TWI489614B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI489614B
TWI489614B TW098119079A TW98119079A TWI489614B TW I489614 B TWI489614 B TW I489614B TW 098119079 A TW098119079 A TW 098119079A TW 98119079 A TW98119079 A TW 98119079A TW I489614 B TWI489614 B TW I489614B
Authority
TW
Taiwan
Prior art keywords
film
terminal
semiconductor
circuit
semiconductor device
Prior art date
Application number
TW098119079A
Other languages
English (en)
Chinese (zh)
Other versions
TW201003895A (en
Inventor
福岡修
宍戶英明
Original Assignee
半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW201003895A publication Critical patent/TW201003895A/zh
Application granted granted Critical
Publication of TWI489614B publication Critical patent/TWI489614B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/60—Arrangements for protection of devices protecting against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
TW098119079A 2008-06-17 2009-06-08 半導體裝置 TWI489614B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008158256 2008-06-17

Publications (2)

Publication Number Publication Date
TW201003895A TW201003895A (en) 2010-01-16
TWI489614B true TWI489614B (zh) 2015-06-21

Family

ID=41414536

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098119079A TWI489614B (zh) 2008-06-17 2009-06-08 半導體裝置

Country Status (4)

Country Link
US (1) US8363365B2 (https=)
JP (1) JP2010028109A (https=)
KR (1) KR101616937B1 (https=)
TW (1) TWI489614B (https=)

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JP2010521058A (ja) * 2006-09-24 2010-06-17 ショッキング テクノロジーズ，インコーポレイテッド ステップ電圧応答を有する電圧切り換え可能な誘電体材料の組成及び該誘電体材料の製造方法
JP5448584B2 (ja) * 2008-06-25 2014-03-19 株式会社半導体エネルギー研究所 半導体装置
US8174047B2 (en) 2008-07-10 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5728171B2 (ja) 2009-06-29 2015-06-03 株式会社半導体エネルギー研究所 半導体装置
US9320135B2 (en) 2010-02-26 2016-04-19 Littelfuse, Inc. Electric discharge protection for surface mounted and embedded components
US9082622B2 (en) 2010-02-26 2015-07-14 Littelfuse, Inc. Circuit elements comprising ferroic materials
US9224728B2 (en) 2010-02-26 2015-12-29 Littelfuse, Inc. Embedded protection against spurious electrical events
WO2011137261A1 (en) * 2010-04-28 2011-11-03 Shocking Technologies, Inc. Embedded protection against spurious electrical events
US8637802B2 (en) * 2010-06-18 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Photosensor, semiconductor device including photosensor, and light measurement method using photosensor
US9478668B2 (en) 2011-04-13 2016-10-25 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device
US8698480B2 (en) * 2011-06-27 2014-04-15 Micron Technology, Inc. Reference current distribution
US8698137B2 (en) 2011-09-14 2014-04-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8674352B2 (en) * 2012-02-28 2014-03-18 Texas Instruments Incorporated Overvoltage testing apparatus
HK1214832A1 (zh) 2012-11-28 2016-08-05 恩格姆生物制药公司 用於代謝病症和疾病治療的組合物和方法
US9273107B2 (en) 2012-12-27 2016-03-01 Ngm Biopharmaceuticals, Inc. Uses and methods for modulating bile acid homeostasis and treatment of bile acid disorders and diseases
MX383664B (es) 2012-12-27 2025-03-14 Ngm Biopharmaceuticals Inc Uso de un péptido para modular la homeostasis de los ácidos biliares o tratamiento de una enfermedad relacionada con los ácidos biliares.
WO2015065897A1 (en) 2013-10-28 2015-05-07 Ngm Biopharmaceuticals, Inc. Cancer models and associated methods
US10398758B2 (en) 2014-05-28 2019-09-03 Ngm Biopharmaceuticals, Inc. Compositions comprising variants of FGF19 polypeptides and uses thereof for the treatment of hyperglycemic conditions
KR102359180B1 (ko) 2014-06-09 2022-02-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
WO2015195509A2 (en) 2014-06-16 2015-12-23 Ngm Biopharmaceuticals, Inc. Methods and uses for modulating bile acid homeostasis and treatment of bile acid disorders and diseases
CN114129709A (zh) 2014-10-23 2022-03-04 恩格姆生物制药公司 包含肽变异体的药物组合物及其使用方法
US10434144B2 (en) 2014-11-07 2019-10-08 Ngm Biopharmaceuticals, Inc. Methods for treatment of bile acid-related disorders and prediction of clinical sensitivity to treatment of bile acid-related disorders
JP6466220B2 (ja) * 2015-03-24 2019-02-06 ラピスセミコンダクタ株式会社 半導体素子、半導体装置および半導体素子のレイアウト方法
US10677822B2 (en) 2016-09-27 2020-06-09 Analog Devices Global Unlimited Company Electrical overstress detection device
JP2018107161A (ja) * 2016-12-22 2018-07-05 ソニーセミコンダクタソリューションズ株式会社 撮像パネル、および撮像パネルの製造方法、レントゲン装置、並びに撮像装置
JP6838240B2 (ja) 2017-01-19 2021-03-03 日立Astemo株式会社 電子装置
US11112436B2 (en) 2018-03-26 2021-09-07 Analog Devices International Unlimited Company Spark gap structures for detection and protection against electrical overstress events
KR102632497B1 (ko) * 2018-08-08 2024-02-02 삼성전자주식회사 저항 구조물을 구비하는 반도체 소자
DE112019001123B4 (de) 2018-10-18 2024-03-28 Fuji Electric Co., Ltd. Halbleitervorrichtung und herstellungsverfahren davon
CN118676194A (zh) 2018-12-28 2024-09-20 富士电机株式会社 半导体装置

