JP2015529011A5 - - Google Patents
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- Publication number
- JP2015529011A5 JP2015529011A5 JP2015521627A JP2015521627A JP2015529011A5 JP 2015529011 A5 JP2015529011 A5 JP 2015529011A5 JP 2015521627 A JP2015521627 A JP 2015521627A JP 2015521627 A JP2015521627 A JP 2015521627A JP 2015529011 A5 JP2015529011 A5 JP 2015529011A5
- Authority
- JP
- Japan
- Prior art keywords
- dielectric constant
- dielectric film
- low dielectric
- constant silicon
- exposing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 28
- 229910052710 silicon Inorganic materials 0.000 claims 28
- 239000010703 silicon Substances 0.000 claims 28
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 12
- 239000003795 chemical substances by application Substances 0.000 claims 9
- 238000003848 UV Light-Curing Methods 0.000 claims 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 230000004888 barrier function Effects 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000013036 cure process Methods 0.000 claims 1
- 238000001723 curing Methods 0.000 claims 1
- 238000005137 deposition process Methods 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 230000010354 integration Effects 0.000 claims 1
- 238000001465 metallisation Methods 0.000 claims 1
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims 1
- 238000009834 vaporization Methods 0.000 claims 1
- 230000008016 vaporization Effects 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261671191P | 2012-07-13 | 2012-07-13 | |
| US61/671,191 | 2012-07-13 | ||
| PCT/US2013/046285 WO2014011364A1 (en) | 2012-07-13 | 2013-06-18 | Method to reduce dielectric constant of a porous low-k film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015529011A JP2015529011A (ja) | 2015-10-01 |
| JP2015529011A5 true JP2015529011A5 (enExample) | 2016-08-04 |
Family
ID=49914335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015521627A Pending JP2015529011A (ja) | 2012-07-13 | 2013-06-18 | 多孔性低誘電率膜の誘電率を低減させる方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8993444B2 (enExample) |
| JP (1) | JP2015529011A (enExample) |
| KR (1) | KR102109482B1 (enExample) |
| CN (1) | CN104471687A (enExample) |
| TW (1) | TWI581331B (enExample) |
| WO (1) | WO2014011364A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5905476B2 (ja) * | 2010-10-19 | 2016-04-20 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Ｎａｎｏｃｕｒｅｕｖチャンバ用の石英シャワーヘッド |
| US9318364B2 (en) * | 2014-01-13 | 2016-04-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device metallization systems and methods |
| US9362107B2 (en) * | 2014-09-30 | 2016-06-07 | Applied Materials, Inc. | Flowable low-k dielectric gapfill treatment |
| TWI752221B (zh) * | 2017-04-27 | 2022-01-11 | 日商東京威力科創股份有限公司 | 使用有機矽酸鹽做為圖案化膜之方法及系統 |
| US11469100B2 (en) | 2019-05-30 | 2022-10-11 | Applied Materials, Inc. | Methods of post treating dielectric films with microwave radiation |
| WO2021216260A1 (en) | 2020-04-20 | 2021-10-28 | Applied Materials, Inc. | Multi-thermal cvd chambers with shared gas delivery and exhaust system |
| US12410523B1 (en) * | 2024-03-29 | 2025-09-09 | Applied Materials, Inc. | Integrated low k recovery and ALD metal deposition process for advanced technology node |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000340651A (ja) * | 1999-05-28 | 2000-12-08 | Hitachi Chem Co Ltd | 低誘電率膜の製造法 |
| US6475930B1 (en) * | 2000-01-31 | 2002-11-05 | Motorola, Inc. | UV cure process and tool for low k film formation |
