JP5667750B2 - 光電変換装置および光電変換装置の作製方法 - Google Patents

光電変換装置および光電変換装置の作製方法 Download PDF

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Publication number
JP5667750B2
JP5667750B2 JP2009125340A JP2009125340A JP5667750B2 JP 5667750 B2 JP5667750 B2 JP 5667750B2 JP 2009125340 A JP2009125340 A JP 2009125340A JP 2009125340 A JP2009125340 A JP 2009125340A JP 5667750 B2 JP5667750 B2 JP 5667750B2
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semiconductor layer
layer
impurity
electrode
substrate
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JP2010010667A (ja
JP2010010667A5 (enExample
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山崎　舜平
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
JP2009125340A 2008-05-30 2009-05-25 光電変換装置および光電変換装置の作製方法 Expired - Fee Related JP5667750B2 (ja)

Priority Applications (1)

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JP2009125340A JP5667750B2 (ja) 2008-05-30 2009-05-25 光電変換装置および光電変換装置の作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2008143277 2008-05-30
JP2008143277 2008-05-30
JP2008143301 2008-05-30
JP2008143301 2008-05-30
JP2009125340A JP5667750B2 (ja) 2008-05-30 2009-05-25 光電変換装置および光電変換装置の作製方法

Publications (3)

Publication Number Publication Date
JP2010010667A JP2010010667A (ja) 2010-01-14
JP2010010667A5 JP2010010667A5 (enExample) 2012-07-05
JP5667750B2 true JP5667750B2 (ja) 2015-02-12

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JP2009125340A Expired - Fee Related JP5667750B2 (ja) 2008-05-30 2009-05-25 光電変換装置および光電変換装置の作製方法

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US (1) US20090293954A1 (enExample)
JP (1) JP5667750B2 (enExample)
KR (1) KR101560174B1 (enExample)
CN (1) CN101593778B (enExample)
TW (1) TWI464890B (enExample)

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US7888167B2 (en) * 2008-04-25 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
JP5377061B2 (ja) * 2008-05-09 2013-12-25 株式会社半導体エネルギー研究所 光電変換装置
EP2256762A1 (en) * 2009-05-27 2010-12-01 Honeywell International Inc. Improved hole transfer polymer solar cell
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TWI399337B (zh) * 2009-12-21 2013-06-21 Univ Nat Cheng Kung 奈米感測器之製造方法
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DE102010006314A1 (de) * 2010-01-29 2011-08-04 EWE-Forschungszentrum für Energietechnologie e. V., 26129 Photovoltaische Mehrfach-Dünnschichtsolarzelle
US8704083B2 (en) * 2010-02-11 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and fabrication method thereof
US9537043B2 (en) 2010-04-23 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
JP5714972B2 (ja) 2010-05-07 2015-05-07 株式会社半導体エネルギー研究所 光電変換装置
JP5783796B2 (ja) 2010-05-26 2015-09-24 株式会社半導体エネルギー研究所 光電変換装置
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US9076909B2 (en) * 2010-06-18 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
JP5894379B2 (ja) * 2010-06-18 2016-03-30 株式会社半導体エネルギー研究所 光電変換装置
JP2012023343A (ja) * 2010-06-18 2012-02-02 Semiconductor Energy Lab Co Ltd 光電変換装置及びその作製方法
EP2593970B1 (en) * 2010-07-13 2017-05-24 Philips Lighting Holding B.V. Converter material for luminescent solar concentrators
JP5719846B2 (ja) * 2010-07-28 2015-05-20 株式会社カネカ 薄膜太陽電池用透明電極、それを用いた薄膜太陽電池用透明電極付き基板および薄膜太陽電池、ならびに薄膜太陽電池用透明電極の製造方法
JP5866768B2 (ja) * 2011-02-16 2016-02-17 セイコーエプソン株式会社 光電変換装置、電子機器
CN102856419A (zh) * 2012-08-16 2013-01-02 常州天合光能有限公司 叠层硅基异质结太阳能电池
KR101361476B1 (ko) 2013-06-04 2014-02-21 충남대학교산학협력단 태양전지 제조 방법
US20150093889A1 (en) * 2013-10-02 2015-04-02 Intermolecular Methods for removing a native oxide layer from germanium susbtrates in the fabrication of integrated circuits
CN105392089A (zh) * 2015-12-03 2016-03-09 瑞声声学科技(深圳)有限公司 复合层结构及其制造方法
US10854646B2 (en) 2018-10-19 2020-12-01 Attollo Engineering, LLC PIN photodetector

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Also Published As

Publication number Publication date
CN101593778B (zh) 2013-12-25
JP2010010667A (ja) 2010-01-14
TW200952192A (en) 2009-12-16
TWI464890B (zh) 2014-12-11
US20090293954A1 (en) 2009-12-03
KR20090124989A (ko) 2009-12-03
CN101593778A (zh) 2009-12-02
KR101560174B1 (ko) 2015-10-14

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