Citations (12)

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US5717559A (en) * 1995-07-28 1998-02-10 Nec Corporation Input/output protection device for use in semiconductor device
US5828107A (en) * 1995-11-15 1998-10-27 Nec Corporation Semiconductor integrated circuit device
JPH11163247A (ja) * 1997-12-01 1999-06-18 Hitachi Ltd 半導体装置およびリードフレーム
JPH11340425A (ja) * 1998-05-18 1999-12-10 Samsung Electronics Co Ltd 半導体チップの静電気保護用トランジスタとその製造方法、及びそのトランジスタを有する半導体チップ
US6072350A (en) * 1996-01-17 2000-06-06 Nec Corporation Electrostatic breakdown protection for a semiconductor device
US6281553B1 (en) * 1997-11-12 2001-08-28 Nec Corporation Semiconductor device, electrostatic discharge protection device, and dielectric breakdown preventing method
TW535277B (en) * 2001-03-29 2003-06-01 Toshiba Corp Semiconductor memory device
US6759716B1 (en) * 1999-07-19 2004-07-06 Nec Electronics Corporation Input/output protection device for a semiconductor integrated circuit
JP2006156907A (ja) * 2004-12-01 2006-06-15 Matsushita Electric Ind Co Ltd 半導体集積回路装置
TW200703622A (en) * 2005-06-17 2007-01-16 Sharp Kk Semiconductor storage apparatus
TW200735277A (en) * 2005-11-30 2007-09-16 Renesas Tech Corp Semiconductor device
JP2008237665A (ja) * 2007-03-28 2008-10-09 Mitsubishi Heavy Ind Ltd 人工心臓ポンプ

