TWI549191B - Managing thermal budget in annealing of substrates - Google Patents

Description

Manage the thermal budget of substrate annealing

Embodiments of the invention relate to methods of fabricating semiconductor components. More specifically, embodiments of the present invention are directed to a method of heat treating a substrate.

The integrated circuit (IC) market continues to demand larger memory capacities, faster switching speeds, and smaller feature sizes. One of the major steps in the industry to address these needs is to change the batch of wafers processed in a large furnace to a single wafer in a small chamber.

During this single wafer process, the wafer is typically heated to a high temperature such that various chemical and physical reactions can occur in multiple IC components defined in the wafer. Of particular concern is that the advantageous electrical performance of the IC component requires annealing of the implanted region. Annealing regenerates a previously fabricated amorphous wafer region into a crystalline structure and activates the dopant by incorporating atoms of the dopant into the crystalline lattice of the substrate or wafer. A thermal process such as annealing requires a relatively large amount of thermal energy to be provided to the wafer in a short period of time and then the wafer is rapidly cooled to terminate the thermal process. Examples of currently used thermal processes include rapid thermal processing (RTP) and pulsed (spike) annealing. Although these processes are widely used, current technologies are not suitable for large substrates that tend to be exposed to high temperatures for extended periods of time. ideal. These problems become more severe as the switching speed increases and/or the size of the feature structure decreases.

In general, the thermal processes are based on a predetermined thermal process, The substrate is heated under controlled conditions. The thermal fabrication methods consist essentially of the temperature at which the semiconductor substrate must be heated, the rate of change of temperature (i.e., the rate of temperature rise and rate of decrease), and the time at which the heat treatment system is maintained at a particular temperature. For example, some thermal fabrication methods may require the entire substrate to be heated from room temperature to a temperature above 400 ° C or above, above the processing time of the thermal budget of the components formed on the substrate.

In addition, for certain purposes, such as materials in semiconductor substrates The minimum interdiffusion between different regions, the amount of time each semiconductor substrate is subjected to high temperatures must be limited. To achieve this, the rate of change in temperature (rise and fall) is preferably high. In other words, it is desirable to adjust the temperature of the substrate from a low temperature to a high temperature in the shortest possible time, or vice versa.

The requirement for rate of change in high temperature results in rapid thermal processing (RTP) In development, the typical rate of temperature rise of rapid thermal processing varies from 200 to 400 ° C/s compared to 5-15 ° C/min of conventional furnaces. Typical rate of decline is in the range of 80-150 ° C / s. A disadvantage of RTP is that even if the IC component resides only a few microns above the top of the germanium wafer, the RTP heats the entire wafer. This disadvantage limits the speed with which the heat treatment can heat and cool the wafer. Furthermore, once the entire wafer is at a high temperature, heat can only be dissipated into the surrounding space or structure. Therefore, the current state of the art of RTP systems is to achieve an ascending rate of 400 ° C / s and a rate of decline of 150 ° C / s.

As the size of the components on the substrate becomes smaller in the future, the thermal budget is also It must be reduced because smaller components may be more susceptible to degradation due to material diffusion. The rate of temperature rise and fall must be increased to compressive annealing time, for example less than 1 second.

In order to solve some problems in the conventional RTP type process, various Scanning laser annealing techniques have been used to anneal the surface of the substrate. In general, these techniques transfer a constant energy flux to a small area on the surface of the substrate while translating or scanning the substrate relative to the energy delivered to the small area. Other laser scanning processes keep the substrate stationary and move the laser across the surface of the substrate. These types of processes heat treat the contact level devices formed on the surface of the substrate due to the strict uniformity requirements and the complexity of minimizing the overlap of the scanned regions across the surface of the substrate. Not effective. Additionally, thermal stresses in the substrate resulting from high thermal gradients associated with extreme regionalized heating can cause damage to the substrate.

In view of the above, the semiconductor is annealed at a high rate of rise and fall. There is a need for novel devices and methods for substrates. This provides greater control over the manufacture of smaller components that produce increased performance.

Embodiments of the invention generally provide a method of treating a substrate. One aspect of the present invention provides a method of processing a substrate comprising positioning the substrate on a movable substrate support, directing a first amount of heating energy to a portion of the substrate a fixed position, directing a second amount of heating energy to a second fixed position of a portion of the substrate, moving the substrate support to continuously position each selected region in the first fixed position and Positioning at the second fixed location to process the selected area of the substrate, And maintaining a portion of the substrate at a temperature below 500 °C.

Other embodiments provide a method of processing a substrate, including Positioning the substrate on a fixed substrate support, directing heating energy to the substrate to form at least one hot zone and at least one annealing zone on the surface of the substrate, and moving the heating energy to thereby select each selected region A selected area of the substrate is processed continuously positioned in the hot zone and subsequently positioned in the annealing zone.

Other embodiments provide an apparatus for heat treating a substrate, the package a movable substrate support; a first source of energy oriented to direct annealing energy to a first portion of one of the surfaces of the substrate support; a second source of energy oriented to preheat energy a second portion of the surface that is directed to the substrate support; and an optical component that houses the first source of energy and the second source of energy.

Other embodiments provide an apparatus for heat treating a substrate, the package Having a fixed substrate support; one or more sources of energy oriented to direct annealing energy to a first portion of one of the surfaces of the substrate support and directing preheating energy to the surface of the substrate support a second portion; an optical assembly that houses the one or more sources of energy; and an actuator for moving the annealing energy and the preheating energy relative to the fixed substrate support.

100‧‧‧ Equipment

102‧‧‧Energy source

102A‧‧‧ emitter

102B‧‧‧ emitter

102C‧‧‧Emitter

102D‧‧‧ emitter

102E‧‧‧ emitter

104‧‧‧ Annealed area

106‧‧‧Substrate

108‧‧‧Working surface

110‧‧‧Electric actuator

112‧‧‧Preheating area

114‧‧‧cut or cut line

200‧‧‧ equipment

202‧‧‧Energy source

202A‧‧‧ emitter

204‧‧‧Substrate

206‧‧‧Work surface

208‧‧‧ Annealing section

210‧‧‧Preheating section

302‧‧‧First District

302B‧‧‧First District

302C‧‧‧First District

304‧‧‧Second District

304B‧‧‧Second District

304C‧‧‧Second District

306‧‧‧ Third District

306B‧‧‧ Third District

306C‧‧‧ Third District

400‧‧‧ equipment

402‧‧‧First energy source

404‧‧‧second source of energy

406‧‧‧ first surface

408‧‧‧ second surface

410‧‧‧Substrate

412‧‧‧First District

414‧‧‧Processing chamber

502‧‧‧ treatment volume

504‧‧‧ chamber body

506‧‧‧Optical transparent window

508‧‧‧Substrate support

510‧‧‧vacuum pump

512‧‧‧Inert gas source

514‧‧‧Substrate

516‧‧‧ top surface

518‧‧‧Energy source

520‧‧‧ Annealing energy

522‧‧‧Preheating energy

524‧‧‧temperature control unit

526‧‧‧High precision stage

528‧‧‧ optical sensor

530‧‧‧Control unit

600‧‧‧Substrate

602‧‧‧ grain

604‧‧‧ cutting line

606‧‧‧Unused area

608‧‧‧First energy projection area

610‧‧‧second energy projection area

612‧‧‧ Curve

700‧‧‧ Equipment

702‧‧‧室

704‧‧‧Substrate

706‧‧‧Substrate support

708‧‧‧ lower part

710‧‧‧ upper part

712‧‧‧Processing volume

712A‧‧‧Processing volume

712B‧‧‧ processing volume

714‧‧‧ openings

716‧‧‧ gas inlet

718‧‧‧Process gas source

720‧‧‧ first window

722‧‧‧First energy source

724‧‧‧First energy

726‧‧‧上壁

728‧‧‧ lower chamber wall

730‧‧‧ gas export

732‧‧‧ pump

734‧‧‧second source of energy

736‧‧‧Light source

738‧‧‧second energy

740‧‧‧Second window

742‧‧‧Power supply

744‧‧‧Switch box

746‧‧‧Preheating zone

748‧‧‧annealing area

750‧‧‧ actuator

752‧‧‧ Controller

754‧‧‧ surrounding area

756‧‧‧lifting pin

758‧‧‧Actuator

760‧‧‧ tube

800‧‧‧ ambient temperature range

802‧‧‧First warm-up interval

804‧‧‧second warm-up interval

806‧‧‧ Annealing interval

808‧‧‧First cooling and cooling interval

810‧‧‧Second cooling and cooling interval

812‧‧‧Second surrounding interval

850‧‧‧ surrounding area

852‧‧‧First warm-up interval

854‧‧‧second warm-up interval

856‧‧‧annealing interval

858‧‧‧First cooling and cooling interval

860‧‧‧second cooling and cooling interval

862‧‧‧Second surrounding interval

900‧‧‧ method

910‧‧ steps

920‧‧‧Steps

930‧‧‧Steps

1000‧‧‧ method

1010‧‧‧Steps

1020‧‧‧Steps

1030‧‧‧Steps

1040‧‧‧Steps

1100‧‧‧ method

1102‧‧‧Steps

1104‧‧‧Steps

1106‧‧‧Steps

1108‧‧‧Steps

1110‧‧‧Steps

1112‧‧‧Steps

Therefore, the above-described features of the present invention can be understood in detail, and a more detailed description of the present invention may be made by reference to the embodiments. It is to be understood, however, that the appended drawings are in FIG

1A is a diagrammatic isometric view of a device in accordance with an embodiment of the present invention.

