JP2009529245A5 - - Google Patents
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- JP2009529245A5 JP2009529245A5 JP2008558449A JP2008558449A JP2009529245A5 JP 2009529245 A5 JP2009529245 A5 JP 2009529245A5 JP 2008558449 A JP2008558449 A JP 2008558449A JP 2008558449 A JP2008558449 A JP 2008558449A JP 2009529245 A5 JP2009529245 A5 JP 2009529245A5
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- JP
- Japan
- Prior art keywords
- substrate
- region
- regions
- electromagnetic energy
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000758 substrate Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 28
- 238000000137 annealing Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims 25
- 239000011248 coating agent Substances 0.000 claims 12
- 238000000576 coating method Methods 0.000 claims 12
- 239000000956 alloy Substances 0.000 claims 6
- 229910052787 antimony Inorganic materials 0.000 claims 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 5
- 229910052785 arsenic Inorganic materials 0.000 claims 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 5
- 229910052732 germanium Inorganic materials 0.000 claims 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 4
- 229910052799 carbon Inorganic materials 0.000 claims 4
- 229910052733 gallium Inorganic materials 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 3
- 238000002844 melting Methods 0.000 claims 3
- 230000008018 melting Effects 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 229910052718 tin Inorganic materials 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 238000004513 sizing Methods 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 claims 1
- 229910005540 GaP Inorganic materials 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- 229910000927 Ge alloy Inorganic materials 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- AXQKVSDUCKWEKE-UHFFFAOYSA-N [C].[Ge].[Si] Chemical compound [C].[Ge].[Si] AXQKVSDUCKWEKE-UHFFFAOYSA-N 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910003481 amorphous carbon Inorganic materials 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 238000001816 cooling Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 229940104869 fluorosilicate Drugs 0.000 claims 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910052743 krypton Inorganic materials 0.000 claims 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 101150095744 tin-9.1 gene Proteins 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052724 xenon Inorganic materials 0.000 claims 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US78074506P | 2006-03-08 | 2006-03-08 | |
| US60/780,745 | 2006-03-08 | ||
| US11/459,856 US20070212859A1 (en) | 2006-03-08 | 2006-07-25 | Method of thermal processing structures formed on a substrate |
| US11/459,856 | 2006-07-25 | ||
| US11/459,852 | 2006-07-25 | ||
| US11/459,852 US20070221640A1 (en) | 2006-03-08 | 2006-07-25 | Apparatus for thermal processing structures formed on a substrate |
| US11/459,847 | 2006-07-25 | ||
| US11/459,847 US7569463B2 (en) | 2006-03-08 | 2006-07-25 | Method of thermal processing structures formed on a substrate |
| PCT/US2007/062672 WO2007103643A2 (en) | 2006-03-08 | 2007-02-23 | Method and apparatus for thermal processing structures formed on a substrate |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013231220A Division JP5931039B2 (ja) | 2006-03-08 | 2013-11-07 | 基板に形成された熱処理構造用の方法および装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009529245A JP2009529245A (ja) | 2009-08-13 |
| JP2009529245A5 true JP2009529245A5 (enExample) | 2013-01-24 |
| JP5558006B2 JP5558006B2 (ja) | 2014-07-23 |
Family
ID=38475646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008558449A Expired - Fee Related JP5558006B2 (ja) | 2006-03-08 | 2007-02-23 | 基板に形成された熱処理構造用の方法および装置 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP1992013A2 (enExample) |