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US5157573A (en) * 1989-05-12 1992-10-20 Western Digital Corporation ESD protection circuit with segmented buffer transistor
JP2884938B2 (ja) * 1992-09-07 1999-04-19 日本電気株式会社 半導体装置
US5218222A (en) * 1992-09-16 1993-06-08 Micron Semiconductor, Inc. Output ESD protection circuit
US5477414A (en) * 1993-05-03 1995-12-19 Xilinx, Inc. ESD protection circuit
JPH0949858A (ja) * 1995-08-07 1997-02-18 Nippon Motorola Ltd 電流検出制御回路及びパターンレイアウト方法
JP3255147B2 (ja) * 1998-06-19 2002-02-12 株式会社デンソー 絶縁ゲート型トランジスタのサージ保護回路
JP3116916B2 (ja) * 1998-08-17 2000-12-11 日本電気株式会社 回路装置、その製造方法
JP4511803B2 (ja) * 2003-04-14 2010-07-28 株式会社半導体エネルギー研究所 Ｄ／ａ変換回路及びそれを内蔵した半導体装置の製造方法
JP2006060191A (ja) * 2004-07-23 2006-03-02 Seiko Epson Corp 薄膜半導体装置及びその製造方法、電気光学装置、電子機器
JP4619318B2 (ja) * 2005-05-23 2011-01-26 株式会社半導体エネルギー研究所 光電変換装置
DE602007002105D1 (de) * 2006-04-28 2009-10-08 Semiconductor Energy Lab Halbleiterbauelement
JP2008021852A (ja) * 2006-07-13 2008-01-31 Toshiba Corp 半導体装置
US7692999B2 (en) * 2006-12-25 2010-04-06 Semiconductor Energy Laboratory Co., Ltd Nonvolatile memory and semiconductor device including nonvolatile memory
US8354724B2 (en) * 2007-03-26 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US7960772B2 (en) * 2007-04-26 2011-06-14 Peregrine Semiconductor Corporation Tuning capacitance to enhance FET stack voltage withstand
WO2009014155A1 (en) * 2007-07-25 2009-01-29 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
JP5388632B2 (ja) * 2008-03-14 2014-01-15 株式会社半導体エネルギー研究所 半導体装置
US8174047B2 (en) * 2008-07-10 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5717559A (en) * 1995-07-28 1998-02-10 Nec Corporation Input/output protection device for use in semiconductor device
US5828107A (en) * 1995-11-15 1998-10-27 Nec Corporation Semiconductor integrated circuit device
US6072350A (en) * 1996-01-17 2000-06-06 Nec Corporation Electrostatic breakdown protection for a semiconductor device
US6281553B1 (en) * 1997-11-12 2001-08-28 Nec Corporation Semiconductor device, electrostatic discharge protection device, and dielectric breakdown preventing method
JPH11163247A (ja) * 1997-12-01 1999-06-18 Hitachi Ltd 半導体装置およびリードフレーム
JPH11340425A (ja) * 1998-05-18 1999-12-10 Samsung Electronics Co Ltd 半導体チップの静電気保護用トランジスタとその製造方法、及びそのトランジスタを有する半導体チップ
US6759716B1 (en) * 1999-07-19 2004-07-06 Nec Electronics Corporation Input/output protection device for a semiconductor integrated circuit
TW535277B (en) * 2001-03-29 2003-06-01 Toshiba Corp Semiconductor memory device
JP2006156907A (ja) * 2004-12-01 2006-06-15 Matsushita Electric Ind Co Ltd 半導体集積回路装置
TW200703622A (en) * 2005-06-17 2007-01-16 Sharp Kk Semiconductor storage apparatus
TW200735277A (en) * 2005-11-30 2007-09-16 Renesas Tech Corp Semiconductor device
JP2008237665A (ja) * 2007-03-28 2008-10-09 Mitsubishi Heavy Ind Ltd 人工心臓ポンプ

Also Published As

Publication number Publication date
JP2010028109A (ja) 2010-02-04
TW201003895A (en) 2010-01-16
KR20090131252A (ko) 2009-12-28
KR101616937B1 (ko) 2016-04-29
US20090310265A1 (en) 2009-12-17
US8363365B2 (en) 2013-01-29

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