Figure 1B is a diagrammatic bottom view of one embodiment of the energy source of Figure 1A.

Figure 2 is a diagrammatic isometric view of a device in accordance with another embodiment of the present invention.

Figure 3A is a graph of temperature relative position on a substrate undergoing a process in accordance with an embodiment of the present invention.

3B-3C is a diagrammatic top view of a substrate undergoing a process in accordance with two embodiments of the present invention.

Figure 4 is a diagrammatic side view of an apparatus in accordance with an embodiment of the present invention.

Figure 5 is a diagrammatic cross-sectional view illustrating a processing chamber in accordance with an embodiment of the present invention.

Figure 6 is a diagrammatic top plan view of a substrate undergoing a process in accordance with an embodiment of the present invention.

Figure 7 is a diagrammatic cross-sectional view illustrating a processing chamber in accordance with an embodiment of the present invention.

8A-8B are graphs of temperature versus time on a substrate undergoing a process in accordance with an embodiment of the present invention.

Figure 9 is a flow chart summarizing a method in accordance with an embodiment of the present invention.

Figure 10 is a flow chart summarizing a method in accordance with another embodiment of the present invention.

Figure 11 is a flow chart summarizing a method in accordance with another embodiment of the present invention.

For ease of understanding, the same component symbols have been used where possible to indicate the same devices that are common to the drawings. It is contemplated that the devices disclosed in one embodiment may be beneficially utilized in other embodiments, unless otherwise specified.

As the size of the components on the substrate becomes smaller and as the substrate itself becomes larger, it becomes increasingly impractical to perform heat treatment on the entire substrate at one time. The power required to energize the entire surface becomes prohibitive and may result in non-uniform processing. Thus, heat treatment tools such as RTP chambers are sometimes configured to take turns processing portions of the substrate surface. An exemplary heat treatment apparatus (such as available from California, Santa Clara of Applied Materials, Inc. Of DSA ^® chamber) may be used in small part of the surface of the laser light irradiating the substrate surface by the annealing. At the edge of the laser beam, the surface of the substrate can be heated at an extreme rate, and the temperature gradient between the irradiated portion and the untreated portion can cause destructive thermal stresses inside the substrate. For this reason, the substrate is typically placed on a heated chuck to maintain the entire substrate at a high ambient temperature to reduce the stress generated by heating to the annealing temperature. However, maintaining the substrate at elevated temperatures often reduces the benefits of heat treatment. Embodiments of the invention generally encompass an improved manner of heat treating a substrate.

In general, the term "substrate" as used herein may refer to an article formed from any material having a certain natural electrical conductivity or a material that can be modified to provide electrical conductivity. Typical substrate materials include, but are not limited to, semiconductors such as germanium (Si) and germanium (Ge); and other manifestations of semiconducting properties Compound. The semiconducting compounds generally include compounds of Groups III-V and II-VI. Representative Group III-V semiconductor compounds include, but are not limited to, gallium arsenide (GaAs), gallium phosphide (GaP), and gallium nitride (GaN). Generally, the term "semiconductor substrate" includes a bulk semiconductor substrate and a substrate having a deposited layer disposed thereon. To this end, the deposited layers in some of the semiconductor substrates processed by the method of the present invention are formed by homogenous epitaxy (eg, ruthenium iridium) or hetero-epitaxial (eg, gallium arsenide (GaAs)). . For example, the method of the present invention can be used with gallium arsenide and gallium nitride substrates formed by hetero-epitaxial methods. Similarly, the method of the present invention can also be used to form integrated components (such as thin film transistors (TFTs)) on a relatively thin crystalline germanium layer formed on an insulating substrate (e.g., a germanium-on-insulator [SOI] substrate).

Some embodiments of the invention provide methods of heat treating a substrate. 1A The Figure is a diagrammatic isometric view of an apparatus 100 in accordance with an embodiment of the present invention. Feature 1A is characterized by an energy source 102 that is adapted to project a quantity of energy onto a defined area or anneal area 104 of substrate 106 disposed on working surface 108. The amount of energy projected onto the anneal region 104 is selected to cause annealing of the surface of the substrate 106. In some embodiments, the energy delivered by the energy source is less than the energy required to melt a portion of the substrate 106. In other embodiments, the delivered energy is selected to cause preferential melting of portions of the substrate 106.

In some embodiments, the energy source 102 comprises as illustrated in FIG. 1B The plurality of emitters, wherein the emitters 102A-102E are shown, are embedded in the energy source 102. Emitters 102A-102E typically emit radiation directed onto substrate 106. In some embodiments, the emitters of the emitters 102A-102E are emitted Shoot the same amount of energy. In other embodiments, the emitters 102A-102E may emit different amounts of energy. In an exemplary embodiment, emitter 102A can emit a certain amount of energy selected to anneal annealing region 104 of substrate 106, while emitters 102B-102E emit one or more to preheat substrate 106. A portion of the energy of the portion that is adjacent to the annealing region 104, adjacent to or overlapping the annealing region 104.

In an example, as shown in Figure 1A, at any given time, Only one defined region of the substrate, such as the anneal region 104, is exposed to radiation from the energy source 102. In one aspect of the invention, multiple regions of the substrate 106 are continuously exposed to the desired amount of energy delivered from the energy source 102, thereby causing preferential melting of the desired regions of the substrate. In another aspect, multiple regions of substrate 106 are continuously exposed to a quantity of energy from energy source 102 that is selected to anneal the desired area of the substrate without melting.

In general, the area on the surface of the substrate can be continuously exposed, which is The substrate is translated and/or translated relative to the substrate by an output relative to a source of electromagnetic radiation (eg, a conventional X/Y stage, a precision stage). Generally, one or more conventional electric actuators 110 (eg, linear DC servo motors, lead screws, and servo motors) are used to control the movement and position of the substrate 106, and the conventional electric actuators may It is part of an independent precision stage (not shown). A conventional precision stage that can be used to support and position the substrate 106 is commercially available from Parker Hannifin Corporation of Rohnert Park, California.

In other embodiments, the electromagnetic radiation can be translated relative to the substrate source. For example, in the embodiment of FIG. 1A, the energy source 102 can be coupled to a positioning device (not shown) such as a Cartesian frame. It is adapted to position the energy source 102 above a desired area of the substrate 106. The positioning device can additionally be configured to adjust the energy from the elevation above the substrate 106.

Referring again to Figure 1A, the preheating zone 112 is defined on the substrate 106. On the surface. In some embodiments, the preheat zone 112 surrounds the anneal zone 104. In other embodiments, the preheating region may be adjacent to the annealing region 104 or may overlap the annealing region 104. In other embodiments, the preheating zone 112 can be adjacent the annealing zone 104 with a gap or space between the preheating zone 112 and the annealing zone 104. In some embodiments, the preheating zone can be spaced apart from the annealing zone. The preheating zone can thus have any suitable shape, such as the circular preheating zone 112 shown in the embodiment of Figure 1A.

2 is a diagram of an apparatus 200 in accordance with another embodiment of the present invention. Solve the isometric view. Energy source 202 is configured to direct energy to substrate 204 disposed on working surface 206. In some embodiments, energy source 202 includes a plurality of emitters 202A that emit electromagnetic energy having characteristics selected to heat treat the surface of substrate 204. At least one of the emitters 202A can be adapted to anneal the annealed portion 208 of the substrate 204, while at least one of the emitters 202A is adapted to preheat the preheated portion 210 of the substrate 204. In the embodiment of Figure 2, the preheated portion 210 is shown adjacent to the annealed portion 208. Other embodiments may be characterized by a preheating portion 210 that overlaps or is spaced apart from the annealed portion 208.

