JP2015529011A - 多孔性低誘電率膜の誘電率を低減させる方法 - Google Patents
多孔性低誘電率膜の誘電率を低減させる方法 Download PDFInfo
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- JP2015529011A JP2015529011A JP2015521627A JP2015521627A JP2015529011A JP 2015529011 A JP2015529011 A JP 2015529011A JP 2015521627 A JP2015521627 A JP 2015521627A JP 2015521627 A JP2015521627 A JP 2015521627A JP 2015529011 A JP2015529011 A JP 2015529011A
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- dielectric constant
- dielectric film
- low dielectric
- silicon
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
Description
Black Diamond II(商標)低誘電率誘電膜は、低誘電率誘電膜内に損傷を誘発するために、エッチャント溶液(フッ化水素酸:水は1:100)に1分間浸された。損傷した低誘電率誘電膜は、余分なフッ化水素酸を除去するために脱イオン水でリンスされ、乾燥された。損傷した低誘電率誘電膜は、PRODUCER CVD処理チャンバ内に配置された。低誘電率誘電膜は約385℃まで加熱された。処理チャンバ内の圧力は約6Torrに調整された。ジメチルアミノトリメチルシラン(DMATMS)と共にヘリウムキャリアガスが、処理チャンバ内に流入された。DMATMS及びヘリウムキャリアガスの流量は、それぞれ、約1,000mgm及び2,000sccmであった。気相シリル化の処理時間は約3分間であった。
Black Diamond II(商標)低誘電率誘電膜は、低誘電率誘電膜内に損傷を誘発するために、エッチャント溶液(フッ化水素酸:水は1:100、又は希釈されたHFすなわちDHF)に5分間浸された。損傷した低誘電率誘電膜は、余分なフッ化水素酸を除去するために脱イオン水でリンスされ、乾燥された。損傷した低誘電率誘電膜は、PRODUCER CVD処理チャンバ内に配置された。低誘電率誘電膜は約385℃まで加熱された。処理チャンバ内の圧力は約6Torrに調整された。ジメチルアミノトリメチルシラン(DMATMS)と共にヘリウムキャリアガスが、処理チャンバ内に流入された。DMATMS及びヘリウムキャリアガスの流量は、それぞれ、約1,000mgm及び2,000sccmであった。気相シリル化の処理時間は約3分間であった。
Black Diamond II(商標)低誘電率誘電膜は、低誘電率誘電膜内に損傷を誘発するために、エッチャント溶液(フッ化水素酸:水は1:100、又は希釈されたHFすなわちDHF)に10分間浸された。損傷した低誘電率誘電膜は、余分なフッ化水素酸を除去するために脱イオン水でリンスされ、乾燥された。損傷した低誘電率誘電膜は、PRODUCER CVD処理チャンバ内に配置された。低誘電率誘電膜は約385℃まで加熱された。処理チャンバ内の圧力は約6Torrに調整された。ジメチルアミノトリメチルシラン(DMATMS)と共にヘリウムキャリアガスが、処理チャンバ内に流入された。DMATMS及びヘリウムキャリアガスの流量は、それぞれ、約1,000mgm及び2,000sccmであった。気相シリル化の処理時間は約3分間であった。
Claims (15)
- 低誘電率シリコン含有誘電膜の誘電率(k)を低下させる方法であって、
低誘電率シリコン含有誘電膜をフッ化水素酸溶液に曝露すること、及び、次いで、
前記低誘電率シリコン含有誘電膜をシリル化剤に曝露すること
を含む、方法。 - 前記低誘電率シリコン含有誘電膜は、前記フッ化水素酸溶液に曝露する前の前記低誘電率シリコン含有誘電体の誘電率(k)と比較して、前記シリル化剤に曝露した後により低い誘電率(k)を有する、請求項1に記載の方法。
- 前記低誘電率シリコン含有誘電膜は、3又はそれを下回る初期誘電率を有する、シリコンベースの誘電材料である、請求項1に記載の方法。
- 前記低誘電率シリコン含有誘電膜は、炭素及び水素を含有する、酸化ケイ素である、請求項3に記載の方法。
- 前記低誘電率シリコン含有誘電膜は、前記低誘電率シリコン含有誘電膜をフッ化水素酸溶液に曝露することよりも前に、平坦化プロセス、エッチングプロセス、ディフュージョンバリア堆積プロセス、金属堆積プロセス、及びこれらの組み合わせから選択される、集積化プロセスに曝露される、請求項1に記載の方法。
- 前記フッ化水素酸溶液は、前記低誘電率シリコン含有誘電膜のSi−O−Si結合網の一部を破壊して、Si−OH官能基を形成する、請求項1に記載の方法。
- 前記シリル化剤は、前記低誘電率シリコン含有誘電膜内のSi−OH官能基と反応し、前記低誘電率シリコン含有誘電膜内の炭素濃度を増大させる、請求項6に記載の方法。
- 前記低誘電率シリコン含有誘電膜を、紫外線硬化プロセスに曝露することをさらに含む、請求項1に記載の方法。
- 前記低誘電率シリコン含有誘電膜を紫外線硬化プロセスに曝露することは、前記低誘電率シリコン含有誘電膜をシリル化剤に曝露することよりも前に、前記低誘電率シリコン含有誘電膜をシリル化剤に曝露することと同時に、前記低誘電率シリコン含有誘電膜をシリル化剤に曝露することに続いて、又はこれらの組み合わせで、実施される、請求項8に記載の方法。
- 前記シリル化剤は、気相にあり、ヘキサメチルジシラザン(HMDS)、テトラメチルジシラザン(TMDS)、トリメチルクロロシラン(TMCS)、ジメチルジクロロシラン(DMDCS)、メチルトリクロロシラン(MTCS)、トリメチルメトキシシラン(TMMS)(CH3−O−Si−(CH3)3)、ジメチルジメトキシシラン(DMDMS)((CH3)2−Si−(OCH3)2)、メチルトリメトキシシラン(MTMS)((CH3−O)3−Si−CH3)、フェニルトリメトキシシラン(PTMOS)(C6H5−Si−(OCH3)3)、フェニルジメチルクロロシラン(PDMCS)(C6H5−Si(Cl)−(CH3)2)、ジメチルアミノトリメチルシラン(DMATMS)((CH3)2−N−Si−(CH3)3)、ビス(ジメチルアミノ)ジメチルシラン(BDMADMS)、及びこれらの組み合わせからなるグループから選択される、請求項1に記載の方法。
- 前記シリル化剤はDMATMSである、請求項10に記載の方法。
- 低誘電率シリコン含有誘電膜の誘電率(k)を低下させる方法であって、
低誘電率シリコン含有誘電膜をフッ化水素酸溶液に曝露すること、
