CN110071035A - 用于在清洗系统中清洗基板的方法 - Google Patents

用于在清洗系统中清洗基板的方法 Download PDF

Info

Publication number
CN110071035A
CN110071035A CN201910122153.6A CN201910122153A CN110071035A CN 110071035 A CN110071035 A CN 110071035A CN 201910122153 A CN201910122153 A CN 201910122153A CN 110071035 A CN110071035 A CN 110071035A
Authority
CN
China
Prior art keywords
pretreatment
cleaning
substrate
method described
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910122153.6A
Other languages
English (en)
Chinese (zh)
Inventor
伊安·J·布朗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN110071035A publication Critical patent/CN110071035A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
CN201910122153.6A 2012-10-05 2013-09-13 用于在清洗系统中清洗基板的方法 Pending CN110071035A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261710657P 2012-10-05 2012-10-05
US61/710,657 2012-10-05
US13/783,382 US9966280B2 (en) 2012-10-05 2013-03-03 Process gas generation for cleaning of substrates
US13/783,382 2013-03-03
CN201380063928.8A CN104903014A (zh) 2012-10-05 2013-09-13 用于清洗基板的工艺气体的产生

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201380063928.8A Division CN104903014A (zh) 2012-10-05 2013-09-13 用于清洗基板的工艺气体的产生

Publications (1)

Publication Number Publication Date
CN110071035A true CN110071035A (zh) 2019-07-30

Family

ID=50431767

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201910122153.6A Pending CN110071035A (zh) 2012-10-05 2013-09-13 用于在清洗系统中清洗基板的方法
CN201380063928.8A Pending CN104903014A (zh) 2012-10-05 2013-09-13 用于清洗基板的工艺气体的产生

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201380063928.8A Pending CN104903014A (zh) 2012-10-05 2013-09-13 用于清洗基板的工艺气体的产生

Country Status (6)

Country Link
US (1) US9966280B2 (enExample)
JP (1) JP6093446B2 (enExample)
KR (1) KR101774122B1 (enExample)
CN (2) CN110071035A (enExample)
TW (1) TWI647756B (enExample)
WO (1) WO2014055218A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114121643A (zh) * 2020-08-31 2022-03-01 株式会社斯库林集团 衬底处理方法及衬底处理装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10249509B2 (en) 2012-11-09 2019-04-02 Tokyo Electron Limited Substrate cleaning method and system using atmospheric pressure atomic oxygen
JP6832108B2 (ja) * 2016-09-28 2021-02-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
JP6770887B2 (ja) * 2016-12-28 2020-10-21 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理システム
CN109092801B (zh) * 2017-06-20 2022-03-18 蓝思科技（长沙）有限公司 一种蓝宝石晶片的清洗方法及其采用的设备
US11027319B2 (en) * 2018-03-31 2021-06-08 Sensor Electronic Technology, Inc. Illumination using multiple light sources

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010017142A1 (en) * 1992-02-07 2001-08-30 Masaaki Suzuki Method of washing substrate with UV radiation and ultrasonic cleaning
US6715498B1 (en) * 2002-09-06 2004-04-06 Novellus Systems, Inc. Method and apparatus for radiation enhanced supercritical fluid processing
US6848455B1 (en) * 2002-04-22 2005-02-01 Novellus Systems, Inc. Method and apparatus for removing photoresist and post-etch residue from semiconductor substrates by in-situ generation of oxidizing species
TW200909080A (en) * 2006-06-21 2009-03-01 Asahi Glass Co Ltd Apparatus and method for cleaning substrate
US20100071718A1 (en) * 2008-09-19 2010-03-25 Imec Method for Removing a Hardened Photoresist

