JP5015002B2 - マルチトレイの膜用前駆体気化システム、及び、該システムを内蔵する薄膜成膜システム - Google Patents
マルチトレイの膜用前駆体気化システム、及び、該システムを内蔵する薄膜成膜システム Download PDFInfo
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- 239000002243 precursor Substances 0.000 title claims abstract description 244
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- 239000010409 thin film Substances 0.000 claims description 14
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- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 9
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 125000006850 spacer group Chemical group 0.000 claims description 2
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- NQZFAUXPNWSLBI-UHFFFAOYSA-N carbon monoxide;ruthenium Chemical group [Ru].[Ru].[Ru].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] NQZFAUXPNWSLBI-UHFFFAOYSA-N 0.000 description 13
- 239000000463 material Substances 0.000 description 12
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- 229910052707 ruthenium Inorganic materials 0.000 description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
- 230000002776 aggregation Effects 0.000 description 4
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- 239000006227 byproduct Substances 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- ZIZHEHXAMPQGEK-UHFFFAOYSA-N dirhenium decacarbonyl Chemical group [Re].[Re].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] ZIZHEHXAMPQGEK-UHFFFAOYSA-N 0.000 description 4
- -1 carbon monoxide Chemical compound 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
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- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 150000002739 metals Chemical class 0.000 description 1
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- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
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- 150000003624 transition metals Chemical class 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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Description
又は、
Ru3(CO)x*(ad)⇔3Ru(s)+xCO(g) (2)
ここで、これらの副生成物は、成膜システム1の内側表面上に吸着、つまり凝集する恐れがある。これらの表面上に材料が蓄積することにより、プロセスの再現性のような、一の基板からその次の基板にかけて問題が生じる恐れがある。あるいはその代わりに、たとえばルテニウムカルボニル前駆体が、温度が上昇しない場所で凝集することで、再結晶化を起こす恐れがある。つまり、以下の式で表される事態である。
しかしプロセスウインドウの小さいそのようなシステム内部では、ルテニウムカルボニルの蒸気圧が低くなることを1つの理由として、成膜レートは極端に低くなる。たとえば成膜レートは、約1Å/分程度の低さになるだろう。従って一の実施例に従うと、気化温度は、約40℃以上に上昇する。あるいはその代わりに、気化温度は、約50℃以上に上昇する。本発明の典型的実施例では、気化温度は、約60℃以上に上昇する。別な典型的実施例では、気化温度は、約60℃から100℃の範囲、たとえば約60℃から90℃へ上昇する。温度上昇によって蒸気圧が高くなるため、蒸発レートは増大する(たとえばほぼ桁で大きくなる)。従って、発明者らは成膜レートが増大することを予想している。1つ以上の基板の処理に続いて、成膜システム1を周期的に洗浄することもまた望ましいと思われる。たとえば、洗浄方法及びシステムについてのさらなる詳細は、同時係属している特許文献1から得ることができる。
