００２３】
ここで、フェムト秒レーザ光１１ａの照射による動作を説明する。一般に、クロム膜２１に照射されたレーザ光のエネルギーは電子に吸収された後に格子系へ移動してクロム膜２１の温度を上昇させる。その後に、熱はクロム特有の熱物性に従って周囲に拡散していく。しかし、フェムト秒レーザ光１１ａのパルス幅は電子から格子系へのエネルギーの移動時間よりも短いので、パルス光が照射中に照射領域外に拡散しない。このため、照射領域を効率良く加熱することができ、周囲への熱損傷の抑制が可能になっている。
【００２４】
また、フェムト秒レーザ光１１ａの照射による動作を別の観点から説明する。パルスレーザ光１０ａはエネルギー密度の小さいレーザ光が得られているから、１光子分吸収過程が行われており、パルス幅が長い（時間が長い）ことから熱拡散が行われる。そして、上記の予備加熱により多光子吸収過程が起きやすい状態になっているときに、上述のフェムト秒レーザ光１１ａが照射されると、そのパルス幅が短いことから結果的にエネルギー密度の大きいレーザ光が照射されて多光子吸収過程が起き、エネルギーがバンドギャップを超えて分子が分離する。このようにして被加工物のアブレーション加工が、熱反応よらず、光・化学反応によりなされるので、加工周囲への熱損傷の抑制ができ、高精度な微細加工が可能になっている。
【００２５】
図３は上記の実施形態による加工断面図である。上述のように、パルスレーザ１０ａにより予備加熱をしてからフェムト秒レーザ光１１ａを照射して加工するようにしたので、図示のように、加工底部２２には残渣が生じることなく、また、加工形状も熱損傷がなくシャープな加工形状になっている。
【００２６】
実施形態２．
図４は本発明の実施形態２に係るレーザー加工装置の構成を示すブロック図である。このレーザー加工装置は、上記の実施形態と同様に、ＹＡＧレーザ１０及びチタンサファイアレーザ１１を備えており、これらは制御装置１２によりその照射タイミングが制御される。ＹＡＧレーザ１０からのパルスレーザ光１０ａは集光レンズ１６にて集光されてクロム膜２に照射される。また、チタンサファイアレーザ（フェムト秒レーザ）１１からのフェムト秒レーザ光１１ａは全反射ミラー１７，１８にて反射されて集光レンズ１９にて集光され、水晶基板２０を介してクロム膜２１に照射される。このようにして、クロム膜２１にはその裏側及び表側の両側からフェムト秒レーザ光１１ａ及びパルスレーザ光１０ｂが照射される。そして、上記の実施形態と同様に、クロム膜２１はパルスレーザ光１０ａの照射により予備加熱がなされ、フェムト秒レーザ光１１ａの照射によりアブレーション加工が施される。なお、全反射ミラー１７，１８は波長が８００ｎｍのレーザ光を反射するように設定されているものとする。
【００２７】
ところで、上記の実施形態においては、パルスレーザ光１０ａをクロム膜２１の表側から照射し、フェムト秒レーザ光１１ａをクロム膜２１の裏側から照射した例を示したが、その逆でも良い。即ち、フェムト秒レーザ光１１ａをクロム膜２１の表側から照射し、パルスレーザ光１０ａをクロム膜２１の裏側から照射してもた良い。いずれの場合においても、水晶基板２０を介してクロム膜２１にレーザ光を照射する場合には、レーザ光の波長を水晶基板２０を透過し易い波長に設定する必要がある。
【００２８】
実施形態３．
図５は上記実施形態１，２においてクロム膜に照射されるレーザ光の集光スポットの大きさの説明図である。図示の例においては、パルスレーザ光１０ａの集光スポット１０ｂをフェムト秒レーザ光１１ａの集光スポット１１ｂよりも小さくしており、主として加工底部２２に相当する位置の熱的ポテンシャルを上昇させておいて、フェムト秒レーザ光１１ａを照射させた際に残渣が残らないようにしている。また、加工部の周囲の熱的ポテンシャルを上げないようしてシャープな加工形状が得られるようにしてある。
【００２９】
なお、図５の例は典型的な例であり、この他に、集光スポット１０ｂ＝集光スポット１１ｂ、或いは、集光スポット１０ｂ＞フェムト秒レーザ光１１ａの集光スポット１１ｂであっても良い。なお、この集光スポットの径の調整は、例えばＹＡＧレーザ１０又はチタンサファイアレーザ１１にビームエキスパンダを内蔵しておいてビーム径を調整したり、或いは、ＹＡＧレーザ１０又はチタンサファイアレーザ１１から出射されたレーザ光の光学系にビームエキスパンダを挿入することでビーム径を調整することによりなされる。
【００３０】
実施形態４．
