CN101593778B - 光电转换装置及光电转换装置的制造方法 - Google Patents

光电转换装置及光电转换装置的制造方法 Download PDF

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Publication number
CN101593778B
CN101593778B CN2009102038572A CN200910203857A CN101593778B CN 101593778 B CN101593778 B CN 101593778B CN 2009102038572 A CN2009102038572 A CN 2009102038572A CN 200910203857 A CN200910203857 A CN 200910203857A CN 101593778 B CN101593778 B CN 101593778B
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semiconductor layer
impurity
layer
substrate
electrode
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CN101593778A (zh
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山崎舜平
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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CN2009102038572A 2008-05-30 2009-05-20 光电转换装置及光电转换装置的制造方法 Expired - Fee Related CN101593778B (zh)

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JP2008-143277 2008-05-30
JP2008143277 2008-05-30
JP2008143277 2008-05-30
JP2008143301 2008-05-30
JP2008143301 2008-05-30
JP2008-143301 2008-05-30

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CN101593778A CN101593778A (zh) 2009-12-02
CN101593778B true CN101593778B (zh) 2013-12-25

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US (1) US20090293954A1 (enExample)
JP (1) JP5667750B2 (enExample)
KR (1) KR101560174B1 (enExample)
CN (1) CN101593778B (enExample)
TW (1) TWI464890B (enExample)

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JP5377061B2 (ja) * 2008-05-09 2013-12-25 株式会社半導体エネルギー研究所 光電変換装置
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JP4802286B2 (ja) * 2009-08-28 2011-10-26 富士フイルム株式会社 光電変換素子及び撮像素子
TWI399337B (zh) * 2009-12-21 2013-06-21 Univ Nat Cheng Kung 奈米感測器之製造方法
TWI401812B (zh) * 2009-12-31 2013-07-11 Metal Ind Res Anddevelopment Ct Solar battery
FR2955702B1 (fr) * 2010-01-27 2012-01-27 Commissariat Energie Atomique Cellule photovoltaique comprenant un film mince de passivation en oxyde cristallin de silicium et procede de realisation
DE102010006314A1 (de) * 2010-01-29 2011-08-04 EWE-Forschungszentrum für Energietechnologie e. V., 26129 Photovoltaische Mehrfach-Dünnschichtsolarzelle
US8704083B2 (en) * 2010-02-11 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and fabrication method thereof
US9537043B2 (en) 2010-04-23 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
JP5714972B2 (ja) 2010-05-07 2015-05-07 株式会社半導体エネルギー研究所 光電変換装置
JP5783796B2 (ja) 2010-05-26 2015-09-24 株式会社半導体エネルギー研究所 光電変換装置
JP2012009816A (ja) * 2010-05-28 2012-01-12 Casio Comput Co Ltd 半導体装置およびその製造方法
JP2012015491A (ja) 2010-06-04 2012-01-19 Semiconductor Energy Lab Co Ltd 光電変換装置
US9076909B2 (en) * 2010-06-18 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
JP5894379B2 (ja) * 2010-06-18 2016-03-30 株式会社半導体エネルギー研究所 光電変換装置
JP2012023343A (ja) * 2010-06-18 2012-02-02 Semiconductor Energy Lab Co Ltd 光電変換装置及びその作製方法
EP2593970B1 (en) * 2010-07-13 2017-05-24 Philips Lighting Holding B.V. Converter material for luminescent solar concentrators
JP5719846B2 (ja) * 2010-07-28 2015-05-20 株式会社カネカ 薄膜太陽電池用透明電極、それを用いた薄膜太陽電池用透明電極付き基板および薄膜太陽電池、ならびに薄膜太陽電池用透明電極の製造方法
JP5866768B2 (ja) * 2011-02-16 2016-02-17 セイコーエプソン株式会社 光電変換装置、電子機器
CN102856419A (zh) * 2012-08-16 2013-01-02 常州天合光能有限公司 叠层硅基异质结太阳能电池
KR101361476B1 (ko) 2013-06-04 2014-02-21 충남대학교산학협력단 태양전지 제조 방법
US20150093889A1 (en) * 2013-10-02 2015-04-02 Intermolecular Methods for removing a native oxide layer from germanium susbtrates in the fabrication of integrated circuits
CN105392089A (zh) * 2015-12-03 2016-03-09 瑞声声学科技(深圳)有限公司 复合层结构及其制造方法
US10854646B2 (en) 2018-10-19 2020-12-01 Attollo Engineering, LLC PIN photodetector

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Also Published As

Publication number Publication date
JP2010010667A (ja) 2010-01-14
TW200952192A (en) 2009-12-16
TWI464890B (zh) 2014-12-11
US20090293954A1 (en) 2009-12-03
JP5667750B2 (ja) 2015-02-12
KR20090124989A (ko) 2009-12-03
CN101593778A (zh) 2009-12-02
KR101560174B1 (ko) 2015-10-14

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