JP2012516573A - 改良された結晶配向性を有する太陽光発電装置 - Google Patents

改良された結晶配向性を有する太陽光発電装置 Download PDF

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JP2012516573A
JP2012516573A JP2011548032A JP2011548032A JP2012516573A JP 2012516573 A JP2012516573 A JP 2012516573A JP 2011548032 A JP2011548032 A JP 2011548032A JP 2011548032 A JP2011548032 A JP 2011548032A JP 2012516573 A JP2012516573 A JP 2012516573A
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transparent conductive
conductive oxide
layer
power generation
manufacturing
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Japanese (ja)
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JP2012516573A5 (enExample
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ユ ヤン
パシュマコフ ボイル
ズーボー チャオ
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ファースト ソーラー インコーポレイテッド
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Publication of JP2012516573A publication Critical patent/JP2012516573A/ja
Publication of JP2012516573A5 publication Critical patent/JP2012516573A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Photovoltaic Devices (AREA)
JP2011548032A 2009-01-29 2010-01-14 改良された結晶配向性を有する太陽光発電装置 Pending JP2012516573A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14827609P 2009-01-29 2009-01-29
US61/148,276 2009-01-29
PCT/US2010/021052 WO2010088059A1 (en) 2009-01-29 2010-01-14 Photovoltaic device with improved crystal orientation

Publications (2)

Publication Number Publication Date
JP2012516573A true JP2012516573A (ja) 2012-07-19
JP2012516573A5 JP2012516573A5 (enExample) 2014-03-27

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JP2011548032A Pending JP2012516573A (ja) 2009-01-29 2010-01-14 改良された結晶配向性を有する太陽光発電装置

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Country Link
US (1) US20100186815A1 (enExample)
EP (1) EP2392025B1 (enExample)
JP (1) JP2012516573A (enExample)
KR (1) KR20110107402A (enExample)
CN (1) CN102365707B (enExample)
AU (1) AU2010208530A1 (enExample)
TW (1) TW201034207A (enExample)
WO (1) WO2010088059A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018509766A (ja) * 2015-03-12 2018-04-05 ビトロ、エセ．ア．ベ． デ セ．ウベ． 光電子素子及びその製造方法

Families Citing this family (16)

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WO2011068033A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011126709A2 (en) * 2010-03-30 2011-10-13 First Solar, Inc. Doped buffer layer
US20120060923A1 (en) * 2010-03-31 2012-03-15 Zhibo Zhao Photovoltaic device barrier layer
CN103180962B (zh) 2010-08-13 2016-05-11 第一太阳能有限公司 具有氧化物层的光伏装置
US20120042927A1 (en) * 2010-08-20 2012-02-23 Chungho Lee Photovoltaic device front contact
CN103283031B (zh) 2010-09-22 2016-08-17 第一太阳能有限公司 包含n型掺杂剂源的光伏装置
US8354586B2 (en) 2010-10-01 2013-01-15 Guardian Industries Corp. Transparent conductor film stack with cadmium stannate, corresponding photovoltaic device, and method of making same
SG188760A1 (en) * 2011-09-20 2013-04-30 Air Prod & Chem Oxygen containing precursors for photovoltaic passivation
US9034686B2 (en) * 2012-06-29 2015-05-19 First Solar, Inc. Manufacturing methods for semiconductor devices
US20140053895A1 (en) * 2012-08-24 2014-02-27 Rosestreet Labs, Llc Intentionally-doped cadmium oxide layer for solar cells
US9698285B2 (en) 2013-02-01 2017-07-04 First Solar, Inc. Photovoltaic device including a P-N junction and method of manufacturing
US11876140B2 (en) * 2013-05-02 2024-01-16 First Solar, Inc. Photovoltaic devices and method of making
CN104183663B (zh) 2013-05-21 2017-04-12 第一太阳能马来西亚有限公司 光伏器件及其制备方法
US10062800B2 (en) 2013-06-07 2018-08-28 First Solar, Inc. Photovoltaic devices and method of making
US10672925B2 (en) * 2013-06-14 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Thin film solar cell and method of forming same
US10529883B2 (en) 2014-11-03 2020-01-07 First Solar, Inc. Photovoltaic devices and method of manufacturing

Citations (12)

