JP2015537372A5 - - Google Patents

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Publication number
JP2015537372A5
JP2015537372A5 JP2015535666A JP2015535666A JP2015537372A5 JP 2015537372 A5 JP2015537372 A5 JP 2015537372A5 JP 2015535666 A JP2015535666 A JP 2015535666A JP 2015535666 A JP2015535666 A JP 2015535666A JP 2015537372 A5 JP2015537372 A5 JP 2015537372A5
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JP
Japan
Prior art keywords
pretreatment
substrate
cleaning
gas
period
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Application number
JP2015535666A
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English (en)
Japanese (ja)
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JP2015537372A (ja
JP6093446B2 (ja
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Priority claimed from US13/783,382 external-priority patent/US9966280B2/en
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Publication of JP2015537372A publication Critical patent/JP2015537372A/ja
Publication of JP2015537372A5 publication Critical patent/JP2015537372A5/ja
Application granted granted Critical
Publication of JP6093446B2 publication Critical patent/JP6093446B2/ja
Active legal-status Critical Current
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JP2015535666A 2012-10-05 2013-09-13 基板を清浄化するためのプロセスガスの生成 Active JP6093446B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261710657P 2012-10-05 2012-10-05
US61/710,657 2012-10-05
US13/783,382 2013-03-03
US13/783,382 US9966280B2 (en) 2012-10-05 2013-03-03 Process gas generation for cleaning of substrates
PCT/US2013/059601 WO2014055218A1 (en) 2012-10-05 2013-09-13 Process gas generation for cleaning of substrates

Publications (3)

Publication Number Publication Date
JP2015537372A JP2015537372A (ja) 2015-12-24
JP2015537372A5 true JP2015537372A5 (enExample) 2016-12-22
JP6093446B2 JP6093446B2 (ja) 2017-03-08

Family

ID=50431767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015535666A Active JP6093446B2 (ja) 2012-10-05 2013-09-13 基板を清浄化するためのプロセスガスの生成

Country Status (6)

Country Link
US (1) US9966280B2 (enExample)
JP (1) JP6093446B2 (enExample)
KR (1) KR101774122B1 (enExample)
CN (2) CN110071035A (enExample)
TW (1) TWI647756B (enExample)
WO (1) WO2014055218A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10249509B2 (en) 2012-11-09 2019-04-02 Tokyo Electron Limited Substrate cleaning method and system using atmospheric pressure atomic oxygen
JP6832108B2 (ja) * 2016-09-28 2021-02-24 株式会社Screenホールディングス 基板処理方法
JP6770887B2 (ja) * 2016-12-28 2020-10-21 株式会社Screenホールディングス 基板処理装置および基板処理システム
CN109092801B (zh) * 2017-06-20 2022-03-18 蓝思科技(长沙)有限公司 一种蓝宝石晶片的清洗方法及其采用的设备
US11027319B2 (en) * 2018-03-31 2021-06-08 Sensor Electronic Technology, Inc. Illumination using multiple light sources
JP7525338B2 (ja) 2020-08-31 2024-07-30 株式会社Screenホールディングス 基板処理方法および基板処理装置
JP7567960B2 (ja) * 2023-03-14 2024-10-16 株式会社明電舎 基板の洗浄装置,基板の洗浄方法,半導体装置の製造方法
US20260003291A1 (en) * 2024-06-28 2026-01-01 Kla Corporation Duv led array for an ultraviolet-ozone cleaning system

