JP4843225B2 - 低濃度ドープされたシリコン基板のレーザ熱アニール - Google Patents

低濃度ドープされたシリコン基板のレーザ熱アニール Download PDF

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JP4843225B2
JP4843225B2 JP2005013255A JP2005013255A JP4843225B2 JP 4843225 B2 JP4843225 B2 JP 4843225B2 JP 2005013255 A JP2005013255 A JP 2005013255A JP 2005013255 A JP2005013255 A JP 2005013255A JP 4843225 B2 JP4843225 B2 JP 4843225B2
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substrate
radiation beam
preheating
radiation
annealing
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JP2005210129A (ja
JP2005210129A5 (enExample
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タルワー ソミット
エー マークル ディビット
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ウルトラテック インク
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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11C—FATTY ACIDS FROM FATS, OILS OR WAXES; CANDLES; FATS, OILS OR FATTY ACIDS BY CHEMICAL MODIFICATION OF FATS, OILS, OR FATTY ACIDS OBTAINED THEREFROM
    • C11C5/00—Candles
    • C11C5/006—Candles wicks, related accessories
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11C—FATTY ACIDS FROM FATS, OILS OR WAXES; CANDLES; FATS, OILS OR FATTY ACIDS BY CHEMICAL MODIFICATION OF FATS, OILS, OR FATTY ACIDS OBTAINED THEREFROM
    • C11C5/00—Candles
    • C11C5/002—Ingredients

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
JP2005013255A 2004-01-22 2005-01-20 低濃度ドープされたシリコン基板のレーザ熱アニール Expired - Fee Related JP4843225B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/762,861 US7098155B2 (en) 2003-09-29 2004-01-22 Laser thermal annealing of lightly doped silicon substrates
US10/762,861 2004-01-22

Related Child Applications (1)

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JP2009276412A Division JP5094825B2 (ja) 2004-01-22 2009-12-04 低濃度ドープされたシリコン基板のレーザ熱アニール

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JP2005210129A JP2005210129A (ja) 2005-08-04
JP2005210129A5 JP2005210129A5 (enExample) 2005-09-15
JP4843225B2 true JP4843225B2 (ja) 2011-12-21

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JP2005013255A Expired - Fee Related JP4843225B2 (ja) 2004-01-22 2005-01-20 低濃度ドープされたシリコン基板のレーザ熱アニール
JP2009276412A Expired - Fee Related JP5094825B2 (ja) 2004-01-22 2009-12-04 低濃度ドープされたシリコン基板のレーザ熱アニール

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JP2009276412A Expired - Fee Related JP5094825B2 (ja) 2004-01-22 2009-12-04 低濃度ドープされたシリコン基板のレーザ熱アニール

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JP (2) JP4843225B2 (enExample)
KR (1) KR100699211B1 (enExample)
TW (1) TWI297521B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101800404B1 (ko) 2008-09-17 2017-11-22 어플라이드 머티어리얼스, 인코포레이티드 기판의 어닐링시 열량 관리

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JP5073260B2 (ja) * 2006-09-29 2012-11-14 日立コンピュータ機器株式会社 レーザアニール装置及びレーザアニール方法
US20080206897A1 (en) * 2007-02-27 2008-08-28 Woo Sik Yoo Selective Depth Optical Processing
US20090114630A1 (en) * 2007-11-05 2009-05-07 Hawryluk Andrew M Minimization of surface reflectivity variations
US20100068898A1 (en) 2008-09-17 2010-03-18 Stephen Moffatt Managing thermal budget in annealing of substrates
US20100084744A1 (en) * 2008-10-06 2010-04-08 Zafiropoulo Arthur W Thermal processing of substrates with pre- and post-spike temperature control
JP5541693B2 (ja) * 2010-03-25 2014-07-09 株式会社日本製鋼所 レーザアニール装置
JP5614768B2 (ja) * 2010-03-25 2014-10-29 株式会社日本製鋼所 レーザ処理装置およびレーザ処理方法
US8014427B1 (en) 2010-05-11 2011-09-06 Ultratech, Inc. Line imaging systems and methods for laser annealing
JP5617421B2 (ja) * 2010-08-06 2014-11-05 Ｊｆｅスチール株式会社 電子ビーム照射装置
US8026519B1 (en) * 2010-10-22 2011-09-27 Ultratech, Inc. Systems and methods for forming a time-averaged line image
JP5786557B2 (ja) * 2011-08-25 2015-09-30 株式会社Sumco シミュレーションによるレーザースパイクアニールを施す際に生じる酸素析出物からの発生転位予測方法
US8546805B2 (en) * 2012-01-27 2013-10-01 Ultratech, Inc. Two-beam laser annealing with improved temperature performance
SG195515A1 (en) * 2012-06-11 2013-12-30 Ultratech Inc Laser annealing systems and methods with ultra-short dwell times
US9823121B2 (en) * 2014-10-14 2017-11-21 Kla-Tencor Corporation Method and system for measuring radiation and temperature exposure of wafers along a fabrication process line
JP6452564B2 (ja) * 2015-07-15 2019-01-16 住友重機械工業株式会社 レーザアニール装置及びレーザアニール方法
SG10201605683WA (en) * 2015-07-22 2017-02-27 Ultratech Inc High-efficiency line-forming optical systems and methods using a serrated spatial filter
EP3329510B1 (en) * 2015-07-29 2022-04-13 Applied Materials, Inc. Rotating substrate laser anneal
KR102772310B1 (ko) * 2019-09-09 2025-02-26 삼성디스플레이 주식회사 레이저 열처리 장치 및 레이저 빔 모니터링 시스템
WO2023282587A1 (ko) * 2021-07-06 2023-01-12 에이피에스리서치 주식회사 레이저 열처리장치 및 레이저 열처리방법
KR102753522B1 (ko) * 2021-12-02 2025-01-14 세메스 주식회사 기판 처리 장치 및 기판 처리 방법

