JP2008235660A5 - - Google Patents

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Publication number
JP2008235660A5
JP2008235660A5 JP2007074592A JP2007074592A JP2008235660A5 JP 2008235660 A5 JP2008235660 A5 JP 2008235660A5 JP 2007074592 A JP2007074592 A JP 2007074592A JP 2007074592 A JP2007074592 A JP 2007074592A JP 2008235660 A5 JP2008235660 A5 JP 2008235660A5
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JP
Japan
Prior art keywords
ashing
substrate
processed
reactive gas
radical
Prior art date
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Application number
JP2007074592A
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English (en)
Japanese (ja)
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JP4884268B2 (ja
JP2008235660A (ja
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Application filed filed Critical
Priority to JP2007074592A priority Critical patent/JP4884268B2/ja
Priority claimed from JP2007074592A external-priority patent/JP4884268B2/ja
Priority to US12/052,239 priority patent/US7892986B2/en
Publication of JP2008235660A publication Critical patent/JP2008235660A/ja
Publication of JP2008235660A5 publication Critical patent/JP2008235660A5/ja
Application granted granted Critical
Publication of JP4884268B2 publication Critical patent/JP4884268B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007074592A 2007-03-22 2007-03-22 アッシング方法 Expired - Fee Related JP4884268B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007074592A JP4884268B2 (ja) 2007-03-22 2007-03-22 アッシング方法
US12/052,239 US7892986B2 (en) 2007-03-22 2008-03-20 Ashing method and apparatus therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007074592A JP4884268B2 (ja) 2007-03-22 2007-03-22 アッシング方法

Publications (3)

Publication Number Publication Date
JP2008235660A JP2008235660A (ja) 2008-10-02
JP2008235660A5 true JP2008235660A5 (enExample) 2010-02-18
JP4884268B2 JP4884268B2 (ja) 2012-02-29

Family

ID=39775196

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007074592A Expired - Fee Related JP4884268B2 (ja) 2007-03-22 2007-03-22 アッシング方法

Country Status (2)

Country Link
US (1) US7892986B2 (enExample)
JP (1) JP4884268B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7802917B2 (en) * 2005-08-05 2010-09-28 Lam Research Corporation Method and apparatus for chuck thermal calibration
TWI445065B (zh) * 2009-12-18 2014-07-11 J E T Co Ltd Substrate processing device
JP2013033965A (ja) * 2011-07-29 2013-02-14 Semes Co Ltd 基板処理装置、基板処理設備、及び基板処理方法
JP6165518B2 (ja) * 2013-06-25 2017-07-19 株式会社日立ハイテクノロジーズ プラズマ処理方法および真空処理装置
JP6153095B2 (ja) * 2014-12-19 2017-06-28 信越半導体株式会社 エピタキシャルウェーハの製造方法
KR101928011B1 (ko) * 2017-07-17 2018-12-11 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US10354883B2 (en) * 2017-10-03 2019-07-16 Mattson Technology, Inc. Surface treatment of silicon or silicon germanium surfaces using organic radicals
CN109994375A (zh) * 2018-01-03 2019-07-09 联华电子股份有限公司 去除图案化光致抗蚀剂的方法
JP2019192892A (ja) 2018-04-18 2019-10-31 東京エレクトロン株式会社 処理システムおよび処理方法
CN114442443B (zh) * 2020-10-30 2025-09-02 江苏鲁汶仪器股份有限公司 一种光刻胶剥离方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0787192B2 (ja) 1986-09-19 1995-09-20 東京応化工業株式会社 プラズマ反応処理装置
JP3395490B2 (ja) * 1995-11-30 2003-04-14 ソニー株式会社 レジスト・アッシング方法およびこれに用いるアッシング装置
JP3393399B2 (ja) * 1996-09-24 2003-04-07 アクセリス テクノロジーズ インコーポレーテッド アッシング方法
JPH1167738A (ja) * 1997-08-18 1999-03-09 Oki Electric Ind Co Ltd アッシング方法および装置
US6592771B1 (en) 1999-04-08 2003-07-15 Sony Corporation Vapor-phase processing method and apparatus therefor
US6951823B2 (en) * 2001-05-14 2005-10-04 Axcelis Technologies, Inc. Plasma ashing process
JP2004103747A (ja) * 2002-09-09 2004-04-02 Renesas Technology Corp 半導体装置の製造方法
JP2006073612A (ja) * 2004-08-31 2006-03-16 Rohm Co Ltd レジスト除去方法

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