JP2010010667A5 - - Google Patents

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Publication number
JP2010010667A5
JP2010010667A5 JP2009125340A JP2009125340A JP2010010667A5 JP 2010010667 A5 JP2010010667 A5 JP 2010010667A5 JP 2009125340 A JP2009125340 A JP 2009125340A JP 2009125340 A JP2009125340 A JP 2009125340A JP 2010010667 A5 JP2010010667 A5 JP 2010010667A5
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JP
Japan
Prior art keywords
semiconductor layer
conductivity type
impurity element
crystal
photoelectric conversion
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Application number
JP2009125340A
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English (en)
Japanese (ja)
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JP2010010667A (ja
JP5667750B2 (ja
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Priority to JP2009125340A priority Critical patent/JP5667750B2/ja
Priority claimed from JP2009125340A external-priority patent/JP5667750B2/ja
Publication of JP2010010667A publication Critical patent/JP2010010667A/ja
Publication of JP2010010667A5 publication Critical patent/JP2010010667A5/ja
Application granted granted Critical
Publication of JP5667750B2 publication Critical patent/JP5667750B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009125340A 2008-05-30 2009-05-25 光電変換装置および光電変換装置の作製方法 Expired - Fee Related JP5667750B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009125340A JP5667750B2 (ja) 2008-05-30 2009-05-25 光電変換装置および光電変換装置の作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2008143277 2008-05-30
JP2008143277 2008-05-30
JP2008143301 2008-05-30
JP2008143301 2008-05-30
JP2009125340A JP5667750B2 (ja) 2008-05-30 2009-05-25 光電変換装置および光電変換装置の作製方法

Publications (3)

Publication Number Publication Date
JP2010010667A JP2010010667A (ja) 2010-01-14
JP2010010667A5 true JP2010010667A5 (enExample) 2012-07-05
JP5667750B2 JP5667750B2 (ja) 2015-02-12

Family

ID=41378278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009125340A Expired - Fee Related JP5667750B2 (ja) 2008-05-30 2009-05-25 光電変換装置および光電変換装置の作製方法

Country Status (5)

Country Link
US (1) US20090293954A1 (enExample)
JP (1) JP5667750B2 (enExample)
KR (1) KR101560174B1 (enExample)
CN (1) CN101593778B (enExample)
TW (1) TWI464890B (enExample)

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US8704083B2 (en) * 2010-02-11 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and fabrication method thereof
US9537043B2 (en) 2010-04-23 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
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JP5783796B2 (ja) 2010-05-26 2015-09-24 株式会社半導体エネルギー研究所 光電変換装置
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JP2012015491A (ja) 2010-06-04 2012-01-19 Semiconductor Energy Lab Co Ltd 光電変換装置
US9076909B2 (en) * 2010-06-18 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
JP5894379B2 (ja) * 2010-06-18 2016-03-30 株式会社半導体エネルギー研究所 光電変換装置
JP2012023343A (ja) * 2010-06-18 2012-02-02 Semiconductor Energy Lab Co Ltd 光電変換装置及びその作製方法
EP2593970B1 (en) * 2010-07-13 2017-05-24 Philips Lighting Holding B.V. Converter material for luminescent solar concentrators
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JP5866768B2 (ja) * 2011-02-16 2016-02-17 セイコーエプソン株式会社 光電変換装置、電子機器
CN102856419A (zh) * 2012-08-16 2013-01-02 常州天合光能有限公司 叠层硅基异质结太阳能电池
KR101361476B1 (ko) 2013-06-04 2014-02-21 충남대학교산학협력단 태양전지 제조 방법
US20150093889A1 (en) * 2013-10-02 2015-04-02 Intermolecular Methods for removing a native oxide layer from germanium susbtrates in the fabrication of integrated circuits
CN105392089A (zh) * 2015-12-03 2016-03-09 瑞声声学科技(深圳)有限公司 复合层结构及其制造方法
US10854646B2 (en) 2018-10-19 2020-12-01 Attollo Engineering, LLC PIN photodetector

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JP5377061B2 (ja) * 2008-05-09 2013-12-25 株式会社半導体エネルギー研究所 光電変換装置

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