JP5503946B2 - 光電変換装置 - Google Patents

光電変換装置 Download PDF

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Publication number
JP5503946B2
JP5503946B2 JP2009263770A JP2009263770A JP5503946B2 JP 5503946 B2 JP5503946 B2 JP 5503946B2 JP 2009263770 A JP2009263770 A JP 2009263770A JP 2009263770 A JP2009263770 A JP 2009263770A JP 5503946 B2 JP5503946 B2 JP 5503946B2
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Japan
Prior art keywords
semiconductor
semiconductor layer
electrode
crystal
layer
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Expired - Fee Related
Application number
JP2009263770A
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English (en)
Japanese (ja)
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JP2010153827A5 (enExample
JP2010153827A (ja
Inventor
聡志 鳥海
俊弥 遠藤
絵梨子 大森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2009263770A priority Critical patent/JP5503946B2/ja
Publication of JP2010153827A publication Critical patent/JP2010153827A/ja
Publication of JP2010153827A5 publication Critical patent/JP2010153827A5/ja
Application granted granted Critical
Publication of JP5503946B2 publication Critical patent/JP5503946B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H10F77/1645—Polycrystalline semiconductors including only Group IV materials including microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Photovoltaic Devices (AREA)
JP2009263770A 2008-11-28 2009-11-19 光電変換装置 Expired - Fee Related JP5503946B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009263770A JP5503946B2 (ja) 2008-11-28 2009-11-19 光電変換装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008303441 2008-11-28
JP2008303441 2008-11-28
JP2009263770A JP5503946B2 (ja) 2008-11-28 2009-11-19 光電変換装置

Publications (3)

Publication Number Publication Date
JP2010153827A JP2010153827A (ja) 2010-07-08
JP2010153827A5 JP2010153827A5 (enExample) 2012-12-27
JP5503946B2 true JP5503946B2 (ja) 2014-05-28

Family

ID=42229734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009263770A Expired - Fee Related JP5503946B2 (ja) 2008-11-28 2009-11-19 光電変換装置

Country Status (4)

Country Link
US (1) US20100139766A1 (enExample)
JP (1) JP5503946B2 (enExample)
CN (1) CN101752433B (enExample)
TW (1) TWI488317B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8704083B2 (en) * 2010-02-11 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and fabrication method thereof
US9076909B2 (en) * 2010-06-18 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
US9159939B2 (en) * 2011-07-21 2015-10-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
JP5933495B2 (ja) * 2012-09-28 2016-06-08 富士フイルム株式会社 有機電界発光素子及び有機電界発光素子の製造方法
US9905837B2 (en) * 2014-08-21 2018-02-27 Sony Corporation Imaging element, solid-state imaging device, and electronic device
JP6139731B2 (ja) * 2016-03-23 2017-05-31 株式会社半導体エネルギー研究所 光電変換装置の作製方法
CN108987522A (zh) * 2018-07-25 2018-12-11 京东方科技集团股份有限公司 一种光电传感器、光电传感组件及其制作方法
CN113860410B (zh) * 2021-09-30 2022-06-10 海南大学 一种全角度太阳能高效驱动水蒸发仿生材料及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4878097A (en) * 1984-05-15 1989-10-31 Eastman Kodak Company Semiconductor photoelectric conversion device and method for making same
US6413805B1 (en) * 1993-03-12 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device forming method
US5677236A (en) * 1995-02-24 1997-10-14 Mitsui Toatsu Chemicals, Inc. Process for forming a thin microcrystalline silicon semiconductor film
US6472248B2 (en) * 1999-07-04 2002-10-29 Canon Kabushiki Kaisha Microcrystalline series photovoltaic element and process for fabrication of same
US6204156B1 (en) * 1999-09-02 2001-03-20 Micron Technology, Inc. Method to fabricate an intrinsic polycrystalline silicon film
US6858308B2 (en) * 2001-03-12 2005-02-22 Canon Kabushiki Kaisha Semiconductor element, and method of forming silicon-based film
KR100627203B1 (ko) * 2001-08-14 2006-09-22 제이에스알 가부시끼가이샤 실란 조성물, 실리콘막의 형성법 및 태양 전지의 제조법
JP4240984B2 (ja) * 2002-10-08 2009-03-18 三洋電機株式会社 光電変換装置
US20050236030A1 (en) * 2003-11-27 2005-10-27 Kyocera Corporation Photoelectric conversion device and method for manufacturing the same
TWI273719B (en) * 2005-12-30 2007-02-11 Ind Tech Res Inst Nanocrystal and photovoltaics applying the same
US8049103B2 (en) * 2006-01-18 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8278739B2 (en) * 2006-03-20 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor film, semiconductor device, and method for manufacturing thereof
CN101043058A (zh) * 2006-03-20 2007-09-26 上海太阳能科技有限公司 非晶硅－晶体硅异质结太阳电池
TWM323112U (en) * 2006-12-28 2007-12-01 Advance Design Technology Inc Thin film solar-cell with multi level microcrystalline silicon
TW200832714A (en) * 2007-01-29 2008-08-01 Innolux Display Corp Fabricating method for low temperatyue polysilicon thin film
KR100861548B1 (ko) * 2007-04-27 2008-10-02 엘지전자 주식회사 박막형 태양전지와 그의 제조방법

Also Published As

Publication number Publication date
US20100139766A1 (en) 2010-06-10
CN101752433B (zh) 2013-11-20
CN101752433A (zh) 2010-06-23
TW201036181A (en) 2010-10-01
JP2010153827A (ja) 2010-07-08
TWI488317B (zh) 2015-06-11

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