JP4884268B2 - アッシング方法 - Google Patents

アッシング方法 Download PDF

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Publication number
JP4884268B2
JP4884268B2 JP2007074592A JP2007074592A JP4884268B2 JP 4884268 B2 JP4884268 B2 JP 4884268B2 JP 2007074592 A JP2007074592 A JP 2007074592A JP 2007074592 A JP2007074592 A JP 2007074592A JP 4884268 B2 JP4884268 B2 JP 4884268B2
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JP
Japan
Prior art keywords
ashing
substrate
processed
resist
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007074592A
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English (en)
Japanese (ja)
Other versions
JP2008235660A5 (enExample
JP2008235660A (ja
Inventor
滋 田原
栄一 西村
久美子 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2007074592A priority Critical patent/JP4884268B2/ja
Priority to US12/052,239 priority patent/US7892986B2/en
Publication of JP2008235660A publication Critical patent/JP2008235660A/ja
Publication of JP2008235660A5 publication Critical patent/JP2008235660A5/ja
Application granted granted Critical
Publication of JP4884268B2 publication Critical patent/JP4884268B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2007074592A 2007-03-22 2007-03-22 アッシング方法 Expired - Fee Related JP4884268B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007074592A JP4884268B2 (ja) 2007-03-22 2007-03-22 アッシング方法
US12/052,239 US7892986B2 (en) 2007-03-22 2008-03-20 Ashing method and apparatus therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007074592A JP4884268B2 (ja) 2007-03-22 2007-03-22 アッシング方法

Publications (3)

Publication Number Publication Date
JP2008235660A JP2008235660A (ja) 2008-10-02
JP2008235660A5 JP2008235660A5 (enExample) 2010-02-18
JP4884268B2 true JP4884268B2 (ja) 2012-02-29

Family

ID=39775196

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007074592A Expired - Fee Related JP4884268B2 (ja) 2007-03-22 2007-03-22 アッシング方法

Country Status (2)

Country Link
US (1) US7892986B2 (enExample)
JP (1) JP4884268B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7802917B2 (en) * 2005-08-05 2010-09-28 Lam Research Corporation Method and apparatus for chuck thermal calibration
TWI445065B (zh) * 2009-12-18 2014-07-11 J E T Co Ltd Substrate processing device
JP2013033965A (ja) * 2011-07-29 2013-02-14 Semes Co Ltd 基板処理装置、基板処理設備、及び基板処理方法
JP6165518B2 (ja) * 2013-06-25 2017-07-19 株式会社日立ハイテクノロジーズ プラズマ処理方法および真空処理装置
JP6153095B2 (ja) * 2014-12-19 2017-06-28 信越半導体株式会社 エピタキシャルウェーハの製造方法
KR101928011B1 (ko) * 2017-07-17 2018-12-11 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US10354883B2 (en) * 2017-10-03 2019-07-16 Mattson Technology, Inc. Surface treatment of silicon or silicon germanium surfaces using organic radicals
CN109994375A (zh) * 2018-01-03 2019-07-09 联华电子股份有限公司 去除图案化光致抗蚀剂的方法
JP2019192892A (ja) 2018-04-18 2019-10-31 東京エレクトロン株式会社 処理システムおよび処理方法
CN114442443B (zh) * 2020-10-30 2025-09-02 江苏鲁汶仪器股份有限公司 一种光刻胶剥离方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0787192B2 (ja) 1986-09-19 1995-09-20 東京応化工業株式会社 プラズマ反応処理装置
JP3395490B2 (ja) * 1995-11-30 2003-04-14 ソニー株式会社 レジスト・アッシング方法およびこれに用いるアッシング装置
JP3393399B2 (ja) * 1996-09-24 2003-04-07 アクセリス テクノロジーズ インコーポレーテッド アッシング方法
JPH1167738A (ja) * 1997-08-18 1999-03-09 Oki Electric Ind Co Ltd アッシング方法および装置
US6592771B1 (en) 1999-04-08 2003-07-15 Sony Corporation Vapor-phase processing method and apparatus therefor
US6951823B2 (en) * 2001-05-14 2005-10-04 Axcelis Technologies, Inc. Plasma ashing process
JP2004103747A (ja) * 2002-09-09 2004-04-02 Renesas Technology Corp 半導体装置の製造方法
JP2006073612A (ja) * 2004-08-31 2006-03-16 Rohm Co Ltd レジスト除去方法

Also Published As

Publication number Publication date
US7892986B2 (en) 2011-02-22
JP2008235660A (ja) 2008-10-02
US20080233766A1 (en) 2008-09-25

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