ES2093133T3 - Procedimiento e instalacion para el recubrimiento de al menos un objeto. - Google Patents
Procedimiento e instalacion para el recubrimiento de al menos un objeto.Info
- Publication number
- ES2093133T3 ES2093133T3 ES92105963T ES92105963T ES2093133T3 ES 2093133 T3 ES2093133 T3 ES 2093133T3 ES 92105963 T ES92105963 T ES 92105963T ES 92105963 T ES92105963 T ES 92105963T ES 2093133 T3 ES2093133 T3 ES 2093133T3
- Authority
- ES
- Spain
- Prior art keywords
- direct current
- procedure
- coating
- installation
- fed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0094—Reactive sputtering in transition mode
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Fluid Mechanics (AREA)
- Physical Vapour Deposition (AREA)
- Insulating Bodies (AREA)
- Fertilizers (AREA)
Abstract
PROCEDIMIENTO E INSTALACION PARA EL RECUBRIMIENTO DE CAPAS DE AL MENOS UN OBJETO. PARA LA PRODUCCION DE CAPAS DIELECTRICAS SE PULVERIZA CON REACTIVO UN OBJETO CONDUCTOR. LA MANTENIDA DESCARGA DE EFLUVIOS SE ALIMENTA CON CORRIENTE CONTINUA Y CORRIENTE ALTERNA, SUPERPUESTA A LA CORRIENTE CONTINUA. POR MEDIO DE UN CIRCUITO DE REGULACION SE ESTABILIZA EL PUNTO DE TRABAJO DEL PROCESO EN EL POR SI INESTABLE MODO DE TRANSFERENCIA. SE CONSIGUE UN ALTO RENDIMIENTO EN EL RECUBRIMIENTO DE CAPAS CON UN ALTO GRADO DE REACCION DE LA CAPA APLICADA.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH109591 | 1991-04-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2093133T3 true ES2093133T3 (es) | 1996-12-16 |
Family
ID=4202358
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES92105963T Expired - Lifetime ES2093133T3 (es) | 1991-04-12 | 1992-04-07 | Procedimiento e instalacion para el recubrimiento de al menos un objeto. |
Country Status (6)
Country | Link |
---|---|
US (2) | US5292417A (es) |
EP (1) | EP0508359B1 (es) |
JP (1) | JP3417575B2 (es) |
AT (1) | ATE144004T1 (es) |
DE (1) | DE59207306D1 (es) |
ES (1) | ES2093133T3 (es) |
Families Citing this family (76)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69303853T2 (de) * | 1992-04-27 | 1996-12-12 | Central Glass Co Ltd | Verfahren zur Bildung einer Dünnschicht auf einem Substrat mittels reaktiven Gleichstrom-Sputtern |
CH686253A5 (de) * | 1992-08-28 | 1996-02-15 | Balzers Hochvakuum | Verfahren zur Regelung des Reaktionsgrades sowie Beschichtungsanlage. |
EP0600303B1 (en) * | 1992-12-01 | 2002-02-06 | Matsushita Electric Industrial Co., Ltd. | Method for fabrication of dielectric thin film |
FR2699934B1 (fr) * | 1992-12-30 | 1995-03-17 | Lorraine Inst Nat Polytech | Procédé de contrôle de la concentration en métalloïde d'un dépôt réalisés par voie physique en phase vapeur réactive à l'aide d'un plasma froid de pulvérisation. |
CH686747A5 (de) * | 1993-04-01 | 1996-06-14 | Balzers Hochvakuum | Optisches Schichtmaterial. |
US5780803A (en) * | 1993-02-16 | 1998-07-14 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Process for the stabilization of plasma generation by means of electron beam vaporizer |
JPH0715051A (ja) * | 1993-06-24 | 1995-01-17 | Mitsubishi Electric Corp | Ybco超電導薄膜の製造方法 |
GB9317170D0 (en) * | 1993-08-18 | 1993-10-06 | Applied Vision Ltd | Improvements in physical vapour deposition apparatus |
JP2642849B2 (ja) * | 1993-08-24 | 1997-08-20 | 株式会社フロンテック | 薄膜の製造方法および製造装置 |
EP0657562B1 (en) | 1993-11-12 | 2001-09-12 | PPG Industries Ohio, Inc. | Durable sputtered metal oxide coating |
JP3419899B2 (ja) * | 1994-07-26 | 2003-06-23 | 東京エレクトロン株式会社 | スパッタリング方法及びスパッタリング装置 |
US5693197A (en) * | 1994-10-06 | 1997-12-02 | Hmt Technology Corporation | DC magnetron sputtering method and apparatus |
