JP2012503311A5 - - Google Patents
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- JP2012503311A5 JP2012503311A5 JP2011526919A JP2011526919A JP2012503311A5 JP 2012503311 A5 JP2012503311 A5 JP 2012503311A5 JP 2011526919 A JP2011526919 A JP 2011526919A JP 2011526919 A JP2011526919 A JP 2011526919A JP 2012503311 A5 JP2012503311 A5 JP 2012503311A5
- Authority
- JP
- Japan
- Prior art keywords
- energy
- substrate
- annealing
- preheating
- substrate support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims 26
- 238000000137 annealing Methods 0.000 claims 11
- 230000003287 optical Effects 0.000 claims 8
- 238000010438 heat treatment Methods 0.000 claims 6
- 238000007493 shaping process Methods 0.000 claims 3
- 230000001939 inductive effect Effects 0.000 claims 2
- 238000002844 melting Methods 0.000 claims 1
Claims (15)
前記基板を可動式の基板支持体上に位置決めすることと、
前記基板の一部分より下にある第1の固定位置の方へ第1の数量の加熱エネルギーを誘導することと、
前記基板の一部分より下にある第2の固定位置の方へ第2の数量の加熱エネルギーを誘導することと、
前記基板支持体を動かし、前記第1の固定位置の上、次いで前記第2の固定位置の上にそれぞれの選択された領域を順次位置決めすることによって、前記基板の選択された領域を処理することと、
前記基板の一部分を500℃より低い温度で維持することと
を含み、前記第1の数量の加熱エネルギー又は前記第2の数量の加熱エネルギーはいずれも、前記基板のどの部分も溶融しない、方法。 A method of processing a substrate, comprising:
Positioning the substrate on a movable substrate support;
Inducing a first quantity of heating energy toward a first fixed position below a portion of the substrate;
Inducing a second quantity of heating energy toward a second fixed position below a portion of the substrate;
Processing the selected region of the substrate by moving the substrate support and sequentially positioning each selected region over the first fixed position and then over the second fixed position; When,
See containing and maintaining a portion of said substrate at a temperature lower than 500 ° C., both the first heating energy or heating energy of the second quantity of quantities, no part melting of the substrate, method .
前記基板表面の予熱部分を、前記予熱部分にエネルギーを印加することによって予熱することと、
前記基板の前記予熱部分を予熱しながら、前記予熱部分内の前記基板のアニール部分を、前記アニール部分に増分エネルギーを印加することによってアニールすることと
を含み、前記予熱部分及び前記アニール部分の少なくとも1つの外周が円形ではない、方法。 A method of annealing a substrate surface,
Preheating the preheated portion of the substrate surface by applying energy to the preheated portion;
While preheating the preheated portion of the substrate, wherein the annealing portion of a substrate preheating portion, viewed contains a annealing by applying an incremental energy to the annealing portion, the preheating portion and the annealing portion The method wherein at least one outer periphery is not circular .
可動式の基板支持体と、
前記基板支持体の表面の第1の部分の方へアニールエネルギーを誘導するような向きにした第1のエネルギー源と、
前記基板支持体の前記表面の第2の部分の方へ予熱エネルギーを誘導するような向きにした第2のエネルギー源と、
前記第1および第2のエネルギー源を収容する光学アセンブリと
を備え、前記第1のエネルギー源または前記第2のエネルギー源はいずれも、10kW/cm 2 を超えるエネルギーを発生しない、装置。 An apparatus for heat-treating a substrate,
A movable substrate support;
A first energy source oriented to induce annealing energy toward a first portion of the surface of the substrate support;
A second energy source oriented to induce preheating energy toward a second portion of the surface of the substrate support;
And an optical assembly containing said first and second energy sources , wherein neither said first energy source nor said second energy source generates energy exceeding 10 kW / cm 2 .
