JP2009530494A - 成膜システム内の粒子コンタミネーションを抑制する方法および機器 - Google Patents
成膜システム内の粒子コンタミネーションを抑制する方法および機器 Download PDFInfo
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- 239000002245 particle Substances 0.000 title claims abstract description 102
- 238000000034 method Methods 0.000 title claims abstract description 83
- 238000011109 contamination Methods 0.000 title claims abstract description 12
- 239000002243 precursor Substances 0.000 claims abstract description 277
- 239000000758 substrate Substances 0.000 claims abstract description 149
- 238000009826 distribution Methods 0.000 claims abstract description 101
- 238000001704 evaporation Methods 0.000 claims abstract description 71
- 230000008020 evaporation Effects 0.000 claims abstract description 69
- 230000008021 deposition Effects 0.000 claims abstract description 40
- 239000007789 gas Substances 0.000 claims description 234
- 229910052751 metal Inorganic materials 0.000 claims description 229
- 239000002184 metal Substances 0.000 claims description 229
- 238000012545 processing Methods 0.000 claims description 126
- 239000010408 film Substances 0.000 claims description 122
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 99
- 239000012159 carrier gas Substances 0.000 claims description 73
- 230000008569 process Effects 0.000 claims description 61
- 238000000151 deposition Methods 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 16
- NQZFAUXPNWSLBI-UHFFFAOYSA-N carbon monoxide;ruthenium Chemical group [Ru].[Ru].[Ru].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] NQZFAUXPNWSLBI-UHFFFAOYSA-N 0.000 claims description 14
- 238000000427 thin-film deposition Methods 0.000 claims description 11
- 239000010948 rhodium Substances 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 6
- ZIZHEHXAMPQGEK-UHFFFAOYSA-N dirhenium decacarbonyl Chemical group [Re].[Re].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] ZIZHEHXAMPQGEK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052703 rhodium Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- VUBLMKVEIPBYME-UHFFFAOYSA-N carbon monoxide;osmium Chemical group [Os].[Os].[Os].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] VUBLMKVEIPBYME-UHFFFAOYSA-N 0.000 claims description 2
- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical group [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- 238000005019 vapor deposition process Methods 0.000 claims description 2
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- 238000000354 decomposition reaction Methods 0.000 description 9
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- 239000011261 inert gas Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
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- 229910052707 ruthenium Inorganic materials 0.000 description 7
- 238000007789 sealing Methods 0.000 description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 5
- 230000002776 aggregation Effects 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 239000003870 refractory metal Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