US6346176B1 (en) * | 1995-01-27 | 2002-02-12 | Gentex Optics, Inc. | Method of depositing thin films |
US5918147A (en) * | 1995-03-29 | 1999-06-29 | Motorola, Inc. | Process for forming a semiconductor device with an antireflective layer |
DE29505497U1 (de) * | 1995-03-31 | 1995-06-08 | Balzers Hochvakuum GmbH, 65205 Wiesbaden | Beschichtungsstation |
US6468401B1 (en) * | 1995-04-24 | 2002-10-22 | Bridgestone Corporation | Formation of metal compound thin film and preparation of rubber composite material |
US5849162A (en) * | 1995-04-25 | 1998-12-15 | Deposition Sciences, Inc. | Sputtering device and method for reactive for reactive sputtering |
US6893543B1 (en) * | 1995-09-01 | 2005-05-17 | Unaxis Balzers Ag | Information carrier and method for producing the same |
US5672054A (en) * | 1995-12-07 | 1997-09-30 | Carrier Corporation | Rotary compressor with reduced lubrication sensitivity |
GB2308133B (en) * | 1995-12-13 | 2000-06-21 | Kennametal Inc | Cutting tool for machining titanium and titanium alloys |
DE19605314C2 (de) * | 1996-02-14 | 2002-01-31 | Fraunhofer Ges Forschung | Verfahren zum Bearbeiten von Substraten in einem bipolaren Niederdruck-Glimmprozeß |
DE19605932A1 (de) * | 1996-02-17 | 1997-08-21 | Leybold Systems Gmbh | Verfahren zum Ablagern einer optisch transparenten und elektrisch leitenden Schicht auf einem Substrat aus durchscheinendem Werkstoff |
AU2074097A (en) * | 1996-03-04 | 1997-09-22 | Polar Materials, Inc. | Method for bulk coating using a plasma process |
DE19609970A1 (de) * | 1996-03-14 | 1997-09-18 | Leybold Systems Gmbh | Vorrichtung zum Aufbringen dünner Schichten auf ein Substrat |
DE19610012B4 (de) * | 1996-03-14 | 2005-02-10 | Unaxis Deutschland Holding Gmbh | Verfahren zur Stabilisierung eines Arbeitspunkts beim reaktiven Zerstäuben in einer Sauerstoff enthaltenden Atmosphäre |
US5667645A (en) * | 1996-06-28 | 1997-09-16 | Micron Technology, Inc. | Method of sputter deposition |
DE19643841A1 (de) * | 1996-10-30 | 1998-05-07 | Balzers Prozess Systeme Gmbh | Vorrichtung zum Beschichten von Substraten, insbesondere mit magnetisierbaren Werkstoffen |
US5984593A (en) * | 1997-03-12 | 1999-11-16 | Kennametal Inc. | Cutting insert for milling titanium and titanium alloys |
US6217720B1 (en) * | 1997-06-03 | 2001-04-17 | National Research Council Of Canada | Multi-layer reactive sputtering method with reduced stabilization time |
JP4120974B2 (ja) * | 1997-06-17 | 2008-07-16 | キヤノンアネルバ株式会社 | 薄膜作製方法および薄膜作製装置 |
DE59702419D1 (de) * | 1997-07-15 | 2000-11-09 | Unaxis Trading Ag Truebbach | Verfahren und Vorrichtung zur Sputterbeschichtung |
JP2002500087A (ja) * | 1997-12-23 | 2002-01-08 | ユナキス・バルツェルス・アクチェンゲゼルシャフト | 真空処理装置 |
US6090246A (en) * | 1998-01-20 | 2000-07-18 | Micron Technology, Inc. | Methods and apparatus for detecting reflected neutrals in a sputtering process |
CH693076A5 (de) | 1998-02-20 | 2003-02-14 | Unaxis Trading Ag | Verfahren zur Herstellung einer Farbfilterschichtsystem-Struktur auf einer Unterlage. |
US6106676A (en) * | 1998-04-16 | 2000-08-22 | The Boc Group, Inc. | Method and apparatus for reactive sputtering employing two control loops |
DE19834733C1 (de) * | 1998-07-31 | 2000-04-27 | Fraunhofer Ges Forschung | Vorrichtung und Verfahren zur Beschichtung und/oder Oberflächenmodifizierung von Gegenständen im Vakuum mittels eines Plasmas |
USH1924H (en) * | 1998-09-15 | 2000-12-05 | The United States Of America As Represented By The Secretary Of The Air Force | Load-adaptive nanocrystalline carbon/amorphous diamond-like carbon composite and preparation method |
