WO2008126811A1 - マグネトロンスパッタ装置 - Google Patents
マグネトロンスパッタ装置 Download PDFInfo
- Publication number
- WO2008126811A1 WO2008126811A1 PCT/JP2008/056819 JP2008056819W WO2008126811A1 WO 2008126811 A1 WO2008126811 A1 WO 2008126811A1 JP 2008056819 W JP2008056819 W JP 2008056819W WO 2008126811 A1 WO2008126811 A1 WO 2008126811A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- target
- magnetron sputtering
- sputtering apparatus
- processed
- substrate
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008800111098A CN101652499B (zh) | 2007-04-06 | 2008-04-04 | 磁控溅射装置 |
JP2009509333A JP5283084B2 (ja) | 2007-04-06 | 2008-04-04 | マグネトロンスパッタ装置 |
US12/594,676 US8568577B2 (en) | 2007-04-06 | 2008-04-04 | Magnetron sputtering apparatus |
DE112008000912T DE112008000912T5 (de) | 2007-04-06 | 2008-04-04 | Magnetronsputtervorrichtung |
KR1020097022976A KR101136477B1 (ko) | 2007-04-06 | 2008-04-04 | 마그네트론 스퍼터링 장치 |
US14/036,183 US20140027278A1 (en) | 2007-04-06 | 2013-09-25 | Magnetron sputtering apparatus |
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007101159 | 2007-04-06 | ||
JP2007-101159 | 2007-04-06 | ||
JP2008053981 | 2008-03-04 | ||
JP2008052891 | 2008-03-04 | ||
JP2008-052934 | 2008-03-04 | ||
JP2008-053981 | 2008-03-04 | ||
JP2008052934 | 2008-03-04 | ||
JP2008-052891 | 2008-03-04 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/594,676 A-371-Of-International US8568577B2 (en) | 2007-04-06 | 2008-04-04 | Magnetron sputtering apparatus |
US14/036,183 Division US20140027278A1 (en) | 2007-04-06 | 2013-09-25 | Magnetron sputtering apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008126811A1 true WO2008126811A1 (ja) | 2008-10-23 |
Family
ID=39863909
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/056819 WO2008126811A1 (ja) | 2007-04-06 | 2008-04-04 | マグネトロンスパッタ装置 |
Country Status (7)
Country | Link |
---|---|
US (2) | US8568577B2 (ja) |
JP (1) | JP5283084B2 (ja) |
KR (1) | KR101136477B1 (ja) |
CN (1) | CN101652499B (ja) |
DE (1) | DE112008000912T5 (ja) |
TW (1) | TWI438293B (ja) |
WO (1) | WO2008126811A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010131521A1 (ja) * | 2009-05-15 | 2010-11-18 | 国立大学法人東北大学 | 回転マグネットスパッタ装置 |
JP2013122080A (ja) * | 2011-12-12 | 2013-06-20 | Ulvac Japan Ltd | スパッタリング装置 |
JP2017226905A (ja) * | 2016-06-24 | 2017-12-28 | 株式会社トヨタプロダクションエンジニアリング | 摩耗予測装置、摩耗予測方法、摩耗予測プログラム |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9812302B2 (en) * | 2007-03-16 | 2017-11-07 | National University Corporation Tohoku University | Magnetron sputtering apparatus |
KR101275672B1 (ko) * | 2011-03-15 | 2013-06-17 | (주)울텍 | 스퍼터링 마그네트론 |
DE102011086111B4 (de) | 2011-11-10 | 2016-03-17 | Fhr Anlagenbau Gmbh | Anordnung zur Einspeisung von HF-Strom für Rohrkathoden |
US20150235817A1 (en) * | 2012-10-26 | 2015-08-20 | Tohoku University | Magnetron sputtering apparatus and magnetron sputtering method |
