CN102365707B - 具有改善的晶体取向的光伏装置 - Google Patents

具有改善的晶体取向的光伏装置 Download PDF

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Publication number
CN102365707B
CN102365707B CN201080014178.1A CN201080014178A CN102365707B CN 102365707 B CN102365707 B CN 102365707B CN 201080014178 A CN201080014178 A CN 201080014178A CN 102365707 B CN102365707 B CN 102365707B
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CN
China
Prior art keywords
transparent conductive
conductive oxide
layer
depositing
annealing
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CN201080014178.1A
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English (en)
Chinese (zh)
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CN102365707A (zh
Inventor
杨宇
布伊尔·帕斯马科夫
赵志波
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First Solar Inc
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First Solar Inc
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
CN201080014178.1A 2009-01-29 2010-01-14 具有改善的晶体取向的光伏装置 Active CN102365707B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14827609P 2009-01-29 2009-01-29
US61/148,276 2009-01-29
PCT/US2010/021052 WO2010088059A1 (en) 2009-01-29 2010-01-14 Photovoltaic device with improved crystal orientation

Publications (2)

Publication Number Publication Date
CN102365707A CN102365707A (zh) 2012-02-29
CN102365707B true CN102365707B (zh) 2015-02-04

Family

ID=42353175

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080014178.1A Active CN102365707B (zh) 2009-01-29 2010-01-14 具有改善的晶体取向的光伏装置

Country Status (8)

Country Link
US (1) US20100186815A1 (enExample)
EP (1) EP2392025B1 (enExample)
JP (1) JP2012516573A (enExample)
KR (1) KR20110107402A (enExample)
CN (1) CN102365707B (enExample)
AU (1) AU2010208530A1 (enExample)
TW (1) TW201034207A (enExample)
WO (1) WO2010088059A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011068033A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011126709A2 (en) * 2010-03-30 2011-10-13 First Solar, Inc. Doped buffer layer
US20120060923A1 (en) * 2010-03-31 2012-03-15 Zhibo Zhao Photovoltaic device barrier layer
CN103180962B (zh) 2010-08-13 2016-05-11 第一太阳能有限公司 具有氧化物层的光伏装置
US20120042927A1 (en) * 2010-08-20 2012-02-23 Chungho Lee Photovoltaic device front contact
CN103283031B (zh) 2010-09-22 2016-08-17 第一太阳能有限公司 包含n型掺杂剂源的光伏装置
US8354586B2 (en) 2010-10-01 2013-01-15 Guardian Industries Corp. Transparent conductor film stack with cadmium stannate, corresponding photovoltaic device, and method of making same
SG188760A1 (en) * 2011-09-20 2013-04-30 Air Prod & Chem Oxygen containing precursors for photovoltaic passivation
US9034686B2 (en) * 2012-06-29 2015-05-19 First Solar, Inc. Manufacturing methods for semiconductor devices
US20140053895A1 (en) * 2012-08-24 2014-02-27 Rosestreet Labs, Llc Intentionally-doped cadmium oxide layer for solar cells
US9698285B2 (en) 2013-02-01 2017-07-04 First Solar, Inc. Photovoltaic device including a P-N junction and method of manufacturing
US11876140B2 (en) * 2013-05-02 2024-01-16 First Solar, Inc. Photovoltaic devices and method of making
CN104183663B (zh) 2013-05-21 2017-04-12 第一太阳能马来西亚有限公司 光伏器件及其制备方法
US10062800B2 (en) 2013-06-07 2018-08-28 First Solar, Inc. Photovoltaic devices and method of making
US10672925B2 (en) * 2013-06-14 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Thin film solar cell and method of forming same
US10529883B2 (en) 2014-11-03 2020-01-07 First Solar, Inc. Photovoltaic devices and method of manufacturing
US10672921B2 (en) 2015-03-12 2020-06-02 Vitro Flat Glass Llc Article with transparent conductive layer and method of making the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6137048A (en) * 1996-11-07 2000-10-24 Midwest Research Institute Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby
US20070111367A1 (en) * 2005-10-19 2007-05-17 Basol Bulent M Method and apparatus for converting precursor layers into photovoltaic absorbers
US20070193623A1 (en) * 2006-02-22 2007-08-23 Guardian Industries Corp. Electrode structure for use in electronic device and method of making same
US20090014055A1 (en) * 2006-03-18 2009-01-15 Solyndra, Inc. Photovoltaic Modules Having a Filling Material

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JPS5234391A (en) * 1975-09-12 1977-03-16 Hitachi Ltd Production method of transparent electrode film
JPS63304520A (ja) * 1987-06-04 1988-12-12 Sumitomo Electric Ind Ltd 透明電極の製造方法
JPH03120763A (ja) * 1989-10-04 1991-05-22 Ricoh Co Ltd 光電変換素子
DE4442824C1 (de) * 1994-12-01 1996-01-25 Siemens Ag Solarzelle mit Chalkopyrit-Absorberschicht
US6169246B1 (en) * 1998-09-08 2001-01-02 Midwest Research Institute Photovoltaic devices comprising zinc stannate buffer layer and method for making
US5922142A (en) * 1996-11-07 1999-07-13 Midwest Research Institute Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making
JPH10247625A (ja) * 1997-03-04 1998-09-14 Matsushita Denchi Kogyo Kk ＣｄＴｅ膜の形成方法とそれを用いた太陽電池
JP3247876B2 (ja) * 1999-03-09 2002-01-21 日本板硝子株式会社 透明導電膜付きガラス基板
JP2000357810A (ja) * 1999-06-16 2000-12-26 Matsushita Battery Industrial Co Ltd テルル化カドミウム膜の製造方法および太陽電池
JP2001118758A (ja) * 1999-10-14 2001-04-27 Sony Corp 半導体素子の製造方法
JP2001223376A (ja) * 2000-02-10 2001-08-17 Midwest Research Inst 多結晶半導体薄膜太陽電池の製造方法およびその方法で製造された太陽電池
JP2001237441A (ja) * 2000-02-24 2001-08-31 Matsushita Battery Industrial Co Ltd 太陽電池の製造方法および太陽電池
AU2002248199A1 (en) * 2001-12-13 2003-06-30 Midwest Research Institute Semiconductor device with higher oxygen (o2) concentration within window layers and method for making
WO2008126706A1 (en) * 2007-04-06 2008-10-23 Semiconductor Energy Laboratory Co., Ltd. Photovoltaic device and method for manufacturing the same
EP2286456A4 (en) * 2008-05-01 2017-02-22 First Solar, Inc Transparent conductive materials including cadmium stannate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6137048A (en) * 1996-11-07 2000-10-24 Midwest Research Institute Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby
US20070111367A1 (en) * 2005-10-19 2007-05-17 Basol Bulent M Method and apparatus for converting precursor layers into photovoltaic absorbers
US20070193623A1 (en) * 2006-02-22 2007-08-23 Guardian Industries Corp. Electrode structure for use in electronic device and method of making same
US20090014055A1 (en) * 2006-03-18 2009-01-15 Solyndra, Inc. Photovoltaic Modules Having a Filling Material

Also Published As

Publication number Publication date
AU2010208530A1 (en) 2011-08-18
EP2392025A1 (en) 2011-12-07
EP2392025A4 (en) 2012-07-11
TW201034207A (en) 2010-09-16
KR20110107402A (ko) 2011-09-30
WO2010088059A1 (en) 2010-08-05
EP2392025B1 (en) 2013-09-04
JP2012516573A (ja) 2012-07-19
CN102365707A (zh) 2012-02-29
US20100186815A1 (en) 2010-07-29

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