JP2009246318A5 - - Google Patents

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Publication number
JP2009246318A5
JP2009246318A5 JP2008094501A JP2008094501A JP2009246318A5 JP 2009246318 A5 JP2009246318 A5 JP 2009246318A5 JP 2008094501 A JP2008094501 A JP 2008094501A JP 2008094501 A JP2008094501 A JP 2008094501A JP 2009246318 A5 JP2009246318 A5 JP 2009246318A5
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JP
Japan
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processing
processing chamber
gas supply
gas
processing gas
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JP2008094501A
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English (en)
Japanese (ja)
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JP5306691B2 (ja
JP2009246318A (ja
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Priority claimed from JP2008094501A external-priority patent/JP5306691B2/ja
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Publication of JP2009246318A5 publication Critical patent/JP2009246318A5/ja
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JP2008094501A 2008-04-01 2008-04-01 半導体装置の製造方法、基板処理方法および基板処理装置 Active JP5306691B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008094501A JP5306691B2 (ja) 2008-04-01 2008-04-01 半導体装置の製造方法、基板処理方法および基板処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008094501A JP5306691B2 (ja) 2008-04-01 2008-04-01 半導体装置の製造方法、基板処理方法および基板処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012279074A Division JP5557896B2 (ja) 2012-12-21 2012-12-21 半導体装置の製造方法、基板処理方法および基板処理装置

Publications (3)

Publication Number Publication Date
JP2009246318A JP2009246318A (ja) 2009-10-22
JP2009246318A5 true JP2009246318A5 (enExample) 2011-01-27
JP5306691B2 JP5306691B2 (ja) 2013-10-02

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ID=41307862

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JP2008094501A Active JP5306691B2 (ja) 2008-04-01 2008-04-01 半導体装置の製造方法、基板処理方法および基板処理装置

Country Status (1)

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JP (1) JP5306691B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009253195A (ja) * 2008-04-10 2009-10-29 Toshiba Corp 半導体装置の製造方法、及び半導体装置
JP5541223B2 (ja) * 2010-07-29 2014-07-09 東京エレクトロン株式会社 成膜方法及び成膜装置
CN102345111B (zh) * 2010-07-29 2015-03-04 东京毅力科创株式会社 成膜方法和成膜装置
US9530641B2 (en) 2012-11-26 2016-12-27 Hitachi Kokusai Electric Inc. Method for manufacturing semiconductor device, substrate processing apparatus, and recording medium
JP5557896B2 (ja) * 2012-12-21 2014-07-23 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001066832A2 (en) * 2000-03-07 2001-09-13 Asm America, Inc. Graded thin films
JP3937892B2 (ja) * 2002-04-01 2007-06-27 日本電気株式会社 薄膜形成方法および半導体装置の製造方法
JP2005235987A (ja) * 2004-02-19 2005-09-02 Toshiba Corp 半導体記憶装置及び半導体記憶装置の製造方法
JP2006261434A (ja) * 2005-03-17 2006-09-28 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude シリコン酸化膜の形成方法
JP4711733B2 (ja) * 2005-05-12 2011-06-29 株式会社Adeka 酸化珪素系薄膜の製造方法
JP2008053683A (ja) * 2006-07-27 2008-03-06 Matsushita Electric Ind Co Ltd 絶縁膜形成方法、半導体装置、および基板処理装置

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