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JPS5629323A (en) * 1979-08-17 1981-03-24 Nec Corp Two-wavelength laser surface treating apparatus
JPS57104217A (en) * 1980-12-22 1982-06-29 Toshiba Corp Surface heat treatment
JPS57183024A (en) * 1981-05-02 1982-11-11 Fujitsu Ltd Laser annealing
JPS57183023A (en) * 1981-05-02 1982-11-11 Fujitsu Ltd Laser annealing
JPS57111020A (en) * 1981-11-16 1982-07-10 Hitachi Ltd Manufacture of semiconductor device
JPS60117617A (ja) * 1983-11-30 1985-06-25 Fujitsu Ltd 半導体装置の製造方法
JPH01173707A (ja) * 1987-12-28 1989-07-10 Matsushita Electric Ind Co Ltd レーザアニール方法
JPH03266424A (ja) * 1990-03-16 1991-11-27 Sony Corp 半導体基板のアニール方法
JPH0521340A (ja) * 1991-07-10 1993-01-29 Ricoh Co Ltd 薄膜半導体装置、その製法および製造装置
JPH0883765A (ja) * 1994-07-14 1996-03-26 Sanyo Electric Co Ltd 多結晶半導体膜の製造方法
JP2000012461A (ja) * 1998-06-17 2000-01-14 Matsushita Electric Ind Co Ltd 結晶質半導体薄膜の作製方法
JP2000012484A (ja) * 1998-06-25 2000-01-14 Mitsubishi Electric Corp レーザアニール装置
JP3185881B2 (ja) * 1998-10-28 2001-07-11 日本電気株式会社 レーザ照射装置およびレーザ照射方法
JP2001156017A (ja) * 1999-11-29 2001-06-08 Semiconductor Energy Lab Co Ltd レーザー装置及びレーザー光を用いた熱処理方法並びに半導体装置の作製方法
US7015422B2 (en) * 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
JP2002217125A (ja) * 2001-01-23 2002-08-02 Sumitomo Heavy Ind Ltd 表面処理装置及び方法
JP2003347237A (ja) * 2002-05-30 2003-12-05 Mitsubishi Electric Corp 半導体装置の製造方法およびその製造装置
JP2004128421A (ja) * 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101800404B1 (ko) 2008-09-17 2017-11-22 어플라이드 머티어리얼스, 인코포레이티드 기판의 어닐링시 열량 관리
KR20170130616A (ko) * 2008-09-17 2017-11-28 어플라이드 머티어리얼스, 인코포레이티드 기판의 어닐링시 열량 관리
KR101868378B1 (ko) * 2008-09-17 2018-06-18 어플라이드 머티어리얼스, 인코포레이티드 기판의 어닐링시 열량 관리

Also Published As

Publication number Publication date
JP2005210129A (ja) 2005-08-04
JP2010109375A (ja) 2010-05-13
TW200529327A (en) 2005-09-01
KR100699211B1 (ko) 2007-03-27
TWI297521B (en) 2008-06-01
KR20050076768A (ko) 2005-07-27
JP5094825B2 (ja) 2012-12-12

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