JP2009543355A - 進歩型フロントエンド処理のためのクラスターツール - Google Patents

進歩型フロントエンド処理のためのクラスターツール Download PDF

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Publication number
JP2009543355A
JP2009543355A JP2009518542A JP2009518542A JP2009543355A JP 2009543355 A JP2009543355 A JP 2009543355A JP 2009518542 A JP2009518542 A JP 2009518542A JP 2009518542 A JP2009518542 A JP 2009518542A JP 2009543355 A JP2009543355 A JP 2009543355A
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Japan
Prior art keywords
substrate
chamber
processing
support
region
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Pending
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JP2009518542A
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English (en)
Japanese (ja)
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JP2009543355A5 (enExample
Inventor
ランディア サクール，
アルカディー サモイロフ，
パー‐オヴ ハンソン，
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Applied Materials Inc
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Applied Materials Inc
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Priority claimed from US11/460,864 external-priority patent/US20070134821A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2009543355A publication Critical patent/JP2009543355A/ja
Publication of JP2009543355A5 publication Critical patent/JP2009543355A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2009518542A 2006-07-03 2007-06-27 進歩型フロントエンド処理のためのクラスターツール Pending JP2009543355A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US80651806P 2006-07-03 2006-07-03
US11/460,864 US20070134821A1 (en) 2004-11-22 2006-07-28 Cluster tool for advanced front-end processing
PCT/US2007/072264 WO2008005773A2 (en) 2006-07-03 2007-06-27 Cluster tool for advanced front-end processing

Publications (2)

Publication Number Publication Date
JP2009543355A true JP2009543355A (ja) 2009-12-03
JP2009543355A5 JP2009543355A5 (enExample) 2010-08-05

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Family Applications (1)

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JP2009518542A Pending JP2009543355A (ja) 2006-07-03 2007-06-27 進歩型フロントエンド処理のためのクラスターツール

Country Status (5)