| EP1172847A3 (en) * | 2000-07-10 | 2004-07-28 | Interuniversitair Micro-Elektronica Centrum Vzw | A method to produce a porous oxygen-silicon layer |
| US6348407B1 (en) * | 2001-03-15 | 2002-02-19 | Chartered Semiconductor Manufacturing Inc. | Method to improve adhesion of organic dielectrics in dual damascene interconnects |
| US7541200B1 (en) * | 2002-01-24 | 2009-06-02 | Novellus Systems, Inc. | Treatment of low k films with a silylating agent for damage repair |
| US7709371B2 (en) * | 2003-01-25 | 2010-05-04 | Honeywell International Inc. | Repairing damage to low-k dielectric materials using silylating agents |
| US7049247B2 (en) * | 2004-05-03 | 2006-05-23 | International Business Machines Corporation | Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made |
| JP5057647B2 (ja) * | 2004-07-02 | 2012-10-24 | 東京エレクトロン株式会社 | 半導体装置の製造方法および半導体装置の製造装置 |
| EP1632956A1 (en) * | 2004-09-07 | 2006-03-08 | Rohm and Haas Electronic Materials, L.L.C. | Compositions comprising an organic polysilica and an arylgroup-capped polyol, and methods for preparing porous organic polysilica films |
| US7678682B2 (en) * | 2004-11-12 | 2010-03-16 | Axcelis Technologies, Inc. | Ultraviolet assisted pore sealing of porous low k dielectric films |
| CN1787186A (zh) * | 2004-12-09 | 2006-06-14 | 富士通株式会社 | 半导体器件制造方法 |
| US20060251827A1 (en) | 2005-05-09 | 2006-11-09 | Applied Materials, Inc. | Tandem uv chamber for curing dielectric materials |
| US7482281B2 (en) * | 2005-09-29 | 2009-01-27 | Tokyo Electron Limited | Substrate processing method |
| US8465991B2 (en) * | 2006-10-30 | 2013-06-18 | Novellus Systems, Inc. | Carbon containing low-k dielectric constant recovery using UV treatment |
| US7500397B2 (en) | 2007-02-15 | 2009-03-10 | Air Products And Chemicals, Inc. | Activated chemical process for enhancing material properties of dielectric films |
| US20090061633A1 (en) | 2007-08-31 | 2009-03-05 | Fujitsu Limited | Method of manufacturing semiconductor device |
| JP5304033B2 (ja) * | 2007-08-31 | 2013-10-02 | 富士通株式会社 | 半導体装置の製造方法 |
| US20100065758A1 (en) | 2008-09-16 | 2010-03-18 | Tokyo Electron Limited | Dielectric material treatment system and method of operating |
| US20100087062A1 (en) | 2008-10-06 | 2010-04-08 | Applied Materials, Inc. | High temperature bd development for memory applications |
| JP2010287655A (ja) * | 2009-06-10 | 2010-12-24 | Toshiba Corp | 半導体装置の製造方法 |
| US8242460B2 (en) * | 2010-03-29 | 2012-08-14 | Tokyo Electron Limited | Ultraviolet treatment apparatus |
| KR101928348B1 (ko) | 2011-04-08 | 2018-12-12 | 어플라이드 머티어리얼스, 인코포레이티드 | 자외선 처리, 화학적 처리, 및 증착을 위한 장치 및 방법 |
| US8492170B2 (en) * | 2011-04-25 | 2013-07-23 | Applied Materials, Inc. | UV assisted silylation for recovery and pore sealing of damaged low K films |
| US8216861B1 (en) | 2011-06-28 | 2012-07-10 | Applied Materials, Inc. | Dielectric recovery of plasma damaged low-k films by UV-assisted photochemical deposition |
-
2013
- 2013-06-07 TW TW102120427A patent/TWI581331B/zh active
- 2013-06-18 JP JP2015521627A patent/JP2015529011A/ja active Pending
- 2013-06-18 US US13/920,380 patent/US8993444B2/en not_active Expired - Fee Related
- 2013-06-18 KR KR1020147029230A patent/KR102109482B1/ko active Active
- 2013-06-18 CN CN201380036771.XA patent/CN104471687A/zh active Pending
- 2013-06-18 WO PCT/US2013/046285 patent/WO2014011364A1/en not_active Ceased
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