JP2010166035A5 - - Google Patents

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Publication number
JP2010166035A5
JP2010166035A5 JP2009280207A JP2009280207A JP2010166035A5 JP 2010166035 A5 JP2010166035 A5 JP 2010166035A5 JP 2009280207 A JP2009280207 A JP 2009280207A JP 2009280207 A JP2009280207 A JP 2009280207A JP 2010166035 A5 JP2010166035 A5 JP 2010166035A5
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JP
Japan
Prior art keywords
substrate
single crystal
semiconductor layer
crystal semiconductor
manufacturing
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JP2009280207A
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English (en)
Japanese (ja)
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JP5610759B2 (ja
JP2010166035A (ja
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Priority to JP2009280207A priority Critical patent/JP5610759B2/ja
Priority claimed from JP2009280207A external-priority patent/JP5610759B2/ja
Publication of JP2010166035A publication Critical patent/JP2010166035A/ja
Publication of JP2010166035A5 publication Critical patent/JP2010166035A5/ja
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Publication of JP5610759B2 publication Critical patent/JP5610759B2/ja
Expired - Fee Related legal-status Critical Current
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JP2009280207A 2008-12-15 2009-12-10 Ｓｏｉ基板の作製方法、半導体装置の作製方法 Expired - Fee Related JP5610759B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009280207A JP5610759B2 (ja) 2008-12-15 2009-12-10 Ｓｏｉ基板の作製方法、半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008318377 2008-12-15
JP2008318377 2008-12-15
JP2009280207A JP5610759B2 (ja) 2008-12-15 2009-12-10 Ｓｏｉ基板の作製方法、半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2010166035A JP2010166035A (ja) 2010-07-29
JP2010166035A5 true JP2010166035A5 (enExample) 2012-11-29
JP5610759B2 JP5610759B2 (ja) 2014-10-22

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JP2009280207A Expired - Fee Related JP5610759B2 (ja) 2008-12-15 2009-12-10 Ｓｏｉ基板の作製方法、半導体装置の作製方法

Country Status (5)

Country Link
US (1) US8394703B2 (enExample)
JP (1) JP5610759B2 (enExample)
KR (2) KR20100069595A (enExample)
CN (1) CN101752294B (enExample)
SG (2) SG182208A1 (enExample)

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FR2972564B1 (fr) * 2011-03-08 2016-11-04 S O I Tec Silicon On Insulator Tech Procédé de traitement d'une structure de type semi-conducteur sur isolant
TWI664731B (zh) * 2013-05-20 2019-07-01 半導體能源研究所股份有限公司 半導體裝置
US9425063B2 (en) * 2014-06-19 2016-08-23 Infineon Technologies Ag Method of reducing an impurity concentration in a semiconductor body, method of manufacturing a semiconductor device and semiconductor device
KR102524983B1 (ko) 2014-11-28 2023-04-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 모듈, 및 전자 기기
JP6850096B2 (ja) * 2015-09-24 2021-03-31 株式会社半導体エネルギー研究所 半導体装置の作製方法及び電子機器の作製方法
US10026843B2 (en) * 2015-11-30 2018-07-17 Taiwan Semiconductor Manufacturing Co., Ltd. Fin structure of semiconductor device, manufacturing method thereof, and manufacturing method of active region of semiconductor device
WO2017116905A1 (en) * 2015-12-30 2017-07-06 Mattson Technology, Inc. Gas flow control for millisecond anneal system
JP6579086B2 (ja) * 2016-11-15 2019-09-25 信越半導体株式会社 デバイス形成方法
US10971365B2 (en) * 2017-02-21 2021-04-06 Ev Group E. Thallner Gmbh Method and device for bonding substrates
KR102791109B1 (ko) 2019-06-14 2025-04-07 삼성전자주식회사 집적 회로 반도체 소자의 제조 방법

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