Country Link
EP (1) EP2041774A2 (enExample)
JP (1) JP2009543355A (enExample)
KR (1) KR20090035578A (enExample)
TW (1) TW200811916A (enExample)
WO (1) WO2008005773A2 (enExample)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013514673A (ja) * 2009-12-17 2013-04-25 アプライド マテリアルズ インコーポレイテッド Ｎｍｏｓエピ層の形成方法
JP2013543651A (ja) * 2010-09-14 2013-12-05 アプライド マテリアルズ インコーポレイテッド デバイス歩留まり向上のための移送チャンバ計量
JP2016072625A (ja) * 2014-09-30 2016-05-09 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマ援用原子層堆積におけるｒｆ補償のための方法及び装置
KR20160126914A (ko) * 2015-04-23 2016-11-02 어플라이드 머티어리얼스, 인코포레이티드 반도체 프로세싱 시스템에서의 외부 기판 회전
JP2018527456A (ja) * 2015-06-19 2018-09-20 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 多層金属誘電体膜のｐｖｄ堆積とアニール
JP2019501518A (ja) * 2015-11-13 2019-01-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ， Ｉｎｃ． 半導体デバイスの処理方法並びに半導体デバイスの処理システムおよび装置
US10697059B2 (en) 2017-09-15 2020-06-30 Lam Research Corporation Thickness compensation by modulation of number of deposition cycles as a function of chamber accumulation for wafer to wafer film thickness matching
JP2020123675A (ja) * 2019-01-30 2020-08-13 日立金属株式会社 半導体製造装置の管理システム及びその方法
KR20200124315A (ko) * 2018-03-20 2020-11-02 도쿄엘렉트론가부시키가이샤 통합형 반도체 공정 모듈을 포함하는 자기 인식 및 보정 이종 플랫폼, 및 이를 사용하기 위한 방법
JP2021518673A (ja) * 2018-03-20 2021-08-02 東京エレクトロン株式会社 統合的な計測を伴う基板処理ツール並びに使用方法
JP2021518674A (ja) * 2018-03-20 2021-08-02 東京エレクトロン株式会社 統合的な半導体処理モジュールを組み込んだ自己認識及び補正異種プラットフォーム及びその使用方法
JP2021168422A (ja) * 2017-09-20 2021-10-21 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム
CN114256327A (zh) * 2020-09-25 2022-03-29 爱思开海力士有限公司 半导体器件及其制造方法
JP2023014989A (ja) * 2021-07-07 2023-01-31 アプライド マテリアルズ インコーポレイテッド エピタキシャル成長のための統合湿式洗浄
JP2023014988A (ja) * 2021-07-07 2023-01-31 アプライド マテリアルズ インコーポレイテッド ゲートスタック形成のための統合湿式洗浄
JP2024536938A (ja) * 2021-09-03 2024-10-09 アプライド マテリアルズ インコーポレイテッド １以上の圧力安定化チャンバを有するクラスタツール、システム、及び方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8022372B2 (en) 2008-02-15 2011-09-20 Veeco Instruments Inc. Apparatus and method for batch non-contact material characterization
US7838431B2 (en) * 2008-06-14 2010-11-23 Applied Materials, Inc. Method for surface treatment of semiconductor substrates
US7964858B2 (en) 2008-10-21 2011-06-21 Applied Materials, Inc. Ultraviolet reflector with coolant gas holes and method
US20120118227A1 (en) * 2009-08-13 2012-05-17 Kim Nam Jin Apparatus for forming layer
WO2012166770A2 (en) 2011-05-31 2012-12-06 Veeco Instruments Inc. Heated wafer carrier profiling
WO2014008162A1 (en) * 2012-07-02 2014-01-09 Applied Materials, Inc. Aluminum-nitride buffer and active layers by physical vapor deposition
US9147592B2 (en) * 2012-08-08 2015-09-29 Applied Materials, Inc. Linked vacuum processing tools and methods of using the same
KR101463984B1 (ko) * 2013-02-15 2014-11-26 최대규 플라즈마 처리 시스템
US9627608B2 (en) * 2014-09-11 2017-04-18 Lam Research Corporation Dielectric repair for emerging memory devices
US20160240405A1 (en) * 2015-02-12 2016-08-18 Applied Materials, Inc. Stand alone anneal system for semiconductor wafers
US20180323060A1 (en) * 2015-10-28 2018-11-08 Tokyo Electron Limited Substrate processing method, substrate processing apparatus, substrate processing system and recording medium
KR20190041030A (ko) * 2016-09-15 2019-04-19 어플라이드 머티어리얼스, 인코포레이티드 반도체 프로세스를 위한 통합 시스템
TWI700750B (zh) * 2017-01-24 2020-08-01 美商應用材料股份有限公司 用於介電薄膜的選擇性沉積之方法及設備
JP7158133B2 (ja) * 2017-03-03 2022-10-21 アプライド マテリアルズ インコーポレイテッド 雰囲気が制御された移送モジュール及び処理システム
CN112575309B (zh) * 2017-04-28 2023-03-07 应用材料公司 清洁制造oled使用的真空系统的方法及制造oled的方法和设备
CN112204169A (zh) * 2018-05-16 2021-01-08 应用材料公司 原子层自对准的基板处理和整合式成套工具
US20190362989A1 (en) * 2018-05-25 2019-11-28 Applied Materials, Inc. Substrate manufacturing apparatus and methods with factory interface chamber heating
CN111507076B (zh) * 2019-01-29 2022-07-05 北京新唐思创教育科技有限公司 一种用于教学系统的共案课件制作方法、装置和终端
FI129628B (en) 2019-09-25 2022-05-31 Beneq Oy Method and apparatus for processing surface of a substrate
CN115485822A (zh) * 2020-08-03 2022-12-16 应用材料公司 在批次热处理腔室中的晶片边缘温度校正
WO2022186775A1 (en) * 2021-03-02 2022-09-09 Agency For Science, Technology And Research A preparation chamber for cleaning and repair sapphire surface for the epitaxial growth of compound materials
US20230032146A1 (en) * 2021-07-27 2023-02-02 Applied Materials, Inc. Simultaneous in process metrology for cluster tool architecture
KR102418530B1 (ko) * 2021-10-12 2022-07-07 주식회사 바코솔루션 반도체 기판 처리 장치
KR102424853B1 (ko) * 2021-10-12 2022-07-25 주식회사 바코솔루션 반도체 기판 처리 장치
KR102418534B1 (ko) * 2021-10-12 2022-07-07 주식회사 바코솔루션 반도체 기판의 처리를 위한 클러스터 툴 및 그 제어 방법
CN114000192B (zh) * 2021-10-29 2023-10-13 北京北方华创微电子装备有限公司 半导体工艺设备以及晶圆位置状态的监测方法
CN114904822B (zh) * 2022-03-31 2023-09-26 上海果纳半导体技术有限公司 机械手清洗装置、清洗方法及半导体设备