GB2346155B (en) * | 1999-01-06 | 2003-06-25 | Trikon Holdings Ltd | Sputtering apparatus |
US6572738B1 (en) | 1999-05-25 | 2003-06-03 | Unaxis Balzers Aktiengesellschaft | Vacuum treatment system and process for manufacturing workpieces |
DE19956733A1 (de) * | 1999-11-25 | 2001-06-28 | Fraunhofer Ges Forschung | Verfahren zur Regelung von Sputterprozessen |
US6510263B1 (en) | 2000-01-27 | 2003-01-21 | Unaxis Balzers Aktiengesellschaft | Waveguide plate and process for its production and microtitre plate |
EP1268872B2 (de) * | 2000-03-27 | 2010-01-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur regelung von reaktiven sputterprozessen |
WO2002009241A2 (en) * | 2000-07-20 | 2002-01-31 | Tokyo Electron Limited | Electrode for plasma processing system |
DE10119834A1 (de) * | 2001-04-23 | 2002-11-14 | Fraunhofer Ges Forschung | Verfahren zur Stabilisierung von Sputterprozessen |
DE10154229B4 (de) * | 2001-11-07 | 2004-08-05 | Applied Films Gmbh & Co. Kg | Einrichtung für die Regelung einer Plasmaimpedanz |
JP3866615B2 (ja) * | 2002-05-29 | 2007-01-10 | 株式会社神戸製鋼所 | 反応性スパッタリング方法及び装置 |
EP1541707B1 (en) * | 2002-08-09 | 2012-10-17 | Kabushiki Kaisha Kobe Seiko Sho | METHOD FOR PREPARING ALUMNA COATING FILM HAVING a-TYPE CRYSTAL STRUCTURE AS PRIMARY STRUCTURE |
US20060150903A1 (en) * | 2002-10-15 | 2006-07-13 | Othmar Zuger | Method and apparatus for processing substrates |
JP3953444B2 (ja) * | 2002-10-16 | 2007-08-08 | 株式会社アルバック | 薄膜形成装置及び薄膜形成方法 |
US6988463B2 (en) * | 2002-10-18 | 2006-01-24 | Guardian Industries Corp. | Ion beam source with gas introduced directly into deposition/vacuum chamber |
US20040129223A1 (en) * | 2002-12-24 | 2004-07-08 | Park Jong Hyurk | Apparatus and method for manufacturing silicon nanodot film for light emission |
DE10311466B4 (de) * | 2003-03-15 | 2005-07-21 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum reaktiven Magnetron-Sputtern |
US7232506B2 (en) * | 2003-10-08 | 2007-06-19 | Deposition Sciences, Inc. | System and method for feedforward control in thin film coating processes |
US20050103620A1 (en) * | 2003-11-19 | 2005-05-19 | Zond, Inc. | Plasma source with segmented magnetron cathode |
US9771648B2 (en) * | 2004-08-13 | 2017-09-26 | Zond, Inc. | Method of ionized physical vapor deposition sputter coating high aspect-ratio structures |
WO2005071134A1 (en) * | 2004-01-15 | 2005-08-04 | Deposition Sciences, Inc. | Method and apparatus for monitoring optical characteristics of thin films in a deposition process |
US7718042B2 (en) * | 2004-03-12 | 2010-05-18 | Oc Oerlikon Balzers Ag | Method for manufacturing sputter-coated substrates, magnetron source and sputtering chamber with such source |
JP2005270850A (ja) * | 2004-03-25 | 2005-10-06 | Canon Inc | プラズマ処理方法および装置 |
DE102004014855A1 (de) * | 2004-03-26 | 2004-10-21 | Applied Films Gmbh & Co. Kg | Einrichtung zum reaktiven Sputtern |
US8500965B2 (en) * | 2004-05-06 | 2013-08-06 | Ppg Industries Ohio, Inc. | MSVD coating process |
EP1803142A1 (en) * | 2004-09-24 | 2007-07-04 | Zond, Inc. | Apparatus for generating high-current electrical discharges |
ATE543198T1 (de) * | 2004-12-24 | 2012-02-15 | Huettinger Elektronik Gmbh | Plasmaanregungssystem |
US20070045111A1 (en) * | 2004-12-24 | 2007-03-01 | Alfred Trusch | Plasma excitation system |
DE102005015587B4 (de) * | 2005-04-05 | 2009-12-24 | Von Ardenne Anlagentechnik Gmbh | Verfahren und Anordnung zur Stabilisierung eines Arbeitspunktes von reaktiven, plasmagestützten Vakuumbeschichtungsprozessen |
