JP2010092943A - 配線基板及びその製造方法 - Google Patents
配線基板及びその製造方法 Download PDFInfo
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- JP2010092943A JP2010092943A JP2008259016A JP2008259016A JP2010092943A JP 2010092943 A JP2010092943 A JP 2010092943A JP 2008259016 A JP2008259016 A JP 2008259016A JP 2008259016 A JP2008259016 A JP 2008259016A JP 2010092943 A JP2010092943 A JP 2010092943A
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- 239000002184 metal Substances 0.000 claims abstract description 354
- 230000002093 peripheral effect Effects 0.000 claims abstract description 44
- 239000010410 layer Substances 0.000 claims description 507
- 238000000034 method Methods 0.000 claims description 114
- 238000005530 etching Methods 0.000 claims description 54
- 239000011241 protective layer Substances 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 10
- 238000010030 laminating Methods 0.000 claims description 5
- 239000003755 preservative agent Substances 0.000 claims description 5
- 230000002335 preservative effect Effects 0.000 claims description 5
- 230000032798 delamination Effects 0.000 abstract description 19
- 239000004020 conductor Substances 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 description 148
- 239000000758 substrate Substances 0.000 description 17
- 239000007769 metal material Substances 0.000 description 16
- 238000012986 modification Methods 0.000 description 15
- 230000004048 modification Effects 0.000 description 15
- 229910000679 solder Inorganic materials 0.000 description 13
- 238000009713 electroplating Methods 0.000 description 10
- 239000011347 resin Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 4
- 229910020816 Sn Pb Inorganic materials 0.000 description 3
- 229910020922 Sn-Pb Inorganic materials 0.000 description 3
- 229910008783 Sn—Pb Inorganic materials 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- BYUKRKALWSMYBW-UHFFFAOYSA-N O.[F] Chemical compound O.[F] BYUKRKALWSMYBW-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
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Abstract
【解決手段】金属層41,42からなる電極パッド25と、金属層42の面42A側に位置する部分の電極パッド25と接続される導電パターン27と、電極パッド25及び導電パターン27を内設する絶縁層21と、を有しており、絶縁層21は、面42Aとは反対側に位置する金属層41の面41Aの外周部を覆うように配置する。
【選択図】図2
Description
図2は、本発明の第1の実施の形態に係る半導体装置の断面図である。
図18は、本発明の第2の実施の形態に係る半導体装置の断面図である。図18において、第1の実施の形態の半導体装置10と同一構成部分には同一符号を付す。
図40は、本発明の第3の実施の形態に係る半導体装置の断面図である。図40において、第2の実施の形態の半導体装置70と同一構成部分には同一符号を付す。
図50は、本発明の第4の実施の形態に係る半導体装置の断面図である。図50において、第1の実施の形態の半導体装置10と同一構成部分には同一符号を付す。
さらに、1層の金属層により電極パッド98を構成することにより、配線基板96のコストを低減することができる。
11,66,71,86,96,110 配線基板
12 外部接続端子
13 電子部品
21,22,23 絶縁層
21A,21B,22A,22B,23A,23B,41A,42A,55A,61A,75A,91A,98A,98B,101A 面
25,73,88,98 電極パッド
27,28 導電パターン
31 ビア
32 外部接続用パッド
32A 接続面
34 ソルダーレジスト層
34A,37,38,47,52,56A 開口部
41,42,75 金属層
44,48 ビア部
45,49 配線部
55 支持板
56 レジスト膜
58,62,81−1,91−1,101−1 突出部
61 高さ調整層
78 保護層
81,91,101 突出部用金属層
89 凹部
111 OSP膜
B 距離
Claims (17)
- 電極パッドと、
前記電極パッドの第1の面と接続される導電パターンと、
