WO2008111398A1 - 蒸着装置の制御装置および蒸着装置の制御方法 - Google Patents

蒸着装置の制御装置および蒸着装置の制御方法 Download PDF

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Publication number
WO2008111398A1
WO2008111398A1 PCT/JP2008/053401 JP2008053401W WO2008111398A1 WO 2008111398 A1 WO2008111398 A1 WO 2008111398A1 JP 2008053401 W JP2008053401 W JP 2008053401W WO 2008111398 A1 WO2008111398 A1 WO 2008111398A1
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WO
WIPO (PCT)
Prior art keywords
film forming
carrier gas
speed
storage section
forming speed
Prior art date
Application number
PCT/JP2008/053401
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English (en)
French (fr)
Inventor
Hiroyuki Ikuta
Noriaki Fukiage
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to KR1020097020606A priority Critical patent/KR101123706B1/ko
Priority to CN2008800070350A priority patent/CN101622373B/zh
Priority to JP2009503961A priority patent/JP5190446B2/ja
Priority to US12/530,028 priority patent/US20100086681A1/en
Priority to DE112008000604T priority patent/DE112008000604T5/de
Publication of WO2008111398A1 publication Critical patent/WO2008111398A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/246—Replenishment of source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

【課題】成膜速度を精度良く制御する。 【解決手段】蒸着源１１０にて気化された成膜材料により基板Ｇを成膜処理する蒸着装置１００の制御装置７００であって、制御装置７００の記憶部７１０は、成膜速度とキャリアガスの流量との関係を示した複数のテーブルを記憶する。テーブル選択部７５０は、プロセス条件に基づき、記憶部７１０に記憶された複数のテーブルから、所望のテーブルを選択する。成膜コントローラ２００は、成膜材料の気化速度を検出するためのＱＣＭ１８０から出力された信号に基づき、基板Ｇへの成膜速度を求める。キャリアガス調整部７６０は、記憶部７１０に記憶されたテーブルに示された成膜速度とキャリアガスの流量との関係を示すデータを用いて、成膜コントローラ２００により求められた成膜速度と目標とする成膜速度との偏差に応じて所望の成膜速度を得るためにキャリアガスの流量を調整する。
PCT/JP2008/053401 2007-03-06 2008-02-27 蒸着装置の制御装置および蒸着装置の制御方法 WO2008111398A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020097020606A KR101123706B1 (ko) 2007-03-06 2008-02-27 증착 장치의 제어 장치 및 증착 장치의 제어 방법
CN2008800070350A CN101622373B (zh) 2007-03-06 2008-02-27 蒸镀装置的控制装置及蒸镀装置的控制方法
JP2009503961A JP5190446B2 (ja) 2007-03-06 2008-02-27 蒸着装置および蒸着装置の制御方法
US12/530,028 US20100086681A1 (en) 2007-03-06 2008-02-27 Control device of evaporating apparatus and control method of evaporating apparatus
DE112008000604T DE112008000604T5 (de) 2007-03-06 2008-02-27 Steuereinrichtung einer Bedampfungsvorrichtung und Steuerverfahren einer Bedampfungsvorrichtung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007055774 2007-03-06
JP2007-055774 2007-03-06

Publications (1)

Publication Number Publication Date
WO2008111398A1 true WO2008111398A1 (ja) 2008-09-18

Family

ID=39759340

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/053401 WO2008111398A1 (ja) 2007-03-06 2008-02-27 蒸着装置の制御装置および蒸着装置の制御方法

Country Status (7)

Country Link
US (1) US20100086681A1 (ja)
JP (1) JP5190446B2 (ja)
KR (1) KR101123706B1 (ja)
CN (2) CN102719794A (ja)
DE (1) DE112008000604T5 (ja)
TW (1) TW200902735A (ja)
WO (1) WO2008111398A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
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JP2011122187A (ja) * 2009-12-08 2011-06-23 Ulvac Japan Ltd 材料蒸発システム及びその成膜装置
US20110183069A1 (en) * 2008-09-30 2011-07-28 Tokyo Electron Limited Deposition apparatus, deposition method, and storage medium having program stored therein
JP2016507644A (ja) * 2012-12-20 2016-03-10 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 蒸発器、堆積アレンジメント、堆積装置及びこれらを操作する方法

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KR101094307B1 (ko) * 2010-02-02 2011-12-19 삼성모바일디스플레이주식회사 표시 장치를 제조하기 위한 장치 및 방법
KR101107170B1 (ko) 2010-05-04 2012-01-25 삼성모바일디스플레이주식회사 스퍼터링 시스템 및 스퍼터링 방법
TW201209219A (en) * 2010-08-16 2012-03-01 Hon Hai Prec Ind Co Ltd Coating apparatus and coating method
CN104053811B (zh) * 2011-11-18 2017-04-12 第一太阳能有限公司 用于材料共沉积的气相传输沉积方法及系统
JP5840055B2 (ja) * 2012-03-29 2016-01-06 日立造船株式会社 蒸着装置
KR20140061808A (ko) * 2012-11-14 2014-05-22 삼성디스플레이 주식회사 유기물 증착 장치
DE102014102484A1 (de) * 2014-02-26 2015-08-27 Aixtron Se Verwendung eines QCM-Sensors zur Bestimmung der Dampfkonzentration beim OVPD-Verfahren beziehungsweise in einem OVPD-Beschichtungssystem
CN103924223B (zh) * 2014-04-28 2016-05-25 北京七星华创电子股份有限公司 应用于cvd成膜工艺的膜厚流量建模方法及膜厚调节方法
KR200479745Y1 (ko) 2015-03-09 2016-03-03 지진영 기화기 흐름 측정 시스템
CN107709604A (zh) * 2015-06-17 2018-02-16 应用材料公司 用于测量沉积速率的方法及沉积速率控制系统
CN107058973A (zh) * 2017-03-10 2017-08-18 常州大学 大面积钙钛矿薄膜的制备设备
US11335575B2 (en) 2017-08-25 2022-05-17 Inficon, Inc. Unconsumed precursor monitoring
CN112410764A (zh) * 2019-08-23 2021-02-26 长鑫存储技术有限公司 气相沉积装置、调整方法、装置、系统、介质和电子设备
CN114921758B (zh) * 2022-06-30 2023-07-28 华能新能源股份有限公司 一种蒸发镀膜方法以及蒸发镀膜设备

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Publication number Priority date Publication date Assignee Title
US20110183069A1 (en) * 2008-09-30 2011-07-28 Tokyo Electron Limited Deposition apparatus, deposition method, and storage medium having program stored therein
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Also Published As

Publication number Publication date
CN101622373A (zh) 2010-01-06
JP5190446B2 (ja) 2013-04-24
US20100086681A1 (en) 2010-04-08
CN102719794A (zh) 2012-10-10
TW200902735A (en) 2009-01-16
CN101622373B (zh) 2012-07-18
DE112008000604T5 (de) 2010-01-28
JPWO2008111398A1 (ja) 2010-06-24
KR101123706B1 (ko) 2012-03-20
KR20090116823A (ko) 2009-11-11

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