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05109674A (ja) 1991-10-18 1993-04-30 Ushio Inc レジスト膜の灰化方法と灰化装置
JP2727481B2 (ja) * 1992-02-07 1998-03-11 キヤノン株式会社 液晶素子用ガラス基板の洗浄方法
US5709754A (en) 1995-12-29 1998-01-20 Micron Technology, Inc. Method and apparatus for removing photoresist using UV and ozone/oxygen mixture
US5803975A (en) * 1996-03-01 1998-09-08 Canon Kabushiki Kaisha Microwave plasma processing apparatus and method therefor
JP3167625B2 (ja) * 1996-07-29 2001-05-21 島田理化工業株式会社 基板のウェット洗浄方法
JPH1048586A (ja) * 1996-08-02 1998-02-20 Sharp Corp 表示素子用基板およびその製造方法並びにその製造装置
JPH11323576A (ja) 1998-05-08 1999-11-26 Sumitomo Precision Prod Co Ltd ウエットエッチング方法
JP4088810B2 (ja) 1998-09-01 2008-05-21 リアライズ・アドバンストテクノロジ株式会社 基板洗浄装置及び基板洗浄方法
US6143477A (en) * 1998-09-08 2000-11-07 Amtech Systems, Inc. Dual wavelength UV lamp reactor and method for cleaning/ashing semiconductor wafers
JP2001118818A (ja) 1999-08-12 2001-04-27 Uct Kk 紫外線処理装置及び紫外線処理方法
US6503693B1 (en) 1999-12-02 2003-01-07 Axcelis Technologies, Inc. UV assisted chemical modification of photoresist
US6524936B2 (en) 2000-12-22 2003-02-25 Axcelis Technologies, Inc. Process for removal of photoresist after post ion implantation
TWI291721B (en) 2002-06-23 2007-12-21 Asml Us Inc Method and system for atomic layer removal and atomic layer exchange
JP2005129733A (ja) 2003-10-23 2005-05-19 Sumitomo Precision Prod Co Ltd 表面改質方法及び表面改質装置
US20050279453A1 (en) * 2004-06-17 2005-12-22 Uvtech Systems, Inc. System and methods for surface cleaning
US7837821B2 (en) 2004-10-13 2010-11-23 Rheonix, Inc. Laminated microfluidic structures and method for making
US7335980B2 (en) 2004-11-04 2008-02-26 International Business Machines Corporation Hardmask for reliability of silicon based dielectrics
US7642205B2 (en) * 2005-04-08 2010-01-05 Mattson Technology, Inc. Rapid thermal processing using energy transfer layers
US8795769B2 (en) * 2005-08-02 2014-08-05 New Way Machine Components, Inc. Method and a device for depositing a film of material or otherwise processing or inspecting, a substrate as it passes through a vacuum environment guided by a plurality of opposing and balanced air bearing lands and sealed by differentially pumped groves and sealing lands in a non-contact manner
US8168548B2 (en) * 2006-09-29 2012-05-01 Tokyo Electron Limited UV-assisted dielectric formation for devices with strained germanium-containing layers
TWM329794U (en) 2007-01-19 2008-04-01 Kismart Corp Backlight module
US20080268214A1 (en) * 2007-04-30 2008-10-30 Richard Allen Hayes Decorative safety glass
JP5224167B2 (ja) 2007-10-23 2013-07-03 株式会社湯山製作所 薬剤払出装置、並びに、薬剤払出システム
JP4640421B2 (ja) * 2008-02-29 2011-03-02 凸版印刷株式会社 紫外線照射装置
US20090293907A1 (en) * 2008-05-28 2009-12-03 Nancy Fung Method of substrate polymer removal
US8492736B2 (en) * 2010-06-09 2013-07-23 Lam Research Corporation Ozone plenum as UV shutter or tunable UV filter for cleaning semiconductor substrates
US8772170B2 (en) 2010-09-01 2014-07-08 Arizona Board Of Regents On Behalf Of The University Of Arizona Enhanced stripping of implanted resists
US8501630B2 (en) 2010-09-28 2013-08-06 Tokyo Electron Limited Selective etch process for silicon nitride
JP5481366B2 (ja) 2010-12-22 2014-04-23 東京エレクトロン株式会社 液処理方法および液処理装置
US20130330920A1 (en) * 2012-06-06 2013-12-12 Applied Materials, Inc. Method and apparatus for substrate preclean with hydrogen containing high frequency rf plasma