| JP (1) | JP5558006B2 (enExample) |
| KR (2) | KR101323222B1 (enExample) |
| WO (1) | WO2007103643A2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090120924A1 (en) * | 2007-11-08 | 2009-05-14 | Stephen Moffatt | Pulse train annealing method and apparatus |
| US9498845B2 (en) | 2007-11-08 | 2016-11-22 | Applied Materials, Inc. | Pulse train annealing method and apparatus |
| US9012315B2 (en) * | 2013-08-09 | 2015-04-21 | Taiwan Semiconductor Manufacturing Company Limited | Methods and systems for dopant activation using microwave radiation |
| KR102216675B1 (ko) * | 2014-06-12 | 2021-02-18 | 삼성디스플레이 주식회사 | 디스플레이 패널의 리페어 장치 및 디스플레이 패널의 리페어 방법 |
| EP3611757A1 (en) * | 2018-08-16 | 2020-02-19 | Laser Systems & Solutions of Europe | Method for forming a doped region on a semiconductor material |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5696835A (en) * | 1979-12-29 | 1981-08-05 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS5727035A (en) * | 1980-07-25 | 1982-02-13 | Hitachi Ltd | Manufacture of semiconductor device |
| GB8515814D0 (en) * | 1985-06-21 | 1985-07-24 | British Telecomm | Fabrication of optical waveguides |
| US4849371A (en) * | 1986-12-22 | 1989-07-18 | Motorola Inc. | Monocrystalline semiconductor buried layers for electrical contacts to semiconductor devices |
| US5182170A (en) * | 1989-09-05 | 1993-01-26 | Board Of Regents, The University Of Texas System | Method of producing parts by selective beam interaction of powder with gas phase reactant |
| JP3326654B2 (ja) * | 1994-05-02 | 2002-09-24 | ソニー株式会社 | 表示用半導体チップの製造方法 |
| US5956603A (en) * | 1998-08-27 | 1999-09-21 | Ultratech Stepper, Inc. | Gas immersion laser annealing method suitable for use in the fabrication of reduced-dimension integrated circuits |
| KR20000048110A (ko) * | 1998-12-15 | 2000-07-25 | 카네코 히사시 | 고체촬상장치 및 그 제조방법 |
| KR100338768B1 (ko) | 1999-10-25 | 2002-05-30 | 윤종용 | 산화막 제거방법 및 산화막 제거를 위한 반도체 제조 장치 |
| CN1194380C (zh) * | 2000-04-24 | 2005-03-23 | 北京师范大学 | 绝缘体上单晶硅(soi)材料的制造方法 |
| US6486066B2 (en) * | 2001-02-02 | 2002-11-26 | Matrix Semiconductor, Inc. | Method of generating integrated circuit feature layout for improved chemical mechanical polishing |
| US6902966B2 (en) * | 2001-10-25 | 2005-06-07 | Advanced Micro Devices, Inc. | Low-temperature post-dopant activation process |
| AU2002348835A1 (en) * | 2001-11-30 | 2003-06-10 | Koninklijke Philips Electronics N.V. | Method of manufacturing a semiconductor device |
| JP2003229568A (ja) * | 2002-02-04 | 2003-08-15 | Hitachi Ltd | 半導体装置の製造方法および半導体装置 |
| US7154066B2 (en) | 2002-11-06 | 2006-12-26 | Ultratech, Inc. | Laser scanning apparatus and methods for thermal processing |
| JP2004363355A (ja) * | 2003-06-05 | 2004-12-24 | Hitachi Ltd | 半導体装置及びその製造方法 |
| US7098155B2 (en) | 2003-09-29 | 2006-08-29 | Ultratech, Inc. | Laser thermal annealing of lightly doped silicon substrates |
| DE60330965D1 (de) * | 2003-10-17 | 2010-03-04 | Imec | Verfahren zur Herstellung eines Halbleitersubstrats mit einer Schichtstruktur von aktivierten Dotierungsstoffen |
| JP4700324B2 (ja) * | 2003-12-25 | 2011-06-15 | シルトロニック・ジャパン株式会社 | 半導体基板の製造方法 |
| JP2007535163A (ja) * | 2004-04-27 | 2007-11-29 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 溶融技術により有機半導体デバイスを形成する方法 |
-
2007
- 2007-02-23 KR KR1020107024018A patent/KR101323222B1/ko not_active Expired - Fee Related
- 2007-02-23 JP JP2008558449A patent/JP5558006B2/ja not_active Expired - Fee Related
- 2007-02-23 WO PCT/US2007/062672 patent/WO2007103643A2/en not_active Ceased
- 2007-02-23 KR KR1020087024646A patent/KR101113533B1/ko not_active Expired - Fee Related
- 2007-02-23 EP EP07757396A patent/EP1992013A2/en not_active Withdrawn
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