固定の基板支持体と、
前記基板支持体の表面の第1の部分の方へアニールエネルギーを誘導し、前記基板支持体の前記表面の第2の部分の方へ予熱エネルギーを誘導するような向きにした1つまたは複数のエネルギー源と、
前記1つまたは複数のエネルギー源を収容する光学アセンブリと、
前記固定の基板支持体に対して前記アニールエネルギーおよび前記予熱エネルギーを動かすためのアクチュエータと
を備え、各エネルギー源は最高約10kW/cm 2 までの電力を有する、装置。 An apparatus for heat-treating a substrate,
A fixed substrate support;
One or more oriented to induce annealing energy toward a first portion of the surface of the substrate support and to induce preheating energy toward a second portion of the surface of the substrate support. Energy sources,
An optical assembly containing the one or more energy sources;
And an actuator for moving the annealing energy and the preheat energy to the substrate support of the fixed, each energy source that have a power of up to about 10 kW / cm 2, device.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/212,157 | 2008-09-17 | ||
US12/212,214 US8314369B2 (en) | 2008-09-17 | 2008-09-17 | Managing thermal budget in annealing of substrates |
US12/212,214 | 2008-09-17 | ||
US12/212,157 US20100068898A1 (en) | 2008-09-17 | 2008-09-17 | Managing thermal budget in annealing of substrates |
PCT/US2009/055838 WO2010033389A1 (en) | 2008-09-17 | 2009-09-03 | Managing thermal budget in annealing of substrates |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012503311A JP2012503311A (en) | 2012-02-02 |
JP2012503311A5 true JP2012503311A5 (en) | 2012-10-18 |
JP5611212B2 JP5611212B2 (en) | 2014-10-22 |
Family
ID=42039812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011526919A Expired - Fee Related JP5611212B2 (en) | 2008-09-17 | 2009-09-03 | Control of heat during substrate annealing |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP2342739A4 (en) |
JP (1) | JP5611212B2 (en) |
KR (2) | KR101800404B1 (en) |
CN (1) | CN102160157B (en) |
SG (2) | SG10201807844VA (en) |
TW (3) | TWI549191B (en) |
WO (1) | WO2010033389A1 (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8546805B2 (en) * | 2012-01-27 | 2013-10-01 | Ultratech, Inc. | Two-beam laser annealing with improved temperature performance |
US9376731B2 (en) * | 2012-05-08 | 2016-06-28 | Applied Materials, Inc. | Magneto-thermal processing apparatus and methods |
US9239192B2 (en) * | 2013-02-20 | 2016-01-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Substrate rapid thermal heating system and methods |
CN104752174A (en) * | 2013-12-30 | 2015-07-01 | 上海微电子装备有限公司 | Laser annealing device and method |
TW201610215A (en) * | 2014-03-27 | 2016-03-16 | 應用材料股份有限公司 | Cyclic spike anneal chemical exposure for low thermal budget processing |
WO2016070185A1 (en) * | 2014-10-31 | 2016-05-06 | Applied Materials, Inc. | Integration of laser processing with deposition of electrochemical device layers |
DE202016009128U1 (en) * | 2015-07-29 | 2022-07-25 | Applied Materials, Inc. | Laser annealing of a rotating substrate |
JP6887234B2 (en) | 2016-09-21 | 2021-06-16 | 株式会社日本製鋼所 | Laser irradiation device, laser irradiation method, and manufacturing method of semiconductor device |
KR102099890B1 (en) * | 2017-05-18 | 2020-04-14 | 세메스 주식회사 | Substrate treating apparatus and substrate treating method |
KR102180311B1 (en) | 2018-07-27 | 2020-11-18 | 주식회사 코윈디에스티 | Laser annealing apparatus |
KR102061424B1 (en) * | 2018-07-27 | 2019-12-31 | 주식회사 코윈디에스티 | Low-e glass annealing apparatus |