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0249428A (ja) * 1988-05-12 1990-02-19 Mitsubishi Electric Corp 半導体基板表面に薄膜を形成する方法およびその装置
JPH05102502A (ja) * 1991-10-09 1993-04-23 Mitsui Toatsu Chem Inc 非晶質太陽電池
JPH05275343A (ja) * 1992-03-27 1993-10-22 Toshiba Corp 基板処理装置
JPH09186108A (ja) * 1995-12-27 1997-07-15 Tokyo Electron Ltd クラスタツール装置
JP2002502108A (ja) * 1997-12-08 2002-01-22 クエスター テクノロジー インコーポレイテッド 電磁放射を用いた半導体の表面変更
JP2002270596A (ja) * 2001-03-12 2002-09-20 Matsushita Electric Ind Co Ltd 半導体装置の製造装置
JP2003115578A (ja) * 2001-10-05 2003-04-18 Canon Inc 不揮発固体磁気メモリ装置、該不揮発固体磁気メモリ装置の製造方法およびマルチ・チップ・パッケージ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6081334A (en) * 1998-04-17 2000-06-27 Applied Materials, Inc Endpoint detection for semiconductor processes
US7431795B2 (en) * 2004-07-29 2008-10-07 Applied Materials, Inc. Cluster tool and method for process integration in manufacture of a gate structure of a field effect transistor

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0249428A (ja) * 1988-05-12 1990-02-19 Mitsubishi Electric Corp 半導体基板表面に薄膜を形成する方法およびその装置
JPH05102502A (ja) * 1991-10-09 1993-04-23 Mitsui Toatsu Chem Inc 非晶質太陽電池
JPH05275343A (ja) * 1992-03-27 1993-10-22 Toshiba Corp 基板処理装置
JPH09186108A (ja) * 1995-12-27 1997-07-15 Tokyo Electron Ltd クラスタツール装置
JP2002502108A (ja) * 1997-12-08 2002-01-22 クエスター テクノロジー インコーポレイテッド 電磁放射を用いた半導体の表面変更
JP2002270596A (ja) * 2001-03-12 2002-09-20 Matsushita Electric Ind Co Ltd 半導体装置の製造装置
JP2003115578A (ja) * 2001-10-05 2003-04-18 Canon Inc 不揮発固体磁気メモリ装置、該不揮発固体磁気メモリ装置の製造方法およびマルチ・チップ・パッケージ

