JP2009543355A5 - - Google Patents

Download PDF

Info

Publication number
JP2009543355A5
JP2009543355A5 JP2009518542A JP2009518542A JP2009543355A5 JP 2009543355 A5 JP2009543355 A5 JP 2009543355A5 JP 2009518542 A JP2009518542 A JP 2009518542A JP 2009518542 A JP2009518542 A JP 2009518542A JP 2009543355 A5 JP2009543355 A5 JP 2009543355A5
Authority
JP
Japan
Prior art keywords
substrate
chamber
support
processing
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009518542A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009543355A (ja
Filing date
Publication date
Priority claimed from US11/460,864 external-priority patent/US20070134821A1/en
Application filed filed Critical
Priority claimed from PCT/US2007/072264 external-priority patent/WO2008005773A2/en
Publication of JP2009543355A publication Critical patent/JP2009543355A/ja
Publication of JP2009543355A5 publication Critical patent/JP2009543355A5/ja
Pending legal-status Critical Current

Links

JP2009518542A 2006-07-03 2007-06-27 進歩型フロントエンド処理のためのクラスターツール Pending JP2009543355A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US80651806P 2006-07-03 2006-07-03
US11/460,864 US20070134821A1 (en) 2004-11-22 2006-07-28 Cluster tool for advanced front-end processing
PCT/US2007/072264 WO2008005773A2 (en) 2006-07-03 2007-06-27 Cluster tool for advanced front-end processing

Publications (2)

Publication Number Publication Date
JP2009543355A JP2009543355A (ja) 2009-12-03
JP2009543355A5 true JP2009543355A5 (enExample) 2010-08-05

Family

ID=38895329

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009518542A Pending JP2009543355A (ja) 2006-07-03 2007-06-27 進歩型フロントエンド処理のためのクラスターツール

Country Status (5)