Figure 3A is a diagram showing the effect of an embodiment of the present invention on a substrate. Generalized chart. As shown in Figure 3A, portions of the substrate in different zones are maintained at different temperatures. Figure 3A is a diagram schematically showing the point on the surface of the substrate The temperature after the annealing process is arranged on the line drawn through the processing zone. The first zone 302 can be maintained at a high temperature selected to anneal the surface of the substrate. This region may correspond to the annealed region 104 of Figure 1A, the annealed region 204 of Figure 2, or any region of the substrate that is heated to a high temperature.

The embodiment of Figure 3A is characterized in that the second zone 304 is typically maintained at At different temperatures, in the example of Figure 3A, the different temperatures are lower. In some embodiments, the second zone 304 can surround the first zone 302. In other embodiments, the second zone 304 can be adjacent to the first zone 302, can overlap the first zone 302, or can be spaced apart from the first zone 302. The temperature of the second zone 304 is generally lower than the temperature of the first zone 302. The temperature of the second zone 304 can be selected to preheat the portion of the substrate to reduce thermal stress on the substrate due to extremely sudden temperature changes.

The third zone 306 is also typically defined on the substrate. In most embodiments The third zone 306 is the zone where the ambient temperature predominates. The third zone 306 can thus be a surrounding zone in many embodiments. In some embodiments, however, the third zone 306 can also receive thermal energy applied by, for example, heating with or around the heated support. The temperature of the third zone 306 is typically less than the temperature of the second zone 304, which follows the concept of approaching the first zone 302 with progressive warm-up. In some embodiments, the third zone 306 can surround the second zone 304, or in other embodiments, can abut the second zone. In some embodiments, the temperature of the third zone is maintained below about 500 °C.

The second zone 304 can have a first zone 302 and a third zone 306 The temperature between the temperatures. To achieve the desired warm-up, the temperature of the second zone 304 can achieve a temperature increase between about 30% and about 70% of the range of temperature rises from the temperature of the third zone 306 to the temperature of the first zone 302. In some embodiments, The temperature increase of the second zone 304 relative to the third zone 306 is about 50% of the increase in temperature of the first zone 302 relative to the third zone 306.

In some embodiments, the temperature of the first zone 302 can be between about 1,100 ° C and about 1,400 ° C, such as between about 1,250 ° C and about 1,350 ° C. In some embodiments, the temperature difference between the first zone 302 and the ambient temperature is between about 90% and about 99%, such as about 95%, of the temperature difference between the melting point of the substrate and the ambient temperature. In some embodiments, the temperature of the second zone 304 can be between about 300 ° C and about 800 ° C. The temperature of the second zone 304 is typically selected to reduce thermal stress at the boundary between the first zone 302 and the second zone 304, but this temperature is also typically lower than the temperature level of the amorphous portion of the substrate. The temperature of the second zone 304 is typically selected to preheat the portion of the substrate to be annealed while cooling the annealed portion. The temperature of the second zone 304 is generally lower than the temperature required to cause the atoms to leave the crystal lattice. In an exemplary embodiment where the feature is a germanium-containing substrate, the temperature of the first zone 302 can be about 1,350 ° C, the temperature of the second zone 304 is about 650 ° C, and the temperature of the third zone 306 is about 20 ° C. Or another ambient temperature.

3B and 3C are schematic views of substrates each having a plurality of processing zones defined thereon. The treatment zone represents the area of the substrate that is being heated by electromagnetic radiation. The embodiment of Figure 3B has a first zone 302B surrounded by a second zone 304B and a third zone 306B. It should be noted that the zones may have similar or different shapes. The embodiment of Fig. 3B is characterized by a rectangular first zone 302B and a circular second zone 304B and a circular third zone 306B. All three zones of an alternate embodiment may have a circular shape. The embodiment of Figure 3C features a rectangular first zone 302C and a rectangular or square second zone 304C adjacent to the first zone 302C on one side, all surrounded by a third zone 306C (which is a surrounding zone). It should also be noted that The second zone can be maintained at a single temperature at all times, or portions of the second zone can be maintained at different temperatures. For example, the second zone 304B of the embodiment of FIG. 3B can be always a single temperature, while portions of the second zone 304C of the embodiment of FIG. 3C can be at different temperatures. If one portion of the second region 304C is to be used as the preheating zone and the other portion is to serve as the cooling and cooling zone, the preheating portion can be maintained at a temperature higher than the cooling and cooling portion. It should be noted that a substrate having any reasonable shape, such as a circular, rectangular or any other planar shape, would benefit from embodiments of the invention described herein.

In some embodiments, there may be more between the surrounding area and the annealing zone. A zone with a high temperature. Some embodiments may be characterized by a plurality of preheat zones and a single annealing zone. Some embodiments may be characterized by a first plurality of preheating zones and a second plurality of cooling and cooling zones. In some embodiments, one zone may surround an area having the next higher temperature such that each zone surrounds another zone and is surrounded by another zone. Such embodiments may have regions of a nested toroid (i.e., non-concentric circles) that are approximately concentric in shape or centered at different points. In some embodiments, regions having many different shapes may be suitable, such as various different polygonal shapes, such as triangles, rectangles, squares, trapezoids, hexagons, and the like. Of course, different shapes can be used for different zones. In other embodiments, a zone may be adjacent on one side to the zone having the next higher temperature and on the other side to the zone having the next lower temperature. In other embodiments, some zones may be adjacent to other zones, and some zones may surround other zones. For example, the first zone can be defined as an annealing zone, and the adjacent second zone on the first side of the first zone is for preheating and the adjacent second zone on the second side of the first zone is for cooling Cooling down while the first and second zones are surrounded by a third zone that is maintained above ambient At the temperature of the temperature, and the fourth zone surrounds all other zones maintained at ambient temperature.

In an exemplary embodiment, the rectangular annealing zone may be one or more pre- Surrounding the hot zone, the preheating zone is shaped like a rectangle with a triangle on the opposite side. Such a wedge shape facilitates heating and cooling the surface of the substrate in a desired manner. In another exemplary embodiment, the annealing zone, which may be rectangular or circular, may be surrounded by one or more preheat zones having a teardrop shape. The rounded portion of the teardrop shape may be a preheating zone, and the "tail" of the teardrop may be a cooling and cooling zone.

In some embodiments, one or more of the preheating or cooling cooling zones may Separated from the annealing zone, and there is a gap between the annealing zone and the preheating and/or cooling cooling zone. For example, four zones may be defined on the surface of the substrate to be annealed, which are the surrounding zone, the preheating zone, the annealing zone, and the cooling and cooling zone. The annealing zone may be rectangular having two long sides measuring 11 mm and two short sides measuring 100 μm. The preheating zone may be an isosceles triangle having a bottom edge measuring 13 mm and a height of 5 mm, the bottom edge being parallel to the long side of the annealing zone and spaced apart from the long side of the annealing zone by about 1 mm, and centered relative to the annealing zone so that The line that equally divides the isosceles triangle also divides the annealing zone into two rectangles of 5.5 mm in length and 100 μm in width. The cooling and cooling zone can also be an isosceles triangle similar to the preheating zone. If the annealing zone temperature is 1,200 ° C, the temperature of the preheating zone may be between about 600 ° C and about 700 ° C such that the temperature of the surface of the substrate slightly decreases as it passes through the gap between the preheating zone and the annealing zone. For example, the temperature of the surface of the substrate can be lowered to about 500 ° C before being passed to the annealing zone. Such a preheat profile can be applied to minimize the disturbance of atoms deep into the substrate block while preheating the surface. Extending the length of the bottom edge of the isosceles triangle forming the preheating zone provides for the surface of the substrate adjacent to the short side of the annealing zone Heating of the area to prevent destructive thermal stress on the substrate. A similar cooling and cooling zone positioned adjacent the long side of the annealing zone opposite the preheating zone can be adapted to accelerate cooling while avoiding destructive thermal stress.

Some embodiments may be characterized by a plurality of annealing zones and having different a plurality of zones of temperature. Depending on the needs of the individual embodiments, each annealing zone can be maintained at the same temperature or maintained at a different temperature. In such embodiments, the preheating zone may be defined between the annealing zones, in the annealing zone, around the annealing zone, adjacent to the annealing zone, around the annealing zone, or spaced apart from the annealing zone. For example, in one embodiment, the four portions of the substrate can be processed by a device that defines a plurality of processing zones in each portion. Thus, each portion can have an annealing zone surrounded by a preheating zone and further by a surrounding zone that translates across the sections simultaneously to treat the substrate. In this embodiment, the zones can be shaped and configured in any manner other than that described elsewhere herein, and the location of the heated zone within each section can be maintained at a preselected distance from the heated zone within the other sections, In order to manage the total thermal budget of the substrate.

