JP2012503311A5 - - Google Patents

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Publication number
JP2012503311A5
JP2012503311A5 JP2011526919A JP2011526919A JP2012503311A5 JP 2012503311 A5 JP2012503311 A5 JP 2012503311A5 JP 2011526919 A JP2011526919 A JP 2011526919A JP 2011526919 A JP2011526919 A JP 2011526919A JP 2012503311 A5 JP2012503311 A5 JP 2012503311A5
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Japan
Prior art keywords
energy
substrate
annealing
preheating
substrate support
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JP2011526919A
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Japanese (ja)
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JP5611212B2 (en
JP2012503311A (en
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Priority claimed from US12/212,214 external-priority patent/US8314369B2/en
Priority claimed from US12/212,157 external-priority patent/US20100068898A1/en
Application filed filed Critical
Priority claimed from PCT/US2009/055838 external-priority patent/WO2010033389A1/en
Publication of JP2012503311A publication Critical patent/JP2012503311A/en
Publication of JP2012503311A5 publication Critical patent/JP2012503311A5/ja
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Publication of JP5611212B2 publication Critical patent/JP5611212B2/en
Expired - Fee Related legal-status Critical Current
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Claims (15)

基板を処理する方法であって、
前記基板を可動式の基板支持体上に位置決めすることと、
前記基板の一部分より下にある第1の固定位置の方へ第1の数量の加熱エネルギーを誘導することと、
前記基板の一部分より下にある第2の固定位置の方へ第2の数量の加熱エネルギーを誘導することと、
前記基板支持体を動かし、前記第1の固定位置の上、次いで前記第2の固定位置の上にそれぞれの選択された領域を順次位置決めすることによって、前記基板の選択された領域を処理することと、
前記基板の一部分を500℃より低い温度で維持することと
を含み、前記第1の数量の加熱エネルギー又は前記第2の数量の加熱エネルギーはいずれも、前記基板のどの部分も溶融しない、方法。
A method of processing a substrate, comprising:
Positioning the substrate on a movable substrate support;
Inducing a first quantity of heating energy toward a first fixed position below a portion of the substrate;
Inducing a second quantity of heating energy toward a second fixed position below a portion of the substrate;
Processing the selected region of the substrate by moving the substrate support and sequentially positioning each selected region over the first fixed position and then over the second fixed position; When,
See containing and maintaining a portion of said substrate at a temperature lower than 500 ° C., both the first heating energy or heating energy of the second quantity of quantities, no part melting of the substrate, method .
前記第2の数量の加熱エネルギーが、前記基板の一部分をアニールするのに十分な電力を有する、請求項1に記載の方法。   The method of claim 1, wherein the second quantity of heating energy has sufficient power to anneal a portion of the substrate. 前記第1の数量の加熱エネルギーが、前記基板の一部分をアニールするのに必要な電力より小さい電力を有する、請求項2に記載の方法。   The method of claim 2, wherein the first quantity of heating energy has a power that is less than a power required to anneal a portion of the substrate. 基板表面をアニールする方法であって、
前記基板表面の予熱部分を、前記予熱部分にエネルギーを印加することによって予熱することと、
前記基板の前記予熱部分を予熱しながら、前記予熱部分内の前記基板のアニール部分を、前記アニール部分に増分エネルギーを印加することによってアニールすることと
を含み、前記予熱部分及び前記アニール部分の少なくとも1つの外周が円形ではない、方法。
A method of annealing a substrate surface,
Preheating the preheated portion of the substrate surface by applying energy to the preheated portion;
While preheating the preheated portion of the substrate, wherein the annealing portion of a substrate preheating portion, viewed contains a annealing by applying an incremental energy to the annealing portion, the preheating portion and the annealing portion The method wherein at least one outer periphery is not circular .
基板を熱処理する装置であって、
可動式の基板支持体と、
前記基板支持体の表面の第1の部分の方へアニールエネルギーを誘導するような向きにした第1のエネルギー源と、
前記基板支持体の前記表面の第2の部分の方へ予熱エネルギーを誘導するような向きにした第2のエネルギー源と、
前記第1および第2のエネルギー源を収容する光学アセンブリと
を備え、前記第1のエネルギー源または前記第2のエネルギー源はいずれも、10kW/cm を超えるエネルギーを発生しない、装置。
An apparatus for heat-treating a substrate,
A movable substrate support;
A first energy source oriented to induce annealing energy toward a first portion of the surface of the substrate support;