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010017142A1 (en) * 1992-02-07 2001-08-30 Masaaki Suzuki Method of washing substrate with UV radiation and ultrasonic cleaning
US6848455B1 (en) * 2002-04-22 2005-02-01 Novellus Systems, Inc. Method and apparatus for removing photoresist and post-etch residue from semiconductor substrates by in-situ generation of oxidizing species
US6715498B1 (en) * 2002-09-06 2004-04-06 Novellus Systems, Inc. Method and apparatus for radiation enhanced supercritical fluid processing
TW200909080A (en) * 2006-06-21 2009-03-01 Asahi Glass Co Ltd Apparatus and method for cleaning substrate
US20100071718A1 (en) * 2008-09-19 2010-03-25 Imec Method for Removing a Hardened Photoresist

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114121643A (zh) * 2020-08-31 2022-03-01 株式会社斯库林集团 衬底处理方法及衬底处理装置
TWI818297B (zh) * 2020-08-31 2023-10-11 日商斯庫林集團股份有限公司 基板處理方法及基板處理裝置
US11915930B2 (en) 2020-08-31 2024-02-27 SCREEN Holdings Co., Ltd. Substrate processing method and substrate processing apparatus

Also Published As

Publication number Publication date
JP6093446B2 (ja) 2017-03-08
JP2015537372A (ja) 2015-12-24
TWI647756B (zh) 2019-01-11
KR20150079680A (ko) 2015-07-08
US20140096792A1 (en) 2014-04-10
TW201428846A (zh) 2014-07-16
KR101774122B1 (ko) 2017-09-12
CN104903014A (zh) 2015-09-09
WO2014055218A1 (en) 2014-04-10
US9966280B2 (en) 2018-05-08

Similar Documents

Publication Publication Date Title
CN110071035A (zh) 用于在清洗系统中清洗基板的方法
TWI526257B (zh) 使用噴嘴清洗基板上之一層的控制
KR101010419B1 (ko) 열 프로세스에 의한 식각된 챔버로부터 할로겐 잔류물들을 제거하기 위한 통합 방법
TWI667708B (zh) 蝕刻後聚合物及硬遮罩移除之加強型移除用方法及硬體
TW202117468A (zh) 利用鹵化物化學品的光阻顯影
CN115362414A (zh) 用于增强euv光刻性能的暴露前光致抗蚀剂固化
US20020151156A1 (en) Process for removal of photoresist after post ion implantation
CN118020031A (zh) 含金属光致抗蚀剂的再加工
TWI686866B (zh) 用以提升光阻剝除性能及改質有機膜的過氧化物蒸氣處理
US10510527B2 (en) Single wafer cleaning tool with H2SO4 recycling
JP2013506313A (ja) 基板上のシリコン含有反射防止コーティング層の再加工方法
JP6738414B2 (ja) 紫外線に暴露された水性液体媒体で基板を処理する方法
US20150136183A1 (en) System of controlling treatment liquid dispense for spinning substrates
JP2023074494A (ja) Ｅｕｖレジストのｕｖ処理
KR100505693B1 (ko) 미세 전자 소자 기판으로부터 포토레지스트 또는 유기물을세정하는 방법
US10249509B2 (en) Substrate cleaning method and system using atmospheric pressure atomic oxygen
TW202314365A (zh) 用以改善含金屬光阻的乾式顯影效能之多步驟曝光後處理
JP2015537372A5 (enExample)
WO2014011657A2 (en) Method of stripping photoresist on a single substrate system
JP2002231696A (ja) レジスト除去方法とその装置
WO2020207824A1 (en) Composition comprising an ammonia-activated siloxane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below
WO2024123632A2 (en) Endpoint detection and tracking of photoresist processes
JP2004134810A (ja) 基板処理方法及び基板処理装置
De Gendt et al. Evaluation of ozonated water spray for resist cleaning applications
TW201643401A (zh) 基板處理系統中粒子性能之量化系統及方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20190730