In some embodiments, the preheating zone or the preheating and cooling down zone may Formed in a convenient way. Embodiments in which the preheating and cooling cooling zones are both rectangular and disposed on both sides of the annealing zone have been described, as depicted in the embodiment of Figure 3C. In other embodiments, the shape of the preheating and cooling cooling zones may be tapered from the annealing zone. In embodiments where the preheating and cooling cooling zones do not surround the annealing zone, the preheating and cooling cooling zones are typically coextensive with at least one dimension of the annealing zone. In some embodiments, the preheat and cool down zones may become narrower as they exit the annealing zone. In some embodiments, the preheat and cool down zones may have a triangular, trapezoidal, parabolic, elliptical, oval or irregular shape. In other implementations In an example, the preheating and cooling cooling zones may have a shape in which a rectangle is coupled to a semicircular shape. The shape may be hybrid, i.e., the preheating zone has a shape and the cooling and cooling zone has another shape. In embodiments where the preheating and cooling cooling zones surround the annealing zone to form a single intermediate temperature zone, a single intermediate temperature zone may also be formed. In some embodiments, the intermediate temperature zone surrounding the annealing zone can have an elliptical, oval or diamond shape. In other embodiments, the rectangular region can surround the annealing region. In other embodiments, the intermediate temperature zone may have an irregular or compound regular shape, such as a pair of contiguous trapezoids.

In an embodiment, the intermediate temperature zone can have a substantially oval shape The shape is irregularly placed relative to the annealing zone. In this embodiment, the center of the annealing zone is displaced away from the center of the intermediate temperature zone. Therefore, the plurality of line segments drawn from the starting point on the edge of the intermediate temperature zone to the end point on the edge of the annealing zone (each segment is perpendicular to the edge of the intermediate temperature zone at its respective starting point) has a maximum The length of the change from the value to the minimum value. Maintaining a large distance between the edge of the annealing zone and the edge of the intermediate temperature zone in the direction of the annealing path is advantageous to apply sufficient preheat energy to prevent damage to the substrate as the annealing energy moves across the surface of the substrate, And enough energy is applied to the cooling and cooling zone to facilitate rapid cooling after annealing is completed without damage. In this embodiment, the temperature versus time plot for a particular point on the surface of the substrate can have the shape of a half drop of teardrops.

Figure 4 is a diagrammatic side view of an apparatus 400 in accordance with another embodiment of the present invention. The first energy source 402 and the second energy source 404 are positioned to direct energy to the first surface 406 and the second surface 408 of the substrate 410, respectively. The first energy source 402 directs energy to the first region 412 of the substrate 410. The second energy source 404 directs energy to the second region 414 of the substrate 410. In most embodiments, the first zone 412 is smaller than the second zone 414, and the boundary of the second zone 414 extends over the boundaries of the first zone 412 on all sides. In most embodiments, the first energy source 402 directs electromagnetic energy to the substrate 410, irradiating the first region 412 with energy selected to heat the first region 412 to the annealing temperature, and the second energy source 404 The second zone 414 is selected to illuminate the second zone 414 to an intermediate temperature. Heating the second zone 414 to an intermediate temperature is used to preheat the portion of the substrate to be annealed to avoid severe thermal stresses due to sudden temperature changes at the edges of the first zone 412. In general, an energy source intended to anneal a substrate transfers a power density of at least 1 W/cm ² to the surface of the substrate, while an energy source intended only to heat the substrate will deliver a power density of at least 0.1 W/cm ² to the base. The surface of the material is less than the power density required for annealing.

In one aspect, the size of the annealed area is adjusted to match the surface of the substrate The size of the individual grains formed thereon (for example, 40 "grains" in Fig. 1A) or semiconductor elements (for example, memory chips). Referring again to FIG. 1A, in one aspect, the boundaries of the anneal regions 104 are aligned and sized to fit the "cut" or "cut" lines 114 that define the boundaries of the respective dies. In one embodiment, prior to performing the annealing process, the substrate is aligned to the output of the energy source 102 using alignment marks and other conventional techniques commonly found on the surface of the substrate such that the annealing region 104 is sufficiently aligned with the die. . The anneal zone 104 is continuously placed such that it overlaps only in the naturally occurring unused space/boundary between the dies, such as the dicing lines or the kerf lines 114, reducing the overlap of energy in the regions on which the components are formed on the substrate, Thus, variations in process results between overlapping annealing regions are reduced. This technique has a habit of sweeping the surface of the substrate with laser energy. Knowing the advantages of the process, because the need to tightly control the overlap between adjacent scan regions to ensure uniform annealing across the desired region of the substrate is no longer an issue, due to the limitation of overlap between the grains. Use space. The conventional scan-annealing method, which utilizes overlapping adjacent regions across all regions of the substrate, limits the overlap to the unused space/boundary between the grains and also improves process uniformity results. Thus, by varying the amount of energy that is exposed to the critical regions that are delivered from the energy source 102 to process the substrate, the amount of process variation is minimized because any overlap in the transferred energy between the continuously placed annealing regions 104 can be Can be minimized.

Referring to Figure 1A, in one example, each region of the continuously placed annealing region 104 is a rectangular region having a size of about 22 mm by about 33 mm (e.g., an area of 726 square millimeters (mm ² )). In one aspect, the area of each region of the continuously disposed annealing region 104 formed on the surface of the substrate is between about 4 mm ² (e.g., 2 mm x 2 mm) to about 1000 mm ² (e.g., 25 mm x 40 mm). The circular preheating region 112 can surround the annealing region 104 and can extend beyond the edge of the annealing region 104 by up to about 100 mm. In an embodiment such as that shown in FIG. 1A, the preheating zone 112 preferably extends beyond the edge of the annealing zone 104 by no less than about 50 mm. The extent to which the preheating zone or intermediate temperature zone exceeds the annealing zone is generally dependent on the size of the substrate and the available energy transfer resources. In most embodiments, it is desirable to adjust the dimensions of the various intermediate temperature zones in order to minimize power requirements while providing the thermal budget management required for this embodiment. In some embodiments, the intermediate temperature region extends in at least one direction beyond the annealing region by less than 100 mm, such as less than 50 mm, such as about 30 mm.

Referring now to Figure 2, in another example, each of the annealed portions 208 can The dimensions have similar dimensions to the annealed regions 104 of Figure 1A. The preheated region 210 is shown adjacent to the annealed portion 208 on either side and coextensive with one dimension of the annealed portion 208. In some embodiments, the preheating zone 210 can extend beyond the edge of the annealed portion 208 by between about 50 mm and about 100 mm.

The size of the preheating zone or zone is typically selected to allow for preheating zones Fully warm up. In some embodiments, each preheat zone can be larger than the annealing zone to allow for sufficient preheating. In an embodiment characterized by continuous exposure of the series of anneal regions, the time required to preheat the preheat zone to the desired temperature may be longer than the time required to anneal the anneal zone. Thus, individual locations on the substrate can be subjected to two or more preheating processes.

In most embodiments, the energy source is typically adapted to deliver electricity Magnetic energy to anneal certain desired areas of the substrate surface. Typical sources of electromagnetic energy include, but are not limited to, sources of optical radiation (eg, lasers), electron beam sources, ion beam sources, microwave energy sources, visible light sources, and infrared sources. In one aspect, the substrate can be exposed to a pulse of energy from the laser that is required to emit radiation at one or more suitable wavelengths. In another aspect, a flash lamp can be used to generate a visible light energy that is pulsed on a substrate. In one aspect, the energy pulse from the energy source is tailored such that the amount of energy delivered to the annealing region and/or the amount of energy delivered during the pulse period is optimized to perform the target annealing of the desired region. In one aspect, the laser wavelength is tuned such that a significant portion of the radiation is absorbed by the layer of germanium disposed on the substrate. For laser annealing processes performed on germanium-containing substrates, the wavelength of the radiation is typically less than about 800 nm and can be in deep ultraviolet (UV), infrared (IR) or He wants to pass under the wavelength. In an embodiment, the energy source can be a strong source such as a laser that is adapted to deliver radiation at a wavelength between about 500 nm and about 11 microns. In most embodiments, the annealing process typically occurs on a given area of the substrate, and the annealing process takes a relatively short period of time, such as on the order of about 1 second or less.

