TWI419234B - Managing thermal budget in annealing of substrates - Google Patents

Managing thermal budget in annealing of substrates Download PDF

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Publication number
TWI419234B
TWI419234B TW098130387A TW98130387A TWI419234B TW I419234 B TWI419234 B TW I419234B TW 098130387 A TW098130387 A TW 098130387A TW 98130387 A TW98130387 A TW 98130387A TW I419234 B TWI419234 B TW I419234B
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TW
Taiwan
Prior art keywords
energy
annealing
substrate
heating
zone
Prior art date
Application number
TW098130387A
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Chinese (zh)
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TW201013789A (en
Inventor
Stephen Moffatt
Abhilash J Mayur
Sundar Ramamurthy
Joseph Ranish
Aaron Hunter
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Applied Materials Inc
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Publication date
Priority claimed from US12/212,214 external-priority patent/US8314369B2/en
Priority claimed from US12/212,157 external-priority patent/US20100068898A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW201013789A publication Critical patent/TW201013789A/en
Application granted granted Critical
Publication of TWI419234B publication Critical patent/TWI419234B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
  • Furnace Details (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Claims (20)

一種處理一基材之方法，包含以下步驟：將該基材定位於一固定基材支撐件上；定位一能量來源以提供加熱能量至該基材的一表面；將該加熱能量導向該基材以在該基材的該表面上形成一熱區與一退火區；及移動該加熱能量以藉由依續定位該熱區與該退火區於該基材之各所選區域上來處理該些所選區域，其中該退火區具有一矩形形狀而該熱區具有一淚珠形形狀。 A method of processing a substrate comprising the steps of: positioning the substrate on a fixed substrate support; positioning an energy source to provide heating energy to a surface of the substrate; directing the heating energy to the substrate Forming a hot zone and an annealing zone on the surface of the substrate; and moving the heating energy to process the selected regions by successively positioning the hot zone and the annealing zone on each selected area of the substrate a region, wherein the annealing zone has a rectangular shape and the hot zone has a teardrop shape. 根據申請專利範圍第1項所述之方法，其中該熱區環繞該退火區。 The method of claim 1, wherein the hot zone surrounds the annealing zone. 根據申請專利範圍第1項所述之方法，其中該加熱能量小於熔融該基材之一部分所需之加熱能量。 The method of claim 1, wherein the heating energy is less than a heating energy required to melt a portion of the substrate. 根據申請專利範圍第1項所述之方法，其中該加熱能量傳遞至該熱區為連續式，而該加熱能量傳遞至該退火區為脈衝式。 The method of claim 1, wherein the heating energy is transferred to the hot zone in a continuous manner, and the heating energy is transferred to the annealing zone in a pulsed manner. 根據申請專利範圍第1項所述之方法，其中該加熱能量將該熱區之溫度提高一第一溫度變化並將該退火區之溫度提高一第二溫度變化，其中該第一溫度變化在該第二溫度變化的約10%與約90%之間。 The method of claim 1, wherein the heating energy increases a temperature of the hot zone by a first temperature change and increases a temperature of the annealing zone by a second temperature change, wherein the first temperature change is The second temperature varies between about 10% and about 90%. 根據申請專利範圍第5項所述之方法，其中該第一溫度變化在該第二溫度變化的約30%與約70%之間。 The method of claim 5, wherein the first temperature change is between about 30% and about 70% of the second temperature change. 根據申請專利範圍第1項所述之方法，其中該加熱能量係由一單個能量來源來傳遞。 The method of claim 1, wherein the heating energy is delivered by a single source of energy. 根據申請專利範圍第1項所述之方法，其中該加熱能量由一或多個熱燈與一或多個雷射來傳遞。 The method of claim 1, wherein the heating energy is delivered by one or more heat lamps and one or more lasers. 根據申請專利範圍第1項所述之方法，更包括藉由加熱該基材支撐件來加熱該基材。 The method of claim 1, further comprising heating the substrate by heating the substrate support. 根據申請專利範圍第1項所述之方法，其中該熱區的溫度分布在一實質上線性方式中變化。 The method of claim 1, wherein the temperature distribution of the hot zone varies in a substantially linear manner. 根據申請專利範圍第1項所述之方法，其中該熱區鄰接於該退火區。 The method of claim 1, wherein the hot zone is adjacent to the annealing zone. 一種用於熱處理一基材之設備，該設備包含：一固定基材支撐件；一或多個能量來源，經定向以將退火能量導向該基材支撐件之一表面之一第一部分且將預熱能量導向該基材支撐件之該表面之一第二部分； 一光學組件，容納該一或多個能量來源；以及一致動器，用於相對於該固定基材支撐件來移動該退火能量及該預熱能量，其中該致動器旋轉該光學組件以定向該退火能量及該預熱能量。 An apparatus for heat treating a substrate, the apparatus comprising: a fixed substrate support; one or more sources of energy oriented to direct annealing energy to a first portion of one of the surfaces of the substrate support and to be pre- Thermal energy directed to a second portion of the surface of the substrate support; An optical assembly housing the one or more sources of energy; and an actuator for moving the annealing energy and the preheating energy relative to the stationary substrate support, wherein the actuator rotates the optical assembly to orient The annealing energy and the preheating energy. 根據申請專利範圍第12項之設備，其中至少一個能量來源為一雷射。 According to the apparatus of claim 12, at least one energy source is a laser. 根據申請專利範圍第12項之設備，其中至少一個能量來源為一燈。 According to the apparatus of claim 12, at least one energy source is a lamp. 根據申請專利範圍第12項之設備，其中該退火能量具有至少1W/cm2 之功率密度。The apparatus of claim 12, wherein the annealing energy has at least 1 W/cm 2 Power density. 根據申請專利範圍第15項之設備，其中該預熱能量具有至少0.1W/cm2 之功率密度。The device according to claim 15 wherein the preheating energy has at least 0.1 W/cm 2 Power density. 根據申請專利範圍第12項之設備，其中該光學組件進一步包含：一或多個光學調諧器，該一或多個光學調諧器用以將該退火能量及該預熱能量成形。 The device of claim 12, wherein the optical component further comprises: one or more optical tuners for shaping the annealing energy and the preheating energy. 根據申請專利範圍第12項之設備，進一步包含：一控制器，該控制器耦接至該致動器。 The device of claim 12, further comprising: a controller coupled to the actuator. 根據申請專利範圍第12項之設備，進一步包含：一偵測器，該偵測器用以感應該基材之一或多個部分之溫度。 The device of claim 12, further comprising: a detector for sensing a temperature of one or more portions of the substrate. 根據申請專利範圍第12項之設備，其中該一或多個能量來源包括環繞一退火能量來源配置之多個預熱能量來源。The device of claim 12, wherein the one or more energy sources comprise a plurality of sources of preheat energy disposed around an source of annealing energy.
TW098130387A 2008-09-17 2009-09-09 Managing thermal budget in annealing of substrates TWI419234B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/212,214 US8314369B2 (en) 2008-09-17 2008-09-17 Managing thermal budget in annealing of substrates
US12/212,157 US20100068898A1 (en) 2008-09-17 2008-09-17 Managing thermal budget in annealing of substrates

