JP2010045331A5 - - Google Patents

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Publication number
JP2010045331A5
JP2010045331A5 JP2009123064A JP2009123064A JP2010045331A5 JP 2010045331 A5 JP2010045331 A5 JP 2010045331A5 JP 2009123064 A JP2009123064 A JP 2009123064A JP 2009123064 A JP2009123064 A JP 2009123064A JP 2010045331 A5 JP2010045331 A5 JP 2010045331A5
Authority
JP
Japan
Prior art keywords
depth
body tie
contact
semiconductor device
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009123064A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010045331A (ja
Filing date
Publication date
Priority claimed from US12/177,332 external-priority patent/US7964897B2/en
Application filed filed Critical
Publication of JP2010045331A publication Critical patent/JP2010045331A/ja
Publication of JP2010045331A5 publication Critical patent/JP2010045331A5/ja
Pending legal-status Critical Current

Links

JP2009123064A 2008-07-22 2009-05-21 ボディ・タイの領域に効果的に直接コンタクトを設けるプロセスフロー Pending JP2010045331A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/177,332 US7964897B2 (en) 2008-07-22 2008-07-22 Direct contact to area efficient body tie process flow

Publications (2)

Publication Number Publication Date
JP2010045331A JP2010045331A (ja) 2010-02-25
JP2010045331A5 true JP2010045331A5 (https=) 2012-07-05

Family

ID=41256059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009123064A Pending JP2010045331A (ja) 2008-07-22 2009-05-21 ボディ・タイの領域に効果的に直接コンタクトを設けるプロセスフロー

Country Status (4)

Country Link
US (1) US7964897B2 (https=)
EP (1) EP2148362A1 (https=)
JP (1) JP2010045331A (https=)
TW (1) TW201013791A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8680617B2 (en) * 2009-10-06 2014-03-25 International Business Machines Corporation Split level shallow trench isolation for area efficient body contacts in SOI MOSFETS
US9818652B1 (en) 2016-04-27 2017-11-14 Globalfoundries Inc. Commonly-bodied field-effect transistors

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5727070A (en) 1980-07-25 1982-02-13 Toshiba Corp Mos type semiconductor device
JPS62104173A (ja) 1985-10-31 1987-05-14 Fujitsu Ltd 半導体装置
US4786955A (en) 1987-02-24 1988-11-22 General Electric Company Semiconductor device with source and drain depth extenders and a method of making the same
US5145802A (en) 1991-11-12 1992-09-08 United Technologies Corporation Method of making SOI circuit with buried connectors
US5767549A (en) 1996-07-03 1998-06-16 International Business Machines Corporation SOI CMOS structure
JPH10256556A (ja) * 1997-03-14 1998-09-25 Toshiba Corp 半導体装置及びその製造方法
GB9716657D0 (en) 1997-08-07 1997-10-15 Zeneca Ltd Chemical compounds
DE69925078T2 (de) 1998-08-29 2006-03-09 International Business Machines Corp. SOI-Transistor mit einem Substrat-Kontakt und Verfahren zu dessen Herstellung
JP2001077368A (ja) * 1999-09-03 2001-03-23 Mitsubishi Electric Corp 半導体装置及びその製造方法
KR100343288B1 (ko) 1999-10-25 2002-07-15 윤종용 에스오아이 모스 트랜지스터의 플로팅 바디 효과를제거하기 위한 에스오아이 반도체 집적회로 및 그 제조방법
US6521959B2 (en) 1999-10-25 2003-02-18 Samsung Electronics Co., Ltd. SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same
JP2001230315A (ja) 2000-02-17 2001-08-24 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2001339071A (ja) * 2000-03-22 2001-12-07 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2002064206A (ja) * 2000-06-09 2002-02-28 Toshiba Corp 半導体装置及びその製造方法
JP2002033484A (ja) 2000-07-18 2002-01-31 Mitsubishi Electric Corp 半導体装置
AU2001288845A1 (en) 2000-09-19 2002-04-02 Motorola, Inc. Body-tied silicon on insulator semiconductor device structure and method therefor
JP4676069B2 (ja) 2001-02-07 2011-04-27 パナソニック株式会社 半導体装置の製造方法
JP5000057B2 (ja) 2001-07-17 2012-08-15 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
KR100389929B1 (ko) 2001-07-28 2003-07-04 삼성전자주식회사 트렌치 소자분리막을 구비하는 ｓｏｉ 소자 및 그 제조 방법
US6620656B2 (en) 2001-12-19 2003-09-16 Motorola, Inc. Method of forming body-tied silicon on insulator semiconductor device
US6960810B2 (en) 2002-05-30 2005-11-01 Honeywell International Inc. Self-aligned body tie for a partially depleted SOI device structure
JP4154578B2 (ja) 2002-12-06 2008-09-24 日本電気株式会社 半導体装置及びその製造方法
US6864152B1 (en) 2003-05-20 2005-03-08 Lsi Logic Corporation Fabrication of trenches with multiple depths on the same substrate
JP4811901B2 (ja) 2004-06-03 2011-11-09 ルネサスエレクトロニクス株式会社 半導体装置
JP2006066691A (ja) * 2004-08-27 2006-03-09 Renesas Technology Corp 半導体装置およびその製造方法
US7179717B2 (en) 2005-05-25 2007-02-20 Micron Technology, Inc. Methods of forming integrated circuit devices
US7446001B2 (en) 2006-02-08 2008-11-04 Freescale Semiconductors, Inc. Method for forming a semiconductor-on-insulator (SOI) body-contacted device with a portion of drain region removed
US7732287B2 (en) 2006-05-02 2010-06-08 Honeywell International Inc. Method of forming a body-tie

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