TWI349042B (en) * | 2006-02-09 | 2011-09-21 | Sputtering system providing large area sputtering and plasma-assisted reactive gas dissociation | |
US7853364B2 (en) * | 2006-11-30 | 2010-12-14 | Veeco Instruments, Inc. | Adaptive controller for ion source |
WO2009121685A1 (en) * | 2008-04-04 | 2009-10-08 | Applied Materials Inc., A Corporation Of The State Of Delaware | Method for depositing of barrier layers on a plastic substrate as well as coating device therefor and a layer system |
US20100089748A1 (en) * | 2008-10-15 | 2010-04-15 | C Forster John | Control of erosion profile on a dielectric rf sputter target |
JP2012525492A (ja) * | 2009-04-27 | 2012-10-22 | オー・ツェー・エリコン・バルザース・アクチェンゲゼルシャフト | 複数スパッタ源を有する反応性スパッタリング |
DE102009061065A1 (de) * | 2009-06-26 | 2011-09-29 | Von Ardenne Anlagentechnik Gmbh | Verfahren zur Beschichtung eines Subtrates in einer Vakuumkammer mit einem rotierenden Magnetron |
TWI464284B (zh) * | 2010-04-22 | 2014-12-11 | Hon Hai Prec Ind Co Ltd | 濺鍍裝置及濺鍍方法 |
US8907578B2 (en) * | 2011-09-16 | 2014-12-09 | Busek Co., Inc. | Autonomous method and system for minimizing the magnitude of plasma discharge current oscillations in a hall effect plasma device |
DE102012110043B4 (de) * | 2012-06-22 | 2016-06-23 | Von Ardenne Gmbh | Verfahren zur Einstellung des Arbeitspunktes beim reaktiven Sputtern |
DE102012110264A1 (de) * | 2012-10-26 | 2014-04-30 | Von Ardenne Anlagentechnik Gmbh | Anordnung zur Gasführung an Magnetrons in Vakuumbeschichtungsanlagen |
EP2770083B1 (en) * | 2013-02-20 | 2015-11-18 | University of West Bohemia in Pilsen | High-rate reactive sputtering of dielectric stoichiometric films |
WO2014196352A1 (ja) * | 2013-06-04 | 2014-12-11 | 株式会社村田製作所 | 薄膜形成方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4420385A (en) * | 1983-04-15 | 1983-12-13 | Gryphon Products | Apparatus and process for sputter deposition of reacted thin films |
DE3417732A1 (de) * | 1984-05-12 | 1986-07-10 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren zum aufbringen von siliziumhaltigen schichten auf substraten durch katodenzerstaeubung und zerstaeubungskatode zur durchfuehrung des verfahrens |
JPS63111173A (ja) * | 1986-10-30 | 1988-05-16 | Anelva Corp | スパツタリング装置 |
US4851095A (en) * | 1988-02-08 | 1989-07-25 | Optical Coating Laboratory, Inc. | Magnetron sputtering apparatus and process |
DE3821207A1 (de) * | 1988-06-23 | 1989-12-28 | Leybold Ag | Anordnung zum beschichten eines substrats mit dielektrika |
DE3929695C2 (de) * | 1989-09-07 | 1996-12-19 | Leybold Ag | Vorrichtung zum Beschichten eines Substrats |
US5154810A (en) * | 1991-01-29 | 1992-10-13 | Optical Coating Laboratory, Inc. | Thin film coating and method |
-
1992
- 1992-04-07 ES ES92105963T patent/ES2093133T3/es not_active Expired - Lifetime
- 1992-04-07 EP EP92105963A patent/EP0508359B1/de not_active Expired - Lifetime
- 1992-04-07 AT AT92105963T patent/ATE144004T1/de not_active IP Right Cessation
- 1992-04-07 DE DE59207306T patent/DE59207306D1/de not_active Expired - Lifetime
- 1992-04-08 US US07/865,116 patent/US5292417A/en not_active Expired - Lifetime
- 1992-04-13 JP JP09250392A patent/JP3417575B2/ja not_active Expired - Fee Related
-
1993
- 1993-12-10 US US08/164,908 patent/US5423970A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5423970A (en) | 1995-06-13 |
US5292417A (en) | 1994-03-08 |
DE59207306D1 (de) | 1996-11-14 |
JP3417575B2 (ja) | 2003-06-16 |
EP0508359A1 (de) | 1992-10-14 |
EP0508359B1 (de) | 1996-10-09 |
ATE144004T1 (de) | 1996-10-15 |
JPH06128742A (ja) | 1994-05-10 |
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