SG10201807844VA - Managing thermal budget in annealing of substrates - Google Patents

Managing thermal budget in annealing of substrates

Info

Publication number
SG10201807844VA
SG10201807844VA SG10201807844VA SG10201807844VA SG10201807844VA SG 10201807844V A SG10201807844V A SG 10201807844VA SG 10201807844V A SG10201807844V A SG 10201807844VA SG 10201807844V A SG10201807844V A SG 10201807844VA SG 10201807844V A SG10201807844V A SG 10201807844VA
Authority
SG
Singapore
Prior art keywords
substrate
anneal
annealing
substrates
preheat
Prior art date
Application number
SG10201807844VA
Inventor
Stephen Moffatt
Abhilash Mayur
Sundar Ramamurthy
Joseph Ranish
Aaron Hunter
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/212,157 external-priority patent/US20100068898A1/en
Priority claimed from US12/212,214 external-priority patent/US8314369B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG10201807844VA publication Critical patent/SG10201807844VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
  • Furnace Details (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

MANAGING THERMAL BUDGET IN ANNEALING OF SUBSTRATES A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps. Fig. A 41
SG10201807844VA 2008-09-17 2009-09-03 Managing thermal budget in annealing of substrates SG10201807844VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/212,157 US20100068898A1 (en) 2008-09-17 2008-09-17 Managing thermal budget in annealing of substrates
US12/212,214 US8314369B2 (en) 2008-09-17 2008-09-17 Managing thermal budget in annealing of substrates

Publications (1)

Publication Number Publication Date
SG10201807844VA true SG10201807844VA (en) 2018-10-30

Family

ID=42039812

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201807844VA SG10201807844VA (en) 2008-09-17 2009-09-03 Managing thermal budget in annealing of substrates
SG2013069232A SG193882A1 (en) 2008-09-17 2009-09-03 Managing thermal budget in annealing of substrates

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2013069232A SG193882A1 (en) 2008-09-17 2009-09-03 Managing thermal budget in annealing of substrates

Country Status (7)

Country Link
EP (1) EP2342739A4 (en)
JP (1) JP5611212B2 (en)
KR (2) KR101868378B1 (en)
CN (1) CN102160157B (en)
SG (2) SG10201807844VA (en)
TW (3) TWI419234B (en)
WO (1) WO2010033389A1 (en)

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US8546805B2 (en) * 2012-01-27 2013-10-01 Ultratech, Inc. Two-beam laser annealing with improved temperature performance
US9376731B2 (en) * 2012-05-08 2016-06-28 Applied Materials, Inc. Magneto-thermal processing apparatus and methods
US9239192B2 (en) * 2013-02-20 2016-01-19 Taiwan Semiconductor Manufacturing Co., Ltd. Substrate rapid thermal heating system and methods
CN104752174A (en) * 2013-12-30 2015-07-01 上海微电子装备有限公司 Laser annealing device and method
TW201610215A (en) * 2014-03-27 2016-03-16 應用材料股份有限公司 Cyclic spike anneal chemical exposure for low thermal budget processing
KR20170078795A (en) * 2014-10-31 2017-07-07 어플라이드 머티어리얼스, 인코포레이티드 Integration of laser processing with deposition of electrochemical device layers
CN113981414A (en) * 2015-03-20 2022-01-28 应用材料公司 Atomic layer processing chamber for 3D conformal processing
US10256005B2 (en) * 2015-07-29 2019-04-09 Applied Materials, Inc. Rotating substrate laser anneal
JP6887234B2 (en) * 2016-09-21 2021-06-16 株式会社日本製鋼所 Laser irradiation device, laser irradiation method, and manufacturing method of semiconductor device
KR102099890B1 (en) * 2017-05-18 2020-04-14 세메스 주식회사 Substrate treating apparatus and substrate treating method
KR102180311B1 (en) 2018-07-27 2020-11-18 주식회사 코윈디에스티 Laser annealing apparatus
KR102061424B1 (en) * 2018-07-27 2019-12-31 주식회사 코윈디에스티 Low-e glass annealing apparatus
CN112038223A (en) * 2020-08-27 2020-12-04 上海华力集成电路制造有限公司 Method for improving wafer surface heat distribution in double-laser annealing process

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
JPS5696835A (en) * 1979-12-29 1981-08-05 Fujitsu Ltd Manufacture of semiconductor device
JPS58106836A (en) 1981-12-18 1983-06-25 Hitachi Ltd Laser annealing device
JPS58176929A (en) * 1982-04-09 1983-10-17 Fujitsu Ltd Manufacture of semiconductor device
JPH03266424A (en) * 1990-03-16 1991-11-27 Sony Corp Annealing process of semiconductor substrate
US5643801A (en) * 1992-11-06 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Laser processing method and alignment
US6423585B1 (en) * 1997-03-11 2002-07-23 Semiconductor Energy Laboratory Co., Ltd. Heating treatment device, heating treatment method and fabrication method of semiconductor device
KR20010006155A (en) 1998-02-13 2001-01-26 야스카와 히데아키 Method of producing semiconductor device and heat treating apparatus
US6771895B2 (en) * 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
TW457553B (en) * 1999-01-08 2001-10-01 Sony Corp Process for producing thin film semiconductor device and laser irradiation apparatus
AU2001247240A1 (en) * 2000-03-01 2001-09-12 Heraeus Amersil, Inc. Method, apparatus, and article of manufacture for determining an amount of energy needed to bring a quartz workpiece to a fusion weldable condition
JP2003045820A (en) * 2001-07-30 2003-02-14 Semiconductor Energy Lab Co Ltd Laser irradiation apparatus, and method, and method of manufacturing semiconductor device
US6987240B2 (en) * 2002-04-18 2006-01-17 Applied Materials, Inc. Thermal flux processing by scanning
JP2004128421A (en) * 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd Laser irradiation method, laser irradiation device, and method for manufacturing semiconductor device
US7098155B2 (en) * 2003-09-29 2006-08-29 Ultratech, Inc. Laser thermal annealing of lightly doped silicon substrates
TWI297521B (en) * 2004-01-22 2008-06-01 Ultratech Inc Laser thermal annealing of lightly doped silicon substrates
US7482254B2 (en) * 2005-09-26 2009-01-27 Ultratech, Inc. Apparatus and methods for thermally processing undoped and lightly doped substrates without pre-heating
US20080045040A1 (en) 2006-08-17 2008-02-21 Toshiba America Electronic Components, Inc. Laser Spike Anneal With Plural Light Sources
JP2008080371A (en) * 2006-09-27 2008-04-10 Sumitomo Heavy Ind Ltd Laser beam machining method and apparatus therefor

Also Published As

Publication number Publication date
SG193882A1 (en) 2013-10-30
KR20170130616A (en) 2017-11-28
EP2342739A1 (en) 2011-07-13
KR101800404B1 (en) 2017-11-22
TW201342480A (en) 2013-10-16
CN102160157B (en) 2015-11-25
TWI549191B (en) 2016-09-11
KR20110053387A (en) 2011-05-20
TWI419234B (en) 2013-12-11
CN102160157A (en) 2011-08-17
TW201013789A (en) 2010-04-01
TWI549190B (en) 2016-09-11
KR101868378B1 (en) 2018-06-18
JP2012503311A (en) 2012-02-02
TW201415558A (en) 2014-04-16
EP2342739A4 (en) 2013-05-22
JP5611212B2 (en) 2014-10-22
WO2010033389A1 (en) 2010-03-25

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