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- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
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- 229910052734 helium Inorganic materials 0.000 description 3
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- 229910052743 krypton Inorganic materials 0.000 description 3
- 229910052754 neon Inorganic materials 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
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- 238000002230 thermal chemical vapour deposition Methods 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
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- 238000006731 degradation reaction Methods 0.000 description 2
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- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 2
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920002449 FKM Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910004529 TaF 5 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
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- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- 125000006850 spacer group Chemical group 0.000 description 1
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- 230000003746 surface roughness Effects 0.000 description 1
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- -1 tungsten halogen Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/45568—Porous nozzles
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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Abstract
Description
前記基板を支持し、該基板を加熱するように構成された基板ホルダ、前記基板の上部に金属前駆体蒸気を導入するように構成された蒸気分配システム、および前記処理チャンバを排気するように構成された排気システムを有する処理チャンバと、
金属前駆体を蒸発させ、金属前駆体蒸気を形成するように構成された、金属前駆体蒸発システムと、
前記金属前駆体蒸発システムに結合された第1の端部、および前記処理チャンバの前記蒸気分配システムの入口に結合された第2の端部を有する蒸気供給システムと、
前記金属前駆体蒸発システム、前記蒸気供給システム、およびその両方のうちの少なくとも一つに結合され、キャリアガスを供給するように構成されたキャリアガス供給システムであって、前記蒸気分配システムの前記入口に、前記蒸気供給システムを介して、前記キャリアガス中に前記金属前駆体蒸気を搬送するキャリアガス供給システムと、
前記キャリアガスおよび前記金属前駆体蒸気の流経路に沿って、当該成膜システムの内部に配置された、1または2以上の粒子拡散器と、
を有する成膜システムが開示される。
前記薄膜成膜システムと密閉結合されるように構成された出口、およびキャリアガス供給システムと密閉結合されるように構成された入口を有する容器と、
前記容器内に受容されるように構成された、1または2以上のトレイを有するトレイスタックであって、前記1または2以上のトレイの各々内の金属前駆体材料を支持し、蒸発させ、金属前駆体蒸気が形成されるように構成されたトレイスタックと、
前記キャリアガス供給システムからのキャリアガスの流経路内、および前記容器の前記入口と前記出口の間の金属前駆体蒸気の流経路内に配置された、1または2以上の粒子拡散器と、
を有する膜前駆体蒸発システムが開示される。
当該方法は、
成膜システムの処理チャンバ内に、基板を提供するステップと、
金属カルボニル前駆体蒸気およびCOガスを含む処理ガスを形成するステップと、
前記処理ガスを、前記処理チャンバに導入するステップと、
前記基板の粒子コンタミネーションを抑制するため、前記成膜システムの内部に、1または2以上の粒子拡散器を配置するステップと、
前記希釈された処理ガスに前記基板を暴露して、気相成膜処理プロセスにより、前記基板上に金属層を成膜するステップと、
を有する方法が開示される。
Claims (20)
- 基板上に耐熱金属膜を形成する成膜システムであって、
前記基板を支持し、該基板を加熱するように構成された基板ホルダ、前記基板の上部に金属前駆体蒸気を導入するように構成された蒸気分配システム、および前記処理チャンバを排気するように構成された排気システムを有する処理チャンバと、
金属前駆体を蒸発させ、金属前駆体蒸気を形成するように構成された、金属前駆体蒸発システムと、
前記金属前駆体蒸発システムに結合された第1の端部、および前記処理チャンバの前記蒸気分配システムの入口に結合された第2の端部を有する蒸気供給システムと、
前記金属前駆体蒸発システム、前記蒸気供給システム、およびその両方のうちの少なくとも一つに結合され、キャリアガスを供給するように構成されたキャリアガス供給システムであって、前記蒸気分配システムの前記入口に、前記蒸気供給システムを介して、前記キャリアガス中に前記金属前駆体蒸気を搬送するキャリアガス供給システムと、