また、被加工物を予備加熱するためのレーザ光は、必ずしもパルスレーザ光である必要はなく連続光であっても良い。また、その光源はＹＡＧレーザに限られず他の固体レーザ、或いはガスレーザ（例えばＣＯ２レーザ）、半導体レーザを用いても良い。また、被加工物に加工を施すためのレーザについてもチタンサファイアレーザに限られず他のレーザであっても良い。また、上記のＹＡＧレーザ１０とチタンサファイアレーザ１１とではその波長を異ならせた例（λ１＞λ２）について示したが、その波長については同じでも良い。また、発明に係る超短パルスレーザは、熱損傷が抑制されれば良いので、そのパルス幅がフェムト秒領域〜ピコ秒領域（〜１０-15秒−１０-12秒）のパルス幅のパルスレーザが該当する。
【００３１】
また、被加工物は、上記のクロム膜に限定されるものではなく、例えばアルミナ、シリコン、ゲルマニウム、水晶等の熱伝導率の高い材料においても熱拡散領域が限定されるので精密な加工ができる。更に、本発明の加工は生体、例えば角膜、歯、脳等のレーザアブレーションにも適用することができる。
【図面の簡単な説明】
【図１】本発明の実施形態１に係るレーザー加工装置の構成を示すブロック図である。
【図２】図１のレーザー加工装置の動作を示すタイミングチャートである。
【図３】本実施形態による加工断面図である。
【図４】本発明の実施形態２に係るレーザー加工装置の構成を示すブロック図である。
【図５】クロム膜に照射されるレーザ光の集光スポットの大きさの説明図である。
【図６】先行文献において報告されている加工断面図である。
【図７】図６の例よりもパルス幅の広いレーザ光をを照射したときの加工断面図である。
【符号の説明】
１０ ＹＡＧレーザ
１１ チタンサファイアレーザ
１４，１７，１８ 反射ミラー
１５ ビームスプリッタ
１６，１９ 集光レンズ
２０ 水晶基板
２１ クロム膜
３０ ＸＹテーブル[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a laser processing method and an apparatus therefor, and more particularly to a fine processing technique using an ultrashort pulse laser.
[0002]
[Prior art]
As for microfabrication using an ultrashort pulse laser, for example, the processing proposed in “Ablation Machining of Chromium Thin Films by Ultrashort Pulse Laser” p53-60, Proc. 48th Laser Thermal Processing Research Group (1999.12). There is a way.
[0003]
In the above-mentioned document, ablation processing without thermal damage is proposed by irradiating a chromium film applied to a photomask with a laser beam to an ultrashort pulse laser in the femtosecond region ( -10-13 seconds) as a light source. ing.
[0004]
FIG. 6 is a cross-sectional view of a workpiece obtained by the processing method reported in the above-mentioned literature, and an ultrashort pulse laser beam having a pulse width in a femtosecond region (10 −13 seconds) is irradiated a plurality of times. The processing cross section when doing is shown. As is apparent from the figure, a pattern having a sharp processing edge without thermal damage around the processing is obtained. However, conical chromium residues 23 are scattered on the processed bottom 22.
