ATE492070T1 - Piezoelektrischer dünnfilmresonator und verfahren zu seiner herstellung - Google Patents

Piezoelektrischer dünnfilmresonator und verfahren zu seiner herstellung

Info

Publication number
ATE492070T1
ATE492070T1 AT06717125T AT06717125T ATE492070T1 AT E492070 T1 ATE492070 T1 AT E492070T1 AT 06717125 T AT06717125 T AT 06717125T AT 06717125 T AT06717125 T AT 06717125T AT E492070 T1 ATE492070 T1 AT E492070T1
Authority
AT
Austria
Prior art keywords
substrate
surface normal
target
polycrystalline film
metal atoms
Prior art date
Application number
AT06717125T
Other languages
English (en)
Inventor
Ilia Katardjiev
Gunilla Wingqvist
Johan Bjurstroem
Original Assignee
Radi Medical Systems
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radi Medical Systems filed Critical Radi Medical Systems
Application granted granted Critical
Publication of ATE492070T1 publication Critical patent/ATE492070T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0617—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Physical Vapour Deposition (AREA)
  • Measuring Fluid Pressure (AREA)
AT06717125T 2005-03-23 2006-03-23 Piezoelektrischer dünnfilmresonator und verfahren zu seiner herstellung ATE492070T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE0500647A SE0500647L (sv) 2005-03-23 2005-03-23 Production of polycrystalline films for shear mode piezoelectric thin film resonators
PCT/SE2006/050041 WO2006101450A1 (en) 2005-03-23 2006-03-23 Piezoelectric thin film resonator

Publications (1)

Publication Number Publication Date
ATE492070T1 true ATE492070T1 (de) 2011-01-15

Family

ID=37024049

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06717125T ATE492070T1 (de) 2005-03-23 2006-03-23 Piezoelektrischer dünnfilmresonator und verfahren zu seiner herstellung

Country Status (7)

Country Link
US (1) US20080197750A1 (de)
EP (1) EP1861924B8 (de)
AT (1) ATE492070T1 (de)
DE (1) DE602006018880D1 (de)
ES (1) ES2357779T3 (de)
SE (1) SE0500647L (de)
WO (1) WO2006101450A1 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8203255B2 (en) 2006-12-07 2012-06-19 Albert-Ludwigs-Universitat Freiburg Piezoelectric sensor arrangement comprising a thin layer shear wave resonator based on epitactically grown piezoelectric layers
US20090053401A1 (en) * 2007-08-24 2009-02-26 Maxim Integrated Products, Inc. Piezoelectric deposition for BAW resonators
US8512800B2 (en) 2007-12-04 2013-08-20 Triquint Semiconductor, Inc. Optimal acoustic impedance materials for polished substrate coating to suppress passband ripple in BAW resonators and filters
US7768364B2 (en) 2008-06-09 2010-08-03 Maxim Integrated Products, Inc. Bulk acoustic resonators with multi-layer electrodes
US8478384B2 (en) 2010-01-19 2013-07-02 Lightlab Imaging, Inc. Intravascular optical coherence tomography system with pressure monitoring interface and accessories
JP5814860B2 (ja) 2011-05-31 2015-11-17 ライトラボ・イメージング・インコーポレーテッド 多モード撮像システム、装置、および方法
DE112012007295B3 (de) 2011-06-08 2022-02-03 Semiconductor Energy Laboratory Co., Ltd. Verfahren zum Herstellen eines Sputtertargets und Verfahren zum Herstellen einer Halbleitervorrichtung
WO2013019840A1 (en) 2011-08-03 2013-02-07 Lightlab Imaging, Inc. Systems, methods and apparatus for determining a fractional flow reserve
DE102012211314A1 (de) * 2012-06-29 2014-02-20 Siemens Aktiengesellschaft Verfahren zum Herstellen eines polykristallinen Keramikfilms
US9885108B2 (en) 2012-08-07 2018-02-06 Semiconductor Energy Laboratory Co., Ltd. Method for forming sputtering target
JP5991529B2 (ja) * 2012-10-29 2016-09-14 三菱マテリアル株式会社 耐欠損性と耐摩耗性にすぐれた表面被覆切削工具
WO2014087799A1 (ja) * 2012-12-05 2014-06-12 株式会社村田製作所 圧電部材、弾性波装置及び圧電部材の製造方法
US9088265B2 (en) * 2013-05-17 2015-07-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator comprising a boron nitride piezoelectric layer
ES2883138T3 (es) 2014-04-04 2021-12-07 St Jude Medical Systems Ab Sistema de diagnóstico de datos de flujo y presión intravascular
KR101573652B1 (ko) * 2014-10-23 2015-12-01 성균관대학교산학협력단 산화아연 나노시트 구조물 제조방법 및 이에 의해 제조된 산화아연 나노시트 구조물을 포함하는 전자장치와 터치센서장치
WO2016089703A1 (en) * 2014-12-01 2016-06-09 Modoc Technologies, Llc Sensors, systems and metheods for detecting analytes using same
WO2017066449A1 (en) * 2015-10-14 2017-04-20 Qorvo Us, Inc. Multi-stage deposition system for growth of inclined c-axis piezoelectric material structures
WO2017106489A2 (en) 2015-12-15 2017-06-22 Qorvo Us, Inc. Temperature compensation and operational configuration for bulk acoustic wave resonator devices
US11824511B2 (en) * 2018-03-21 2023-11-21 Qorvo Us, Inc. Method for manufacturing piezoelectric bulk layers with tilted c-axis orientation
US11381212B2 (en) 2018-03-21 2022-07-05 Qorvo Us, Inc. Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same
EP3871278A1 (de) * 2018-10-26 2021-09-01 Evatec AG Abscheidungsverfahren für piezoelektrische beschichtungen
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
US11401601B2 (en) 2019-09-13 2022-08-02 Qorvo Us, Inc. Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same
CN116033971B (zh) * 2020-08-13 2024-02-27 株式会社村田制作所 膜的制造方法和导电性膜
KR102644504B1 (ko) * 2022-03-28 2024-03-08 계명대학교 산학협력단 박막센서를 포함하는 산소원자 발생시스템

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3558351A (en) * 1968-12-19 1971-01-26 Bell Telephone Labor Inc Thin semiconductor films
US4719383A (en) * 1985-05-20 1988-01-12 The United States Of America As Represented By The United States Department Of Energy Piezoelectric shear wave resonator and method of making same

Also Published As

Publication number Publication date
DE602006018880D1 (de) 2011-01-27
EP1861924B1 (de) 2010-12-15
WO2006101450A1 (en) 2006-09-28
SE0500647L (sv) 2006-09-24
US20080197750A1 (en) 2008-08-21
EP1861924B8 (de) 2011-01-26
ES2357779T3 (es) 2011-04-29
EP1861924A1 (de) 2007-12-05

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