WO2010149790A3 - Verfahren zur beschichtung eines subtrates in einer vakuumkammer mit einem rotierenden magnetron - Google Patents

Verfahren zur beschichtung eines subtrates in einer vakuumkammer mit einem rotierenden magnetron Download PDF

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Publication number
WO2010149790A3
WO2010149790A3 PCT/EP2010/059143 EP2010059143W WO2010149790A3 WO 2010149790 A3 WO2010149790 A3 WO 2010149790A3 EP 2010059143 W EP2010059143 W EP 2010059143W WO 2010149790 A3 WO2010149790 A3 WO 2010149790A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
vacuum chamber
magnetron
coating
rotating magnetron
Prior art date
Application number
PCT/EP2010/059143
Other languages
English (en)
French (fr)
Other versions
WO2010149790A2 (de
Inventor
Volker Linss
Tilo Wuensche
Original Assignee
Von Ardenne Anlagentechnik Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Von Ardenne Anlagentechnik Gmbh filed Critical Von Ardenne Anlagentechnik Gmbh
Priority to JP2012516775A priority Critical patent/JP5599459B2/ja
Priority to KR1020127002137A priority patent/KR101465947B1/ko
Priority to US13/377,738 priority patent/US8992742B2/en
Publication of WO2010149790A2 publication Critical patent/WO2010149790A2/de
Publication of WO2010149790A3 publication Critical patent/WO2010149790A3/de

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Der Erfindung, die ein Verfahren zur Beschichtung eines Subtrates in einer Vakuumkammer mit einem rotierenden Magnetron betrifft, wobei ein Substrat in einer Substrattransportrichtung an dem Magnetron vorbei geführt und mittels eines aus einem mit dem Magnetron verbundenen Target herausgelösten Materials gegebenenfalls auch unter einer einer Reaktion des Materiales mit einem in der Vakuumkammer befindlichen Reaktivgases beschichtet wird, liegt die Aufgabe zugrunde, die Homogenität der Schicht auf einem Substrat durch eine Stabilisierung des Arbeitspunktes über die Targetrotation zu verbessern. Dies wird dadurch gelöst, dass eine durch den Targetumlauf hervorgerufene periodische Änderung eines ersten Prozessparameters durch eine periodische Änderung eines zweiten Prozessparameters mit einer determinierten Höhe ausgeregelt wird und/oder dass zwei Magnetron mit unterschiedlichen Drehzahlen vorgesehen werden.
PCT/EP2010/059143 2009-06-26 2010-06-28 Verfahren zur beschichtung eines subtrates in einer vakuumkammer mit einem rotierenden magnetron WO2010149790A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012516775A JP5599459B2 (ja) 2009-06-26 2010-06-28 真空室内で回転するマグネトロンを用いた基板の成膜方法
KR1020127002137A KR101465947B1 (ko) 2009-06-26 2010-06-28 회전식 마그네트론을 가진 진공 챔버에서 기판을 코팅하는 방법
US13/377,738 US8992742B2 (en) 2009-06-26 2010-06-28 Method for coating a substrate in a vacuum chamber having a rotating magnetron

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
DE102009030815 2009-06-26
DE102009030815.6 2009-06-26
DE102009050412 2009-10-22
DE102009050412.5 2009-10-22
DE102009053756.2 2009-11-20
DE102009053756A DE102009053756B4 (de) 2009-06-26 2009-11-20 Verfahren zur Beschichtung eines Substrates in einer Vakuumkammer mit mindestens einem rotierenden Magnetron

Publications (2)

Publication Number Publication Date
WO2010149790A2 WO2010149790A2 (de) 2010-12-29
WO2010149790A3 true WO2010149790A3 (de) 2011-03-03

Family

ID=43218018

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/059143 WO2010149790A2 (de) 2009-06-26 2010-06-28 Verfahren zur beschichtung eines subtrates in einer vakuumkammer mit einem rotierenden magnetron

Country Status (5)

Country Link
US (1) US8992742B2 (de)
JP (1) JP5599459B2 (de)
KR (1) KR101465947B1 (de)
DE (2) DE102009061065A1 (de)
WO (1) WO2010149790A2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011017583B4 (de) * 2011-01-27 2016-09-08 Von Ardenne Gmbh Verfahren zur Ermittlung prozesssignifikanter Daten eines Vakuumabscheideprozesses und deren Weiterverarbeitung in Mess- oder Regelungsprozessen
EP2484796A1 (de) * 2011-02-04 2012-08-08 Pivot a.s. Magnetron-Sputterverfahren
EP2785892B1 (de) 2011-11-30 2017-09-27 Applied Materials, Inc. Geschlossener regelkreis
DE102012106403B4 (de) 2012-07-17 2019-03-28 VON ARDENNE Asset GmbH & Co. KG Verfahren zum reaktiven Magnetronsputtern zur Beschichtung von Substraten
JP2016204705A (ja) 2015-04-22 2016-12-08 キヤノントッキ株式会社 成膜装置及び成膜方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020046943A1 (en) * 2000-10-23 2002-04-25 Hiroshi Echizen Sputtering method for forming film and apparatus therefor
US6537428B1 (en) * 1999-09-02 2003-03-25 Veeco Instruments, Inc. Stable high rate reactive sputtering
WO2003081634A2 (de) * 2002-03-22 2003-10-02 Von Ardenne Anlagentechnik Gmbh Rohrmagnetron

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DE3821207A1 (de) * 1988-06-23 1989-12-28 Leybold Ag Anordnung zum beschichten eines substrats mit dielektrika
US5108569A (en) * 1989-11-30 1992-04-28 Applied Materials, Inc. Process and apparatus for forming stoichiometric layer of a metal compound by closed loop voltage controlled reactive sputtering
WO1992001081A1 (en) 1990-07-06 1992-01-23 The Boc Group, Inc. Method and apparatus for co-sputtering and cross-sputtering homogeneous films
ES2093133T3 (es) * 1991-04-12 1996-12-16 Balzers Hochvakuum Procedimiento e instalacion para el recubrimiento de al menos un objeto.
US5942089A (en) * 1996-04-22 1999-08-24 Northwestern University Method for sputtering compounds on a substrate
JPH10509773A (ja) * 1995-04-25 1998-09-22 ザ ビーオーシー グループ インコーポレイテッド 基板上に誘電体層を形成するためのスパッタリング装置及び方法
US6106676A (en) * 1998-04-16 2000-08-22 The Boc Group, Inc. Method and apparatus for reactive sputtering employing two control loops
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Publication number Priority date Publication date Assignee Title
US6537428B1 (en) * 1999-09-02 2003-03-25 Veeco Instruments, Inc. Stable high rate reactive sputtering
US20020046943A1 (en) * 2000-10-23 2002-04-25 Hiroshi Echizen Sputtering method for forming film and apparatus therefor
WO2003081634A2 (de) * 2002-03-22 2003-10-02 Von Ardenne Anlagentechnik Gmbh Rohrmagnetron

Non-Patent Citations (1)

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Also Published As

Publication number Publication date
JP5599459B2 (ja) 2014-10-01
JP2012530851A (ja) 2012-12-06
KR101465947B1 (ko) 2014-11-27
US20120132517A1 (en) 2012-05-31
KR20120093816A (ko) 2012-08-23
US8992742B2 (en) 2015-03-31
WO2010149790A2 (de) 2010-12-29
DE102009053756B4 (de) 2011-07-21
DE102009053756A1 (de) 2010-12-30
DE102009061065A1 (de) 2011-09-29

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