TWI647756B - 清潔基板用之處理氣體產生 - Google Patents
清潔基板用之處理氣體產生 Download PDFInfo
- Publication number
- TWI647756B TWI647756B TW102135907A TW102135907A TWI647756B TW I647756 B TWI647756 B TW I647756B TW 102135907 A TW102135907 A TW 102135907A TW 102135907 A TW102135907 A TW 102135907A TW I647756 B TWI647756 B TW I647756B
- Authority
- TW
- Taiwan
- Prior art keywords
- cleaning
- pretreatment
- substrate
- item
- cleaning system
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
- B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H10P72/0406—
-
- H10P72/0414—
-
- H10P72/0604—
-
- H10P74/23—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H10P70/23—
-
- H10P74/203—
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261710657P | 2012-10-05 | 2012-10-05 | |
| US61/710,657 | 2012-10-05 | ||
| US13/783,382 | 2013-03-03 | ||
| US13/783,382 US9966280B2 (en) | 2012-10-05 | 2013-03-03 | Process gas generation for cleaning of substrates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201428846A TW201428846A (zh) | 2014-07-16 |
| TWI647756B true TWI647756B (zh) | 2019-01-11 |
Family
ID=50431767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102135907A TWI647756B (zh) | 2012-10-05 | 2013-10-04 | 清潔基板用之處理氣體產生 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9966280B2 (enExample) |
| JP (1) | JP6093446B2 (enExample) |
| KR (1) | KR101774122B1 (enExample) |
| CN (2) | CN110071035A (enExample) |
| TW (1) | TWI647756B (enExample) |
| WO (1) | WO2014055218A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10249509B2 (en) | 2012-11-09 | 2019-04-02 | Tokyo Electron Limited | Substrate cleaning method and system using atmospheric pressure atomic oxygen |
| JP6832108B2 (ja) * | 2016-09-28 | 2021-02-24 | 株式会社Screenホールディングス | 基板処理方法 |
| JP6770887B2 (ja) * | 2016-12-28 | 2020-10-21 | 株式会社Screenホールディングス | 基板処理装置および基板処理システム |
| CN109092801B (zh) * | 2017-06-20 | 2022-03-18 | 蓝思科技(长沙)有限公司 | 一种蓝宝石晶片的清洗方法及其采用的设备 |
| US11027319B2 (en) * | 2018-03-31 | 2021-06-08 | Sensor Electronic Technology, Inc. | Illumination using multiple light sources |
| JP7525338B2 (ja) | 2020-08-31 | 2024-07-30 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
| JP7567960B2 (ja) * | 2023-03-14 | 2024-10-16 | 株式会社明電舎 | 基板の洗浄装置,基板の洗浄方法,半導体装置の製造方法 |
| US20260003291A1 (en) * | 2024-06-28 | 2026-01-01 | Kla Corporation | Duv led array for an ultraviolet-ozone cleaning system |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010017142A1 (en) * | 1992-02-07 | 2001-08-30 | Masaaki Suzuki | Method of washing substrate with UV radiation and ultrasonic cleaning |
| US6715498B1 (en) * | 2002-09-06 | 2004-04-06 | Novellus Systems, Inc. | Method and apparatus for radiation enhanced supercritical fluid processing |
| US20050279380A1 (en) * | 2004-06-17 | 2005-12-22 | Uvtech Systems, Inc. | Method for surface cleaning |
| CN1783479A (zh) * | 2004-11-04 | 2006-06-07 | 国际商业机器公司 | 互连结构及其形成方法 |
| TW200832495A (en) * | 2007-01-19 | 2008-08-01 | Kismart Corp | Light module |
| US20080268214A1 (en) * | 2007-04-30 | 2008-10-30 | Richard Allen Hayes | Decorative safety glass |
| US20100282271A1 (en) * | 2005-08-02 | 2010-11-11 | New Way Machine Components, Inc. | Method and apparatus for in-line processing and immediately sequential or simultaneous processing of flat and flexible substrates through viscous shear in thin cross section gaps for the manufacture of micro-electronic circuits or displays |
| US20110306213A1 (en) * | 2010-06-09 | 2011-12-15 | Lam Research Corporation | Ozone plenum as uv shutter or tunable uv filter for cleaning semiconductor substrates |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05109674A (ja) | 1991-10-18 | 1993-04-30 | Ushio Inc | レジスト膜の灰化方法と灰化装置 |
| JP2727481B2 (ja) * | 1992-02-07 | 1998-03-11 | キヤノン株式会社 | 液晶素子用ガラス基板の洗浄方法 |
| US5709754A (en) | 1995-12-29 | 1998-01-20 | Micron Technology, Inc. | Method and apparatus for removing photoresist using UV and ozone/oxygen mixture |
| US5803975A (en) * | 1996-03-01 | 1998-09-08 | Canon Kabushiki Kaisha | Microwave plasma processing apparatus and method therefor |
| JP3167625B2 (ja) * | 1996-07-29 | 2001-05-21 | 島田理化工業株式会社 | 基板のウェット洗浄方法 |
| JPH1048586A (ja) * | 1996-08-02 | 1998-02-20 | Sharp Corp | 表示素子用基板およびその製造方法並びにその製造装置 |
| JPH11323576A (ja) | 1998-05-08 | 1999-11-26 | Sumitomo Precision Prod Co Ltd | ウエットエッチング方法 |
| JP4088810B2 (ja) | 1998-09-01 | 2008-05-21 | リアライズ・アドバンストテクノロジ株式会社 | 基板洗浄装置及び基板洗浄方法 |
| US6143477A (en) * | 1998-09-08 | 2000-11-07 | Amtech Systems, Inc. | Dual wavelength UV lamp reactor and method for cleaning/ashing semiconductor wafers |