前記電極パッド及び前記導電パターンを内設する絶縁層と、を有しており、
前記絶縁層は、前記第1の面とは反対側に位置する前記電極パッドの第2の面の外周部を覆うように配置されていることを特徴とする配線基板。 - 前記絶縁層は、前記第2の面の一部を露出する開口部を有しており、
前記開口部は、前記電極パッドから離間するにつれて幅広形状とされていることを特徴とする請求項1記載の配線基板。 - 前記電極パッドは、前記開口部から露出され、前記導電パターンを構成する金属とは異なる金属により構成された第1の金属層と、前記第1の金属層に設けられ、前記導電パターンを構成する金属とは異なる金属により構成された第2の金属層と、前記第2の金属層に設けられ、前記導電パターンを構成する金属と同じ金属により構成された第3の金属層と、を有しており、
前記第3の金属層は、前記導電パターンと接続されることを特徴とする請求項1または2記載の配線基板。 - 前記第2の金属層の外周側面の位置を、前記第1及び第3の金属層の外周側面の位置よりも内側に配置したことを特徴とする請求項3記載の配線基板。
- 前記電極パッドは、前記導電パターンを構成する金属と同じ金属により構成されており、
前記開口部に露出された部分の前記電極パッドの前記第2の面を覆うOSP(Organic Solderbility Preservative)膜を設けたことを特徴とする請求項1または2記載の配線基板。 - 第1の金属により構成された支持板上に電極パッドを形成する電極パッド形成工程と、
前記支持板をエッチングすることで、前記電極パッドと対向する部分の前記支持板に、前記電極パッドと接触すると共に、前記支持板と対向する側の前記電極パッドの面の外周部を露出する突出部を形成する突出部形成工程と、
前記電極パッド、前記突出部、及び前記突出部が形成された側の前記支持板の面を覆う絶縁層を形成する絶縁層形成工程と、
前記絶縁層上に、前記電極パッドと接続される導電パターンを形成する導電パターン形成工程と、
前記導電パターン形成工程後に、前記突出部が形成された前記支持板をエッチングにより除去することで、前記絶縁層に、前記支持板と対向する側の前記電極パッドの面の一部を露出すると共に、前記突出部に対応する形状の開口部を形成する支持板除去工程と、を含むことを特徴とする配線基板の製造方法。 - 前記突出部形成工程では、前記突出部の形状が、前記電極パッドから前記支持板に向かうにつれて、幅広形状となるように、前記支持板をエッチングすることを特徴とする請求項6記載の配線基板の製造方法。
- 前記電極パッド形成工程は、前記第1の金属とは異なる金属により構成された第1の金属層を形成する第1の金属層形成工程と、
前記第1の金属層に、前記第1の金属とは異なる金属により構成された第2の金属層を形成する第2の金属層形成工程と、を有し、
前記突出部形成工程では、前記電極パッドをマスクとして、前記第1の金属を選択的にエッチングするエッチング液により、前記支持板をエッチングすることを特徴とする請求項6または7記載の配線基板の製造方法。 - 前記電極パッド形成工程は、前記第2の金属層形成工程後に、前記第2の金属層の面に、前記第1の金属により構成された第3の金属層を形成する第3の金属層形成工程をさらに有しており、
前記第3の金属層形成工程では、前記突出部形成工程後に前記第3の金属層が前記第2の金属層の面を覆う厚さとなるように、前記第3の金属層を形成することを特徴とする請求項8記載の配線基板の製造方法。 - 前記電極パッド形成工程は、前記第2の金属層形成工程後に、前記第2の金属層の面に、前記第1の金属により構成された第3の金属層を形成する第3の金属層形成工程と、前記第3の金属層に、前記突出部形成工程において前記支持板をエッチングする際に前記第3の金属層がエッチングされることを防止する保護層を形成する保護層形成工程と、をさらに有しており、
前記突出部形成工程と前記絶縁層形成工程との間に、前記保護層を除去する保護層除去工程を設けたことを特徴とする請求項8記載の配線基板の製造方法。 - 前記電極パッド形成工程の前に、前記電極パッドの形成領域に対応する部分の前記支持板に、前記第1の金属により構成された高さ調整層を形成する高さ調整層形成工程を設け、
前記支持板除去工程では、前記第1の金属を選択的にエッチングするエッチング液により、前記支持板と共に、前記高さ調整層を除去することを特徴とする請求項6ないし10のうち、いずれか1項記載の配線基板の製造方法。 - 第1の金属により構成された支持板上に、突出部用金属層を形成する突出部用金属層形成工程と、
前記突出部用金属層上に、電極パッドを形成する電極パッド形成工程と、
前記突出部用金属層をエッチングして突出部を形成すると共に、該突出部と接触する前記電極パッドの面の外周部を露出させる突出部形成工程と、
前記突出部形成工程後に、前記突出部、前記電極パッド、及び前記突出部が形成された側の前記支持板の面を覆う絶縁層を形成する絶縁層形成工程と、
前記絶縁層上に、前記電極パッドと接続される導電パターンを形成する導電パターン形成工程と、
前記導電パターン形成工程後に、前記支持板をエッチングにより除去する支持板除去工程と、
前記支持板除去工程後に、前記突出部を除去することにより、前記絶縁層に、前記突出部と接触する側の前記電極パッドの面の一部を露出すると共に、突出部の形状に対応する形状の開口部を形成する突出部除去工程と、を含むことを特徴とする配線基板の製造方法。 - 前記突出部用金属層は、前記第1の金属とは異なる導電性を有した材料により形成されることを特徴とする請求項12記載の配線基板の製造方法。
- 前記電極パッドは、前記第1の金属と同じ金属により形成されることを特徴とする請求項12または13記載の配線基板の製造方法。
- 前記電極パッド形成工程では、前記突出部用金属層上に、前記第1の金属と異なる金属により形成された第1の金属層と、前記第1の金属と異なる金属により形成された第2の金属層と、前記第1の金属により形成された第3の金属層と、を順次積層して電極パッドを形成することを特徴とする請求項12または13記載の配線基板の製造方法。
- 前記電極パッド形成工程では、前記突出部用金属層と前記第2の金属層とを、同じ金属により形成することを特徴とする請求項15記載の配線基板の製造方法。
- 前記突出部除去工程後に、OSP(Organic Solderbility Preservative)処理を行うことにより、前記絶縁層から露出された部分の前記電極パッドにOSP(Organic Solderbility Preservative)膜を形成するOSP膜形成工程をさらに設けたことを特徴とする請求項12記載の配線基板の製造方法。
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