US9257265B2 (en) * | 2013-03-15 | 2016-02-09 | Applied Materials, Inc. | Methods for reducing etch nonuniformity in the presence of a weak magnetic field in an inductively coupled plasma reactor |
CN104563965A (zh) * | 2015-01-12 | 2015-04-29 | 中国科学院大学 | 磁场产生装置 |
US20170062192A1 (en) * | 2015-08-28 | 2017-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Film forming apparatus |
CN106392072B (zh) * | 2016-10-20 | 2020-04-10 | 中国人民解放军装甲兵工程学院 | 磁控激光熔覆成形设备与方法 |
JP7097172B2 (ja) * | 2017-11-21 | 2022-07-07 | キヤノントッキ株式会社 | スパッタリング装置 |
DE102018213534A1 (de) * | 2018-08-10 | 2020-02-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung und Verfahren zur Herstellung von Schichten mit verbesserter Uniformität bei Beschichtungsanlagen mit horizontal rotierender Substratführung |
CN113755808A (zh) * | 2021-09-28 | 2021-12-07 | 北海惠科半导体科技有限公司 | 磁控溅射装置及其控制方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60204882A (ja) * | 1984-03-28 | 1985-10-16 | Anelva Corp | 放電反応処理装置 |
JPH05148642A (ja) * | 1991-11-28 | 1993-06-15 | Hitachi Ltd | マグネトロンスパツタ装置 |
JPH05209267A (ja) * | 1991-08-27 | 1993-08-20 | Leybold Ag | 円環状被着膜面を成膜するためのマグネトロン原理に基づくスパッタリングカソードユニット |
JP2001032067A (ja) * | 1999-07-22 | 2001-02-06 | Sanyo Shinku Kogyo Kk | 成膜用磁石とそれを用いた成膜方法及びその装置 |
JP2001523770A (ja) * | 1997-11-19 | 2001-11-27 | シンバコ・ナムローゼ・フエンノートシャップ | 移動磁石アセンブリを有する平面マグネトロン |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0046154B1 (en) * | 1980-08-08 | 1984-11-28 | Battelle Development Corporation | Apparatus for coating substrates by high-rate cathodic sputtering, as well as sputtering cathode for such apparatus |
US5399253A (en) * | 1992-12-23 | 1995-03-21 | Balzers Aktiengesellschaft | Plasma generating device |
CN1067118C (zh) * | 1994-07-08 | 2001-06-13 | 松下电器产业株式会社 | 磁控管溅射装置 |
KR100262768B1 (ko) | 1996-04-24 | 2000-08-01 | 니시히라 순지 | 스퍼터성막장치 |
JP3803520B2 (ja) | 1999-02-22 | 2006-08-02 | 忠弘 大見 | マグネット回転スパッタ装置 |
JP2002069634A (ja) | 2000-08-29 | 2002-03-08 | Canon Inc | 薄膜作製方法および薄膜作製装置 |
US20030029715A1 (en) * | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
CN2609940Y (zh) * | 2002-09-18 | 2004-04-07 | 衡阳市真空机电设备有限公司 | 新型磁场旋转外圆柱靶 |
US6896773B2 (en) * | 2002-11-14 | 2005-05-24 | Zond, Inc. | High deposition rate sputtering |
US7244344B2 (en) * | 2005-02-03 | 2007-07-17 | Applied Materials, Inc. | Physical vapor deposition plasma reactor with VHF source power applied through the workpiece |
JP2007101159A (ja) | 2005-10-07 | 2007-04-19 | Denso Corp | エジェクタ式冷凍サイクル |
CN101283114B (zh) * | 2005-10-07 | 2012-04-18 | 国立大学法人东北大学 | 磁控溅射装置 |
ATE553495T1 (de) * | 2005-12-13 | 2012-04-15 | Oerlikon Solar Ag | Verbesserte sputter-target-nutzung |
WO2007071719A1 (en) * | 2005-12-22 | 2007-06-28 | Oc Oerlikon Balzers Ag | Method of manufacturing at least one sputter-coated substrate and sputter source |
