JP2010028109A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2010028109A
JP2010028109A JP2009142509A JP2009142509A JP2010028109A JP 2010028109 A JP2010028109 A JP 2010028109A JP 2009142509 A JP2009142509 A JP 2009142509A JP 2009142509 A JP2009142509 A JP 2009142509A JP 2010028109 A JP2010028109 A JP 2010028109A
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Japan
Prior art keywords
film
terminal
circuit
semiconductor
connection portions
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JP2009142509A
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Japanese (ja)
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JP2010028109A5 (https=
Inventor
Osamu Fukuoka
修 福岡
Hideaki Shishido
英明 宍戸
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2009142509A priority Critical patent/JP2010028109A/ja
Publication of JP2010028109A publication Critical patent/JP2010028109A/ja
Publication of JP2010028109A5 publication Critical patent/JP2010028109A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/60—Arrangements for protection of devices protecting against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
JP2009142509A 2008-06-17 2009-06-15 半導体装置 Withdrawn JP2010028109A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009142509A JP2010028109A (ja) 2008-06-17 2009-06-15 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008158256 2008-06-17
JP2009142509A JP2010028109A (ja) 2008-06-17 2009-06-15 半導体装置

Publications (2)

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JP2010028109A true JP2010028109A (ja) 2010-02-04
JP2010028109A5 JP2010028109A5 (https=) 2012-07-05

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JP2009142509A Withdrawn JP2010028109A (ja) 2008-06-17 2009-06-15 半導体装置

Country Status (4)

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US (1) US8363365B2 (https=)
JP (1) JP2010028109A (https=)
KR (1) KR101616937B1 (https=)
TW (1) TWI489614B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012231133A (ja) * 2011-04-13 2012-11-22 Semiconductor Energy Lab Co Ltd 酸化物半導体膜、及び半導体装置
JP2016178321A (ja) * 2010-06-18 2016-10-06 株式会社半導体エネルギー研究所 半導体装置
JP2016181616A (ja) * 2015-03-24 2016-10-13 ラピスセミコンダクタ株式会社 半導体素子、半導体装置および半導体素子のレイアウト方法
JPWO2015189732A1 (ja) * 2014-06-09 2017-04-20 株式会社半導体エネルギー研究所 撮像装置
JP2018067705A (ja) * 2016-09-27 2018-04-26 アナログ・ディヴァイシス・グローバル・アンリミテッド・カンパニー 電気的過剰ストレス検出デバイス
WO2018116864A1 (ja) * 2016-12-22 2018-06-28 ソニーセミコンダクタソリューションズ株式会社 撮像パネル、および撮像パネルの製造方法、レントゲン装置、並びに撮像装置
WO2018135220A1 (ja) * 2017-01-19 2018-07-26 日立オートモティブシステムズ株式会社 電子装置
WO2020080295A1 (ja) * 2018-10-18 2020-04-23 富士電機株式会社 半導体装置および製造方法
WO2020138218A1 (ja) * 2018-12-28 2020-07-02 富士電機株式会社 半導体装置および製造方法
US11668734B2 (en) 2018-03-26 2023-06-06 Analog Devices International Unlimited Company Spark gap structures for detection and protection against electrical overstress events

