CN101752433B - 光电转换装置及光电转换装置的制造方法 - Google Patents
光电转换装置及光电转换装置的制造方法 Download PDFInfo
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- CN101752433B CN101752433B CN2009101783807A CN200910178380A CN101752433B CN 101752433 B CN101752433 B CN 101752433B CN 2009101783807 A CN2009101783807 A CN 2009101783807A CN 200910178380 A CN200910178380 A CN 200910178380A CN 101752433 B CN101752433 B CN 101752433B
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
- H10F77/164—Polycrystalline semiconductors
- H10F77/1642—Polycrystalline semiconductors including only Group IV materials
- H10F77/1645—Polycrystalline semiconductors including only Group IV materials including microcrystalline silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
- H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
- H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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| JP2008-303441 | 2008-11-28 | ||
| JP2008303441 | 2008-11-28 |
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| Publication Number | Publication Date |
|---|---|
| CN101752433A CN101752433A (zh) | 2010-06-23 |
| CN101752433B true CN101752433B (zh) | 2013-11-20 |
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| CN2009101783807A Expired - Fee Related CN101752433B (zh) | 2008-11-28 | 2009-11-25 | 光电转换装置及光电转换装置的制造方法 |
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| US (1) | US20100139766A1 (enExample) |
| JP (1) | JP5503946B2 (enExample) |
| CN (1) | CN101752433B (enExample) |
| TW (1) | TWI488317B (enExample) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8704083B2 (en) * | 2010-02-11 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and fabrication method thereof |
| US9076909B2 (en) * | 2010-06-18 | 2015-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method for manufacturing the same |
| US9159939B2 (en) * | 2011-07-21 | 2015-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
| JP5933495B2 (ja) * | 2012-09-28 | 2016-06-08 | 富士フイルム株式会社 | 有機電界発光素子及び有機電界発光素子の製造方法 |
| US9905837B2 (en) * | 2014-08-21 | 2018-02-27 | Sony Corporation | Imaging element, solid-state imaging device, and electronic device |
| JP6139731B2 (ja) * | 2016-03-23 | 2017-05-31 | 株式会社半導体エネルギー研究所 | 光電変換装置の作製方法 |
| CN108987522A (zh) * | 2018-07-25 | 2018-12-11 | 京东方科技集团股份有限公司 | 一种光电传感器、光电传感组件及其制作方法 |
| CN113860410B (zh) * | 2021-09-30 | 2022-06-10 | 海南大学 | 一种全角度太阳能高效驱动水蒸发仿生材料及其制备方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5677236A (en) * | 1995-02-24 | 1997-10-14 | Mitsui Toatsu Chemicals, Inc. | Process for forming a thin microcrystalline silicon semiconductor film |
| CN101043026A (zh) * | 2006-03-20 | 2007-09-26 | 株式会社半导体能源研究所 | 晶体半导体薄膜,半导体器件及其制造方法 |
| CN101043058A (zh) * | 2006-03-20 | 2007-09-26 | 上海太阳能科技有限公司 | 非晶硅－晶体硅异质结太阳电池 |
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|---|---|---|---|---|
| US4878097A (en) * | 1984-05-15 | 1989-10-31 | Eastman Kodak Company | Semiconductor photoelectric conversion device and method for making same |
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- 2009-11-19 JP JP2009263770A patent/JP5503946B2/ja not_active Expired - Fee Related
- 2009-11-23 US US12/623,888 patent/US20100139766A1/en not_active Abandoned
- 2009-11-24 TW TW098139926A patent/TWI488317B/zh not_active IP Right Cessation
- 2009-11-25 CN CN2009101783807A patent/CN101752433B/zh not_active Expired - Fee Related
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| CN101043026A (zh) * | 2006-03-20 | 2007-09-26 | 株式会社半导体能源研究所 | 晶体半导体薄膜,半导体器件及其制造方法 |
| CN101043058A (zh) * | 2006-03-20 | 2007-09-26 | 上海太阳能科技有限公司 | 非晶硅－晶体硅异质结太阳电池 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20100139766A1 (en) | 2010-06-10 |
| JP5503946B2 (ja) | 2014-05-28 |
| CN101752433A (zh) | 2010-06-23 |
| TW201036181A (en) | 2010-10-01 |
| JP2010153827A (ja) | 2010-07-08 |
| TWI488317B (zh) | 2015-06-11 |
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