JP4707151B2 (ja) | 2006-07-25 | 2011-06-22 | 日立マクセル株式会社 | テープカートリッジ |
JP2008052934A (ja) | 2006-08-22 | 2008-03-06 | Hitachi High-Technologies Corp | 検査装置および検査方法 |
JP4742316B2 (ja) | 2006-08-24 | 2011-08-10 | カシオ計算機株式会社 | 撮像装置、撮像方法及び撮像制御プログラム |
US9812302B2 (en) * | 2007-03-16 | 2017-11-07 | National University Corporation Tohoku University | Magnetron sputtering apparatus |
JP5147083B2 (ja) * | 2007-03-30 | 2013-02-20 | 国立大学法人東北大学 | 回転マグネットスパッタ装置 |
US8535494B2 (en) * | 2008-03-04 | 2013-09-17 | National University Corporation Tohoku University | Rotary magnet sputtering apparatus |
KR20120008528A (ko) * | 2009-05-15 | 2012-01-30 | 고쿠리츠다이가쿠호진 도호쿠다이가쿠 | 회전 마그넷 스퍼터 장치, 스퍼터 방법, 전자 장치의 제조 방법 및 회전 마그넷 스퍼터 장치의 냉각 방법 |
-
2008
- 2008-04-04 CN CN2008800111098A patent/CN101652499B/zh not_active Expired - Fee Related
- 2008-04-04 DE DE112008000912T patent/DE112008000912T5/de not_active Ceased
- 2008-04-04 JP JP2009509333A patent/JP5283084B2/ja not_active Expired - Fee Related
- 2008-04-04 WO PCT/JP2008/056819 patent/WO2008126811A1/ja active Application Filing
- 2008-04-04 KR KR1020097022976A patent/KR101136477B1/ko not_active IP Right Cessation
- 2008-04-04 US US12/594,676 patent/US8568577B2/en not_active Expired - Fee Related
- 2008-04-07 TW TW097112514A patent/TWI438293B/zh not_active IP Right Cessation
-
2013
- 2013-09-25 US US14/036,183 patent/US20140027278A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60204882A (ja) * | 1984-03-28 | 1985-10-16 | Anelva Corp | 放電反応処理装置 |
JPH05209267A (ja) * | 1991-08-27 | 1993-08-20 | Leybold Ag | 円環状被着膜面を成膜するためのマグネトロン原理に基づくスパッタリングカソードユニット |
JPH05148642A (ja) * | 1991-11-28 | 1993-06-15 | Hitachi Ltd | マグネトロンスパツタ装置 |
JP2001523770A (ja) * | 1997-11-19 | 2001-11-27 | シンバコ・ナムローゼ・フエンノートシャップ | 移動磁石アセンブリを有する平面マグネトロン |
JP2001032067A (ja) * | 1999-07-22 | 2001-02-06 | Sanyo Shinku Kogyo Kk | 成膜用磁石とそれを用いた成膜方法及びその装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010131521A1 (ja) * | 2009-05-15 | 2010-11-18 | 国立大学法人東北大学 | 回転マグネットスパッタ装置 |
CN102421932A (zh) * | 2009-05-15 | 2012-04-18 | 国立大学法人东北大学 | 旋转磁铁溅镀装置 |
CN102421932B (zh) * | 2009-05-15 | 2014-02-19 | 国立大学法人东北大学 | 旋转磁铁溅镀装置 |
JP2013122080A (ja) * | 2011-12-12 | 2013-06-20 | Ulvac Japan Ltd | スパッタリング装置 |
JP2017226905A (ja) * | 2016-06-24 | 2017-12-28 | 株式会社トヨタプロダクションエンジニアリング | 摩耗予測装置、摩耗予測方法、摩耗予測プログラム |
Also Published As
Publication number | Publication date |
---|---|
JP5283084B2 (ja) | 2013-09-04 |
TW200916597A (en) | 2009-04-16 |
CN101652499A (zh) | 2010-02-17 |
KR20090127948A (ko) | 2009-12-14 |
KR101136477B1 (ko) | 2012-04-23 |
US20100059368A1 (en) | 2010-03-11 |
US8568577B2 (en) | 2013-10-29 |
US20140027278A1 (en) | 2014-01-30 |
JPWO2008126811A1 (ja) | 2010-07-22 |
CN101652499B (zh) | 2013-09-25 |
DE112008000912T5 (de) | 2010-02-18 |
TWI438293B (zh) | 2014-05-21 |
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