JP5783796B2 - 光電変換装置 - Google Patents
光電変換装置 Download PDFInfo
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- JP5783796B2 JP5783796B2 JP2011115693A JP2011115693A JP5783796B2 JP 5783796 B2 JP5783796 B2 JP 5783796B2 JP 2011115693 A JP2011115693 A JP 2011115693A JP 2011115693 A JP2011115693 A JP 2011115693A JP 5783796 B2 JP5783796 B2 JP 5783796B2
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 8
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
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- B60L8/00—Electric propulsion with power supply from forces of nature, e.g. sun or wind
- B60L8/003—Converting light into electric energy, e.g. by using photo-voltaic systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/30—Electrical components
- H02S40/32—Electrical components comprising DC/AC inverter means associated with the PV module itself, e.g. AC modules
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Photovoltaic Devices (AREA)
Description
本実施の形態の光電変換装置を、図1、図2、図3(A)〜図3(B)、図4、図5(A)〜図5(B)、図6(A)〜図6(B)、図7(A)〜図7(B)、図8(A)〜図8(B)、図9、図10、図11、図12、図13、図14、図19を用いて説明する。
本実施の形態では、実施の形態1で述べたコンバータ回路の回路構成の一例について、図15を用いて説明する。
本実施の形態では、実施の形態1又は実施の形態2などにより得られる光電変換装置を用いて、太陽光発電モジュールを得る。得られた太陽光発電モジュールを電動推進車両に搭載する例について説明する。
102 高濃度不純物領域
103 低濃度不純物領域
104 低濃度不純物領域
106 ゲート電極
107 ゲート絶縁膜
108 高濃度不純物領域
109 絶縁膜
110 チャネル形成領域
111 絶縁ゲート型バイポーラトランジスタ
112 マスク
113 溝
114 導電膜
115 絶縁膜
116 導電膜
117 マスク
118 不純物元素
121 導電膜
123 導電膜
131 導電膜
133 導電膜
134 低濃度不純物領域
138 高濃度不純物領域
140 チャネル形成領域
141 絶縁ゲート型バイポーラトランジスタ
151 MOSFET
161 MOSFET
201 基板
202 セル
210 導電膜
211 光電変換層
212 導電膜
213 p型非晶質半導体層
214 真性非晶質半導体層
215 n型非晶質半導体層
301 コンバータ回路
302 トランジスタ
303 コイル
305 コンデンサ
307 光電変換素子
309 ダイオード
311 コンバータ回路
312 トランジスタ
313 コイル
315 コンデンサ
317 光電変換素子
319 ダイオード
601 電源回路
602 電圧変換回路
603 制御回路
611 トランジスタ
612 コイル
613 ダイオード
614 コンデンサ
621 三角波発生回路
623 パルス幅変調出力ドライバ
624 抵抗
625 抵抗
627 矢印
650 回路
651 コンパレータ
652 デジタル演算処理回路
652a デジタル平均化・積分器
652b デジタルパルス幅変調器
653 パルス幅変調出力ドライバ
654 ローパスフィルタ
655 クロック分割器
800 太陽光発電モジュール
807 補助電極
808 補助電極
840 蓄電池
841 外部回路
851 電圧変換回路
853 制御回路
860 電動推進車両
862 コンバータ
864 キャパシタ
866 エンジン
868 モニタ
870 ラジエータ
872 循環ポンプ
Claims (6)
- 光電変換素子と、
前記光電変換素子の出力を昇圧又は降圧し、スイッチング素子及び整流素子を有するコンバータ回路と、を有する光電変換装置であり、
前記スイッチング素子として、ノーマリオフの第1の絶縁ゲート型バイポーラトランジスタと、
前記整流素子として、ダイオード接続されたノーマリオンの第2の絶縁ゲート型バイポーラトランジスタと、を有し、
前記第1の絶縁ゲート型バイポーラトランジスタ及び前記第2の絶縁ゲート型バイポーラトランジスタは、
コレクタ電極と、
前記コレクタ電極上方の第1の高濃度不純物領域と、
前記第1の高濃度不純物領域上方の第2の高濃度不純物領域と、
前記第2の高濃度不純物領域上方の第1の低濃度不純物領域と、
前記第1の低濃度不純物領域上方の第2の低濃度不純物領域と、
前記第2の低濃度不純物領域中に設けられている第3の高濃度不純物領域と、
前記第1の低濃度不純物領域及び前記第2の低濃度不純物領域に埋め込まれているゲート電極及びゲート絶縁膜と、
前記第3の高濃度不純物領域上方、前記ゲート電極上方及び前記ゲート絶縁膜上方の絶縁膜と、
前記第3の高濃度不純物領域上方及び前記絶縁膜上方のエミッタ電極と、を有し、
前記第2の低濃度不純物領域は、前記第1の低濃度領域と前記第3の高濃度不純物領域との間のチャネル形成領域を有し、
前記第1の高濃度不純物領域及び前記第2の低濃度不純物領域は、第1の不純物元素を有し、
前記第2の高濃度不純物領域、前記第1の低濃度不純物領域及び前記第3の高濃度不純物領域は、第2の不純物元素を有し、
前記第1の不純物元素と前記第2の不純物元素とは、互い異なる導電型を付与するものであることを特徴とする光電変換装置。 - 請求項1において、
前記第1の絶縁ゲート型バイポーラトランジスタの前記チャネル形成領域の不純物濃度と前記第2の絶縁ゲート型バイポーラトランジスタの前記チャネル形成領域の不純物濃度とは、互いに異なることを特徴とする光電変換装置。 - 請求項1において、
前記第1の絶縁ゲート型バイポーラトランジスタにおいて、前記チャネル形成領域の不純物濃度は2×10 16 cm −3 よりも高く、
前記第2の絶縁ゲート型バイポーラトランジスタにおいて、前記チャネル形成領域の不純物濃度は2×10 16 cm −3 以下であることを特徴とする光電変換装置。 - 請求項1乃至請求項3のいずれか一項において、
前記第2の絶縁ゲート型バイポーラトランジスタにおいて、前記ゲート電極の上面に接する領域、前記エミッタ電極の側面に接する領域及び前記エミッタ電極の上面に接する領域を有する導電層が設けられていることを特徴とする光電変換装置。 - 請求項1乃至請求項4のいずれか一項において、前記コンバータ回路は、DC−DCコンバータであることを特徴とする光電変換装置。
- 請求項1乃至請求項5のいずれか一項において、前記コンバータ回路は、コイル、及びコンデンサを有するDC−DCコンバータであることを特徴とする光電変換装置。
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