In some embodiments, the energy source comprises a plurality of emitters, At least one of the anneal energies as described above and at least one of which emits preheat energy. The preheat energy can be continuous wave energy or it can be delivered in a pulsed manner. The preheat energy can be coherent or incoherent, monochromatic or polychromatic, polarized or non-polarized, or any combination or extent thereof. Preheating energy can be transmitted as strong white light, infrared light or laser light. Strong white light can be transmitted using a xenon lamp. Infrared light can be transmitted using a heat lamp. In some embodiments, the preheat energy can be delivered as continuous wave radiation while the annealing energy is delivered in a pulsed manner. The preheating energy is typically selected to increase the temperature of a small portion of the amount required for annealing or melting the substrate. In one embodiment, the laser can be placed above the work surface while four heat lamps surround the laser to preheat the area surrounding the annealing zone. In another embodiment, four xenon lamps can be used in place of the heat lamps to deliver intense white light.

Figure 5 is a diagram showing a processing chamber suitable for use in practicing embodiments of the present invention. A schematic cross-sectional view of chamber 500. Processing chamber 500 includes an optically transparent window 506 formed on chamber body 504. The chamber body 504 defines a processing volume 502. In an embodiment, the processing volume 502 can have an inert environment maintained by an inert gas source 512 and a vacuum pump 510 coupled to the processing volume 502.

The substrate support 508 is placed in the processing volume 502. The substrate support 508 is configured to support and move the substrate 514 disposed on the top surface 516. can The quantity source 518 is positioned outside of the chamber body 504 and is configured to project energy through the optically transparent window 506. The energy source can be configured to project annealing energy 520 and preheat energy 522 by any means described elsewhere herein. The substrate support 508 can be coupled to a temperature control unit 524 having cooling and heating capabilities for the substrate 514 disposed on the substrate support 508. The substrate support 508 can be coupled to one or more high precision stages 526 that allow for precise alignment and relative movement between the substrate 514 and the energy source 518 during processing.

In an embodiment, optical sensor 528 can be used to assist substrate 514 Alignment with energy source 518. Optical sensor 528 can be positioned adjacent optically transparent window 506 and coupled to control unit 530, which is further coupled to high precision stage 526. During alignment, optical sensor 528 can be "viewed" through optically transparent window 506 to position visual indicia on substrate 514, such as scores and cut lines around the die. Control unit 530 processes the signals from optical sensor 528 and generates control signals to high precision stage 526 for alignment adjustment.

As mentioned above, the substrate is usually annealed at one time due to power requirements. section. After each individual anneal, the electromagnetic energy must be translated relative to the substrate to illuminate the next annealed portion. Figure 6 is a diagrammatic top view of a substrate 600 containing 40 rectangular dies 602 arranged in an array. Each die 602 is delimited by a cut line 604 that also defines an unused region 606 between the die. A first energy projection region 608 is provided to direct a first amount of energy to a single die 602. In general, the first energy projection region 608 can cover an area equal to or greater than the area of each of the dies 602 but less than the unused 603 of the dies 602 and the surrounding scribe lines 604. The area of the area of the region 606 is such that the energy transferred in the energy projection region 608 completely covers the die 602 while not overlapping the adjacent die 602. A second energy projection region 610 surrounding the first energy projection region 608 is provided to transfer a second amount of energy to the substrate 600. The first amount of energy is usually different from the second amount of energy. In some embodiments, the first amount of energy is higher than the second amount and the power is greater. In some embodiments, the first amount of energy can be selected to anneal a portion of the substrate surface that is internal to the first energy projection region 608. In other embodiments, the first amount of energy can be selected to preferentially melt a portion of the substrate surface that is internal to the first energy projection region 608. A second amount of energy can be selected to preheat the portion of the substrate surface in the second energy projection zone 610. The preheating temperature increase of the second energy projection region 610 may be a fraction of the temperature increase achieved in the first energy projection region 608, such as between about 30% to about 70%, or preferably about 50. %. Therefore, the second energy projection region 610 maintains the temperature of the substrate surface therein lower than the temperature reached in the first energy projection region 608 to cause a temperature gradient at the interface between the first energy projection region and the second energy projection region. The thermal stress generated in the substrate is less than the thermal stress required to break the substrate.

Annealing for a plurality of grains 602 spread over the entire surface of the substrate The processing, substrate and/or energy source output is positioned and aligned relative to each die 602. In one embodiment, curve 612 illustrates the relative movement between die 602 of substrate 600 and energy projection regions 608 and 610 during an annealing sequence performed on each die 602 on the surface of substrate 600. In an embodiment, the relative movement can be achieved by translating the substrate in the x and y directions so that it follows curve 612. In another embodiment, the relative movement can be relative to the fixed substrate 600 mobile energy projection regions 608 and 610 are achieved. The energy projection regions 608 and 610 can be moved by moving the energy source relative to the substrate 600 or by operating the energy itself. In an embodiment that uses electromagnetic energy, optics can be used to operate the energy without moving the substrate or energy source. For example, one or more mirrors or lenses can direct the projected energy to the series of dies 602 as the energy projection regions 608 and 610 are moved accordingly.

Additionally, unlike the path represented by curve 612, the best available The yield and process quality are determined by the particular arrangement of the grains 602. For example, the alternate annealing path may follow a pattern of substantial spirals starting with grains 602 near the center of substrate 600 and proceeding in an expanded circular pattern, or starting with grains 602 at one edge of the substrate and Advance in a contracted circular pattern. In an embodiment, it is advantageous to advance the annealing path diagonally along the path drawn through the diagonal of the die 602. This path minimizes the chance of overlap of the anneal regions on the series of dies 602.

As the energy source progresses along the annealing path, the energy projection region is along the base The surface of the material moves. The second energy projection region 610 of FIG. 6 is located before the first energy projection region 608 in all directions. Accordingly, the second energy projection region 610 can be used to preheat the portion of the substrate to be annealed in the first energy projection region 608. Preheating reduces the effect of thermal stress on the substrate, thereby preventing damage to the substrate at the edges of the annealed regions.

In an alternative embodiment, the second energy projection area may be adjacent to the first Energy projection area. For example, the second energy projection region may be on either side of the first energy projection region and extend outward in the direction of the annealing path. Therefore, one part of the second energy projection area, that is, when the projected energy travels along the annealing path The portion of the substrate to be annealed may be preheated in a portion traveling in front of the first energy projection region while the other portion moderately cools the substrate behind the annealing region. Apparatus adapted to perform such an annealing process may advantageously have the ability to source a rotational energy at the extremes of the substrate so that the energy source can travel in different directions while the second energy projection region continues to lead the first energy projection region.

In one embodiment, as shown by curve 612 of FIG. 6, substrate 600 moves relative to energy projection regions 608 and 610 during the annealing process. When positioning and aligning a particular die 602 within the first energy projection region 608, the energy source directs energy pulses to the substrate 600 such that the die 602 is exposed to a quantity of energy that lasts as defined by the particular annealing process fabrication method. time. The duration of the pulse energy is typically short enough that the relative movement between the substrate 600 and the first energy projection region 608 does not cause any "blurring" across the grains 602, i.e., non-uniform energy distribution, and Will cause damage to the substrate. Thus, energy projection regions 608 and 610 can be continuously moved relative to substrate 600, while a short burst of annealing energy affects each die 602 in the first energy projection region. The energy affecting the second energy projection region 610 can likewise be in the form of a pulse or be continuous. If in the form of a pulse, the energy directed to the second energy projection region typically has a characteristic selected to increase the temperature of the substrate surface in the second energy projection region to impart a substantial increase in temperature to the first energy projection region. Portions (such as from about 30% to about 70%, or preferably about 50%) over the exposure time of the first energy projection area to manage the thermal budget of the substrate.

For example, if the first energy projection region experiences a first pulse (eg, 10 nanoseconds) that increases the temperature of the substrate from 20 ° C to an incident energy of 1,300 ° C. The second burst of incident energy delivered to the second energy projection region should increase the temperature of the substrate in the region to at least about 600 °C during the first burst. If necessary, the second pulse can be longer than the first pulse to allow time for the second energy projection region to heat up. In some embodiments, it is advantageous for the second energy projection region to surround the first energy projection region and to begin before the first pulse and end after the first pulse such that the first transmission is within an interval surrounding the first pulse The two-pulse preheating is subjected to a region of the first pulse along with an adjacent region of the substrate.

In other embodiments, the energy delivered to the second energy projection area It may be continuous, and the energy delivered to the first energy projection region is in the form of a pulse. In some embodiments, multiple energy pulses can be delivered to the first energy projection area and continuous energy is delivered to the second energy projection area.

