JP2010153827A5 - - Google Patents

Download PDF

Info

Publication number
JP2010153827A5
JP2010153827A5 JP2009263770A JP2009263770A JP2010153827A5 JP 2010153827 A5 JP2010153827 A5 JP 2010153827A5 JP 2009263770 A JP2009263770 A JP 2009263770A JP 2009263770 A JP2009263770 A JP 2009263770A JP 2010153827 A5 JP2010153827 A5 JP 2010153827A5
Authority
JP
Japan
Prior art keywords
semiconductor region
semiconductor
impurity
crystalline
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009263770A
Other languages
English (en)
Japanese (ja)
Other versions
JP5503946B2 (ja
JP2010153827A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009263770A priority Critical patent/JP5503946B2/ja
Priority claimed from JP2009263770A external-priority patent/JP5503946B2/ja
Publication of JP2010153827A publication Critical patent/JP2010153827A/ja
Publication of JP2010153827A5 publication Critical patent/JP2010153827A5/ja
Application granted granted Critical
Publication of JP5503946B2 publication Critical patent/JP5503946B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2009263770A 2008-11-28 2009-11-19 光電変換装置 Expired - Fee Related JP5503946B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009263770A JP5503946B2 (ja) 2008-11-28 2009-11-19 光電変換装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008303441 2008-11-28
JP2008303441 2008-11-28
JP2009263770A JP5503946B2 (ja) 2008-11-28 2009-11-19 光電変換装置

Publications (3)

Publication Number Publication Date
JP2010153827A JP2010153827A (ja) 2010-07-08
JP2010153827A5 true JP2010153827A5 (enExample) 2012-12-27
JP5503946B2 JP5503946B2 (ja) 2014-05-28

Family

ID=42229734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009263770A Expired - Fee Related JP5503946B2 (ja) 2008-11-28 2009-11-19 光電変換装置

Country Status (4)

Country Link
US (1) US20100139766A1 (enExample)
JP (1) JP5503946B2 (enExample)
CN (1) CN101752433B (enExample)
TW (1) TWI488317B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8704083B2 (en) * 2010-02-11 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and fabrication method thereof
US9076909B2 (en) * 2010-06-18 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
US9159939B2 (en) * 2011-07-21 2015-10-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
JP5933495B2 (ja) * 2012-09-28 2016-06-08 富士フイルム株式会社 有機電界発光素子及び有機電界発光素子の製造方法
US9905837B2 (en) * 2014-08-21 2018-02-27 Sony Corporation Imaging element, solid-state imaging device, and electronic device
JP6139731B2 (ja) * 2016-03-23 2017-05-31 株式会社半導体エネルギー研究所 光電変換装置の作製方法
CN108987522A (zh) * 2018-07-25 2018-12-11 京东方科技集团股份有限公司 一种光电传感器、光电传感组件及其制作方法
CN113860410B (zh) * 2021-09-30 2022-06-10 海南大学 一种全角度太阳能高效驱动水蒸发仿生材料及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4878097A (en) * 1984-05-15 1989-10-31 Eastman Kodak Company Semiconductor photoelectric conversion device and method for making same
US6413805B1 (en) * 1993-03-12 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device forming method
US5677236A (en) * 1995-02-24 1997-10-14 Mitsui Toatsu Chemicals, Inc. Process for forming a thin microcrystalline silicon semiconductor film
US6472248B2 (en) * 1999-07-04 2002-10-29 Canon Kabushiki Kaisha Microcrystalline series photovoltaic element and process for fabrication of same
US6204156B1 (en) * 1999-09-02 2001-03-20 Micron Technology, Inc. Method to fabricate an intrinsic polycrystalline silicon film
US6858308B2 (en) * 2001-03-12 2005-02-22 Canon Kabushiki Kaisha Semiconductor element, and method of forming silicon-based film
KR100627203B1 (ko) * 2001-08-14 2006-09-22 제이에스알 가부시끼가이샤 실란 조성물, 실리콘막의 형성법 및 태양 전지의 제조법
JP4240984B2 (ja) * 2002-10-08 2009-03-18 三洋電機株式会社 光電変換装置
US20050236030A1 (en) * 2003-11-27 2005-10-27 Kyocera Corporation Photoelectric conversion device and method for manufacturing the same
TWI273719B (en) * 2005-12-30 2007-02-11 Ind Tech Res Inst Nanocrystal and photovoltaics applying the same
US8049103B2 (en) * 2006-01-18 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8278739B2 (en) * 2006-03-20 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor film, semiconductor device, and method for manufacturing thereof
CN101043058A (zh) * 2006-03-20 2007-09-26 上海太阳能科技有限公司 非晶硅－晶体硅异质结太阳电池
TWM323112U (en) * 2006-12-28 2007-12-01 Advance Design Technology Inc Thin film solar-cell with multi level microcrystalline silicon
TW200832714A (en) * 2007-01-29 2008-08-01 Innolux Display Corp Fabricating method for low temperatyue polysilicon thin film
KR100861548B1 (ko) * 2007-04-27 2008-10-02 엘지전자 주식회사 박막형 태양전지와 그의 제조방법

Similar Documents

Publication Publication Date Title
JP2010153827A5 (enExample)
JP2009283916A5 (enExample)
Veeralingam et al. Record-high responsivity and detectivity of a flexible deep-ultraviolet photodetector based on solid state-assisted synthesized hBN nanosheets
JP2009295970A5 (enExample)
CN105624643B (zh) 一种大面积硒掺杂二硫化钼薄膜材料的制备方法
Sui et al. Temperature-dependent nitrogen configuration of N-doped graphene by chemical vapor deposition
CN104036878B (zh) 一种石墨烯和碳纳米管三维结构材料的制备方法
CN103194795B (zh) 一种低成本制备大尺寸单晶石墨烯的方法
JP2009071290A5 (enExample)
JP2012151506A5 (enExample)
JP2009283923A5 (enExample)
WO2012002995A3 (en) Thin films and methods of making them using cyclohexasilane
JP2012084860A5 (enExample)
JP2012114423A5 (enExample)
Leung et al. Large scale, flexible and three-dimensional quasi-ordered aluminum nanospikes for thin film photovoltaics with omnidirectional light trapping and optimized electrical design
JP2012049517A5 (enExample)
JP2012069930A5 (enExample)
CN104045075B (zh) 一种利用化学气相沉积法制备硫掺杂石墨烯的方法
JP2011071498A5 (ja) 半導体装置の作製方法
JP2011044704A5 (ja) 微結晶半導体膜の作製方法および半導体装置の作製方法
JP2003298077A (ja) 太陽電池
CN104047060B (zh) 一种对石墨烯进行硫掺杂的方法
JP2007186413A5 (enExample)
JP2012114425A5 (enExample)
CN102268736B (zh) 一种碳化硅纳米线阵列的气相层间扩散反应工艺制备方法