前記低誘電率シリコン含有誘電膜を気化されたシリル化剤に曝露すること、及び、
前記低誘電率シリコン含有誘電膜を、紫外線(UV)硬化プロセスに曝露することを含む、方法。 - 低誘電率シリコン含有誘電膜を、気化されたシリル化剤に曝露すること、及び、低誘電率シリコン含有誘電膜を、紫外線硬化プロセスに曝露することは、同じ処理チャンバ内で実施される、請求項12に記載の方法。
- 前記UV硬化プロセスは、摂氏約100度から摂氏約800度までのUV硬化温度で実施される、請求項12に記載の方法。
- UV照射波長をシミュレートするために、遠隔プラズマ源により形成されるプラズマを使用することをさらに含む、請求項14に記載の方法。
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PCT/US2013/046285 WO2014011364A1 (en) | 2012-07-13 | 2013-06-18 | Method to reduce dielectric constant of a porous low-k film |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115190919A (zh) * | 2020-04-20 | 2022-10-14 | 应用材料公司 | 具有共用的气体输送和排气系统的多个热cvd腔室 |
US12037701B2 (en) | 2021-03-31 | 2024-07-16 | Applied Materials, Inc. | Multi-thermal CVD chambers with shared gas delivery and exhaust system |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5905476B2 (ja) * | 2010-10-19 | 2016-04-20 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Nanocureuvチャンバ用の石英シャワーヘッド |
US9318364B2 (en) | 2014-01-13 | 2016-04-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device metallization systems and methods |
US9362107B2 (en) * | 2014-09-30 | 2016-06-07 | Applied Materials, Inc. | Flowable low-k dielectric gapfill treatment |
KR102392447B1 (ko) * | 2017-04-27 | 2022-04-28 | 도쿄엘렉트론가부시키가이샤 | 패터닝 필름으로서 유기실리케이트를 사용하는 방법 및 시스템 |
US11469100B2 (en) | 2019-05-30 | 2022-10-11 | Applied Materials, Inc. | Methods of post treating dielectric films with microwave radiation |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000340651A (ja) * | 1999-05-28 | 2000-12-08 | Hitachi Chem Co Ltd | 低誘電率膜の製造法 |
JP2002324838A (ja) * | 2001-03-15 | 2002-11-08 | Chartered Semiconductor Mfg Ltd | デュアルダマシン相互接続における有機物誘電体の密着性を改良する方法 |
JP2006049798A (ja) * | 2004-07-02 | 2006-02-16 | Tokyo Electron Ltd | 溝配線または接続孔を有する半導体装置の製造方法 |
JP2006077245A (ja) * | 2004-09-07 | 2006-03-23 | Rohm & Haas Electronic Materials Llc | 多孔質物質およびその製造方法 |
JP2010287655A (ja) * | 2009-06-10 | 2010-12-24 | Toshiba Corp | 半導体装置の製造方法 |
US20110117678A1 (en) * | 2006-10-30 | 2011-05-19 | Varadarajan Bhadri N | Carbon containing low-k dielectric constant recovery using uv treatment |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6475930B1 (en) * | 2000-01-31 | 2002-11-05 | Motorola, Inc. | UV cure process and tool for low k film formation |
EP1172847A3 (en) * | 2000-07-10 | 2004-07-28 | Interuniversitair Micro-Elektronica Centrum Vzw | A method to produce a porous oxygen-silicon layer |
US7541200B1 (en) * | 2002-01-24 | 2009-06-02 | Novellus Systems, Inc. | Treatment of low k films with a silylating agent for damage repair |
US7709371B2 (en) * | 2003-01-25 | 2010-05-04 | Honeywell International Inc. | Repairing damage to low-k dielectric materials using silylating agents |
US7049247B2 (en) * | 2004-05-03 | 2006-05-23 | International Business Machines Corporation | Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made |
US7678682B2 (en) * | 2004-11-12 | 2010-03-16 | Axcelis Technologies, Inc. | Ultraviolet assisted pore sealing of porous low k dielectric films |