Country Link
EP (1) EP2041774A2 (enExample)
JP (1) JP2009543355A (enExample)
KR (1) KR20090035578A (enExample)
TW (1) TW200811916A (enExample)
WO (1) WO2008005773A2 (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8022372B2 (en) * 2008-02-15 2011-09-20 Veeco Instruments Inc. Apparatus and method for batch non-contact material characterization
US7838431B2 (en) * 2008-06-14 2010-11-23 Applied Materials, Inc. Method for surface treatment of semiconductor substrates
US7964858B2 (en) 2008-10-21 2011-06-21 Applied Materials, Inc. Ultraviolet reflector with coolant gas holes and method
EP2465971A2 (en) * 2009-08-13 2012-06-20 Nam Jin Kim Apparatus for forming layer
US8999798B2 (en) 2009-12-17 2015-04-07 Applied Materials, Inc. Methods for forming NMOS EPI layers
US9076827B2 (en) * 2010-09-14 2015-07-07 Applied Materials, Inc. Transfer chamber metrology for improved device yield
TWI525744B (zh) 2011-05-31 2016-03-11 維克儀器公司 加熱之晶圓載體輪廓勘測
JP6272850B2 (ja) * 2012-07-02 2018-01-31 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 物理的気相成長法による窒化アルミニウムの緩衝及び活性層
KR102374689B1 (ko) * 2012-08-08 2022-03-14 어플라이드 머티어리얼스, 인코포레이티드 링크된 진공 프로세싱 툴들 및 그 사용 방법들
KR101463984B1 (ko) * 2013-02-15 2014-11-26 최대규 플라즈마 처리 시스템
US9627608B2 (en) * 2014-09-11 2017-04-18 Lam Research Corporation Dielectric repair for emerging memory devices
US9624578B2 (en) * 2014-09-30 2017-04-18 Lam Research Corporation Method for RF compensation in plasma assisted atomic layer deposition
US20160240405A1 (en) * 2015-02-12 2016-08-18 Applied Materials, Inc. Stand alone anneal system for semiconductor wafers
TWI677046B (zh) * 2015-04-23 2019-11-11 美商應用材料股份有限公司 半導體處理系統中的外部基板材旋轉
US10879177B2 (en) 2015-06-19 2020-12-29 Applied Materials, Inc. PVD deposition and anneal of multi-layer metal-dielectric film
WO2017073396A1 (ja) * 2015-10-28 2017-05-04 東京エレクトロン株式会社 基板処理方法、基板処理装置、基板処理システム及び記憶媒体
CN108352300B (zh) * 2015-11-13 2022-03-29 应用材料股份有限公司 半导体装置处理方法、系统及设备
KR102312122B1 (ko) * 2016-09-15 2021-10-14 어플라이드 머티어리얼스, 인코포레이티드 반도체 프로세스를 위한 통합 시스템
TWI700750B (zh) * 2017-01-24 2020-08-01 美商應用材料股份有限公司 用於介電薄膜的選擇性沉積之方法及設備
JP7158133B2 (ja) * 2017-03-03 2022-10-21 アプライド マテリアルズ インコーポレイテッド 雰囲気が制御された移送モジュール及び処理システム
KR20240001722A (ko) 2017-04-28 2024-01-03 어플라이드 머티어리얼스, 인코포레이티드 Oled 디바이스들의 제조에서 사용되는 진공 시스템을 세정하기 위한 방법, oled 디바이스들을 제조하기 위한 기판 상의 진공 증착을 위한 방법, 및 oled 디바이스들을 제조하기 위한 기판 상의 진공 증착을 위한 장치
US10697059B2 (en) 2017-09-15 2020-06-30 Lam Research Corporation Thickness compensation by modulation of number of deposition cycles as a function of chamber accumulation for wafer to wafer film thickness matching
KR102462379B1 (ko) * 2017-09-20 2022-11-03 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
JP7295359B2 (ja) * 2018-03-20 2023-06-21 東京エレクトロン株式会社 統合的な計測を伴う基板処理ツール並びに使用方法
US20200006100A1 (en) * 2018-03-20 2020-01-02 Tokyo Electron Limited Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using same
CN112074940A (zh) * 2018-03-20 2020-12-11 东京毅力科创株式会社 结合有集成半导体加工模块的自感知校正异构平台及其使用方法
KR20200142601A (ko) * 2018-05-16 2020-12-22 어플라이드 머티어리얼스, 인코포레이티드 원자 층 자기 정렬 기판 프로세싱 및 통합 툴셋
US20190362989A1 (en) * 2018-05-25 2019-11-28 Applied Materials, Inc. Substrate manufacturing apparatus and methods with factory interface chamber heating
CN111507076B (zh) * 2019-01-29 2022-07-05 北京新唐思创教育科技有限公司 一种用于教学系统的共案课件制作方法、装置和终端
JP7206961B2 (ja) 2019-01-30 2023-01-18 日立金属株式会社 半導体製造装置の管理システム及びその方法
FI129628B (en) 2019-09-25 2022-05-31 Beneq Oy Method and apparatus for processing surface of a substrate
JP7584537B2 (ja) * 2020-08-03 2024-11-15 アプライド マテリアルズ インコーポレイテッド バッチ熱処理チャンバにおけるウエハエッジ温度補正
KR20220041358A (ko) * 2020-09-25 2022-04-01 에스케이하이닉스 주식회사 반도체장치 및 그 제조 방법
WO2022186775A1 (en) * 2021-03-02 2022-09-09 Agency For Science, Technology And Research A preparation chamber for cleaning and repair sapphire surface for the epitaxial growth of compound materials
JP7485729B2 (ja) * 2021-07-07 2024-05-16 アプライド マテリアルズ インコーポレイテッド エピタキシャル成長のための統合湿式洗浄
JP7478776B2 (ja) * 2021-07-07 2024-05-07 アプライド マテリアルズ インコーポレイテッド ゲートスタック形成のための統合湿式洗浄
US20230032146A1 (en) * 2021-07-27 2023-02-02 Applied Materials, Inc. Simultaneous in process metrology for cluster tool architecture
WO2023033947A1 (en) * 2021-09-03 2023-03-09 Applied Materials, Inc. Cluster tools, systems, and methods having one or more pressure stabilization chambers
KR102418534B1 (ko) * 2021-10-12 2022-07-07 주식회사 바코솔루션 반도체 기판의 처리를 위한 클러스터 툴 및 그 제어 방법
KR102424853B1 (ko) * 2021-10-12 2022-07-25 주식회사 바코솔루션 반도체 기판 처리 장치
KR102418530B1 (ko) * 2021-10-12 2022-07-07 주식회사 바코솔루션 반도체 기판 처리 장치
CN114000192B (zh) * 2021-10-29 2023-10-13 北京北方华创微电子装备有限公司 半导体工艺设备以及晶圆位置状态的监测方法
CN114904822B (zh) * 2022-03-31 2023-09-26 上海果纳半导体技术有限公司 机械手清洗装置、清洗方法及半导体设备