[0005]
FIG. 7 is a cross-sectional view of processing when irradiated with pulsed laser light having a wider pulse width (for example, nanosecond region) than the above. The chromium thin film 21 in the region irradiated with the pulsed laser light is almost removed, and there is no residue on the processed bottom 22 and a flat processed surface without damage to the quartz substrate 20 is obtained. However, a swell due to a melted / resolidified portion called a roll-up 24 due to thermal damage is observed around the processing, and the processing area is widened.
[0006]
[Problems to be solved by the invention]
In the conventional laser processing methods as described above, it has been difficult to find processing conditions for achieving both ablation and a heat conduction effect. For this reason, thermal damage and non-uniform processing occurred, and high-precision fine processing could not be performed.
[0007]
The present invention has been made in order to solve the above-described problems, and provides a laser processing method and apparatus capable of achieving high-precision fine processing by achieving both ablation and a heat conduction effect. With the goal.
[0008]
[Means for Solving the Problems]
The laser processing method according to the present invention includes a step of preheating a workpiece by irradiating a first laser beam, and a step of processing the preheated workpiece by irradiating a second laser beam. And the second laser beam is a femtosecond laser beam. In the present invention, since the workpiece is preheated with the first laser beam and then processed with the femtosecond laser beam, the processing with the femtosecond laser beam is appropriately performed, and a residue is formed on the bottom of the processing. In addition, thermal damage around the machining is suppressed, and a sharp machining shape can be obtained. For this reason, high-precision fine processing is possible. In addition, since the preheating is performed by irradiating the first laser beam, the heating location can be limited to a desired location, and for example, the preheating can be limited only to a location where a residue is expected. Therefore, high-precision processing is possible from this point.
[0010]
In the laser processing method according to the present invention, the first laser beam is a continuous laser beam.
In the laser processing method according to the present invention, the first laser beam is a pulsed laser beam.
In the laser processing method according to the present invention, the preheating is performed so as not to exceed the melting temperature of the workpiece. Avoid irreversible changes to the workpiece by the first laser beam and avoid pre-heating processing.
[0011]
In the laser processing method according to the present invention, the second laser beam is irradiated while the first laser beam is irradiated.
In the laser processing method according to the present invention, the second laser beam is irradiated after the first laser beam is irradiated.
[0012]
In the laser processing method according to the present invention, the workpiece is irradiated with the first laser beam and the second laser beam from the same direction.
The laser processing method according to the present invention is characterized in that the first laser beam and the second laser beam are irradiated to the workpiece from opposite directions.
[0013]
In the laser processing method according to the present invention, preheating is performed by the first laser beam by the one-photon absorption process, and processing by the multi-photon absorption process is performed by the second laser beam. Since the femtosecond laser beam is irradiated after the preheating, multi-light absorption is likely to occur, ablation processing is performed by a photochemical reaction, and thermal damage is suppressed.
In the laser processing method according to the present invention, the focused spot diameter of the first laser beam is set smaller than the focused spot diameter of the second laser beam. By performing preheating mainly on a portion where the residue at the bottom of the machining is likely to be generated and increasing the thermal potential of the portion, no residue is generated at the bottom of the machining, and the machining shape is further sharpened.
[0014]
The laser processing apparatus according to the present invention includes a first laser that preheats a workpiece by irradiating the workpiece with laser light, and a second laser that processes the preheated workpiece by irradiating the workpiece with laser light. The second laser is a femtosecond pulse laser. In the present invention, since the workpiece is preheated with the first laser beam and then processed with the femtosecond pulse laser, the processing with the femtosecond pulse laser beam is appropriately performed, There is no residue, and thermal damage around the processing is suppressed, and a sharp processing shape is obtained. For this reason, high-precision fine processing is possible. In addition, since the preheating is performed by irradiating the first laser beam, the heating location can be limited to a desired location, and for example, the preheating can be limited only to a location where a residue is expected. Therefore, high-precision processing is possible from this point.
[0016]
In the laser processing apparatus according to the present invention, the first laser outputs a continuous laser beam.