Figure 7 is a diagram of an apparatus 700 in accordance with another embodiment of the present invention. Solve the cross-sectional view. Apparatus 700 includes a chamber 702 for processing substrate 704. The substrate is positioned on a substrate support 706 inside the chamber 702. In the embodiment of Figure 7, substrate support 706 is shown as a ring because the embodiment of Figure 7 irradiates substrate 704 from the front and back. In an alternate embodiment, the substrate 704 can be irradiated on only one side and can be placed on a substrate support such as the exemplary substrate support 508 of FIG. Lift pin 756 with actuator 758 lifts and lowers substrate support 706 to insert the substrate and remove the substrate from chamber 702. The chamber 702 has a lower portion 708 and an upper portion 710 that collectively define a processing volume 712. The upper portion generally has an upper wall 726 that defines an upper treatment volume 712A above the substrate 704. The upper portion 710 can have an opening 714 for storing and retrieving the substrate, and a self-contained gas source 718 can provide a gas inlet for the process gas. 716. The upper portion 710 supports a first window 720 made of a material selected for its light transmission and absorption properties. A first energy source 722 is positioned outside of the chamber 702 to direct the first energy 724 to the first window 720. The first window preferably allows some or all of the first energy 724 to enter the chamber 702.

The lower portion 708 of the chamber 702 includes a lower chamber wall 728 that is bounded The process volume 712B is set. The lower portion 708 can have a gas outlet 730 coupled to the pump 732 to remove process gases from the chamber 702. The lower portion 708 of the chamber 702 houses a second source of energy 734. The second energy source 734 includes a plurality of light sources 736 for generating a second energy 738 and directing the second energy 738 to the substrate 704. The second window 740 covers a plurality of light sources 736. Each light source is housed in a tube 760 that can be reflective to direct energy from the source 736 to the substrate 704. Light source 736 is typically powered by power source 742. In the embodiment of FIG. 7, power from the power source 742 is directed via a switch box 744 that directs power from the power source 742 to one or more of the light sources 736. Light source 736 can be selectively energized by controlling the operation of switching box 744.

In many embodiments, light source 736 is an infrared light generator (such as a heat lamp), but it can also be configured to produce broad-spectrum light, ultraviolet light, or a broad spectrum of wavelengths across the ultraviolet to infrared. The combination. In some embodiments, light source 736 can be a white light, such as a halogen light or a flash light. A portion of the substrate 704 is heated by the second energy 738 generated by the light source 736 to an insufficient temperature to anneal the substrate. Thus, light source 736 acts as a source of preheat energy. The portion of substrate 704 that is processed by second energy 738 is thus preheated zone 746.

In many embodiments, the first energy source 722 can be a laser that is capable of producing light at wavelengths that are readily absorbed by the substrate 704. In other embodiments, The first energy source 722 can be a flash or a white light source. A portion of the substrate 704 is heated by the first energy 724 generated by the first energy source 722 to a temperature sufficient to anneal the portion of the substrate 704. Thus, the first energy source 722 acts as a source of annealing energy. The portion of substrate 704 that is processed by first energy 724 is thus an annealing zone 748.

As noted above, substrate 704 is preferably treated in portions. Actuator 750 is positioned to position the first energy source 722 over the annealing region 748. Controller 752 operates actuator 750 to position first energy source 722 over annealing zone 748 and operates switching box 744 to switch power to one or more light sources 736 to direct preheating energy to preheating zone 746 . In this way, a portion of the substrate is preheated prior to annealing. Controller 752 operates to move preheating zone 746 and annealing zone 748 together such that any portion of substrate 704 that has been annealed is first preheated, but most of substrate 704 remains at ambient temperature to define the surrounding zone. 754.

8A and 8B are diagrams showing the temperature of two embodiments of the present invention A graph of degrees-time distribution. Each graph shows the temperature at a point on the surface of the substrate subjected to heat treatment in accordance with an embodiment of the present invention. As described above, the substrate moves relative to the source of energy that directs energy to the surface of the substrate. In FIG. 8A, when an exemplary point on the surface of the substrate moves from the surrounding area to the first preheating zone, the temperature of the point moves from the ambient temperature in the ambient temperature section 800 to the first preheating section 802. First preheating temperature. As described elsewhere herein, the first preheat temperature is typically lower than the temperature required to anneal the surface of the substrate. When the exemplary point moves from the first preheating zone to the second preheating zone, the temperature of the other point moves from the first preheating temperature in the first preheating zone 802 to the second preheating in the second preheating zone 804. Hot temperature degree. The embodiment of Figure 8A illustrates four zones defined on the surface of the substrate, namely a peripheral zone, two preheat zones, and an annealing zone. When an exemplary point on the surface of the substrate moves from the second preheating zone to the annealing zone, the temperature of the spot moves from the second preheating temperature in the second preheating zone 804 to the annealing temperature in the annealing zone 806. When the exemplary point moves out of the annealing zone and returns to the lower temperature zone, it undergoes cooling to reach the condition of the second preheating zone 804 in the first cooling and cooling zone 808, reaching the first of the second cooling and cooling zones 810. The conditions of the interval 802 are preheated and eventually reach the surrounding conditions in the second surrounding interval 812. It should be noted that the features of alternative embodiments may be temperatures during cooling cool down intervals 808 and 810 that are different from their temperatures in preheating intervals 802 and 804. Accordingly, the temperature in the cooling and cooling interval 808 may be higher or lower than the temperature in the preheating interval 802, and the temperature in the cooling and cooling interval 810 may be higher or lower than the temperature in the preheating interval 804. It should be appreciated that similar embodiments may feature only one preheat zone or more than two preheat zones. As such, some embodiments may be characterized by only one cooling cooling interval or more than two cooling cooling intervals.

Figure 8B is a diagram depicting an experience in accordance with another embodiment of the present invention The temperature-time distribution of a point on the surface of the heat treated substrate. In the embodiment of Figure 8B, exemplary points on the surface of the substrate move from the surrounding section 850 to the first preheating section 852, which is similar to the embodiment of Figure 8A. The exemplary point then moves into a second preheating interval 854, which is characterized by a varying temperature-time distribution. In this embodiment, as the exemplary point moves across the second preheat zone 854, the temperature at the point increases from the first preheat temperature to the second preheat temperature. The rise may be linear as indicated by interval 854, or it may have some other distribution, even including a temperature-time fraction that generally rises during the second preheat interval 854. The cloth has a short interval of cooling. The exemplary point moves into the annealing section 856 and then into the first cooling cooling interval 858, which may also have a varying temperature-time distribution, which is very similar to the distribution of the second preheating interval 854. The exemplary point then moves into the second cooling cool down interval 860 and then into the second surrounding interval 862.

Figure 9 is a diagram showing a method 900 in accordance with an embodiment of the present invention. flow chart. At 910, the substrate is provided to a thermal processing chamber. At 920, a plurality of zones are defined on the surface of the substrate. Each zone is treated with electromagnetic energy having different power levels. In most embodiments, there are at least 3 zones, but features of embodiments of the invention encompass two zones or more than three zones. In most embodiments, at least one zone is an annealing zone that is treated by electromagnetic energy selected to anneal the surface of the substrate. In some embodiments, it may be desirable to melt the surface of the substrate in at least one of the annealing zones. In most embodiments, at least one zone is a preheat zone. In some embodiments, one or more zones may be preheating and cooling downcoming zones, while in other embodiments, one or more zones may be dedicated preheating or cooling down zones.

In one aspect, the substrate is placed on a substrate support and will be A quantity of electromagnetic energy is directed to the first portion of the substrate. Additionally, directing a second amount of electromagnetic energy to the second portion of the substrate, wherein the first portion of the substrate surrounds the second portion of the substrate, the first amount of electromagnetic energy preheats the first portion of the substrate, and the second amount Electromagnetic energy anneals the second portion of the substrate. The first amount and the second amount are moved across the substrate to maintain a constant spatial relationship between the two quantities of energy such that the regions of the substrate within the first portion and the second portion move with energy movement.

In another aspect, the electromagnetic energy delivered in the two quantities can have any desired characteristics. The energy of each amount can be coherent or incoherent, monochromatic or polychromatic, polarized or unpolarized, and continuous or in the form of pulses to any degree. Each amount of energy can be delivered by one or more lasers, a strong white light, a flashlight, a heat lamp, or a combination thereof. The two quantities of energy may be delivered by electromagnetic energy having only different intensities, or the two quantities may differ by any desired degree in any of the features mentioned above. In one example, the first amount can be delivered by one or more lasers, each delivering at least 100 W/cm ² of power at a wavelength of less than about 850 nm. The laser can be a source of pulse energy or a source of continuous wave energy. In embodiments in the form of a pulse, the pulses can be achieved by powering the laser cycle or by intermittently blocking the optical switching of the laser beam away from the optical component. In another example, the second amount can be delivered by one or more lamps that deliver incoherent light to a power level of less than 50 W/cm ² (such as about 25 W/cm ² ) Two parts.