| US6503464B1 (en) | 1999-08-12 | 2003-01-07 | Sipec Corporation | Ultraviolet processing apparatus and ultraviolet processing method |
| US6503693B1 (en) | 1999-12-02 | 2003-01-07 | Axcelis Technologies, Inc. | UV assisted chemical modification of photoresist |
| US6524936B2 (en) | 2000-12-22 | 2003-02-25 | Axcelis Technologies, Inc. | Process for removal of photoresist after post ion implantation |
| US6848455B1 (en) * | 2002-04-22 | 2005-02-01 | Novellus Systems, Inc. | Method and apparatus for removing photoresist and post-etch residue from semiconductor substrates by in-situ generation of oxidizing species |
| AU2003245677A1 (en) | 2002-06-23 | 2004-01-06 | Aviza Technology, Inc. | Method and system for atomic layer removal and atomic layer exchange |
| JP2005129733A (ja) | 2003-10-23 | 2005-05-19 | Sumitomo Precision Prod Co Ltd | 表面改質方法及び表面改質装置 |
| US7837821B2 (en) | 2004-10-13 | 2010-11-23 | Rheonix, Inc. | Laminated microfluidic structures and method for making |
| US7642205B2 (en) * | 2005-04-08 | 2010-01-05 | Mattson Technology, Inc. | Rapid thermal processing using energy transfer layers |
| US7527695B2 (en) * | 2006-06-21 | 2009-05-05 | Asahi Glass Company, Limited | Apparatus and method for cleaning substrate |
| US8168548B2 (en) * | 2006-09-29 | 2012-05-01 | Tokyo Electron Limited | UV-assisted dielectric formation for devices with strained germanium-containing layers |
| JP5224167B2 (ja) | 2007-10-23 | 2013-07-03 | 株式会社湯山製作所 | 薬剤払出装置、並びに、薬剤払出システム |
| JP4640421B2 (ja) * | 2008-02-29 | 2011-03-02 | 凸版印刷株式会社 | 紫外線照射装置 |
| US20090293907A1 (en) * | 2008-05-28 | 2009-12-03 | Nancy Fung | Method of substrate polymer removal |
| EP2166564B1 (en) * | 2008-09-19 | 2017-04-12 | Imec | Method for removing a hardened photoresist from a semiconductor substrate |
| US8772170B2 (en) | 2010-09-01 | 2014-07-08 | Arizona Board Of Regents On Behalf Of The University Of Arizona | Enhanced stripping of implanted resists |
| US8501630B2 (en) | 2010-09-28 | 2013-08-06 | Tokyo Electron Limited | Selective etch process for silicon nitride |
| JP5481366B2 (ja) | 2010-12-22 | 2014-04-23 | 東京エレクトロン株式会社 | 液処理方法および液処理装置 |
| US20130330920A1 (en) * | 2012-06-06 | 2013-12-12 | Applied Materials, Inc. | Method and apparatus for substrate preclean with hydrogen containing high frequency rf plasma |
-
2013
- 2013-03-03 US US13/783,382 patent/US9966280B2/en active Active
- 2013-09-13 JP JP2015535666A patent/JP6093446B2/ja active Active
- 2013-09-13 CN CN201910122153.6A patent/CN110071035A/zh active Pending
- 2013-09-13 WO PCT/US2013/059601 patent/WO2014055218A1/en not_active Ceased
- 2013-09-13 KR KR1020157011733A patent/KR101774122B1/ko active Active
- 2013-09-13 CN CN201380063928.8A patent/CN104903014A/zh active Pending
- 2013-10-04 TW TW102135907A patent/TWI647756B/zh active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010017142A1 (en) * | 1992-02-07 | 2001-08-30 | Masaaki Suzuki | Method of washing substrate with UV radiation and ultrasonic cleaning |
| US6715498B1 (en) * | 2002-09-06 | 2004-04-06 | Novellus Systems, Inc. | Method and apparatus for radiation enhanced supercritical fluid processing |
| US20050279380A1 (en) * | 2004-06-17 | 2005-12-22 | Uvtech Systems, Inc. | Method for surface cleaning |
| CN1783479A (zh) * | 2004-11-04 | 2006-06-07 | 国际商业机器公司 | 互连结构及其形成方法 |
| US20100282271A1 (en) * | 2005-08-02 | 2010-11-11 | New Way Machine Components, Inc. | Method and apparatus for in-line processing and immediately sequential or simultaneous processing of flat and flexible substrates through viscous shear in thin cross section gaps for the manufacture of micro-electronic circuits or displays |
| TW200832495A (en) * | 2007-01-19 | 2008-08-01 | Kismart Corp | Light module |
| US20080268214A1 (en) * | 2007-04-30 | 2008-10-30 | Richard Allen Hayes | Decorative safety glass |
| US20110306213A1 (en) * | 2010-06-09 | 2011-12-15 | Lam Research Corporation | Ozone plenum as uv shutter or tunable uv filter for cleaning semiconductor substrates |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201428846A (zh) | 2014-07-16 |
| WO2014055218A1 (en) | 2014-04-10 |
| JP2015537372A (ja) | 2015-12-24 |
| KR20150079680A (ko) | 2015-07-08 |
| JP6093446B2 (ja) | 2017-03-08 |
| US9966280B2 (en) | 2018-05-08 |
| US20140096792A1 (en) | 2014-04-10 |
| KR101774122B1 (ko) | 2017-09-12 |
| CN104903014A (zh) | 2015-09-09 |
| CN110071035A (zh) | 2019-07-30 |
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