CN112038223A (en) * | 2020-08-27 | 2020-12-04 | 上海华力集成电路制造有限公司 | Method for improving wafer surface heat distribution in double-laser annealing process |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5696835A (en) * | 1979-12-29 | 1981-08-05 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS58106836A (en) | 1981-12-18 | 1983-06-25 | Hitachi Ltd | Laser annealing device |
JPS58176929A (en) * | 1982-04-09 | 1983-10-17 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH03266424A (en) * | 1990-03-16 | 1991-11-27 | Sony Corp | Annealing process of semiconductor substrate |
US5643801A (en) * | 1992-11-06 | 1997-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method and alignment |
US6423585B1 (en) * | 1997-03-11 | 2002-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Heating treatment device, heating treatment method and fabrication method of semiconductor device |
CN1130756C (en) | 1998-02-13 | 2003-12-10 | 精工爱普生株式会社 | Method for producing semiconductor device and heat treating apparatus |
US6771895B2 (en) * | 1999-01-06 | 2004-08-03 | Mattson Technology, Inc. | Heating device for heating semiconductor wafers in thermal processing chambers |
TW457553B (en) * | 1999-01-08 | 2001-10-01 | Sony Corp | Process for producing thin film semiconductor device and laser irradiation apparatus |
WO2001064591A1 (en) * | 2000-03-01 | 2001-09-07 | Heraeus Amersil, Inc. | Method, apparatus, and article of manufacture for determining an amount of energy needed to bring a quartz workpiece to a fusion weldable condition |
JP2003045820A (en) * | 2001-07-30 | 2003-02-14 | Semiconductor Energy Lab Co Ltd | Laser irradiation apparatus, and method, and method of manufacturing semiconductor device |
US6987240B2 (en) | 2002-04-18 | 2006-01-17 | Applied Materials, Inc. | Thermal flux processing by scanning |
JP2004128421A (en) * | 2002-10-07 | 2004-04-22 | Semiconductor Energy Lab Co Ltd | Laser irradiation method, laser irradiation device, and method for manufacturing semiconductor device |
US7098155B2 (en) * | 2003-09-29 | 2006-08-29 | Ultratech, Inc. | Laser thermal annealing of lightly doped silicon substrates |
TWI297521B (en) | 2004-01-22 | 2008-06-01 | Ultratech Inc | Laser thermal annealing of lightly doped silicon substrates |
US7482254B2 (en) * | 2005-09-26 | 2009-01-27 | Ultratech, Inc. | Apparatus and methods for thermally processing undoped and lightly doped substrates without pre-heating |
US20080045040A1 (en) * | 2006-08-17 | 2008-02-21 | Toshiba America Electronic Components, Inc. | Laser Spike Anneal With Plural Light Sources |
JP2008080371A (en) * | 2006-09-27 | 2008-04-10 | Sumitomo Heavy Ind Ltd | Laser beam machining method and apparatus therefor |
-
2009
- 2009-09-03 CN CN200980136613.5A patent/CN102160157B/en not_active Expired - Fee Related
- 2009-09-03 WO PCT/US2009/055838 patent/WO2010033389A1/en active Application Filing
- 2009-09-03 JP JP2011526919A patent/JP5611212B2/en not_active Expired - Fee Related
- 2009-09-03 KR KR1020117008790A patent/KR101800404B1/en active IP Right Grant
- 2009-09-03 SG SG10201807844VA patent/SG10201807844VA/en unknown
- 2009-09-03 EP EP09814993.3A patent/EP2342739A4/en not_active Withdrawn
- 2009-09-03 KR KR1020177033214A patent/KR101868378B1/en active IP Right Grant
- 2009-09-03 SG SG2013069232A patent/SG193882A1/en unknown
- 2009-09-09 TW TW102141287A patent/TWI549191B/en not_active IP Right Cessation
- 2009-09-09 TW TW098130387A patent/TWI419234B/en not_active IP Right Cessation
- 2009-09-09 TW TW102122198A patent/TWI549190B/en not_active IP Right Cessation
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