JP2012114425A5 - - Google Patents

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Publication number
JP2012114425A5
JP2012114425A5 JP2011241751A JP2011241751A JP2012114425A5 JP 2012114425 A5 JP2012114425 A5 JP 2012114425A5 JP 2011241751 A JP2011241751 A JP 2011241751A JP 2011241751 A JP2011241751 A JP 2011241751A JP 2012114425 A5 JP2012114425 A5 JP 2012114425A5
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JP
Japan
Prior art keywords
silicon layer
gas
upper electrode
amorphous silicon
photoelectric conversion
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JP2011241751A
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English (en)
Japanese (ja)
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JP2012114425A (ja
JP5813465B2 (ja
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Priority to JP2011241751A priority Critical patent/JP5813465B2/ja
Priority claimed from JP2011241751A external-priority patent/JP5813465B2/ja
Publication of JP2012114425A publication Critical patent/JP2012114425A/ja
Publication of JP2012114425A5 publication Critical patent/JP2012114425A5/ja
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Publication of JP5813465B2 publication Critical patent/JP5813465B2/ja
Expired - Fee Related legal-status Critical Current
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JP2011241751A 2010-11-05 2011-11-03 光電変換装置の作製方法 Expired - Fee Related JP5813465B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011241751A JP5813465B2 (ja) 2010-11-05 2011-11-03 光電変換装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010248289 2010-11-05
JP2010248289 2010-11-05
JP2011241751A JP5813465B2 (ja) 2010-11-05 2011-11-03 光電変換装置の作製方法

Publications (3)

Publication Number Publication Date
JP2012114425A JP2012114425A (ja) 2012-06-14
JP2012114425A5 true JP2012114425A5 (enExample) 2014-10-16
JP5813465B2 JP5813465B2 (ja) 2015-11-17

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JP2011241751A Expired - Fee Related JP5813465B2 (ja) 2010-11-05 2011-11-03 光電変換装置の作製方法

Country Status (2)

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US (1) US8815635B2 (enExample)
JP (1) JP5813465B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8895116B2 (en) 2010-11-04 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of crystalline semiconductor film and manufacturing method of semiconductor device
JP5927027B2 (ja) * 2011-10-05 2016-05-25 株式会社半導体エネルギー研究所 光電変換装置
US20150380581A1 (en) * 2014-06-27 2015-12-31 Michael C. Johnson Passivation of light-receiving surfaces of solar cells with crystalline silicon
DE202014103754U1 (de) 2014-08-13 2015-11-16 Weidmüller Interface GmbH & Co. KG Anschlussklemme für einen durchgehenden elektrischen Leiter
CN111063757A (zh) * 2019-11-29 2020-04-24 晋能光伏技术有限责任公司 一种高效晶硅/非晶硅异质结太阳能电池及其制备方法

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JPH0752718B2 (ja) 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 薄膜形成方法
US5308417A (en) 1991-09-12 1994-05-03 Applied Materials, Inc. Uniformity for magnetically enhanced plasma chambers
JPH0613361A (ja) 1992-06-26 1994-01-21 Tokyo Electron Ltd 処理装置
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TW357404B (en) 1993-12-24 1999-05-01 Tokyo Electron Ltd Apparatus and method for processing of plasma
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JP3801730B2 (ja) 1997-05-09 2006-07-26 株式会社半導体エネルギー研究所 プラズマｃｖｄ装置及びそれを用いた薄膜形成方法
US6352593B1 (en) 1997-08-11 2002-03-05 Torrex Equipment Corp. Mini-batch process chamber
US6251216B1 (en) 1997-12-17 2001-06-26 Matsushita Electronics Corporation Apparatus and method for plasma processing
JP4130255B2 (ja) 1998-04-08 2008-08-06 キヤノンアネルバ株式会社 プラズマ処理装置
US6402847B1 (en) 1998-11-27 2002-06-11 Kabushiki Kaisha Toshiba Dry processing apparatus and dry processing method
JP3682178B2 (ja) 1999-03-15 2005-08-10 株式会社東芝 プラズマ処理方法及びプラズマ処理装置
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JP4292002B2 (ja) 2002-12-18 2009-07-08 株式会社日立国際電気 プラズマ処理装置
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TWI453711B (zh) 2007-03-21 2014-09-21 Semiconductor Energy Lab 顯示裝置
US8235001B2 (en) 2007-04-02 2012-08-07 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device
JP5058909B2 (ja) 2007-08-17 2012-10-24 株式会社半導体エネルギー研究所 プラズマｃｖｄ装置及び薄膜トランジスタの作製方法
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US8895116B2 (en) 2010-11-04 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of crystalline semiconductor film and manufacturing method of semiconductor device

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