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JP2010521058A (ja) * 2006-09-24 2010-06-17 ショッキング テクノロジーズ，インコーポレイテッド ステップ電圧応答を有する電圧切り換え可能な誘電体材料の組成及び該誘電体材料の製造方法
JP5448584B2 (ja) * 2008-06-25 2014-03-19 株式会社半導体エネルギー研究所 半導体装置
US8174047B2 (en) 2008-07-10 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5728171B2 (ja) 2009-06-29 2015-06-03 株式会社半導体エネルギー研究所 半導体装置
US9320135B2 (en) 2010-02-26 2016-04-19 Littelfuse, Inc. Electric discharge protection for surface mounted and embedded components
US9082622B2 (en) 2010-02-26 2015-07-14 Littelfuse, Inc. Circuit elements comprising ferroic materials
US9224728B2 (en) 2010-02-26 2015-12-29 Littelfuse, Inc. Embedded protection against spurious electrical events
WO2011137261A1 (en) * 2010-04-28 2011-11-03 Shocking Technologies, Inc. Embedded protection against spurious electrical events
US8698480B2 (en) * 2011-06-27 2014-04-15 Micron Technology, Inc. Reference current distribution
US8698137B2 (en) 2011-09-14 2014-04-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8674352B2 (en) * 2012-02-28 2014-03-18 Texas Instruments Incorporated Overvoltage testing apparatus
HK1214832A1 (zh) 2012-11-28 2016-08-05 恩格姆生物制药公司 用於代謝病症和疾病治療的組合物和方法
US9273107B2 (en) 2012-12-27 2016-03-01 Ngm Biopharmaceuticals, Inc. Uses and methods for modulating bile acid homeostasis and treatment of bile acid disorders and diseases
MX383664B (es) 2012-12-27 2025-03-14 Ngm Biopharmaceuticals Inc Uso de un péptido para modular la homeostasis de los ácidos biliares o tratamiento de una enfermedad relacionada con los ácidos biliares.
WO2015065897A1 (en) 2013-10-28 2015-05-07 Ngm Biopharmaceuticals, Inc. Cancer models and associated methods
US10398758B2 (en) 2014-05-28 2019-09-03 Ngm Biopharmaceuticals, Inc. Compositions comprising variants of FGF19 polypeptides and uses thereof for the treatment of hyperglycemic conditions
WO2015195509A2 (en) 2014-06-16 2015-12-23 Ngm Biopharmaceuticals, Inc. Methods and uses for modulating bile acid homeostasis and treatment of bile acid disorders and diseases
CN114129709A (zh) 2014-10-23 2022-03-04 恩格姆生物制药公司 包含肽变异体的药物组合物及其使用方法
US10434144B2 (en) 2014-11-07 2019-10-08 Ngm Biopharmaceuticals, Inc. Methods for treatment of bile acid-related disorders and prediction of clinical sensitivity to treatment of bile acid-related disorders
KR102632497B1 (ko) * 2018-08-08 2024-02-02 삼성전자주식회사 저항 구조물을 구비하는 반도체 소자

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JPH0685067A (ja) * 1992-09-07 1994-03-25 Nec Corp 半導体装置
JPH0949858A (ja) * 1995-08-07 1997-02-18 Nippon Motorola Ltd 電流検出制御回路及びパターンレイアウト方法
JP2000077537A (ja) * 1998-06-19 2000-03-14 Denso Corp 絶縁ゲ―ト型トランジスタのサ―ジ保護回路
JP2006060191A (ja) * 2004-07-23 2006-03-02 Seiko Epson Corp 薄膜半導体装置及びその製造方法、電気光学装置、電子機器
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JP2008021852A (ja) * 2006-07-13 2008-01-31 Toshiba Corp 半導体装置

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JP3033548B2 (ja) * 1997-11-12 2000-04-17 日本電気株式会社 半導体装置、静電保護素子及び絶縁破壊防止方法
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KR100294019B1 (ko) * 1998-05-18 2001-07-12 윤종용 반도체칩의정전기보호용트랜지스터
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JP3425574B2 (ja) * 1999-07-19 2003-07-14 Ｎｅｃエレクトロニクス株式会社 半導体集積回路の入出力保護装置
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JPH0949858A (ja) * 1995-08-07 1997-02-18 Nippon Motorola Ltd 電流検出制御回路及びパターンレイアウト方法
JP2000077537A (ja) * 1998-06-19 2000-03-14 Denso Corp 絶縁ゲ―ト型トランジスタのサ―ジ保護回路
JP2006060191A (ja) * 2004-07-23 2006-03-02 Seiko Epson Corp 薄膜半導体装置及びその製造方法、電気光学装置、電子機器
JP2007005774A (ja) * 2005-05-23 2007-01-11 Semiconductor Energy Lab Co Ltd 光電変換装置及びその作製方法
JP2008021852A (ja) * 2006-07-13 2008-01-31 Toshiba Corp 半導体装置

Cited By (39)

