JP2012516573A5 - - Google Patents
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- Publication number
- JP2012516573A5 JP2012516573A5 JP2011548032A JP2011548032A JP2012516573A5 JP 2012516573 A5 JP2012516573 A5 JP 2012516573A5 JP 2011548032 A JP2011548032 A JP 2011548032A JP 2011548032 A JP2011548032 A JP 2011548032A JP 2012516573 A5 JP2012516573 A5 JP 2012516573A5
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- conductive oxide
- power generation
- generation device
- solar power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010248 power generation Methods 0.000 claims description 75
- 239000004065 semiconductor Substances 0.000 claims description 48
- 238000010521 absorption reaction Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 13
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 8
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims 61
- 238000000137 annealing Methods 0.000 claims 30
- 238000010438 heat treatment Methods 0.000 claims 25
- 238000000034 method Methods 0.000 claims 23
- 238000004544 sputter deposition Methods 0.000 claims 7
- 230000004888 barrier function Effects 0.000 claims 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims 3
- 229910052793 cadmium Inorganic materials 0.000 claims 3
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims 3
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 claims 3
- 239000011521 glass Substances 0.000 claims 3
- 229910052738 indium Inorganic materials 0.000 claims 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 3
- 229910003437 indium oxide Inorganic materials 0.000 claims 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 3
- 229940071182 stannate Drugs 0.000 claims 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 3
- 229910001887 tin oxide Inorganic materials 0.000 claims 3
- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 claims 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 230000002745 absorbent Effects 0.000 claims 1
- 239000002250 absorbent Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000005361 soda-lime glass Substances 0.000 claims 1
- 239000002245 particle Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14827609P | 2009-01-29 | 2009-01-29 | |
| US61/148,276 | 2009-01-29 | ||
| PCT/US2010/021052 WO2010088059A1 (en) | 2009-01-29 | 2010-01-14 | Photovoltaic device with improved crystal orientation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012516573A JP2012516573A (ja) | 2012-07-19 |
| JP2012516573A5 true JP2012516573A5 (enExample) | 2014-03-27 |
Family
ID=42353175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011548032A Pending JP2012516573A (ja) | 2009-01-29 | 2010-01-14 | 改良された結晶配向性を有する太陽光発電装置 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20100186815A1 (enExample) |
| EP (1) | EP2392025B1 (enExample) |
| JP (1) | JP2012516573A (enExample) |
| KR (1) | KR20110107402A (enExample) |
| CN (1) | CN102365707B (enExample) |
| AU (1) | AU2010208530A1 (enExample) |
| TW (1) | TW201034207A (enExample) |
| WO (1) | WO2010088059A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011068033A1 (en) | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| WO2011126709A2 (en) * | 2010-03-30 | 2011-10-13 | First Solar, Inc. | Doped buffer layer |
| US20120060923A1 (en) * | 2010-03-31 | 2012-03-15 | Zhibo Zhao | Photovoltaic device barrier layer |
| CN103180962B (zh) | 2010-08-13 | 2016-05-11 | 第一太阳能有限公司 | 具有氧化物层的光伏装置 |
| US20120042927A1 (en) * | 2010-08-20 | 2012-02-23 | Chungho Lee | Photovoltaic device front contact |
| CN103283031B (zh) | 2010-09-22 | 2016-08-17 | 第一太阳能有限公司 | 包含n型掺杂剂源的光伏装置 |
| US8354586B2 (en) | 2010-10-01 | 2013-01-15 | Guardian Industries Corp. | Transparent conductor film stack with cadmium stannate, corresponding photovoltaic device, and method of making same |
| SG188760A1 (en) * | 2011-09-20 | 2013-04-30 | Air Prod & Chem | Oxygen containing precursors for photovoltaic passivation |
| US9034686B2 (en) * | 2012-06-29 | 2015-05-19 | First Solar, Inc. | Manufacturing methods for semiconductor devices |