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05109674A (ja) 1991-10-18 1993-04-30 Ushio Inc レジスト膜の灰化方法と灰化装置
JP2727481B2 (ja) * 1992-02-07 1998-03-11 キヤノン株式会社 液晶素子用ガラス基板の洗浄方法
US6391117B2 (en) * 1992-02-07 2002-05-21 Canon Kabushiki Kaisha Method of washing substrate with UV radiation and ultrasonic cleaning
US5709754A (en) 1995-12-29 1998-01-20 Micron Technology, Inc. Method and apparatus for removing photoresist using UV and ozone/oxygen mixture
US5803975A (en) * 1996-03-01 1998-09-08 Canon Kabushiki Kaisha Microwave plasma processing apparatus and method therefor
JP3167625B2 (ja) * 1996-07-29 2001-05-21 島田理化工業株式会社 基板のウェット洗浄方法
JPH1048586A (ja) * 1996-08-02 1998-02-20 Sharp Corp 表示素子用基板およびその製造方法並びにその製造装置
JPH11323576A (ja) 1998-05-08 1999-11-26 Sumitomo Precision Prod Co Ltd ウエットエッチング方法
JP4088810B2 (ja) 1998-09-01 2008-05-21 リアライズ・アドバンストテクノロジ株式会社 基板洗浄装置及び基板洗浄方法
US6143477A (en) * 1998-09-08 2000-11-07 Amtech Systems, Inc. Dual wavelength UV lamp reactor and method for cleaning/ashing semiconductor wafers
US6503464B1 (en) 1999-08-12 2003-01-07 Sipec Corporation Ultraviolet processing apparatus and ultraviolet processing method
US6503693B1 (en) 1999-12-02 2003-01-07 Axcelis Technologies, Inc. UV assisted chemical modification of photoresist
US6524936B2 (en) 2000-12-22 2003-02-25 Axcelis Technologies, Inc. Process for removal of photoresist after post ion implantation
US6848455B1 (en) * 2002-04-22 2005-02-01 Novellus Systems, Inc. Method and apparatus for removing photoresist and post-etch residue from semiconductor substrates by in-situ generation of oxidizing species
AU2003245677A1 (en) 2002-06-23 2004-01-06 Aviza Technology, Inc. Method and system for atomic layer removal and atomic layer exchange
US6715498B1 (en) * 2002-09-06 2004-04-06 Novellus Systems, Inc. Method and apparatus for radiation enhanced supercritical fluid processing
JP2005129733A (ja) 2003-10-23 2005-05-19 Sumitomo Precision Prod Co Ltd 表面改質方法及び表面改質装置
US20050279453A1 (en) * 2004-06-17 2005-12-22 Uvtech Systems, Inc. System and methods for surface cleaning
US7837821B2 (en) 2004-10-13 2010-11-23 Rheonix, Inc. Laminated microfluidic structures and method for making
US7335980B2 (en) 2004-11-04 2008-02-26 International Business Machines Corporation Hardmask for reliability of silicon based dielectrics
US7642205B2 (en) * 2005-04-08 2010-01-05 Mattson Technology, Inc. Rapid thermal processing using energy transfer layers
US8795769B2 (en) * 2005-08-02 2014-08-05 New Way Machine Components, Inc. Method and a device for depositing a film of material or otherwise processing or inspecting, a substrate as it passes through a vacuum environment guided by a plurality of opposing and balanced air bearing lands and sealed by differentially pumped groves and sealing lands in a non-contact manner
US7527695B2 (en) * 2006-06-21 2009-05-05 Asahi Glass Company, Limited Apparatus and method for cleaning substrate
US8168548B2 (en) * 2006-09-29 2012-05-01 Tokyo Electron Limited UV-assisted dielectric formation for devices with strained germanium-containing layers
TW200832495A (en) 2007-01-19 2008-08-01 Kismart Corp Light module
US20080268214A1 (en) * 2007-04-30 2008-10-30 Richard Allen Hayes Decorative safety glass
JP5224167B2 (ja) 2007-10-23 2013-07-03 株式会社湯山製作所 薬剤払出装置、並びに、薬剤払出システム
JP4640421B2 (ja) * 2008-02-29 2011-03-02 凸版印刷株式会社 紫外線照射装置
US20090293907A1 (en) * 2008-05-28 2009-12-03 Nancy Fung Method of substrate polymer removal
EP2166564B1 (en) * 2008-09-19 2017-04-12 Imec Method for removing a hardened photoresist from a semiconductor substrate
US8492736B2 (en) * 2010-06-09 2013-07-23 Lam Research Corporation Ozone plenum as UV shutter or tunable UV filter for cleaning semiconductor substrates
US8772170B2 (en) 2010-09-01 2014-07-08 Arizona Board Of Regents On Behalf Of The University Of Arizona Enhanced stripping of implanted resists
US8501630B2 (en) 2010-09-28 2013-08-06 Tokyo Electron Limited Selective etch process for silicon nitride
JP5481366B2 (ja) 2010-12-22 2014-04-23 東京エレクトロン株式会社 液処理方法および液処理装置
US20130330920A1 (en) * 2012-06-06 2013-12-12 Applied Materials, Inc. Method and apparatus for substrate preclean with hydrogen containing high frequency rf plasma

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