In the laser processing apparatus according to the present invention, the first laser outputs pulsed laser light.
[0017]
In addition, the laser processing apparatus according to the present invention includes a control unit that drives the first laser and the second laser to irradiate the second laser while irradiating with the first laser.
In addition, the laser processing apparatus according to the present invention includes a control unit that drives the first laser and the second laser to perform irradiation with the first laser, and then performs irradiation with the second laser.
[0018]
The laser processing apparatus according to the present invention includes an optical system for irradiating the workpiece with the first laser and the second laser from the same direction.
The laser processing apparatus according to the present invention has an optical system for irradiating the workpiece with the first laser and the second laser from opposite directions.
In addition, the laser processing apparatus according to the present invention has an optical system for setting the focused spot diameter of the laser beam by the first laser to be smaller than the focused spot diameter by the second laser. Preliminary heating is mainly performed on a portion where the residue at the bottom of the machining is likely to generate a residue, and the thermal potential at that portion is increased, so that no residue is generated at the bottom of the machining, and the machining shape is further sharpened.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
Embodiment 1. FIG.
FIG. 1 is a block diagram showing a configuration of a laser processing apparatus according to Embodiment 1 of the present invention. This laser processing apparatus includes a YAG laser 10 and a titanium sapphire laser (femtosecond laser) 11, and the irradiation timing of these is controlled by a control device 12. The YAG laser 10 outputs a pulsed laser beam 10a having a wavelength λ1: 1064 nm and a pulse width Δt1: 10 ns. The titanium sapphire laser 11 outputs a femtosecond laser beam 11a having a wavelength λ2: 800 nm and a pulse width Δt2: 100 fs.
[0020]
The pulse laser beam 10 a from the YAG laser 10 is reflected by the beam splitter 15, then condensed by the condenser lens (focal length f100 mm) 16, and applied to the chromium film 21 formed on the quartz substrate 20. Irradiated. Further, the femtosecond laser beam 11a from the titanium sapphire laser 11 is reflected by the total reflection mirror 14, passes through the beam splitter 15, is condensed by the condenser lens 16, and is applied to the chromium film 21. The The quartz crystal substrate 20 is disposed on the XY table 30, and the chrome film 21 is processed into a desired shape by moving the XY table 30 corresponding to the processing shape. The total reflection mirror 14 reflects an 800 nm laser beam, and the beam beam splitter 15 is set so as to transmit a laser beam having a wavelength of 800 nm and reflect a laser beam having a wavelength of 1064 nm. .
[0021]
FIG. 2 is a timing chart showing the operation of the laser processing apparatus of FIG. When the control signal 12a is output from the control device 12, the YAG laser 10 outputs a pulse laser beam 10a having a pulse width (Δt1: 10 ns) substantially the same as the control signal 12a and irradiates the chromium film 21. When the control signal 12b is output from the control device 12 after the predetermined time, the titanium sapphire laser 11 outputs a femtosecond laser beam 11a having a pulse width Δt2: 100fs synchronized with the rising edge of the control signal 12. The chromium film 21 is irradiated at the same position as the above irradiation position.
[0022]
When the pulse laser beam 10a is irradiated, the temperature of the chromium film 21 gradually increases, and the thermal potential increases. However, the maximum temperature at this time does not exceed the melting temperature of the chromium film 21, and the irreversible change is not given to the chromium film 21. In such a state, the chromium film 21 having a high thermal potential is vaporized and ablation is performed by irradiating the femtosecond laser beam 11a. Note that the energy density of the femtosecond laser beam 11a at this time is set slightly larger than the processing threshold for the workpiece after preheating.
[0023]
Here, the operation | movement by irradiation of the femtosecond laser beam 11a is demonstrated. In general, the energy of laser light applied to the chromium film 21 is absorbed by electrons and then moves to the lattice system to raise the temperature of the chromium film 21. After that, the heat diffuses to the surroundings according to the thermal properties peculiar to chromium. However, since the pulse width of the femtosecond laser beam 11a is shorter than the energy transfer time from the electrons to the lattice system, the pulsed light does not diffuse outside the irradiation region during irradiation. For this reason, an irradiation area | region can be heated efficiently and suppression of the heat damage to the circumference | surroundings is attained.