| US20140053895A1 (en) * | 2012-08-24 | 2014-02-27 | Rosestreet Labs, Llc | Intentionally-doped cadmium oxide layer for solar cells |
| US9698285B2 (en) | 2013-02-01 | 2017-07-04 | First Solar, Inc. | Photovoltaic device including a P-N junction and method of manufacturing |
| US11876140B2 (en) * | 2013-05-02 | 2024-01-16 | First Solar, Inc. | Photovoltaic devices and method of making |
| CN104183663B (zh) | 2013-05-21 | 2017-04-12 | 第一太阳能马来西亚有限公司 | 光伏器件及其制备方法 |
| US10062800B2 (en) | 2013-06-07 | 2018-08-28 | First Solar, Inc. | Photovoltaic devices and method of making |
| US10672925B2 (en) * | 2013-06-14 | 2020-06-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Thin film solar cell and method of forming same |
| US10529883B2 (en) | 2014-11-03 | 2020-01-07 | First Solar, Inc. | Photovoltaic devices and method of manufacturing |
| US10672921B2 (en) | 2015-03-12 | 2020-06-02 | Vitro Flat Glass Llc | Article with transparent conductive layer and method of making the same |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5234391A (en) * | 1975-09-12 | 1977-03-16 | Hitachi Ltd | Production method of transparent electrode film |
| JPS63304520A (ja) * | 1987-06-04 | 1988-12-12 | Sumitomo Electric Ind Ltd | 透明電極の製造方法 |
| JPH03120763A (ja) * | 1989-10-04 | 1991-05-22 | Ricoh Co Ltd | 光電変換素子 |
| DE4442824C1 (de) * | 1994-12-01 | 1996-01-25 | Siemens Ag | Solarzelle mit Chalkopyrit-Absorberschicht |
| US6169246B1 (en) * | 1998-09-08 | 2001-01-02 | Midwest Research Institute | Photovoltaic devices comprising zinc stannate buffer layer and method for making |
| US6137048A (en) * | 1996-11-07 | 2000-10-24 | Midwest Research Institute | Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby |
| US5922142A (en) * | 1996-11-07 | 1999-07-13 | Midwest Research Institute | Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making |
| JPH10247625A (ja) * | 1997-03-04 | 1998-09-14 | Matsushita Denchi Kogyo Kk | ＣｄＴｅ膜の形成方法とそれを用いた太陽電池 |
| JP3247876B2 (ja) * | 1999-03-09 | 2002-01-21 | 日本板硝子株式会社 | 透明導電膜付きガラス基板 |
| JP2000357810A (ja) * | 1999-06-16 | 2000-12-26 | Matsushita Battery Industrial Co Ltd | テルル化カドミウム膜の製造方法および太陽電池 |
| JP2001118758A (ja) * | 1999-10-14 | 2001-04-27 | Sony Corp | 半導体素子の製造方法 |
| JP2001223376A (ja) * | 2000-02-10 | 2001-08-17 | Midwest Research Inst | 多結晶半導体薄膜太陽電池の製造方法およびその方法で製造された太陽電池 |
| JP2001237441A (ja) * | 2000-02-24 | 2001-08-31 | Matsushita Battery Industrial Co Ltd | 太陽電池の製造方法および太陽電池 |
| AU2002248199A1 (en) * | 2001-12-13 | 2003-06-30 | Midwest Research Institute | Semiconductor device with higher oxygen (o2) concentration within window layers and method for making |
| US20070111367A1 (en) * | 2005-10-19 | 2007-05-17 | Basol Bulent M | Method and apparatus for converting precursor layers into photovoltaic absorbers |
| US8389852B2 (en) * | 2006-02-22 | 2013-03-05 | Guardian Industries Corp. | Electrode structure for use in electronic device and method of making same |
| US20090014055A1 (en) * | 2006-03-18 | 2009-01-15 | Solyndra, Inc. | Photovoltaic Modules Having a Filling Material |
| WO2008126706A1 (en) * | 2007-04-06 | 2008-10-23 | Semiconductor Energy Laboratory Co., Ltd. | Photovoltaic device and method for manufacturing the same |
| EP2286456A4 (en) * | 2008-05-01 | 2017-02-22 | First Solar, Inc | Transparent conductive materials including cadmium stannate |
-
2009
- 2009-12-28 TW TW098145293A patent/TW201034207A/zh unknown
-
2010
- 2010-01-14 US US12/687,697 patent/US20100186815A1/en not_active Abandoned
- 2010-01-14 AU AU2010208530A patent/AU2010208530A1/en not_active Abandoned
- 2010-01-14 WO PCT/US2010/021052 patent/WO2010088059A1/en not_active Ceased
- 2010-01-14 EP EP10736199.0A patent/EP2392025B1/en active Active
- 2010-01-14 KR KR1020117019848A patent/KR20110107402A/ko not_active Withdrawn
- 2010-01-14 CN CN201080014178.1A patent/CN102365707B/zh active Active
- 2010-01-14 JP JP2011548032A patent/JP2012516573A/ja active Pending
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