Figure 10 is a diagram outlining a method in accordance with another embodiment of the present invention. 1000 flow chart. At 1010, the substrate is positioned on a substrate support in the thermal processing chamber. At 1020, a first source of electromagnetic energy is directed to the first portion of the substrate. At 1030, a second source of electromagnetic energy is simultaneously directed to a second portion of the substrate. As described elsewhere herein, one of the sources may be configured to deliver annealing energy while the other is configured to deliver preheat energy. At 1040, the substrate is translated relative to the first energy source and the second energy source. Translating the substrate causes the transmitted energy to translate across the surface of the substrate, thereby partially annealing the entire surface. In the embodiment of Figure 10, the source of energy is substantially fixed while the substrate is moving, but certain embodiments may be characterized by energy sources other than substrate movement or The energy also moves. Translation of the substrate is typically accomplished by the use of a movable substrate support such as a precision stage capable of positioning the substrate at precise locations within the interior of the device.

In most embodiments, the zones are maintained at different temperatures. In some embodiments, the zones are heated by directing various types and strengths of electromagnetic energy to the surface of the substrate. In the embodiment of Figure 9, at 930, electromagnetic energy of different power levels is used to irradiate the zones. In other embodiments, additional heat can be imparted to the substrate by using a heated substrate support that contacts the back side of the substrate. In other embodiments, portions of the substrate can be selectively cooled by contacting the cooled substrate support on the back side of the substrate. The temperature in at least one of the zones is selected to anneal the surface of the substrate. The temperature in at least one of the zones is selected to preheat the surface of the substrate and the temperature is lower than the temperature required to anneal the surface of the substrate. One can receive the maximum power level for the zone of the annealing zone. Other zones receive lower power levels. A high power level that can receive less than a maximum level of power can be one or more zones of the preheat zone. Other zones may receive negligible power or may be cooled. Some zones may be surrounding zones where the temperature of the substrate is maintained at ambient temperature.

In some embodiments, different electromagnetic energy sources may be used to irradiate The same district. One or more lasers provide electromagnetic energy. The first laser can generate energy for annealing a portion of the substrate in one zone, and the second laser can generate energy for preheating a portion of the substrate in another zone. In an alternate embodiment, a plurality of lasers can preheat portions of the substrate. In another embodiment, such as the embodiment of Figure 7, one or more heat lamps can preheat portions of the substrate.

In embodiments in which the plurality of zones include the anneal zone, the zones providing preheat or cool down functionality may be shaped to facilitate preheating or cooling to cool down. Retreat In an exemplary embodiment having a preheating zone on one side of the fire zone and a cooling and cooling zone on the opposite side, the preheating zone and the cooling and cooling zone may have a wedge shape, and the first edge abuts the edge of the annealing zone and is adjacent to the annealing zone. The edges coextend and the second edge is opposite the first edge and shorter than the first edge to form a trapezoidal shape. In an alternate embodiment, the preheating and cooling cooling zones may be triangular in shape and one of the edges of each zone may coextend with the edge of the annealing zone. In other alternative embodiments, the tapered ends of the preheat and cool down zones may be curved and, in some embodiments, may be parabolic or semi-circular.

Multiple zones with different temperatures and shapes are usually allowed by Part of the material is exposed to electromagnetic energy intended to excite the movement of atoms in the lattice of the substrate to rapidly anneal the substrate while maintaining thermal stress below a threshold level, and if it exceeds the threshold level, it will destroy Substrate. The preheating and cooling cooling zones allow the annealing process to start from a high temperature, accelerating the rise of the extreme temperature and cooling down during the annealing. The wedge shape of the preheating and cooling cooling zone can be used to minimize thermal exposure of the unannealed portion of the substrate, which will minimize the atoms that may have been repositioned by the annealing process or may have been in the desired position prior to the annealing process. Unwanted movement of atoms. In general, the amount and shape of the preheating and cooling zones can be selected to promote the desired annealing process.

The embodiments described above are typically characterized by a substantially constant temperature District. The first zone is maintained at the first temperature, the second zone is maintained at the second temperature, and so on. In other embodiments, one or more zones may have a temperature gradient to facilitate heating or cooling near the annealing zone. For example, in a three-zone embodiment, the first zone, which may be a preheat zone, may have a temperature gradient that increases toward a second zone that may be an annealing zone. Similarly, the third zone, which may be a cooling and cooling zone, may have Increase the temperature gradient towards the second zone. The temperature gradient provides the same general function as the wedge shaped shape described above. The temperature gradient can be established in a given zone by using the optics to adjust the delivered energy to achieve the desired temperature profile.

In an exemplary embodiment, there is sufficient power to anneal the substrate A single source of energy can be directed to direct electromagnetic energy to the substrate. A lens having a defocusing feature can be disposed between the energy source and the substrate. The lens can have a first portion that defocuss a respective first portion of electromagnetic energy and a second portion that further focuses or otherwise does not change a second portion of the electromagnetic energy. For example, if the laser is used as a source of electromagnetic energy and the shaping optics are used to form a circular annealing energy beam having a diameter of 2 mm, the lens can be disposed between the shaping optic and the substrate, the lens having a radius of 0.5 mm The circular central portion is surrounded by a concentric annular outer portion having a radius of 1.5 mm. If necessary, the circular central portion may have neutral optics or may focus on portions of the annealing energy beam incident on the portion. The concentric annular outer portion of the lens can be shaped to reduce the strength of the outer portion of the annealing energy beam. The energy of the reduced intensity is then impinged on the surface of the substrate with a power sufficient to preheat the preheated portion of the surface without annealing it, while the portion of the annealed portion of the preheated portion is not altered or focused.

Figure 11 is a diagram outlining a method in accordance with another embodiment of the present invention. Flow chart of 1100. At 1102, the substrate is positioned on a substrate support in the thermal processing chamber. At 1104, a plurality of zones are defined on the surface of the substrate. At 1106, the first portion of the zones is maintained at ambient temperature. In some embodiments, the ambient temperature can be room temperature, or in other embodiments, the ambient temperature can be a high temperature. In most embodiments, the ambient temperature is less than about 200 °C, although some embodiments may feature an ambient temperature of up to 350 °C. By using a heated substrate support The ambient temperature is maintained or the ambient temperature is maintained by irradiating the substrate with electromagnetic energy suitable for the heating to be applied.

At 1108, preheating energy is provided to a second portion of the defined zone to It is heated to one or more intermediate temperatures above ambient temperature. Each zone can be heated to the same intermediate temperature or heated to a different intermediate temperature. The region near the region to be annealed is typically maintained at the same or higher temperature than the temperature of the region away from the region to be annealed. In embodiments where the second portion comprises more than one zone, the intermediate temperature can be raised from the ambient temperature to the annealing temperature in a stepwise manner. The temperature difference between the intermediate temperature and the ambient temperature is typically between about 10% and about 90% of the temperature difference between the annealing temperature and the ambient temperature, such as between about 30% and about 70%, such as about 50. %. In an exemplary embodiment in which the second portion comprises two zones, the temperature difference between the first intermediate temperature zone and the surrounding zone may be about 40% of the temperature difference between the annealing temperature and the ambient temperature, and the second intermediate temperature The temperature difference between the zone and the surrounding zone is about 60% of the temperature difference between the annealing temperature and the ambient temperature.

At 1110, annealing energy is provided to a third portion of the defined zone to It is heated to one or more annealing temperatures above ambient temperature and intermediate temperature, and the annealing energy is selected to anneal the surface of the substrate. The annealing zone comprising the third portion of the defined zone can have any of the spatial relationships described herein. In addition, different annealing temperatures may be applied to different annealing zones as necessary.

At 1112, one or more of the aforementioned temperatures can be detected and used to control The preheating energy, the annealing energy, or both are passed to maintain the thermal gradient between the zones below a threshold level. In some embodiments, one or more thermal imaging elements can be used to detect the temperature of various zones. Can change the temperature of one zone to another The temperature of the zone is compared to determine if the thermal gradient between the zones is excessive. The energy delivered to one or more of the detected zones can be adjusted based on the detected temperature to increase or decrease the thermal gradient between the two zones. If the substrate is annealed by moving the energy source, the detector can be co-located with the energy source to travel along the substrate along the annealing zone and the preheating zone. If the substrate is annealed only by moving energy (eg, using a mirror), a similar optical device can be used to focus the detector on the processed portion of the substrate under the guidance of the controller, or the entire substrate can be The material was sampled and a computer was used to determine the thermal gradient of interest.