[0024]
Further, the operation by irradiation with the femtosecond laser beam 11a will be described from another viewpoint. Since the pulse laser beam 10a is a laser beam having a low energy density, a one-photon absorption process is performed, and thermal diffusion is performed because the pulse width is long (time is long). Then, when the above-mentioned preheating is in a state where a multiphoton absorption process is likely to occur, when the femtosecond laser beam 11a is irradiated, the laser has a large energy density as a result of its short pulse width. When light is irradiated, a multiphoton absorption process occurs, and the energy exceeds the band gap and the molecules are separated. In this way, the ablation processing of the workpiece is performed not by thermal reaction but by light / chemical reaction, so that thermal damage to the processing periphery can be suppressed and high-precision fine processing is possible.
[0025]
FIG. 3 is a cross-sectional view of processing according to the above embodiment. As described above, since the pre-heating is performed by the pulse laser 10a and then the femtosecond laser beam 11a is irradiated for processing, no residue is generated on the processing bottom 22 as shown in FIG. The shape is sharp and free from thermal damage.
[0026]
Embodiment 2. FIG.
FIG. 4 is a block diagram showing a configuration of a laser processing apparatus according to Embodiment 2 of the present invention. This laser processing apparatus includes a YAG laser 10 and a titanium sapphire laser 11 as in the above embodiment, and the irradiation timing of these is controlled by the control device 12. The pulse laser beam 10a from the YAG laser 10 is condensed by the condenser lens 16 and irradiated onto the chromium film 2. Further, the femtosecond laser beam 11 a from the titanium sapphire laser (femtosecond laser) 11 is reflected by the total reflection mirrors 17 and 18, collected by the condenser lens 19, and applied to the chromium film 21 via the quartz substrate 20. Irradiated. In this way, the chromium film 21 is irradiated with the femtosecond laser beam 11a and the pulsed laser beam 10b from both the back side and the front side. Similar to the above-described embodiment, the chromium film 21 is preheated by irradiation with the pulsed laser beam 10a, and is subjected to ablation processing by irradiation with the femtosecond laser beam 11a. It is assumed that the total reflection mirrors 17 and 18 are set so as to reflect laser light having a wavelength of 800 nm.
[0027]
In the above embodiment, the pulse laser beam 10a is irradiated from the front side of the chromium film 21 and the femtosecond laser beam 11a is irradiated from the back side of the chromium film 21, but the reverse is also possible. That is, the femtosecond laser beam 11 a may be irradiated from the front side of the chromium film 21, and the pulse laser beam 10 a may be irradiated from the back side of the chromium film 21. In any case, when irradiating the chromium film 21 with the laser beam through the quartz substrate 20, it is necessary to set the wavelength of the laser beam to a wavelength that allows easy transmission through the quartz substrate 20.
[0028]
Embodiment 3. FIG.
FIG. 5 is an explanatory diagram of the size of the focused spot of the laser light irradiated on the chromium film in the first and second embodiments. In the illustrated example, the focused spot 10b of the pulse laser beam 10a is made smaller than the focused spot 11b of the femtosecond laser beam 11a, and the thermal potential mainly at the position corresponding to the processing bottom 22 is increased. Thus, no residue is left when the femtosecond laser beam 11a is irradiated. In addition, a sharp machined shape can be obtained without increasing the thermal potential around the machined part.
[0029]
The example of FIG. 5 is a typical example. In addition, the focused spot 10b = the focused spot 11b or the focused spot 10b> the focused spot 11b of the femtosecond laser beam 11a may be used. . For adjusting the diameter of the focused spot, for example, a beam expander is incorporated in the YAG laser 10 or the titanium sapphire laser 11 to adjust the beam diameter, or the beam spot is emitted from the YAG laser 10 or the titanium sapphire laser 11. The beam diameter is adjusted by inserting a beam expander into the optical system of the laser beam.