Claims (22)
- 薄膜成膜システムと結合するように備えられている膜用前駆体気化システムであって:
ヒーターと結合することで加熱されて温度上昇する、外壁及び底部を有する格納容器;
前記格納容器と密閉可能な状態で結合するように備えられ、前記薄膜成膜システムと密閉可能な状態で結合するように備えられた排気口を有する蓋;
前記の格納容器底部に存在するように備えられ、前記底部トレイ及び底部支持端部上に前記膜用前駆体を保持するように備えられた底部外壁を有する底部トレイ;及び
前記底部支持端部上で支持される第1上部トレイを有する1つ以上の上部トレイであって、当該1つ以上の上部トレイは1つ以上の任意で追加される上部トレイをさらに有し、前記1つ以上の任意で追加される上部トレイは当該1つ以上の上部トレイのうちの直前に追加されたトレイ上又は前記第1上部トレイ上に位置するように備えられる、1つ以上の上部トレイ;
を有するトレイ積層体であって、
前記1つ以上の上部トレイの各々は、前記任意で追加される上部層のうちの1つを支持する上部支持端部を有する上部外壁、及び、前記上部外壁よりも低い上部内壁を有し、
前記上部外壁及び前記上部内壁は、それらの間に存在する前記膜用前駆体を保持するように備えられ、
前記上部内壁は中心部に存在するフローチャネルを前記格納容器内に画定する、
トレイ積層体;
キャリアガスを供給するキャリアガス供給システムと結合するように備えられていて、前記トレイ積層体の前記底部外壁及び上部外壁と前記格納容器の前記外壁との間に存在する環状空間;及び
前記環状空間と結合し、前記トレイ積層体の前記底部外壁及び前記上部外壁中に設けられている1個以上の開口部であって、前記環状空間から前記膜用前駆体の上を通って、前記中心部に存在するフローチャネルへキャリアガスを流し、かつ前記蓋中に設けられている前記排気口を通って膜用前駆体蒸気と共に前記キャリアガスを排出するように備えられている、1個以上の開口部;
を有する膜用前駆体気化システム。 - 前記膜用前駆体が固相金属前駆体である、請求項1に記載の膜用前駆体気化システム。
- 前記固相金属前駆体が固体粉末の形態を有する、請求項2に記載の膜用前駆体気化システム。
- 前記固相金属前駆体が固体錠剤の形態を有する、請求項2に記載の膜用前駆体気化システム。
- 前記膜用前駆体が、W(CO)6、Mo(CO)6、Co2(CO)6、Rh4(CO)12、Re2(CO)10、Cr(CO)6、Ru3(CO)12、又はOs3(CO)12から選ばれる固相金属カルボニルを有する、請求項1に記載の膜用前駆体気化システム。
- 前記1つ以上の上部トレイが、多部品からなる多重トレイ積層体を形成するために前記底部トレイに積層するための分離可能で積層可能なトレイである、請求項1に記載の膜用前駆体気化システム。
- 前記の1つ以上の上部トレイが一体化して積層されることで、前記底部トレイの外壁と前記1つ以上の上部トレイの外壁とが一体化して単一かつ1つとなった多重トレイ構造が形成される、請求項1に記載の膜用前駆体気化システム。
- 前記格納容器が、前記底部トレイの前記底部外壁及び前記1つ以上の上部トレイの前記上部外壁を、前記格納容器の前記外壁から離すように備えられている1つ以上のスペーサをさらに有する、請求項1に記載の膜用前駆体気化システム。
- 前記格納容器が円柱形状を有し、かつ
前記格納容器の前記外壁の内径が10cmから100cmの範囲である、
請求項1に記載の膜用前駆体気化システム。 - 前記底部トレイ及び前記上部トレイの各々が円筒形状で、
前記底部外壁の直径及び前記上部外壁の各々の直径が、前記格納容器の前記外壁の前記内径の75%から99%の範囲で、かつ
前記1つ以上の上部トレイの前記内壁の内径が1cmから30cmの範囲である、
請求項9に記載の膜用前駆体気化システム。 - 前記1つ以上の開口部が1つ以上のスロット又はオリフィスを有する、請求項1に記載の膜用前駆体気化システム。
- 前記1つ以上のオリフィスの各々の直径が0.4mmから1mmの範囲で、かつ
前記1つ以上のオリフィスの数が2個から1000個の範囲である、
請求項11に記載の膜用前駆体気化システム。 - 前記底部外壁及び前記上部外壁の各々の高さが5mmから50mmの範囲である、請求項10に記載の膜用前駆体気化システム。
- 前記1つ以上の上部トレイ及び前記底部トレイの各々での前記膜用前駆体の量を示す水平位置が前記開口部の位置よりも下にあって前記内壁の高さよりも下にある、
請求項1に記載の膜用前駆体気化システム。 - 前記蓋から前記格納容器の前記外壁を通って前記格納容器の前記底部まで延在し、かつ前記環状空間と結合するガスチャネル、及び
前記蓋を介して前記格納容器の前記外壁内の前記ガスチャネルと密閉可能な状態で結合するキャリアガス供給システム、
をさらに有する、請求項1に記載の膜用前駆体気化システム。 - 少なくとも1つの抵抗加熱素子を有する前記格納容器と結合するヒーターをさらに有する膜用前駆体気化システムであって、
前記格納容器が40℃以上に温度に加熱されるように備えられている、
請求項1に記載の膜用前駆体気化システム。 - 前記底部トレイ又は前記1つ以上の上部トレイが、他の底部トレイ及び/又は1つ以上の他の上部トレイと取り換え可能である、請求項1に記載の膜用前駆体気化システム。
- 基板上に薄膜を形成する薄膜成膜システムであって:
プロセスチャンバ;及び
前記排気口が前記蒸気分配システムと結合する、請求項1に記載の膜用前駆体気化システム;
を有する成膜システム。 - 基板上に薄膜を形成する薄膜成膜システムであって:
