KR101616937B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101616937B1
KR101616937B1 KR1020090052701A KR20090052701A KR101616937B1 KR 101616937 B1 KR101616937 B1 KR 101616937B1 KR 1020090052701 A KR1020090052701 A KR 1020090052701A KR 20090052701 A KR20090052701 A KR 20090052701A KR 101616937 B1 KR101616937 B1 KR 101616937B1
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terminal
film
circuit
semiconductor
connection
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KR20090131252A (ko
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오사무 후쿠오카
히데아키 시시도
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/60—Arrangements for protection of devices protecting against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
KR1020090052701A 2008-06-17 2009-06-15 반도체 장치 Active KR101616937B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008158256 2008-06-17
JPJP-P-2008-158256 2008-06-17

Publications (2)

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KR20090131252A KR20090131252A (ko) 2009-12-28
KR101616937B1 true KR101616937B1 (ko) 2016-04-29

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Family Applications (1)

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KR1020090052701A Active KR101616937B1 (ko) 2008-06-17 2009-06-15 반도체 장치

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US (1) US8363365B2 (https=)
JP (1) JP2010028109A (https=)
KR (1) KR101616937B1 (https=)
TW (1) TWI489614B (https=)

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JP5728171B2 (ja) 2009-06-29 2015-06-03 株式会社半導体エネルギー研究所 半導体装置
US9320135B2 (en) 2010-02-26 2016-04-19 Littelfuse, Inc. Electric discharge protection for surface mounted and embedded components
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US8637802B2 (en) * 2010-06-18 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Photosensor, semiconductor device including photosensor, and light measurement method using photosensor
US9478668B2 (en) 2011-04-13 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US8698480B2 (en) * 2011-06-27 2014-04-15 Micron Technology, Inc. Reference current distribution
US8698137B2 (en) 2011-09-14 2014-04-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8674352B2 (en) * 2012-02-28 2014-03-18 Texas Instruments Incorporated Overvoltage testing apparatus
HK1214832A1 (zh) 2012-11-28 2016-08-05 恩格姆生物制药公司 用於代謝病症和疾病治療的組合物和方法
US9273107B2 (en) 2012-12-27 2016-03-01 Ngm Biopharmaceuticals, Inc. Uses and methods for modulating bile acid homeostasis and treatment of bile acid disorders and diseases
MX383664B (es) 2012-12-27 2025-03-14 Ngm Biopharmaceuticals Inc Uso de un péptido para modular la homeostasis de los ácidos biliares o tratamiento de una enfermedad relacionada con los ácidos biliares.
WO2015065897A1 (en) 2013-10-28 2015-05-07 Ngm Biopharmaceuticals, Inc. Cancer models and associated methods
US10398758B2 (en) 2014-05-28 2019-09-03 Ngm Biopharmaceuticals, Inc. Compositions comprising variants of FGF19 polypeptides and uses thereof for the treatment of hyperglycemic conditions
KR102359180B1 (ko) 2014-06-09 2022-02-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
WO2015195509A2 (en) 2014-06-16 2015-12-23 Ngm Biopharmaceuticals, Inc. Methods and uses for modulating bile acid homeostasis and treatment of bile acid disorders and diseases
CN114129709A (zh) 2014-10-23 2022-03-04 恩格姆生物制药公司 包含肽变异体的药物组合物及其使用方法
US10434144B2 (en) 2014-11-07 2019-10-08 Ngm Biopharmaceuticals, Inc. Methods for treatment of bile acid-related disorders and prediction of clinical sensitivity to treatment of bile acid-related disorders
JP6466220B2 (ja) * 2015-03-24 2019-02-06 ラピスセミコンダクタ株式会社 半導体素子、半導体装置および半導体素子のレイアウト方法
US10677822B2 (en) 2016-09-27 2020-06-09 Analog Devices Global Unlimited Company Electrical overstress detection device
JP2018107161A (ja) * 2016-12-22 2018-07-05 ソニーセミコンダクタソリューションズ株式会社 撮像パネル、および撮像パネルの製造方法、レントゲン装置、並びに撮像装置
JP6838240B2 (ja) 2017-01-19 2021-03-03 日立Astemo株式会社 電子装置
US11112436B2 (en) 2018-03-26 2021-09-07 Analog Devices International Unlimited Company Spark gap structures for detection and protection against electrical overstress events
KR102632497B1 (ko) * 2018-08-08 2024-02-02 삼성전자주식회사 저항 구조물을 구비하는 반도체 소자
DE112019001123B4 (de) 2018-10-18 2024-03-28 Fuji Electric Co., Ltd. Halbleitervorrichtung und herstellungsverfahren davon
CN118676194A (zh) 2018-12-28 2024-09-20 富士电机株式会社 半导体装置

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JP2006060191A (ja) * 2004-07-23 2006-03-02 Seiko Epson Corp 薄膜半導体装置及びその製造方法、電気光学装置、電子機器
JP2007005774A (ja) * 2005-05-23 2007-01-11 Semiconductor Energy Lab Co Ltd 光電変換装置及びその作製方法
JP2008021852A (ja) * 2006-07-13 2008-01-31 Toshiba Corp 半導体装置

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JP3425574B2 (ja) * 1999-07-19 2003-07-14 Ｎｅｃエレクトロニクス株式会社 半導体集積回路の入出力保護装置
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Patent Citations (3)

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JP2006060191A (ja) * 2004-07-23 2006-03-02 Seiko Epson Corp 薄膜半導体装置及びその製造方法、電気光学装置、電子機器
JP2007005774A (ja) * 2005-05-23 2007-01-11 Semiconductor Energy Lab Co Ltd 光電変換装置及びその作製方法
JP2008021852A (ja) * 2006-07-13 2008-01-31 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
TWI489614B (zh) 2015-06-21
JP2010028109A (ja) 2010-02-04
TW201003895A (en) 2010-01-16
KR20090131252A (ko) 2009-12-28
US20090310265A1 (en) 2009-12-17
US8363365B2 (en) 2013-01-29

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