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Publication number Priority date Publication date Assignee Title
JP2016178321A (ja) * 2010-06-18 2016-10-06 株式会社半導体エネルギー研究所 半導体装置
US10644164B2 (en) 2011-04-13 2020-05-05 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US12206023B2 (en) 2011-04-13 2025-01-21 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US9478668B2 (en) 2011-04-13 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
JP2024111067A (ja) * 2011-04-13 2024-08-16 株式会社半導体エネルギー研究所 酸化物半導体膜
US9893201B2 (en) 2011-04-13 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
JP2012231133A (ja) * 2011-04-13 2012-11-22 Semiconductor Energy Lab Co Ltd 酸化物半導体膜、及び半導体装置
US11799033B2 (en) 2011-04-13 2023-10-24 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US10998449B2 (en) 2011-04-13 2021-05-04 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US11908876B2 (en) 2014-06-09 2024-02-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including photoelectric conversion element
US12581755B2 (en) 2014-06-09 2026-03-17 Semiconductor Energy Laboratory Co., Ltd. Imaging device comprising net shape wiring
JPWO2015189732A1 (ja) * 2014-06-09 2017-04-20 株式会社半導体エネルギー研究所 撮像装置
US11205669B2 (en) 2014-06-09 2021-12-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including photoelectric conversion element
JP2016181616A (ja) * 2015-03-24 2016-10-13 ラピスセミコンダクタ株式会社 半導体素子、半導体装置および半導体素子のレイアウト方法
US11372030B2 (en) 2016-09-27 2022-06-28 Analog Devices International Unlimited Company Electrical overstress detection device
US10677822B2 (en) 2016-09-27 2020-06-09 Analog Devices Global Unlimited Company Electrical overstress detection device
JP2018067705A (ja) * 2016-09-27 2018-04-26 アナログ・ディヴァイシス・グローバル・アンリミテッド・カンパニー 電気的過剰ストレス検出デバイス
WO2018116864A1 (ja) * 2016-12-22 2018-06-28 ソニーセミコンダクタソリューションズ株式会社 撮像パネル、および撮像パネルの製造方法、レントゲン装置、並びに撮像装置
JP2018117053A (ja) * 2017-01-19 2018-07-26 日立オートモティブシステムズ株式会社 電子装置
WO2018135220A1 (ja) * 2017-01-19 2018-07-26 日立オートモティブシステムズ株式会社 電子装置
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US11668734B2 (en) 2018-03-26 2023-06-06 Analog Devices International Unlimited Company Spark gap structures for detection and protection against electrical overstress events
US12055569B2 (en) 2018-03-26 2024-08-06 Analog Devices International Unlimited Company Spark gap structures for detection and protection against electrical overstress events
US12416652B2 (en) 2018-03-26 2025-09-16 Analog Devices International Unlimited Company Wearable device with energy harvesting
JP7487753B2 (ja) 2018-10-18 2024-05-21 富士電機株式会社 半導体装置および製造方法
WO2020080295A1 (ja) * 2018-10-18 2020-04-23 富士電機株式会社 半導体装置および製造方法
US11342186B2 (en) 2018-10-18 2022-05-24 Fuji Electric Co., Ltd. Semiconductor device and manufacturing method thereof
JP7067636B2 (ja) 2018-10-18 2022-05-16 富士電機株式会社 半導体装置および製造方法
JP2024040283A (ja) * 2018-10-18 2024-03-25 富士電機株式会社 半導体装置および製造方法
JP7722487B2 (ja) 2018-10-18 2025-08-13 富士電機株式会社 半導体装置および製造方法
JP2022105112A (ja) * 2018-10-18 2022-07-12 富士電機株式会社 半導体装置および製造方法
US11735424B2 (en) 2018-10-18 2023-08-22 Fuji Electric Co., Ltd. Semiconductor device and manufacturing method thereof
JPWO2020080295A1 (ja) * 2018-10-18 2021-04-01 富士電機株式会社 半導体装置および製造方法
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JPWO2020138218A1 (ja) * 2018-12-28 2021-06-10 富士電機株式会社 半導体装置および製造方法
US12368048B2 (en) 2018-12-28 2025-07-22 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing
US11972950B2 (en) 2018-12-28 2024-04-30 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing
JP7099550B2 (ja) 2018-12-28 2022-07-12 富士電機株式会社 半導体装置および製造方法
WO2020138218A1 (ja) * 2018-12-28 2020-07-02 富士電機株式会社 半導体装置および製造方法

Also Published As

Publication number Publication date
TWI489614B (zh) 2015-06-21
TW201003895A (en) 2010-01-16
KR20090131252A (ko) 2009-12-28
KR101616937B1 (ko) 2016-04-29
US20090310265A1 (en) 2009-12-17
US8363365B2 (en) 2013-01-29

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