前記基板を支持し、かつ加熱するように備えられている基板ホルダ、前記基板上に膜用前駆体を導入するように備えられている蒸気分配システム、及び排気用に備えられている排気システムを有するプロセスチャンバ;
膜用前駆体を気化し、かつ前記膜用前駆体の蒸気をキャリアガス中へ移送するように備えられている膜用前駆体気化システムであって:
ヒーターと結合することで加熱されて温度上昇する、外壁及び底部を有する格納容器;
排気口を有する、前記格納容器と密閉可能な状態で結合するように備えられている蓋;
前記格納容器の前記底部上に設けられ、かつ膜用前駆体を支持するように備えられている底部トレイであって、前記膜用前駆体を上で保持するように備えられている底部外壁を有し、該底部外壁は、前記格納容器の中心へ向かってキャリアガスが前記膜用前駆体上を流れ、かつ前記キャリアガスは膜用前駆体蒸気と共に前記蓋中の前記排出口を介して排出されるように備えられている1つ以上の開口部を有する、底部トレイ;
前記膜用前駆体を支持するように備えられた1つ以上の積層可能な上部トレイであって、当該1つ以上の積層可能な上部トレイはその直前に積層された上部トレイの上又は前記底部トレイに積層されるように備えられ、当該1つ以上の積層可能な上部トレイのそれぞれは上部外壁及び該上部外壁よりも短い上部内壁を有し、前記上部外壁と前記上部内壁はそれらの間に存在する前記膜用前駆体を保持するように備えられ、前記上部外壁は1つ以上の上部トレイ開口部を有し、該1つ以上の上部トレイ開口部は前記キャリアガスが前記膜用前駆体上を通って前記格納容器の中心へ向かって流れかつ前記蓋中に設けられている前記排気口を通って膜用前駆体蒸気と共に前記キャリアガスを排出するように備えられている、1つ以上の積層可能な上部トレイ;
を有し、
前記底部トレイと前記1つ以上の積層可能な上部トレイとが共同してトレイ積層体を画定し、環状空間は前記底部トレイの前記底部外壁及び前記1つ以上の積層可能な上部トレイの前記上部外壁と前記格納容器の前記外壁との間で画定される、
膜用前駆体気化システム;
前記トレイ積層体へ前記キャリアガスを供する前記環状空間と結合するキャリアガス供給システム;及び
前記膜用前駆体気化システムの前記排気口と密閉可能な状態で結合する第1端部、及び、前記プロセスチャンバの前記蒸気分配システムの吸気口と密閉可能な状態で結合する第2端部を有する蒸気供給システム;
を有する成膜システム。 - 前記膜用前駆体が固相前駆体である、請求項19に記載の成膜システム。
- 前記膜用前駆体が、W(CO)6、Mo(CO)6、Co2(CO)6、Rh4(CO)12、Re2(CO)10、Cr(CO)6、Ru3(CO)12、又はOs3(CO)12から選ばれる固相金属カルボニルを有する、請求項19に記載の成膜システム。
- 前記キャリアガスが、希ガス、一酸化物ガス、及び一酸化炭素(CO)を有する、請求項21に記載の成膜システム。
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US10/998,420 US7638002B2 (en) | 2004-11-29 | 2004-11-29 | Multi-tray film precursor evaporation system and thin film deposition system incorporating same |
US10/998,420 | 2004-11-29 | ||
PCT/US2005/043018 WO2006058310A1 (en) | 2004-11-29 | 2005-11-29 | Multi-tray film precursor evaporation system and thin film deposition system incorporating same |
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JP2009526134A (ja) * | 2006-02-10 | 2009-07-16 | 東京エレクトロン株式会社 | 膜前駆体蒸発システムおよびそれを用いる方法 |
JP2009530494A (ja) * | 2006-03-16 | 2009-08-27 | 東京エレクトロン株式会社 | 成膜システム内の粒子コンタミネーションを抑制する方法および機器 |
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US20070032079A1 (en) | 2007-02-08 |
CN101065515B (zh) | 2010-05-26 |
CN101065516A (zh) | 2007-10-31 |
US7638002B2 (en) | 2009-12-29 |
CN101065516B (zh) | 2010-12-01 |
TWI300956B (en) | 2008-09-11 |
ATE510043T1 (de) | 2011-06-15 |
WO2006058310A1 (en) | 2006-06-01 |
US7459396B2 (en) | 2008-12-02 |
EP1863950A1 (en) | 2007-12-12 |
KR20070089785A (ko) | 2007-09-03 |
CN101065515A (zh) | 2007-10-31 |
TW200629376A (en) | 2006-08-16 |
US20060112882A1 (en) | 2006-06-01 |
EP1863950B1 (en) | 2011-05-18 |
JP2008522033A (ja) | 2008-06-26 |
KR101194888B1 (ko) | 2012-10-25 |
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