TW201013791A - Direct contact to area efficient body tie process flow - Google Patents

Direct contact to area efficient body tie process flow Download PDF

Info

Publication number
TW201013791A
TW201013791A TW098116945A TW98116945A TW201013791A TW 201013791 A TW201013791 A TW 201013791A TW 098116945 A TW098116945 A TW 098116945A TW 98116945 A TW98116945 A TW 98116945A TW 201013791 A TW201013791 A TW 201013791A
Authority
TW
Taiwan
Prior art keywords
contact
layer
source
binding point
point
Prior art date
Application number
TW098116945A
Other languages
English (en)
Chinese (zh)
Inventor
Paul Fechner
Bradley Larsen
Keith Golke
Gregor Dougal
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Publication of TW201013791A publication Critical patent/TW201013791A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H10D30/6711—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect by using electrodes contacting the supplementary regions or layers

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Element Separation (AREA)
TW098116945A 2008-07-22 2009-05-21 Direct contact to area efficient body tie process flow TW201013791A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/177,332 US7964897B2 (en) 2008-07-22 2008-07-22 Direct contact to area efficient body tie process flow

Publications (1)

Publication Number Publication Date
TW201013791A true TW201013791A (en) 2010-04-01

Family

ID=41256059

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098116945A TW201013791A (en) 2008-07-22 2009-05-21 Direct contact to area efficient body tie process flow

Country Status (4)

Country Link
US (1) US7964897B2 (https=)
EP (1) EP2148362A1 (https=)
JP (1) JP2010045331A (https=)
TW (1) TW201013791A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8680617B2 (en) * 2009-10-06 2014-03-25 International Business Machines Corporation Split level shallow trench isolation for area efficient body contacts in SOI MOSFETS
US9818652B1 (en) 2016-04-27 2017-11-14 Globalfoundries Inc. Commonly-bodied field-effect transistors

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5727070A (en) 1980-07-25 1982-02-13 Toshiba Corp Mos type semiconductor device
JPS62104173A (ja) 1985-10-31 1987-05-14 Fujitsu Ltd 半導体装置
US4786955A (en) 1987-02-24 1988-11-22 General Electric Company Semiconductor device with source and drain depth extenders and a method of making the same
US5145802A (en) 1991-11-12 1992-09-08 United Technologies Corporation Method of making SOI circuit with buried connectors
US5767549A (en) 1996-07-03 1998-06-16 International Business Machines Corporation SOI CMOS structure
JPH10256556A (ja) * 1997-03-14 1998-09-25 Toshiba Corp 半導体装置及びその製造方法
GB9716657D0 (en) 1997-08-07 1997-10-15 Zeneca Ltd Chemical compounds
DE69925078T2 (de) 1998-08-29 2006-03-09 International Business Machines Corp. SOI-Transistor mit einem Substrat-Kontakt und Verfahren zu dessen Herstellung
JP2001077368A (ja) * 1999-09-03 2001-03-23 Mitsubishi Electric Corp 半導体装置及びその製造方法
KR100343288B1 (ko) 1999-10-25 2002-07-15 윤종용 에스오아이 모스 트랜지스터의 플로팅 바디 효과를제거하기 위한 에스오아이 반도체 집적회로 및 그 제조방법
US6521959B2 (en) 1999-10-25 2003-02-18 Samsung Electronics Co., Ltd. SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same
JP2001230315A (ja) 2000-02-17 2001-08-24 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2001339071A (ja) * 2000-03-22 2001-12-07 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2002064206A (ja) * 2000-06-09 2002-02-28 Toshiba Corp 半導体装置及びその製造方法
JP2002033484A (ja) 2000-07-18 2002-01-31 Mitsubishi Electric Corp 半導体装置
AU2001288845A1 (en) 2000-09-19 2002-04-02 Motorola, Inc. Body-tied silicon on insulator semiconductor device structure and method therefor
JP4676069B2 (ja) 2001-02-07 2011-04-27 パナソニック株式会社 半導体装置の製造方法
JP5000057B2 (ja) 2001-07-17 2012-08-15 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
KR100389929B1 (ko) 2001-07-28 2003-07-04 삼성전자주식회사 트렌치 소자분리막을 구비하는 ｓｏｉ 소자 및 그 제조 방법
US6620656B2 (en) 2001-12-19 2003-09-16 Motorola, Inc. Method of forming body-tied silicon on insulator semiconductor device
US6960810B2 (en) 2002-05-30 2005-11-01 Honeywell International Inc. Self-aligned body tie for a partially depleted SOI device structure
JP4154578B2 (ja) 2002-12-06 2008-09-24 日本電気株式会社 半導体装置及びその製造方法
US6864152B1 (en) 2003-05-20 2005-03-08 Lsi Logic Corporation Fabrication of trenches with multiple depths on the same substrate
JP4811901B2 (ja) 2004-06-03 2011-11-09 ルネサスエレクトロニクス株式会社 半導体装置
JP2006066691A (ja) * 2004-08-27 2006-03-09 Renesas Technology Corp 半導体装置およびその製造方法
US7179717B2 (en) 2005-05-25 2007-02-20 Micron Technology, Inc. Methods of forming integrated circuit devices
US7446001B2 (en) 2006-02-08 2008-11-04 Freescale Semiconductors, Inc. Method for forming a semiconductor-on-insulator (SOI) body-contacted device with a portion of drain region removed
US7732287B2 (en) 2006-05-02 2010-06-08 Honeywell International Inc. Method of forming a body-tie