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JPS5234391A (en) * 1975-09-12 1977-03-16 Hitachi Ltd Production method of transparent electrode film
JPS63304520A (ja) * 1987-06-04 1988-12-12 Sumitomo Electric Ind Ltd 透明電極の製造方法
JPH03120763A (ja) * 1989-10-04 1991-05-22 Ricoh Co Ltd 光電変換素子
JPH10247625A (ja) * 1997-03-04 1998-09-14 Matsushita Denchi Kogyo Kk ＣｄＴｅ膜の形成方法とそれを用いた太陽電池
JP2000261013A (ja) * 1999-03-09 2000-09-22 Nippon Sheet Glass Co Ltd 透明導電膜付きガラス基板
JP2000357810A (ja) * 1999-06-16 2000-12-26 Matsushita Battery Industrial Co Ltd テルル化カドミウム膜の製造方法および太陽電池
JP2001504281A (ja) * 1996-11-18 2001-03-27 ミッドウエスト リサーチ インスティチュート 光起電力装置とその製造方法
JP2001118758A (ja) * 1999-10-14 2001-04-27 Sony Corp 半導体素子の製造方法
JP2001223376A (ja) * 2000-02-10 2001-08-17 Midwest Research Inst 多結晶半導体薄膜太陽電池の製造方法およびその方法で製造された太陽電池
JP2001237441A (ja) * 2000-02-24 2001-08-31 Matsushita Battery Industrial Co Ltd 太陽電池の製造方法および太陽電池
JP2002524882A (ja) * 1998-09-08 2002-08-06 ミッドウエスト リサーチ インスティチュート 亜鉛スズ酸塩緩衝層を含む光電デバイスおよび製造方法
JP2008277805A (ja) * 2007-04-06 2008-11-13 Semiconductor Energy Lab Co Ltd 光起電力装置及びその製造方法

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DE4442824C1 (de) * 1994-12-01 1996-01-25 Siemens Ag Solarzelle mit Chalkopyrit-Absorberschicht
US6137048A (en) * 1996-11-07 2000-10-24 Midwest Research Institute Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby
AU2002248199A1 (en) * 2001-12-13 2003-06-30 Midwest Research Institute Semiconductor device with higher oxygen (o2) concentration within window layers and method for making
US20070111367A1 (en) * 2005-10-19 2007-05-17 Basol Bulent M Method and apparatus for converting precursor layers into photovoltaic absorbers
US8389852B2 (en) * 2006-02-22 2013-03-05 Guardian Industries Corp. Electrode structure for use in electronic device and method of making same
US20090014055A1 (en) * 2006-03-18 2009-01-15 Solyndra, Inc. Photovoltaic Modules Having a Filling Material
EP2286456A4 (en) * 2008-05-01 2017-02-22 First Solar, Inc Transparent conductive materials including cadmium stannate

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5234391A (en) * 1975-09-12 1977-03-16 Hitachi Ltd Production method of transparent electrode film
JPS63304520A (ja) * 1987-06-04 1988-12-12 Sumitomo Electric Ind Ltd 透明電極の製造方法
JPH03120763A (ja) * 1989-10-04 1991-05-22 Ricoh Co Ltd 光電変換素子
JP2001504281A (ja) * 1996-11-18 2001-03-27 ミッドウエスト リサーチ インスティチュート 光起電力装置とその製造方法
JPH10247625A (ja) * 1997-03-04 1998-09-14 Matsushita Denchi Kogyo Kk ＣｄＴｅ膜の形成方法とそれを用いた太陽電池
JP2002524882A (ja) * 1998-09-08 2002-08-06 ミッドウエスト リサーチ インスティチュート 亜鉛スズ酸塩緩衝層を含む光電デバイスおよび製造方法
JP2000261013A (ja) * 1999-03-09 2000-09-22 Nippon Sheet Glass Co Ltd 透明導電膜付きガラス基板
JP2000357810A (ja) * 1999-06-16 2000-12-26 Matsushita Battery Industrial Co Ltd テルル化カドミウム膜の製造方法および太陽電池
JP2001118758A (ja) * 1999-10-14 2001-04-27 Sony Corp 半導体素子の製造方法
JP2001223376A (ja) * 2000-02-10 2001-08-17 Midwest Research Inst 多結晶半導体薄膜太陽電池の製造方法およびその方法で製造された太陽電池
JP2001237441A (ja) * 2000-02-24 2001-08-31 Matsushita Battery Industrial Co Ltd 太陽電池の製造方法および太陽電池
JP2008277805A (ja) * 2007-04-06 2008-11-13 Semiconductor Energy Lab Co Ltd 光起電力装置及びその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018509766A (ja) * 2015-03-12 2018-04-05 ビトロ、エセ．ア．ベ． デ セ．ウベ． 光電子素子及びその製造方法
US10672920B2 (en) 2015-03-12 2020-06-02 Vitro Flat Glass Llc Article with buffer layer
US10672921B2 (en) 2015-03-12 2020-06-02 Vitro Flat Glass Llc Article with transparent conductive layer and method of making the same
US10680123B2 (en) 2015-03-12 2020-06-09 Vitro Flat Glass Llc Article with transparent conductive oxide coating

Also Published As

Publication number Publication date
AU2010208530A1 (en) 2011-08-18
EP2392025A1 (en) 2011-12-07
EP2392025A4 (en) 2012-07-11
TW201034207A (en) 2010-09-16
KR20110107402A (ko) 2011-09-30
WO2010088059A1 (en) 2010-08-05
EP2392025B1 (en) 2013-09-04
CN102365707B (zh) 2015-02-04
CN102365707A (zh) 2012-02-29
US20100186815A1 (en) 2010-07-29

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