Instance

In an exemplary embodiment, the substrate can be positioned on a support in a heat treatment apparatus. The substrate can be held in place by any means known in the art, including electrostatic or vacuum means. The laser is disposed over the substrate and oriented such that it produces a beam of light that strikes the substrate in a direction substantially perpendicular to the plane of the substrate. The laser can be coupled to an optical component that is adapted to position the laser in three dimensions. The laser can be adapted to deliver up to 10 kW/cm ² of laser energy to the annealed area of the substrate measuring 22 mm by 33 mm. The laser is preferably tuned to a wavelength that is readily absorbed by the substrate, such as a wavelength of less than 800 nm for a germanium substrate.

In operation, an electrical switch coupled to the power source or the laser can be used Or an optical switch coupled to the optical component to switch the laser. The switches can be configured to turn the laser on or off within less than 1 microsecond (μsec) such that the laser can deliver an energy pulse lasting from about 1 μsec to about 10 milliseconds (msec).

For this example, the preheating source is common to the laser in the optical assembly Positioning. The preheating source can be another laser, xenon or heat lamp and can be adapted Electromagnetic energy of up to 500 W is delivered to a substantially circular region surrounding the annealing zone and concentric with the annealing zone, the circular annealing zone diameter being measured to be about 2 cm. The preheating source can be focused using a suitable lens and mirror to capture and direct all of the energy of the preheat source. The preheating light source can be located in a housing positioned adjacent the laser source such that light from the preheating source illuminates the area of the substrate surrounding the area to be annealed. The preheating source can be slightly angled to the center of the preheating zone around the annealing zone. Alternatively, the preheating source can project energy onto the substrate in a manner substantially perpendicular to the plane of the substrate, the optics being used to spread the light over a range of preheating regions surrounding the annealing region. The preheating light source can then be advantageously positioned relative to the laser such that the preheating zone extends away from the annealing zone in the direction of the annealing path. The optical assembly can additionally be adapted to rotate such that the preheating source maintains a favorable position relative to the laser as the annealing path changes direction.

The processing device is preferably configured to use a class known in the art A movable stage translates the substrate relative to the optical assembly. In operation, the stage positions the substrate below the optical component such that the target area of the substrate is exposed to the optical component. When no annealing energy is present, the preheating source can illuminate continuously, preheating the energy to illuminate the substrate. The continuous preheating energy heats the surface of the substrate in the region surrounding the annealing target zone to at least 600 °C. The laser emits one or more pulses at the target annealing zone. The pulses can be short enough so that the stage can move continuously along the annealing path without blurring the laser pulses. The preheating zone moves along the surface of the substrate as the stage moves, thereby heating the portions to the target preheat temperature as the portion of the substrate approaches the target annealing zone. Thus, portions of the substrate that directly abut the target annealing region are not subject to destructive thermal stress due to the high thermal gradient at the edges of the target annealing region.

In an alternative exemplary embodiment, in the optical assembly at the laser week Two to four preheated energy sources spaced around the laser can surround the laser. The use of multiple preheat sources allows for uniform preheating across the entire preheating zone of the substrate. Alternatively, the laser can be accompanied by two different sources of preheat energy that are adapted to illuminate different regions of the substrate. For example, one source of preheat energy can be adapted to illuminate a circular region having a diameter of about 3 cm, while another source of preheating energy illuminates a concentric circular region having a diameter of about 1.5 cm, which is also concentric with the annealing region. . Therefore, two preheating zones are formed. The two preheat sources can deliver a similar amount of energy such that the preheat source that illuminates a wider area produces a lower temperature rise than the more concentrated preheat source. In an embodiment, the preheating source that illuminates the wide region may heat the region to a temperature above 300 ° C or above, and the preheating source that illuminates a smaller region of the wide preheating region may rely on incremental energy (incremental Energy) heating the smaller area to a temperature of 700 ° C or higher. The anneal pulse can then anneal the substrate to anneal the substrate by transferring sufficient energy to raise the temperature of the anneal region to 1,200 ° C or above 1,200 ° C while not melting the substrate material.

In another exemplary embodiment, a single source of energy can be used. Lift For example, the laser can be adapted to produce a single column of light that can be used for both preheating energy and annealing energy. Optics, including mirrors, lenses, filters, and beam splitters, are typically used to tune the laser light to have the desired polarization or coherence. The optical devices can also include lenses that defocus a portion of the laser light. The defocused portion of the laser light can then be directed to the area surrounding the annealing region. For example, with the cooperation of appropriate optics, the laser can produce a cylindrical coherent beam of approximately 1 mm in diameter. The light beam can be guided via a lens having a circular non-refractive central portion having a diameter of approximately 0.8 mm and a ring having an inner diameter of 0.8 mm and an outer diameter of greater than 1 mm. Defocusing the outer part. The portion of the laser beam passing through the non-refracting portion of the lens continues to pass to the substrate, thereby annealing the exposed portion of the substrate, while the portion of the laser beam passing through the defocused portion of the lens is reduced in intensity and spread over a wider area. Area to heat the area to a lower temperature.

Although the foregoing is directed to embodiments of the present invention, it is not departing from the present invention. Other and additional embodiments of the invention can be devised in the context of the basic scope of the invention.

100‧‧‧ Equipment

102‧‧‧Energy source

104‧‧‧ Annealed area

106‧‧‧Substrate

108‧‧‧Working surface

110‧‧‧Electric actuator

112‧‧‧Preheating area

114‧‧‧cut or cut line

Claims (19)

An apparatus for heat treating a substrate, the apparatus comprising: a movable substrate support; a first energy source for directing annealing energy to a first portion of one of the surfaces of the substrate support, the first a portion having a rectangular shape, wherein the annealing energy is less than energy required to melt the first portion; a second source of energy for directing preheating energy to a second portion of the surface of the substrate support, the second The portion has an irregular shape and overlaps the first portion; and an optical component that houses the first energy source and the second energy source. The device of claim 1, wherein the first source of energy is a laser and the second source of energy is a laser. The apparatus of claim 1 wherein the annealing energy has a power density of at least 1 W/cm ² . The apparatus of claim 3, wherein the preheating energy has a power density of at least 0.1 W/cm ² . The device of claim 1, wherein the optical component further comprises: a first optical tuner and a second optical tuner, the first optical tuner for shaping the annealing energy and the second optical tuner for The preheating energy is shaped. The device of claim 1, further comprising: a controller coupled to the substrate support, the controller for pulsing the preheat energy, the annealing energy, or both. The device of claim 1, wherein the second source of energy comprises a plurality of sources of light disposed about the first source of energy. A processing chamber for annealing a semiconductor substrate, comprising: a substrate support disposed in the chamber and defining a processing region; a first energy source for directing a first energy to the processing region a first region; and a second energy source for directing a second energy to a second region of the processing region, wherein at least one of the first region and the second region has an irregular shape And the first region and the second region are each smaller than the processing region, and wherein the intensity of the first energy is different from the second energy. The chamber of claim 8, wherein the first region surrounds the second region. The chamber of claim 8 wherein the first source of energy comprises a laser and the second source of energy comprises a laser. The chamber of claim 8 further comprising an optical component for shaping the first energy and the second energy. The chamber of claim 8 wherein the second source of energy comprises a plurality of sources of light disposed about the first source of energy. The chamber of claim 8 wherein the first energy is annealing energy and the second energy is preheating energy. The chamber of claim 13 wherein the first source of energy is a laser and the second source of energy is a laser and the second energy surrounds the first energy. The chamber of claim 14, further comprising: a first optical tuner and a second optical tuner coupled to the first energy source, the first optical tuner A first energy shaping is formed, and the second optical tuner is coupled to the second energy source, the second optical tuner shaping the second energy. The chamber of claim 8 further comprising: an actuator coupled to the substrate support, the actuator moving the base relative to the first source of energy and the second source of energy Material support. The chamber of claim 16, further comprising: a controller coupled to the substrate support and coupled to the first source of energy and the second source of energy. The chamber of claim 17, wherein the first source of energy is a laser, the second source of energy is a laser, and the second region surrounds the first region. An apparatus for processing a substrate, the apparatus comprising: a movable substrate support; a first source of energy for directing a first amount of energy to one of the surfaces of the substrate support a portion for providing a first energy projection region; and a second energy source for directing a second amount of energy to a second portion of the surface of the substrate support to provide a surrounding energy a second energy projection area of the projection area, wherein the second energy projection area has an irregular shape, and wherein the intensity of the first quantity of energy is different from the second quantity of energy.