CN1787186A (zh) * | 2004-12-09 | 2006-06-14 | 富士通株式会社 | 半导体器件制造方法 |
US20060251827A1 (en) | 2005-05-09 | 2006-11-09 | Applied Materials, Inc. | Tandem uv chamber for curing dielectric materials |
US7482281B2 (en) | 2005-09-29 | 2009-01-27 | Tokyo Electron Limited | Substrate processing method |
US7500397B2 (en) * | 2007-02-15 | 2009-03-10 | Air Products And Chemicals, Inc. | Activated chemical process for enhancing material properties of dielectric films |
US20090061633A1 (en) | 2007-08-31 | 2009-03-05 | Fujitsu Limited | Method of manufacturing semiconductor device |
JP5304033B2 (ja) * | 2007-08-31 | 2013-10-02 | 富士通株式会社 | 半導体装置の製造方法 |
US20100065758A1 (en) * | 2008-09-16 | 2010-03-18 | Tokyo Electron Limited | Dielectric material treatment system and method of operating |
US20100087062A1 (en) | 2008-10-06 | 2010-04-08 | Applied Materials, Inc. | High temperature bd development for memory applications |
US20110232677A1 (en) | 2010-03-29 | 2011-09-29 | Tokyo Electron Limited | Method for cleaning low-k dielectrics |
JP5976776B2 (ja) | 2011-04-08 | 2016-08-24 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Uv処理、化学処理、および堆積のための装置および方法 |
US8492170B2 (en) * | 2011-04-25 | 2013-07-23 | Applied Materials, Inc. | UV assisted silylation for recovery and pore sealing of damaged low K films |
US8216861B1 (en) | 2011-06-28 | 2012-07-10 | Applied Materials, Inc. | Dielectric recovery of plasma damaged low-k films by UV-assisted photochemical deposition |
-
2013
- 2013-06-07 TW TW102120427A patent/TWI581331B/zh active
- 2013-06-18 KR KR1020147029230A patent/KR102109482B1/ko active IP Right Grant
- 2013-06-18 JP JP2015521627A patent/JP2015529011A/ja active Pending
- 2013-06-18 US US13/920,380 patent/US8993444B2/en not_active Expired - Fee Related
- 2013-06-18 CN CN201380036771.XA patent/CN104471687A/zh active Pending
- 2013-06-18 WO PCT/US2013/046285 patent/WO2014011364A1/en active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000340651A (ja) * | 1999-05-28 | 2000-12-08 | Hitachi Chem Co Ltd | 低誘電率膜の製造法 |
JP2002324838A (ja) * | 2001-03-15 | 2002-11-08 | Chartered Semiconductor Mfg Ltd | デュアルダマシン相互接続における有機物誘電体の密着性を改良する方法 |
JP2006049798A (ja) * | 2004-07-02 | 2006-02-16 | Tokyo Electron Ltd | 溝配線または接続孔を有する半導体装置の製造方法 |
JP2006077245A (ja) * | 2004-09-07 | 2006-03-23 | Rohm & Haas Electronic Materials Llc | 多孔質物質およびその製造方法 |
US20110117678A1 (en) * | 2006-10-30 | 2011-05-19 | Varadarajan Bhadri N | Carbon containing low-k dielectric constant recovery using uv treatment |
JP2010287655A (ja) * | 2009-06-10 | 2010-12-24 | Toshiba Corp | 半導体装置の製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115190919A (zh) * | 2020-04-20 | 2022-10-14 | 应用材料公司 | 具有共用的气体输送和排气系统的多个热cvd腔室 |
JP7462763B2 (ja) | 2020-04-20 | 2024-04-05 | アプライド マテリアルズ インコーポレイテッド | 共有供給及び排気システムを備えたマルチ熱cvdチャンバ |
US12037701B2 (en) | 2021-03-31 | 2024-07-16 | Applied Materials, Inc. | Multi-thermal CVD chambers with shared gas delivery and exhaust system |
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