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EP (1) EP2342739A4 (en)
JP (1) JP5611212B2 (en)
KR (2) KR101800404B1 (en)
CN (1) CN102160157B (en)
SG (2) SG193882A1 (en)
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WO (1) WO2010033389A1 (en)

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KR20170078795A (en) * 2014-10-31 2017-07-07 어플라이드 머티어리얼스, 인코포레이티드 Integration of laser processing with deposition of electrochemical device layers
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KR102099890B1 (en) * 2017-05-18 2020-04-14 세메스 주식회사 Substrate treating apparatus and substrate treating method
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CN112038223A (en) * 2020-08-27 2020-12-04 上海华力集成电路制造有限公司 Method for improving wafer surface heat distribution in double-laser annealing process

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JP5611212B2 (en) 2014-10-22
SG193882A1 (en) 2013-10-30
JP2012503311A (en) 2012-02-02
KR101868378B1 (en) 2018-06-18
TW201342480A (en) 2013-10-16
TW201415558A (en) 2014-04-16
KR20170130616A (en) 2017-11-28
KR101800404B1 (en) 2017-11-22
EP2342739A4 (en) 2013-05-22
KR20110053387A (en) 2011-05-20
TW201013789A (en) 2010-04-01
WO2010033389A1 (en) 2010-03-25
CN102160157A (en) 2011-08-17
CN102160157B (en) 2015-11-25
TWI549190B (en) 2016-09-11
TWI549191B (en) 2016-09-11
SG10201807844VA (en) 2018-10-30
EP2342739A1 (en) 2011-07-13

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