A second energy source oriented to induce preheating energy toward a second portion of the surface of the substrate support;
And an optical assembly containing said first and second energy sources , wherein neither said first energy source nor said second energy source generates energy exceeding 10 kW / cm 2 .
前記第1のエネルギー源がレーザであり、前記第2のエネルギー源がレーザである、請求項5に記載の装置。   The apparatus of claim 5, wherein the first energy source is a laser and the second energy source is a laser. 前記第1のエネルギー源がレーザであり、前記第2のエネルギー源が複数のランプである、請求項5に記載の装置。   The apparatus of claim 5, wherein the first energy source is a laser and the second energy source is a plurality of lamps. 前記光学アセンブリが、前記アニールエネルギーを成形するための第1の光チューナと、前記予熱エネルギーを成形するための第2の光チューナとをさらに備える、請求項5に記載の装置。   The apparatus of claim 5, wherein the optical assembly further comprises a first optical tuner for shaping the annealing energy and a second optical tuner for shaping the preheating energy. 前記基板支持体に結合された制御装置をさらに備える、請求項5に記載の装置。   The apparatus of claim 5, further comprising a control device coupled to the substrate support. 基板を熱処理する装置であって、
固定の基板支持体と、
前記基板支持体の表面の第1の部分の方へアニールエネルギーを誘導し、前記基板支持体の前記表面の第2の部分の方へ予熱エネルギーを誘導するような向きにした1つまたは複数のエネルギー源と、
前記1つまたは複数のエネルギー源を収容する光学アセンブリと、
前記固定の基板支持体に対して前記アニールエネルギーおよび前記予熱エネルギーを動かすためのアクチュエータと
を備え、各エネルギー源は最高約10kW/cm までの電力を有する、装置。
An apparatus for heat-treating a substrate,
A fixed substrate support;
One or more oriented to induce annealing energy toward a first portion of the surface of the substrate support and to induce preheating energy toward a second portion of the surface of the substrate support. Energy sources,
An optical assembly containing the one or more energy sources;
And an actuator for moving the annealing energy and the preheat energy to the substrate support of the fixed, each energy source that have a power of up to about 10 kW / cm 2, device.
少なくとも1つのエネルギー源がレーザである、請求項10に記載の装置。   The apparatus of claim 10, wherein the at least one energy source is a laser. 前記光学アセンブリが、前記アニールエネルギーおよび前記予熱エネルギーを成形するための1つまたは複数の光チューナをさらに備える、請求項10に記載の装置。   The apparatus of claim 10, wherein the optical assembly further comprises one or more optical tuners for shaping the annealing energy and the preheating energy. 前記アクチュエータに結合された制御装置をさらに備える、請求項10に記載の装置。   The apparatus of claim 10, further comprising a controller coupled to the actuator. 前記基板の1つまたは複数の部分の温度を感知するための検出器をさらに備える、請求項10に記載の装置。   The apparatus of claim 10, further comprising a detector for sensing the temperature of one or more portions of the substrate. 前記アクチュエータが、前記アニールエネルギーおよび前記予熱エネルギーを方向付けるように前記光学アセンブリを回転させる、請求項10に記載の装置。 The apparatus of claim 10, wherein the actuator rotates the optical assembly to direct the annealing energy and the preheating energy.
JP2011526919A 2008-09-17 2009-09-03 Control of heat during substrate annealing Expired - Fee Related JP5611212B2 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12/212,157 2008-09-17
US12/212,214 US8314369B2 (en) 2008-09-17 2008-09-17 Managing thermal budget in annealing of substrates
US12/212,214 2008-09-17
US12/212,157 US20100068898A1 (en) 2008-09-17 2008-09-17 Managing thermal budget in annealing of substrates
PCT/US2009/055838 WO2010033389A1 (en) 2008-09-17 2009-09-03 Managing thermal budget in annealing of substrates

Publications (3)

Publication Number Publication Date
JP2012503311A JP2012503311A (en) 2012-02-02
JP2012503311A5 true JP2012503311A5 (en) 2012-10-18
JP5611212B2 JP5611212B2 (en) 2014-10-22

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JP2011526919A Expired - Fee Related JP5611212B2 (en) 2008-09-17 2009-09-03 Control of heat during substrate annealing

Country Status (7)

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EP (1) EP2342739A4 (en)
JP (1) JP5611212B2 (en)
KR (2) KR101800404B1 (en)
CN (1) CN102160157B (en)
SG (2) SG10201807844VA (en)
TW (3) TWI549191B (en)
WO (1) WO2010033389A1 (en)

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