Cited By (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013514673A (ja) * 2009-12-17 2013-04-25 アプライド マテリアルズ インコーポレイテッド Ｎｍｏｓエピ層の形成方法
JP2013543651A (ja) * 2010-09-14 2013-12-05 アプライド マテリアルズ インコーポレイテッド デバイス歩留まり向上のための移送チャンバ計量
US10103288B2 (en) 2010-09-14 2018-10-16 Applied Materials, Inc. Transfer chamber metrology for improved device yield
JP2016072625A (ja) * 2014-09-30 2016-05-09 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマ援用原子層堆積におけるｒｆ補償のための方法及び装置
KR20160126914A (ko) * 2015-04-23 2016-11-02 어플라이드 머티어리얼스, 인코포레이티드 반도체 프로세싱 시스템에서의 외부 기판 회전
JP2017005242A (ja) * 2015-04-23 2017-01-05 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 半導体処理システムにおける外部基板回転
US11574825B2 (en) 2015-04-23 2023-02-07 Applied Materials, Inc. External substrate system rotation in a semiconductor processing system
JP2022023889A (ja) * 2015-04-23 2022-02-08 アプライド マテリアルズ インコーポレイテッド 半導体処理システムにおける外部基板回転
KR102543643B1 (ko) * 2015-04-23 2023-06-13 어플라이드 머티어리얼스, 인코포레이티드 반도체 프로세싱 시스템에서의 외부 기판 회전
JP7350035B2 (ja) 2015-04-23 2023-09-25 アプライド マテリアルズ インコーポレイテッド 半導体処理システムにおける外部基板回転
US10879177B2 (en) 2015-06-19 2020-12-29 Applied Materials, Inc. PVD deposition and anneal of multi-layer metal-dielectric film
JP2018527456A (ja) * 2015-06-19 2018-09-20 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 多層金属誘電体膜のｐｖｄ堆積とアニール
JP2019501518A (ja) * 2015-11-13 2019-01-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ， Ｉｎｃ． 半導体デバイスの処理方法並びに半導体デバイスの処理システムおよび装置
US10697059B2 (en) 2017-09-15 2020-06-30 Lam Research Corporation Thickness compensation by modulation of number of deposition cycles as a function of chamber accumulation for wafer to wafer film thickness matching
US11286560B2 (en) 2017-09-15 2022-03-29 Lam Research Corporation Thickness compensation by modulation of number of deposition cycles as a function of chamber accumulation for wafer to wafer film thickness matching
JP7162705B2 (ja) 2017-09-20 2022-10-28 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム
JP2021168422A (ja) * 2017-09-20 2021-10-21 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム
JP7295359B2 (ja) 2018-03-20 2023-06-21 東京エレクトロン株式会社 統合的な計測を伴う基板処理ツール並びに使用方法
KR20200124315A (ko) * 2018-03-20 2020-11-02 도쿄엘렉트론가부시키가이샤 통합형 반도체 공정 모듈을 포함하는 자기 인식 및 보정 이종 플랫폼, 및 이를 사용하기 위한 방법
KR102648517B1 (ko) * 2018-03-20 2024-03-15 도쿄엘렉트론가부시키가이샤 통합형 반도체 공정 모듈을 포함하는 자기 인식 및 보정 이종 플랫폼, 및 이를 사용하기 위한 방법
JP7402399B2 (ja) 2018-03-20 2023-12-21 東京エレクトロン株式会社 統合的な半導体処理モジュールを組み込んだ自己認識及び補正異種プラットフォーム及びその使用方法
JP2021518673A (ja) * 2018-03-20 2021-08-02 東京エレクトロン株式会社 統合的な計測を伴う基板処理ツール並びに使用方法
JP7348440B2 (ja) 2018-03-20 2023-09-21 東京エレクトロン株式会社 統合的な半導体処理モジュールを組み込んだ自己認識及び補正異種プラットフォーム及びその使用方法
JP2021518674A (ja) * 2018-03-20 2021-08-02 東京エレクトロン株式会社 統合的な半導体処理モジュールを組み込んだ自己認識及び補正異種プラットフォーム及びその使用方法
CN112106182A (zh) * 2018-03-20 2020-12-18 东京毅力科创株式会社 结合有集成半导体加工模块的自感知校正异构平台及其使用方法
JP2021518672A (ja) * 2018-03-20 2021-08-02 東京エレクトロン株式会社 統合的な半導体処理モジュールを組み込んだ自己認識及び補正異種プラットフォーム及びその使用方法
JP7679160B2 (ja) 2019-01-30 2025-05-19 株式会社プロテリアル 半導体製造装置の管理システム及びその方法
JP7206961B2 (ja) 2019-01-30 2023-01-18 日立金属株式会社 半導体製造装置の管理システム及びその方法
JP2020123675A (ja) * 2019-01-30 2020-08-13 日立金属株式会社 半導体製造装置の管理システム及びその方法
CN114256327B (zh) * 2020-09-25 2025-06-13 爱思开海力士有限公司 半导体器件及其制造方法
US20220102193A1 (en) * 2020-09-25 2022-03-31 SK Hynix Inc. Semiconductor device and method for fabricating the same
US11929279B2 (en) * 2020-09-25 2024-03-12 SK Hynix Inc. Semiconductor device including semiconductor liner and method for fabricating the same
CN114256327A (zh) * 2020-09-25 2022-03-29 爱思开海力士有限公司 半导体器件及其制造方法
JP2023014989A (ja) * 2021-07-07 2023-01-31 アプライド マテリアルズ インコーポレイテッド エピタキシャル成長のための統合湿式洗浄
JP7485729B2 (ja) 2021-07-07 2024-05-16 アプライド マテリアルズ インコーポレイテッド エピタキシャル成長のための統合湿式洗浄
JP7478776B2 (ja) 2021-07-07 2024-05-07 アプライド マテリアルズ インコーポレイテッド ゲートスタック形成のための統合湿式洗浄
JP2023014988A (ja) * 2021-07-07 2023-01-31 アプライド マテリアルズ インコーポレイテッド ゲートスタック形成のための統合湿式洗浄
JP2024536938A (ja) * 2021-09-03 2024-10-09 アプライド マテリアルズ インコーポレイテッド １以上の圧力安定化チャンバを有するクラスタツール、システム、及び方法
JP7747868B2 (ja) 2021-09-03 2025-10-01 アプライド マテリアルズ インコーポレイテッド １以上の圧力安定化チャンバを有するクラスタツール、システム、及び方法

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