[0030]
Embodiment 4 FIG.
Further, the laser beam for preheating the workpiece does not necessarily need to be a pulsed laser beam and may be a continuous beam. The light source is not limited to the YAG laser, and other solid-state lasers, gas lasers (for example, CO 2 lasers), or semiconductor lasers may be used. Further, the laser for processing the workpiece is not limited to the titanium sapphire laser, and may be another laser. Moreover, although the example ((lambda) 1> (lambda) 2) in which the wavelength was different between said YAG laser 10 and titanium sapphire laser 11 was shown, the wavelength may be the same. In addition, since the ultrashort pulse laser according to the present invention is only required to suppress thermal damage, the pulse width is a pulse laser having a pulse width in a femtosecond region to a picosecond region (10 −15 seconds −10 −12 seconds). Is applicable.
[0031]
In addition, the workpiece is not limited to the above-described chromium film, and the heat diffusion region is limited even in a material having high thermal conductivity such as alumina, silicon, germanium, quartz, etc., so that precise processing can be performed. . Furthermore, the processing of the present invention can also be applied to laser ablation of a living body such as the cornea, teeth, and brain.
[Brief description of the drawings]
FIG. 1 is a block diagram showing a configuration of a laser processing apparatus according to Embodiment 1 of the present invention.
FIG. 2 is a timing chart showing the operation of the laser processing apparatus of FIG.
FIG. 3 is a cross-sectional view of machining according to the present embodiment.
FIG. 4 is a block diagram showing a configuration of a laser processing apparatus according to Embodiment 2 of the present invention.
FIG. 5 is an explanatory diagram of the size of a focused spot of laser light applied to a chromium film.
FIG. 6 is a cross-sectional view of processing reported in the prior art.
7 is a processing cross-sectional view when a laser beam having a wider pulse width than that of the example of FIG. 6 is irradiated. FIG.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 YAG laser 11 Titanium sapphire laser 14,17,18 Reflection mirror 15 Beam splitter 16,19 Condensing lens 20 Crystal substrate 21 Chrome film 30 XY table

Claims (18)

第１のレーザ光を照射して被加工物を予備加熱する工程と、第２のレーザ光を照射して予備加熱された被加工物を加工する工程とを有し、前記第２のレーザ光はフェムト秒レーザ光であることを特徴とするレーザ加工方法。  A step of pre-heating the workpiece by irradiating the first laser beam, and a step of processing the pre-heated workpiece by irradiating the second laser beam, the second laser beam Is a femtosecond laser beam. 前記第１のレーザ光は連続したレーザ光であることを特徴とする請求項１記載のレーザ加工方法。  The laser processing method according to claim 1, wherein the first laser beam is a continuous laser beam. 前記第１のレーザ光はパルスレーザ光であることを特徴とする請求項１記載のレーザ加工方法。  The laser processing method according to claim 1, wherein the first laser beam is a pulsed laser beam. 前記予備加熱による被加工物に対する加熱は被加工物の溶融温度を超えないことを特徴とする請求項１〜３の何れかに記載のレーザ加工方法。  The laser processing method according to claim 1, wherein the heating of the workpiece by the preliminary heating does not exceed a melting temperature of the workpiece. 前記第１のレーザ光を照射している間に前記第２のレーザ光を照射することを特徴とする請求項１〜４の何れかに記載のレーザ加工方法。  The laser processing method according to claim 1, wherein the second laser beam is irradiated while the first laser beam is irradiated. 前記第１のレーザ光を照射した後に、前記第２のレーザ光を照射することを特徴とする請求項１〜４の何れかに記載のレーザ加工方法。