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2729310B2 (ja) * 1988-05-12 1998-03-18 三菱電機株式会社 半導体基板表面に薄膜を形成する装置
JP3107425B2 (ja) * 1991-10-09 2000-11-06 三井化学株式会社 非晶質太陽電池
JPH05275343A (ja) * 1992-03-27 1993-10-22 Toshiba Corp 基板処理装置
JP3297857B2 (ja) * 1995-12-27 2002-07-02 東京エレクトロン株式会社 クラスタツール装置
US6015759A (en) * 1997-12-08 2000-01-18 Quester Technology, Inc. Surface modification of semiconductors using electromagnetic radiation
US6081334A (en) * 1998-04-17 2000-06-27 Applied Materials, Inc Endpoint detection for semiconductor processes
JP2002270596A (ja) * 2001-03-12 2002-09-20 Matsushita Electric Ind Co Ltd 半導体装置の製造装置
JP2003115578A (ja) * 2001-10-05 2003-04-18 Canon Inc 不揮発固体磁気メモリ装置、該不揮発固体磁気メモリ装置の製造方法およびマルチ・チップ・パッケージ
US7431795B2 (en) * 2004-07-29 2008-10-07 Applied Materials, Inc. Cluster tool and method for process integration in manufacture of a gate structure of a field effect transistor

Similar Documents

Publication Publication Date Title
JP2009543355A5 (enExample)
US9844802B2 (en) Process and apparatus for cleaning imprinting molds, and process for manufacturing imprinting molds
JP5880442B2 (ja) ガスバリア性フィルム、ガスバリア性フィルムの製造方法及び電子デバイス
JP5693941B2 (ja) テンプレートの表面処理方法及び装置並びにパターン形成方法
JP2008260273A5 (enExample)
US20150357188A1 (en) Film forming method, computer storage medium, and film forming system
TWI597379B (zh) 類鑽碳與氮氧化矽薄膜之結晶與漂白
JP2010534935A5 (enExample)
JP2013510332A5 (enExample)
TW200629416A (en) Semiconductor device and fabrication method thereof
JP2010016356A5 (enExample)
JP2011151114A5 (enExample)
JP2008235660A5 (enExample)
JP2015529011A5 (enExample)
JP2014138063A5 (enExample)
JP2012124263A5 (enExample)
JP2015537372A5 (enExample)
JP2012009844A5 (enExample)
TW201428846A (zh) 清潔基板用之處理氣體產生
JP7546945B2 (ja) 有機薄膜を形成するための組成物および技術
JP2009016446A5 (enExample)
JP2008109071A5 (enExample)
JP2009282517A5 (enExample)
JP2004216321A5 (enExample)
JP2012015344A5 (ja) 半導体装置の製造方法、基板処理方法及び基板処理装置