JP2010045331A - ボディ・タイの領域に効果的に直接コンタクトを設けるプロセスフロー - Google Patents

ボディ・タイの領域に効果的に直接コンタクトを設けるプロセスフロー Download PDF

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Publication number
JP2010045331A
JP2010045331A JP2009123064A JP2009123064A JP2010045331A JP 2010045331 A JP2010045331 A JP 2010045331A JP 2009123064 A JP2009123064 A JP 2009123064A JP 2009123064 A JP2009123064 A JP 2009123064A JP 2010045331 A JP2010045331 A JP 2010045331A
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Japan
Prior art keywords
body tie
contact
process flow
sti
direct
Prior art date
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JP2009123064A
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English (en)
Japanese (ja)
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JP2010045331A5 (https=
Inventor
Paul Fechner
ポール・フェクナー
Bradley Larsen
ブラッドリー・ラーセン
Gregor Dougal
グレガー・ドゥーガル
Keith Golke
キース・ゴルケ
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Honeywell International Inc
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Honeywell International Inc
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Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of JP2010045331A publication Critical patent/JP2010045331A/ja
Publication of JP2010045331A5 publication Critical patent/JP2010045331A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H10D30/6711—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect by using electrodes contacting the supplementary regions or layers

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Element Separation (AREA)
JP2009123064A 2008-07-22 2009-05-21 ボディ・タイの領域に効果的に直接コンタクトを設けるプロセスフロー Pending JP2010045331A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/177,332 US7964897B2 (en) 2008-07-22 2008-07-22 Direct contact to area efficient body tie process flow

Publications (2)

Publication Number Publication Date
JP2010045331A true JP2010045331A (ja) 2010-02-25
JP2010045331A5 JP2010045331A5 (https=) 2012-07-05

Family

ID=41256059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009123064A Pending JP2010045331A (ja) 2008-07-22 2009-05-21 ボディ・タイの領域に効果的に直接コンタクトを設けるプロセスフロー

Country Status (4)

Country Link
US (1) US7964897B2 (https=)
EP (1) EP2148362A1 (https=)
JP (1) JP2010045331A (https=)
TW (1) TW201013791A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8680617B2 (en) * 2009-10-06 2014-03-25 International Business Machines Corporation Split level shallow trench isolation for area efficient body contacts in SOI MOSFETS
US9818652B1 (en) 2016-04-27 2017-11-14 Globalfoundries Inc. Commonly-bodied field-effect transistors

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10256556A (ja) * 1997-03-14 1998-09-25 Toshiba Corp 半導体装置及びその製造方法
JP2001077368A (ja) * 1999-09-03 2001-03-23 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2001339071A (ja) * 2000-03-22 2001-12-07 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2002064206A (ja) * 2000-06-09 2002-02-28 Toshiba Corp 半導体装置及びその製造方法
JP2006066691A (ja) * 2004-08-27 2006-03-09 Renesas Technology Corp 半導体装置およびその製造方法

Family Cites Families (23)

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Publication number Priority date Publication date Assignee Title
JPS5727070A (en) 1980-07-25 1982-02-13 Toshiba Corp Mos type semiconductor device
JPS62104173A (ja) 1985-10-31 1987-05-14 Fujitsu Ltd 半導体装置
US4786955A (en) 1987-02-24 1988-11-22 General Electric Company Semiconductor device with source and drain depth extenders and a method of making the same
US5145802A (en) 1991-11-12 1992-09-08 United Technologies Corporation Method of making SOI circuit with buried connectors
US5767549A (en) 1996-07-03 1998-06-16 International Business Machines Corporation SOI CMOS structure
GB9716657D0 (en) 1997-08-07 1997-10-15 Zeneca Ltd Chemical compounds
DE69925078T2 (de) 1998-08-29 2006-03-09 International Business Machines Corp. SOI-Transistor mit einem Substrat-Kontakt und Verfahren zu dessen Herstellung
KR100343288B1 (ko) 1999-10-25 2002-07-15 윤종용 에스오아이 모스 트랜지스터의 플로팅 바디 효과를제거하기 위한 에스오아이 반도체 집적회로 및 그 제조방법
US6521959B2 (en) 1999-10-25 2003-02-18 Samsung Electronics Co., Ltd. SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same
JP2001230315A (ja) 2000-02-17 2001-08-24 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2002033484A (ja) 2000-07-18 2002-01-31 Mitsubishi Electric Corp 半導体装置
AU2001288845A1 (en) 2000-09-19 2002-04-02 Motorola, Inc. Body-tied silicon on insulator semiconductor device structure and method therefor
JP4676069B2 (ja) 2001-02-07 2011-04-27 パナソニック株式会社 半導体装置の製造方法
JP5000057B2 (ja) 2001-07-17 2012-08-15 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
KR100389929B1 (ko) 2001-07-28 2003-07-04 삼성전자주식회사 트렌치 소자분리막을 구비하는 ｓｏｉ 소자 및 그 제조 방법
US6620656B2 (en) 2001-12-19 2003-09-16 Motorola, Inc. Method of forming body-tied silicon on insulator semiconductor device
US6960810B2 (en) 2002-05-30 2005-11-01 Honeywell International Inc. Self-aligned body tie for a partially depleted SOI device structure
JP4154578B2 (ja) 2002-12-06 2008-09-24 日本電気株式会社 半導体装置及びその製造方法
US6864152B1 (en) 2003-05-20 2005-03-08 Lsi Logic Corporation Fabrication of trenches with multiple depths on the same substrate
JP4811901B2 (ja) 2004-06-03 2011-11-09 ルネサスエレクトロニクス株式会社 半導体装置
US7179717B2 (en) 2005-05-25 2007-02-20 Micron Technology, Inc. Methods of forming integrated circuit devices
US7446001B2 (en) 2006-02-08 2008-11-04 Freescale Semiconductors, Inc. Method for forming a semiconductor-on-insulator (SOI) body-contacted device with a portion of drain region removed
US7732287B2 (en) 2006-05-02 2010-06-08 Honeywell International Inc. Method of forming a body-tie

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10256556A (ja) * 1997-03-14 1998-09-25 Toshiba Corp 半導体装置及びその製造方法
JP2001077368A (ja) * 1999-09-03 2001-03-23 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2001339071A (ja) * 2000-03-22 2001-12-07 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2002064206A (ja) * 2000-06-09 2002-02-28 Toshiba Corp 半導体装置及びその製造方法
JP2006066691A (ja) * 2004-08-27 2006-03-09 Renesas Technology Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
US20100019320A1 (en) 2010-01-28
US7964897B2 (en) 2011-06-21
TW201013791A (en) 2010-04-01
EP2148362A1 (en) 2010-01-27

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