Wherein after irradiating the first laser light, the laser processing method according to any of claims 1-4, characterized by irradiating the second laser beam. 前記第１のレーザ光と前記第２のレーザ光とを、被加工物に対して同じ方向から照射することを特徴とする請求項１〜６の何れかに記載のレーザ加工方法。 The laser processing method according to claim 1, wherein the first laser beam and the second laser beam are irradiated to the workpiece from the same direction. 前記第１のレーザ光と前記第２のレーザ光とを、被加工物に対して反対方向から照射することを特徴とする請求項１〜６の何れかに記載のレーザ加工方法。  The laser processing method according to claim 1, wherein the first laser beam and the second laser beam are irradiated to the workpiece from opposite directions. 前記第１のレーザ光により一光子吸収過程よる予備加熱を行い、前記第２のレーザ光により多光子吸収過程よる加工を行うことを特徴とする請求項１〜８の何れかに記載のレーザ加工方法。  The laser processing according to any one of claims 1 to 8, wherein preheating by a one-photon absorption process is performed by the first laser light, and processing by a multiphoton absorption process is performed by the second laser light. Method. 前記第１のレーザ光の集光スポット径を前記第２のレーザ光による集光スポット径よりも小さく設定したことを特徴とする請求項１〜９の何れかに記載のレーザ加工方法。  The laser processing method according to claim 1, wherein a focused spot diameter of the first laser beam is set smaller than a focused spot diameter of the second laser beam. 被加工物にレーザ光を照射して予備加熱する第１のレーザと、被加工物にレーザ光を照射して予備加熱された被加工物を加工する第２のレーザとを有し、前記第２のレーザはフェムト秒レーザであることを特徴とするレーザ加工装置。  A first laser for preheating by irradiating the workpiece with laser light, and a second laser for processing the preheated workpiece by irradiating the workpiece with laser light; 2. A laser processing apparatus, wherein the laser 2 is a femtosecond laser. 前記第１のレーザは連続したレーザ光を出力するものであることを特徴とする請求項１１記載のレーザ加工装置。  The laser processing apparatus according to claim 11, wherein the first laser outputs a continuous laser beam. 前記第１のレーザはパルスレーザ光を出力するものであることを特徴とする請求項１１記載のレーザ加工装置。  The laser processing apparatus according to claim 11, wherein the first laser outputs pulsed laser light. 前記第１のレーザ及び前記第２のレーザを駆動して、前記第１のレーザによる照射をしている間に前記第２のレーザを照射させる制御手段を有することを特徴とする請求項１１〜１３の何れかに記載のレーザ加工装置。  11. A control means for driving the first laser and the second laser to irradiate the second laser while irradiating with the first laser. The laser processing apparatus according to any one of 13. 前記第１のレーザ及び前記第２のレーザを駆動して、前記第１のレーザにより照射を行った後に、前記第２のレーザによる照射を行わせる制御手段を有することを特徴とする請求項１１〜１３の何れかに記載のレーザ加工装置。  12. The control device for driving the first laser and the second laser and performing irradiation with the second laser after performing irradiation with the first laser. The laser processing apparatus in any one of -13. 前記第１のレーザと前記第２のレーザとを、被加工物に対して同じ方向から照射するための光学系を有することを特徴とする請求項１１〜１５の何れかに記載のレーザ加工装置。  The laser processing apparatus according to any one of claims 11 to 15, further comprising an optical system for irradiating the workpiece with the first laser and the second laser from the same direction. . 前記第１のレーザと前記第２のレーザとを、被加工物に対して反対方向から照射するための光学系を有することを特徴とする請求項１１〜１５の何れかに記載のレーザ加工装置。  16. The laser processing apparatus according to claim 11, further comprising an optical system for irradiating the workpiece with the first laser and the second laser from opposite directions. . 前記第１のレーザによるレーザ光の集光スポット径を第２のレーザによる集光スポット径よりも小さく設定するための光学系を有することを特徴とする請求項１１〜１７の何れかに記載のレーザ加工装置。  The optical system for setting the condensing spot diameter of the laser beam by the first laser to be smaller than the condensing spot diameter by the second laser, according to claim 11. Laser processing equipment.
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