前記キャリアガスおよび前記金属前駆体蒸気の流経路に沿って、当該成膜システムの内部に配置された、1または2以上の粒子拡散器と、
を有する成膜システム。 - 前記1または2以上の粒子拡散器は、前記金属前駆体蒸発システム、前記蒸気供給システム、前記蒸気分配システム、またはこれらの2もしくは3以上の内部に配置されることを特徴とする請求項1に記載の成膜システム。
- 前記金属前駆体蒸発システムは、前記金属前駆体を支持するように構成された1または2以上の前駆体トレイを有し、
前記1または2以上の粒子拡散器は、前記金属前駆体の上部の、前記1または2以上の前駆体トレイの少なくとも一つに結合されることを特徴とする請求項1に記載の成膜システム。 - 前記1または2以上の粒子拡散器は、前記金属前駆体蒸発システムの出口に結合されることを特徴とする請求項1に記載の成膜システム。
- 前記金属前駆体蒸発システムは、前記金属前駆体を支持するように構成された、1または2以上の前駆体トレイを有し、
前記1または2以上の粒子拡散器は、前記1または2以上の前駆体トレイの少なくとも一つの出口に結合されることを特徴とする請求項1に記載の成膜システム。 - 前記1または2以上の粒子拡散器は、前記蒸気供給システムの前記第1の端部、前記蒸気供給システムの前記第2の端部、または両者の間のいずれかの位置に結合されることを特徴とする請求項1に記載の成膜システム。
- 前記蒸気分配システムは、前記蒸気供給システムの前記第2の端部に結合された前記入口を有するハウジングと、前記ハウジングに結合された蒸気分散板とを有し、
前記ハウジングと前記蒸気分散板の組み合わせにより、前記キャリアガスと、前記金属前駆体蒸気とを受容するプレナムが形成され、
前記キャリアガスおよび前記金属前駆体蒸気は、前記蒸気分散板の1または2以上の開口を介して、前記処理チャンバ内で分配され、
前記1または2以上の粒子拡散器は、前記プレナム内に配置されることを特徴とする請求項1に記載の成膜システム。 - 前記1または2以上の粒子拡散器は、メッシュまたはスクリーンを有することを特徴とする請求項1に記載の成膜システム。
- 前記1または2以上の粒子拡散器は、ハニカム構造を有することを特徴とする請求項1に記載の成膜システム。
- 前記ハニカム構造は、1または2以上のハニカムセルを有し、
各セルは、有効な直径および全長により特徴化されることを特徴とする請求項9に記載の成膜システム。 - 前記1または2以上の粒子拡散器の各々は、1または2以上の開口を有し、
これにより、前記キャリアガスおよび前記金属前駆体蒸気の流通が可能となり、
前記1または2以上の開口は、前記流経路と実質的に整列されていることを特徴とする請求項1に記載の成膜システム。 - 前記1または2以上の粒子拡散器の各々は、1または2以上の開口を有し、
これにより、前記キャリアガスおよび前記金属前駆体蒸気の流通が可能となり、
前記1または2以上の開口は、前記流経路に対して傾斜され、または湾曲していることを特徴とする請求項1に記載の成膜システム。 - 前記金属前駆体は、金属カルボニルを含むことを特徴とする請求項1に記載の成膜システム。
- 前記金属カルボニル前駆体は、タングステンカルボニル、モリブデンカルボニル、コバルトカルボニル、ロジウムカルボニル、レニウムカルボニル、クロムカルボニル、ルテニウムカルボニル、オスミウムカルボニル、またはこれらの2もしくは3以上の組み合わせを含むことを特徴とする請求項13に記載の成膜システム。
- 前記金属カルボニル前駆体は、W(CO)6、Mo(CO)6、Co2(CO)8、Rh4(CO)12、Re2(CO)10、Cr(CO)6、Ru3(CO)12、Os3(CO)12、またはこれらの2もしくは3以上の組み合わせを含むことを特徴とする請求項13に記載の成膜システム。
- 薄膜成膜システムに結合されるように構成された膜前駆体蒸発システムであって、
前記薄膜成膜システムと密閉結合されるように構成された出口、およびキャリアガス供給システムと密閉結合されるように構成された入口を有する容器と、
前記容器内に受容されるように構成された、1または2以上のトレイを有するトレイスタックであって、前記1または2以上のトレイの各々内の金属前駆体材料を支持し、蒸発させ、金属前駆体蒸気が形成されるように構成されたトレイスタックと、
前記キャリアガス供給システムからのキャリアガスの流経路内、および前記容器の前記入口と前記出口の間の金属前駆体蒸気の流経路内に配置された、1または2以上の粒子拡散器と、
を有する膜前駆体蒸発システム。 - 前記容器は、前記入口を介した前記キャリアガスの流れを受容するように構成されたキャリアガス供給空間を有し、これにより、
1または2以上のトレイの各々内の1または2以上のオリフィスを介して、前記1または2以上のトレイ内の前記前駆体材料に、前記キャリアガスの前記流れの一部が導入され、
前記前駆体材料の上部での前記キャリアガスの前記流れの前記一部の各々は、前記前駆体蒸気とともに、前記出口に空気圧結合された蒸発排気空間内で共同で受容されることを特徴とする請求項16に記載の膜前駆体蒸発システム。 - 前記1または2以上の粒子拡散器は、前記出口に、または前記1もしくは2以上のトレイの各々に結合されることを特徴とする請求項16に記載の膜前駆体蒸発システム。
- 前記1または2以上の粒子拡散器は、ハニカム構造を有することを特徴とする請求項16に記載の膜前駆体蒸発システム。
- 基板上に金属層を成膜する方法であって、
当該方法は、
成膜システムの処理チャンバ内に、基板を提供するステップと、
金属カルボニル前駆体蒸気およびCOガスを含む処理ガスを形成するステップと、
前記処理ガスを、前記処理チャンバに導入するステップと、
前記基板の粒子コンタミネーションを抑制するため、前記成膜システムの内部に、1または2以上の粒子拡散器を配置するステップと、
前記希釈された処理ガスに前記基板を暴露して、気相成膜処理プロセスにより、前記基板上に金属層を成膜するステップと、
を有する方法。
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KR20080106578A (ko) | 2008-12-08 |
JP5566100B2 (ja) | 2014-08-06 |
CN101405433B (zh) | 2012-02-22 |
US20070215048A1 (en) | 2007-09-20 |
WO2007109410A2 (en) | 2007-09-27 |
US8268078B2 (en) | 2012-09-18 |
WO2007109410A3 (en) | 2007-11-15 |
CN101405433A (zh) | 2009-04-08 |
KR101372793B1 (ko) | 2014-03-14 |
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