Also Published As

Publication number Publication date
JP2010045331A (ja) 2010-02-25
US20100019320A1 (en) 2010-01-28
US7964897B2 (en) 2011-06-21
EP2148362A1 (en) 2010-01-27

Similar Documents

Publication Publication Date Title
TWI596711B (zh) 塊體以及絕緣層覆矽半導體裝置之協整
US7838370B2 (en) Highly selective liners for semiconductor fabrication
TWI646654B (zh) 製造高電阻率絕緣體上半導體底材之方法
TWI690025B (zh) 絕緣體上半導體基底、其形成方法以及積體電路
TW200849481A (en) Performance enhancement on both NMOSFET and PMOSFET using self-aligned dual stressed films
JP5616823B2 (ja) 半導体装置およびその製造方法
CN104617101A (zh) 具有多个半导体器件层的半导体结构的系统和方法
JP4846167B2 (ja) 半導体装置の製造方法
CN101241913B (zh) 互补型金属氧化物半导体装置、半导体装置及其制造方法
CN106663684B (zh) 具有自对准背侧特征的半导体器件
TW200807690A (en) Semiconductor device having a compressed device isolation structure
TW201013791A (en) Direct contact to area efficient body tie process flow
JP2011108971A (ja) 半導体装置およびその製造方法
KR100847089B1 (ko) 반도체장치 및 그 제조 방법
JP2010098157A (ja) 半導体装置の製造方法
KR100943500B1 (ko) 반도체 소자 동시 제조 방법
TW201431007A (zh) 半導體裝置結構及形成互補式金屬氧化物半導體積體電路結構之方法
KR20010065698A (ko) 반도체소자의 듀얼게이트 형성방법
US11355401B1 (en) Field effect transistor
JP2005286141A (ja) 半導体装置の製造方法
KR101012240B1 (ko) 반도체 소자의 제조 방법
TW200845233A (en) Method of manufacturing a semiconductor device and semiconductor device
KR100827531B1 (ko) 반도체 소자 및 그 제조 방법
KR100466025B1 (ko) 에스.티.아이(ｓｔｉ) 구조를 가지는 반도체 소자 제조 방법
US20080138960A1 (en) Method of manufacturing a stack-type semiconductor device